Silicon Carbide Schottky Diode
IDW15G120C5B
5th Generation CoolSiC™ 1200 V SiC Schottky Diode
Final Da ta sheet
Rev. 2.2 2021-03-01
Indust rial Po wer C o ntrol
IDW15G120C5B
5th Generation CoolSiC™ 1200 V SiC Schottky Diode
CoolSiCTM SiC Schottky Diode
1
Features:
CASE
2
3
Revolutionary semiconductor material - Silicon Carbide
No reverse recovery current / No forward recovery
Temperature independent switching behavior
Low forward voltage even at high operating temperature
Tight forward voltage distribution
Excellent thermal performance
Extended surge current capability
Specified dv/dt ruggedness
Qualified according to JEDEC1) for target applications
Pb-free lead plating; RoHS compliant
Benefits
System efficiency improvement over Si diodes
Enabling higher frequency / increased power density solutions
System size/cost savings due to reduced heatsink requirements and smaller magnetics
Reduced EMI
Highest efficiency across the entire load range
Robust diode operation during surge events
High reliability
RelatedLinks: www.infineon.com/sic
Applications
Solar inverters
Uninterruptable power supplies
Motor drives
Power Factor Correction
Package pin definitions
Pin 1 – anode 1
Pin 2 and backside – cathode
Pin 3 – anode 2
Key Performance and Package Parameters (leg/device)
Type
IDW15G120C5B
VDC
IF
QC
Tj,max
Marking
Package
1200V
7.5 / 15 A
41 / 82 nC
175°C
D1512B5
PG-TO247-3
1) J-STD20 and JESD22
Final Data Sheet
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Rev. 2.2, 2021-03-01
IDW15G120C5B
5th Generation CoolSiC™ 1200 V SiC Schottky Diode
Table of Contents
Description…. ............................................................................................................................................. 2
Table of Contents ........................................................................................................................................ 3
Maximum ratings ......................................................................................................................................... 4
Thermal Resistances .................................................................................................................................. 4
Electrical Characteristics............................................................................................................................. 5
Electrical Characteristics diagram .............................................................................................................. 6
Package Drawings ...................................................................................................................................... 9
Revision History ........................................................................................................................................ 10
Disclaimer…. ............................................................................................................................................. 11
Final Data Sheet
3
Rev. 2.2, 2021-03-01
IDW15G120C5B
5th Generation CoolSiC™ 1200 V SiC Schottky Diode
Maximum ratings
Parameter
Symbol
Repetitive peak reverse voltage
VRRM
Continuous forward current for Rth(j-c,max)
TC = 154°C, D=1
TC = 135°C, D=1
TC = 25°C, D=1
Surge non-repetitive forward current, sine halfwave
TC=25°C, tp=10ms
TC=150°C, tp=10ms
Non-repetitive peak forward current
TC = 25°C, tp=10 µs
i²t value
TC = 25°C, tp=10 ms
TC = 150°C, tp=10 ms
Diode dv/dt ruggedness
VR=0...960 V
Power dissipation for Rth(j-c,max)
TC = 25°C
Operating and storage temperature
Soldering temperature,
wavesoldering only allowed at leads
1.6mm (0.063 in.) from case for 10 s
Mounting torque
M3 and M4 screws
Value (leg/device)
Unit
1200
V
7.5 / 15
11 / 23
24 / 49
IF
A
IF,SM
85 / 170
80 / 160
A
IF,max
711 / 1422
A
∫ i²dt
36 / 143
32 / 128
A²s
dv/dt
150
V/ns
Ptot
100 / 200
W
Tj;Tstg
-55…175
°C
Tsold
260
°C
M
0.7
Nm
Thermal Resistances
Parameter
Value (leg/device)
Symbol Conditions
min.
typ.
max.
Unit
Characteristic
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Final Data Sheet
Rth(j-c)
Rth(j-a)
leaded
-
4
1.1/0.6
-
1.5/0.8
K/W
62
K/W
Rev. 2.2, 2021-03-01
IDW15G120C5B
5th Generation CoolSiC™ 1200 V SiC Schottky Diode
Electrical Characteristics
Static Characteristic, at Tj=25°C, unless otherwise specified
Parameter
Symbol Conditions
DC blocking voltage
VDC
Diode forward voltage
VF
Reverse current
IR
Value (leg/device)
Tj = 25°C
IF= 7.5/15 A, Tj=25°C
IF= 7.5/15 A, Tj=150°C
VR=1200V, Tj=25°C
VR=1200V, Tj=150°C
min.
typ.
max.
1200
-
1.4
1.7
4/8
22 / 44
1.65
2.30
62 / 124
320 / 640
Unit
V
V
µA
Dynamic Characteristics, at Tj=25°C, unless otherwise specified
Parameter
Value (leg/device)
Symbol Conditions
Unit
min.
typ.
max.
-
41 / 82
-
nC
-
525 /1050
37 / 74
29 / 59
-
pF
VR = 800V, Tj=150°C & 25°C
Total capacitive charge
QC
VR
QC C (V )dV
0
Total Capacitance
Final Data Sheet
C
VR=1 V, f=1 MHz
VR=400 V, f=1 MHz
VR=800 V, f=1 MHz
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Rev. 2.2, 2021-03-01
IDW15G120C5B
5th Generation CoolSiC™ 1200 V SiC Schottky Diode
Electrical Characteristics diagrams
90
120
Per leg
Per leg
80
D= 0.10
D= 0.30
100
D= 0.50
70
D= 0.70
60
IF [A]
P [W]
80
60
D= 1.00
50
40
30
40
20
20
10
0
0
25
50
75
25
100 125 150 175
50
75
Tc [°C]
Figure 1. Power dissipation per leg as function
of case temperature, Ptot=f(TC),
Rth(j-c),max
Per leg
14
150
175
Figure 2. Diode forward current per leg as function
of temperature, parameter: Tj≤175°C, Rth(j-c),max,
D=duty cycle, Vth, Rdiff @ Tj=175°C
Per leg
70
-55 C
12
-55 C
60
25 C
25 C
10
50
8
IF [A]
100 C
IF [A]
100 125
Tc [°C]
150 C
6
100 C
40
30
175 C
4
20
150 C
2
10
0
175 C
0
0
0.5
1
1.5
VF [V]
2
2.5
0
Figure 3. Typical forward characteristics per leg,
IF=f(VF), tp= 10 µs, parameter: Tj
Final Data Sheet
1
2
3
VF [V]
4
5
6
Figure 4. Typical forward characteristics in surge
current per leg, IF=f(VF), tp= 10 µs,
parameter: Tj
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Rev. 2.2, 2021-03-01
IDW15G120C5B
5th Generation CoolSiC™ 1200 V SiC Schottky Diode
1.E-04
45
Per leg
40
1.E-05
35
Per leg
30
1.E-06
IR [A]
QC [nC]
25
20
1.E-07
175 C
15
150 C
1.E-08
10
100 C
5
1.E-09
200
0
100
400
700
dIF/dt [A/µs]
1000
Figure 5. Typical capacitive charge per leg as
function of current slope1, QC=f(dIF/dt), Tj=150°C
400
-55 C
25 C
600
800
VR [V]
1000
1200
Figure 6. Typical reverse characteristics per leg,
IR=f(VR), parameter: Tj
1) guaranteed by design.
700
500
1
400
C [pF]
Zthjc [K/W]
600
D= 0.50
300
D= 0.20
0.1
200
D= 0.10
D= 0.05
D= 0.02
100
D= 0.01
Single Pulse
0.01
1E-6
0
1E-3
tp [s]
0
1E0
10
100
1000
VR [V]
Figure 7. Max. transient thermal impedance per leg,
Zth,j-c=f(tP), parameter: D=tP/T
Final Data Sheet
1
Figure 8. Typical capacitance per leg as function of
reverse voltage, C=f(VR); Tj=25°C; f=1 MHz
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Rev. 2.2, 2021-03-01
IDW15G120C5B
5th Generation CoolSiC™ 1200 V SiC Schottky Diode
25
20
EC [µJ]
15
10
5
0
0
200
400
600 800
VR [V]
1000 1200
Figure 9. Typical capacitively stored energy as
function of reverse voltage, per leg, EC=f(VR)
Final Data Sheet
8
Rev. 2.2, 2021-03-01
IDW15G120C5B
5th Generation CoolSiC™ 1200 V SiC Schottky Diode
Package Drawings
Final Data Sheet
9
Rev. 2.2, 2021-03-01
IDW15G120C5B
5th Generation CoolSiC™ 1200 V SiC Schottky Diode
Revision History
IIDW15G120C5B
Revision: 2021-03-01, Rev. 2.2
Previous Revision:
Revision
Date
Subjects (major changes since last version)
2.0
2014-06-21 Final data sheet
2.1
2017-07-21 Editorial Changes
2.2
2021-03-01 Increased dv/dt ruggedness
Disclaimer
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to: erratum@infineon.com
Final Data Sheet
10
Rev. 2.2, 2021-03-01
IDW15G120C5B
5th Generation CoolSiC™ 1200 V SiC Schottky Diode
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2021.
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated
herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims
any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of
intellectual property rights of any third party.
In addition, any information given in this document is subject to customer’s compliance with its obligations
stated in this document and any applicable legal requirements, norms and standards concerning customer’s
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The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your
nearest Infineon Technologies office (www.infineon.com).
Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the
Automotive Electronics Council.
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
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personal injury.
Final Data Sheet
11
Rev. 2.2, 2021-03-01
