IDW40E65D1

Diode RapidSwitchingEmitterControlledDiode IDW40E65D1 EmitterControlledDiodeRapid1Series Datasheet IndustrialPowerControl IDW40E65D1 EmitterControlledDiodeRapid1Series RapidSwitchingEmitterControlledDiode  Features: A •650VEmitterControlledtechnology •Temperaturestablebehaviourofkeyparameters •Lowforwardvoltage(VF) •Ultrafastrecovery •Lowreverserecoverycharge(Qrr) •Lowreverserecoverycurrent(Irrm) •Softnessfactor>1 •175°Cjunctionoperatingtemperature •Pb-freeleadplating;RoHScompliant C Applications: •AC/DCconverters •BoostdiodeinPFCstages •Freewheelingdiodesininvertersandmotordrives •Generalpurposeinverters •Switchmodepowersupplies Packagepindefinition: 1 2 3 •Pin1-notconnected •Pin2andbackside-cathode •Pin3-anode KeyPerformanceandPackageParameters Type IDW40E65D1 Vrrm If Vf,Tvj=25°C Tvjmax Marking Package 650V 40A 1.35V 175°C E40ED1 PG-TO247-3 2 Rev.2.2,2013-12-16 IDW40E65D1 EmitterControlledDiodeRapid1Series TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 3 Rev.2.2,2013-12-16 IDW40E65D1 EmitterControlledDiodeRapid1Series MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Repetitive peak reverse voltage VRRM 650 V Diodeforwardcurrent,limitedbyTvjmax TC=25°C TC=100°C IF 80.0 40.0 A Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 120.0 A Diode surge non repetitive forward current TC=25°C,tp=10.0ms,sinehalfwave IFSM PowerdissipationTC=25°C Ptot 179.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C A 320.0 Soldering temperature, wave soldering 1.6 mm (0.063 in.) from case for 10s °C 260 Mounting torque, M3 screw Maximum of mounting processes: 3 M 0.6 Nm ThermalResistance Parameter Characteristic Symbol Conditions Max.Value Unit Diode thermal resistance,1) junction - case Rth(j-c) 0.84 K/W Thermal resistance junction - ambient Rth(j-a) 40 K/W ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value min. typ. max. - 1.35 1.32 1.28 1.70 - - - Unit StaticCharacteristic Diode forward voltage VF IF=40.0A Tvj=25°C Tvj=125°C Tvj=175°C Reverse leakage current IR VR=650V Tvj=25°C Tvj=175°C V 40.0 µA 4000.0 ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value min. typ. max. - 13.0 - Unit DynamicCharacteristic Internal emitter inductance measured 5mm (0.197 in.) from case 1) LE nH Please be aware that in non standard load conditions, due to high Rth(j-c), Tvj close to Tvjmax can be reached. 4 Rev.2.2,2013-12-16 IDW40E65D1 EmitterControlledDiodeRapid1Series SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 77 - ns - 0.87 - µC - 17.5 - A - -1520 - A/µs - 129 - ns - 0.49 - µC - 6.9 - A - -300 - A/µs DiodeCharacteristic,atTvj=25°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Tvj=25°C, VR=400V, IF=40.0A, diF/dt=1000A/µs Tvj=25°C, VR=400V, IF=40.0A, diF/dt=200A/µs dirr/dt SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 110 - ns - 2.36 - µC - 27.3 - A - -1320 - A/µs - 163 - ns - 1.04 - µC - 10.4 - A - -600 - A/µs DiodeCharacteristic,atTvj=175°C/125°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Tvj=175°C, VR=400V, IF=40.0A, diF/dt=1000A/µs Tvj=125°C, VR=400V, IF=40.0A, diF/dt=200A/µs dirr/dt 5 Rev.2.2,2013-12-16 IDW40E65D1 EmitterControlledDiodeRapid1Series 180 80 160 70 IF,FORWARDCURRENT[A] Ptot,POWERDISSIPATION[W] 140 120 100 80 60 40 50 40 30 20 10 20 0 60 25 50 75 100 125 150 0 175 25 TC,CASETEMPERATURE[°C] 100 125 150 175 Figure 2. Diodeforwardcurrentasafunctionofcase temperature (Tvj≤175°C) 1 200 Tj=25°C, IF = 40A Tj=125°C, IF = 40A Tj=175°C, IF = 40A 180 trr,REVERSERECOVERYTIME[ns] D=0.5 0.2 0.1 0.05 0.02 0.01 single pulse 0.1 1E-5 1E-4 0.001 0.01 0.1 160 140 120 100 80 60 40 20 i: 1 2 3 4 5 6 ri[K/W]: 0.015899 0.19942 0.23881 0.34593 0.036218 2.8E-3 τi[s]: 1.9E-5 2.4E-4 1.9E-3 0.01162857 0.0912415 1.815212 0.01 1E-6 75 TC,CASETEMPERATURE[°C] Figure 1. Powerdissipationasafunctionofcase temperature (Tvj≤175°C) Zth(j-c),TRANSIENTTHERMALRESISTANCE[K/W] 50 0 200 1 tp,PULSEWIDTH[s] 600 1000 1400 1800 2200 2600 3000 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 3. Diodetransientthermalimpedanceasa functionofpulsewidth (D=tp/T) Figure 4. Typicalreverserecoverytimeasafunctionof diodecurrentslope (VR=400V) 6 Rev.2.2,2013-12-16 IDW40E65D1 EmitterControlledDiodeRapid1Series 3.0 45 40 2.5 Irrm,REVERSERECOVERYCURRENT[A] Qrr,REVERSERECOVERYCHARGE[µC] Tj=25°C, IF = 40A Tj=125°C, IF = 40A Tj=175°C, IF = 40A 2.0 1.5 1.0 0.5 Tj=25°C, IF = 40A Tj=125°C, IF = 40A Tj=175°C, IF = 40A 35 30 25 20 15 10 5 0.0 200 600 1000 1400 1800 2200 2600 0 200 3000 diF/dt,DIODECURRENTSLOPE[A/µs] 600 1000 1400 1800 2200 2600 3000 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 5. Typicalreverserecoverychargeasafunction Figure 6. Typicalpeakreverserecoverycurrentasa ofdiodecurrentslope functionofdiodecurrentslope (VR=400V) (VR=400V) 0 Tj=25°C Tj=175°C 70 -500 IF,FORWARDCURRENT[A] dIrr/dt,diodepeakrateoffallofIrr[A/µs] -250 80 Tj=25°C, IF = 40A Tj=125°C, IF = 40A Tj=175°C, IF = 40A -750 -1000 -1250 -1500 -1750 60 50 40 30 20 -2000 10 -2250 -2500 200 600 1000 1400 1800 2200 2600 0 0.00 3000 diF/dt,DIODECURRENTSLOPE[A/µs] 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 VF,FORWARDVOLTAGE[V] Figure 7. Typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope (VR=400V) Figure 8. Typicaldiodeforwardcurrentasafunctionof forwardvoltage 7 Rev.2.2,2013-12-16 IDW40E65D1 EmitterControlledDiodeRapid1Series 2.00 IF=10A IF=20A IF=40A IF=60A IF=80A VF,FORWARDVOLTAGE[V] 1.75 1.50 1.25 1.00 0.75 0.50 0 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 9. Typicaldiodeforwardvoltageasafunctionof junctiontemperature 8 Rev.2.2,2013-12-16 IDW40E65D1 EmitterControlledDiodeRapid1Series PG-TO247-3 9 Rev.2.2,2013-12-16 IDW40E65D1 EmitterControlledDiodeRapid1Series vGE(t) 90% VGE a a 10% VGE b b t iC(t) 90% IC 90% IC 10% IC 10% IC t vCE(t) t td(off) tf td(on) t tr vGE(t) 90% VGE 10% VGE t iC(t) CC 2% IC t vCE(t) t2 E = off ∫V t CE t4 x IC x d t E 1 t1 on = ∫V t CE x IC x d t 2% VCE 3 t2 t3 t4 10 t Rev.2.2,2013-12-16 IDW40E65D1 Emitter Controlled Diode Rapid 1 Series Revision History IDW40E65D1 Revision: 2013-12-16, Rev. 2.2 Previous Revision Revision Date Subjects (major changes since last revision) 1.1 2013-03-13 Preliminary data sheet 2.1 2013-10-21 Final data sheet 2.2 2013-12-16 New Marking Pattern We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all ? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Published by Infineon Technologies AG 81726 Munich, Germany 81726 München, Germany © 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 11 Rev. 2.2, 2013-12-16