IDW40G65C5BXKSA2

SiC Silicon Carbide Diode 5 t h Ge ner ation thin Q! T M 650V SiC Schottky Diode IDW40G65C5B Final Da ta sheet Rev. 2.0, 2015-04-13 Po wer Ma nage m ent & M ulti m ark et 5th Generation thinQ!™ SiC Schottky Diode 1 IDW40G65C5B Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. A combination with a new, more compact design and thinwafer technology results is a new family of products showing improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc x Vf). The new thinQ!™ Generation 5 has been designed to complement our 650V CoolMOS™ families: this ensures meeting the most stringent application requirements in this voltage range. 1 2 3 Features          Revolutionary semiconductor material - Silicon Carbide Benchmark switching behavior No reverse recovery/ No forward recovery Temperature independent switching behavior High surge current capability Pb-free lead plating; RoHS compliant 1) Qualified according to JEDEC for target applications 2) 3) Breakdown voltage tested at 44 mA Optimized for high temperature operation Benefits      System efficiency improvement over Si diodes System cost / size savings due to reduced cooling requirements Enabling higher frequency / increased power density solutions Higher system reliability due to lower operating temperatures Reduced EMI Applications     Switch mode power supply Power factor correction Solar inverter Uninterruptible power supply Table 1 Key Performance Parameters Parameter Value Unit VDC 650 V QC; VR=400V 2 x 29 nC EC; VR=400V 2 x 6.6 µJ IF @ TC < 120°C 2 x 20 A Table 2 Pin 1 A 4) Pin Definition Pin 2 Pin 3 C A Type / ordering Code IDW40G65C5B Package PG-TO247-3 Marking D4065B5 1) J-STD20 and JESD22 2) All devices tested under avalanche conditions for a time periode of 10ms 3) Per Leg 4) Per Device Final Datasheet 2 Related links www.infineon.com/sic Rev. 2.0, 2015-04-13 5th Generation thinQ!TM SiC Schottky Diode IDW40G65C5B Table of contents Table of Contents 1 Description .......................................................................................................................................... 2 2 Maximum ratings ................................................................................................................................ 4 3 Thermal characteristics ..................................................................................................................... 4 4 Electrical characteristics ................................................................................................................... 5 5 Electrical characteristics diagrams .................................................................................................. 6 6 Simplified Forward Characteristics Model ...................................................................................... 8 7 Package outlines ................................................................................................................................ 9 8 Revision History ............................................................................................................................... 10 Final Datasheet 3 Rev. 2.0, 2015-04-13 5th Generation thinQ!TM SiC Schottky Diode IDW40G65C5B Maximum ratings 2 Maximum ratings Table 3 Parameter Maximum ratings Symbol Continuous forward current 1) Typ. – – Max. 20 – – 103 – – 87 IF,max – – 776 ∫ i²dt – – 53 Surge non-repetitive forward current, sine IF,SM 1) halfwave Non-repetitive peak forward current i²t value 1) Unit Min. IF 1) Values Note/Test Condition TC < 120°C, D=1 A TC = 25°C, tp=10 ms TC = 150°C, tp=10 ms TC = 25°C, tp=10 µs A²s TC = 25°C, tp=10 ms – – 38 Repetitive peak reverse voltage VRRM – – V Tj = 25°C Diode dv/dt ruggedness dv/dt – – 650 100 V/ns VR=0..480 V Ptot – – 112 W TC = 25°C -55 – 175 °C – – 60 Ncm Power dissipation 1) Tj;Tstg Operating and storage temperature Mounting torque 3 TC = 150°C, tp=10 ms M3 screws Thermal characteristics Table 4 Parameter Thermal characteristics TO-247-3 Symbol Values Min. Thermal resistance, junction-case 1) Thermal resistance, junction-ambient RthJC 1) Soldering temperature, wavesoldering only allowed at leads 1) Per Leg 2) Per Device Final Datasheet RthJA Tsold Unit – Typ. 1.0 Max. 1.3 – – 62 – – 260 4 Note/Test Condition K/W leaded °C 1.6mm (0.063 in.) from case for 10 s Rev. 2.0, 2015-04-13 5th Generation thinQ!TM SiC Schottky Diode IDW40G65C5B Electrical characteristics 4 Electrical characteristics Table 5 Parameter Static characteristics Symbol DC blocking voltage Diode forward voltage Reverse current Table 6 Parameter 1) Per Leg Per Device Final Datasheet Note/Test Condition VDC Typ. – Max. – VF – 1.5 1.7 – 1.8 2.1 IF= 20 A, Tj=150°C – 1.1 210 VR=650 V, Tj=25°C – 0.3 75 – 4.1 1450 Tj=25°C V µA IF= 20 A, Tj=25°C VR=600 V, Tj=25°C VR=650 V, Tj=150°C AC characteristics Total Capacitance 2) Unit Min. 650 IR Symbol Total capacitive charge 1) Values 1) 1) Values Unit Min. Typ. Qc – 29 C – 590 – – 76 – – 74 – 5 Note/Test Condition Max. nC VR=400 V, di/dt=200A/µs, IF≤IF,MAX, Tj=150°C VR=1 V, f=1 MHz pF VR=300 V, f=1 MHz VR=600 V, f=1 MHz Rev. 2.0, 2015-04-13 5th Generation thinQ!TM SiC Schottky Diode IDW40G65C5B Electrical characteristics diagrams 5 Electrical characteristics diagrams Table 7 Power dissipation 1) Maximal diode forward current 1) 160 120 0.1 0.3 140 0.5 100 120 0.7 1 100 IF[A] Ptot[W] 80 60 80 60 40 40 20 20 0 0 25 50 75 100 125 150 25 175 50 75 100 125 150 175 TC[°C] TC[°C] IF=f(TC); RthJC,max;Tj≤175°C; parameter D=duty cycle Ptot=f(TC); RthJC,max Table 8 Typical forward characteristics 1) Typical forward characteristics in surge current 40 1) 200 180 35 -55°C 30 160 25°C 140 -55°C 120 100°C IF [A] IF [A] 25 100 20 25°C 80 15 100°C 150°C 60 175°C 10 40 5 20 0 0 150°C 175°C 0 1 2 0 3 VF [V] IF=f(VF); tp=200 µs; parameter: Tj 1) Per Leg 2) Per Device Final Datasheet 1 2 3 VF [V] 4 5 6 IF=f(VF); tp=200 µs; parameter: Tj 6 Rev. 2.0, 2015-04-13 5th Generation thinQ!TM SiC Schottky Diode IDW40G65C5B Electrical characteristics diagrams Table 9 Typ. capacitance charge vs. current slope 1) Typ. Reverse current vs. reverse voltage 1) 1.E-4 30 25 1.E-5 20 IR [A] QC[nC] 1.E-6 15 175°C 1.E-7 10 150°C 1.E-8 100°C 5 25°C 0 100 300 500 700 1.E-9 100 900 200 300 400 -55°C 500 600 VR [V] dIF/dt [A/µs] QC=f(diF/dt); Tj=150°C; VR=400 V; IF≤IF,max IR=f(VR); parameter: Tj Table 10 Max. transient thermal impedance 1) Typ. capacitance vs. reverse voltage 1) 800 700 1 500 0.5 0.2 C [pF] Zth,jc [K/W] 600 0.1 0.1 0.05 400 300 0.02 200 0.01 single pulse 100 0.01 1.E-06 0 1.E-03 1.E+00 0 Zth,jc=f(tP); parameter: D=tP/T Per Leg 2) Per Device Final Datasheet 10 100 1000 VR [V] tp [s] 1) 1 C=f(VR); Tj=25°C; f=1 MHz 7 Rev. 2.0, 2015-04-13 5th Generation thinQ!TM SiC Schottky Diode IDW40G65C5B Electrical characteristics diagrams Table 11 Typ. capacitance stored energy 1) 18 16 14 12 EC [µJ] 10 8 6 4 2 0 0 200 400 600 VR [V] EC=f(VR) 6 Simplified Forward Characteristics Model Table 12 Equivalent forward current curve 1) Mathematical Equation VF  VTH  RDIFF  I F VTH T j   0.001  T j  1.04 V RDIFF T j   6.4  10-7  T j  6.4  10-5  T j  0.023  IF [A] 2 1/Rdiff Vth VF [V] VF=f(IF) 1) Per Leg 2) Per Device Final Datasheet Tj in °C; -55°C < Tj < 175°C; IF < 40 A 8 Rev. 2.0, 2015-04-13 5th Generation thinQ!TM SiC Schottky Diode IDW40G65C5B 7 Package outlines Figure 1 1) Per Leg 2) Per Device Final Datasheet Outlines TO-247, dimensions in mm/inches 9 Rev. 2.0, 2015-04-13 5th Generation thinQ!TM SiC Schottky Diode IDW40G65C5B Revision History 8 Revision History th TM 5 Generation thinQ! SiC Schottky Diode Revision History: 2015-04-13, Rev. 2.0 Previous Revision: Revision Subjects (major changes since last version) 2.0 Release of the final datasheet. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Edition 2015-04-13 Published by Infineon Technologies AG 81726 Munich, Germany © 2015 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Final Datasheet 10 Rev. 2.0, 2015-04-13 w w w . i n f i n e o n . c o m Published by Infineon Technologies AG