IDW50E60FKSA1

Diode FastSwitchingEmitterControlledDiode IDW50E60 EmitterControlledDiodeseries Datasheet IndustrialPowerControl IDW50E60 EmitterControlledDiodeseries FastSwitchingEmitterControlledDiode  Features: A •QualifiedaccordingtoJEDECfortargetapplications •600VEmitterControlledtechnology •Fastrecovery •Softswitching •Lowreverserecoverycharge •Lowforwardvoltage •175°Cjunctionoperatingtemperature •Easyparalleling •Pb-freeleadplating;RoHScompliant C Applications: •SwitchingdiodeforPFCapplicationswithoperatingrangeupto 30kHz Packagepindefinition: •Pin1-notconnected •Pin2-cathode •Pin3-anode 1 2 3 KeyPerformanceandPackageParameters Type IDW50E60 Vrrm If Vf,Tvj=25°C Tvjmax Marking Package 600V 50A 1.65V 175°C D50E60 PG-TO247-3 2 Rev.2.2,2014-02-24 IDW50E60 EmitterControlledDiodeseries TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 3 Rev.2.2,2014-02-24 IDW50E60 EmitterControlledDiodeseries Maximumratings Parameter Symbol Value Unit Repetitive peak reverse voltage VRRM 600 V Diodeforwardcurrent,limitedbyTvjmax TC=25°C TC=100°C IF 80.0 50.0 A Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 150.0 A Diode surge non repetitive forward current TC=25°C,tp=10.0ms,sinehalfwave IFSM PowerdissipationTC=25°C Ptot 187.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C A 240.0 Soldering temperature, wave soldering 1.6 mm (0.063 in.) from case for 10s °C 260 Mounting torque, M3 screw Maximum of mounting processes: 3 M 0.6 Nm ThermalResistance Parameter Characteristic Symbol Conditions Max.Value Unit Diode thermal resistance, junction - case Rth(j-c) 0.80 K/W Thermal resistance junction - ambient Rth(j-a) 40 K/W ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value min. typ. max. 2.00 - Unit StaticCharacteristic Diode forward voltage VF IF=50.0A Tvj=25°C Tvj=175°C - 1.65 1.60 Reverse leakage current IR VR=600V Tvj=25°C Tvj=175°C - - V 40.0 µA 1650.0 ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value min. typ. max. Unit DynamicCharacteristic SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions 4 Value min. typ. max. Unit Rev.2.2,2014-02-24 IDW50E60 EmitterControlledDiodeseries DiodeCharacteristic,atTvj=25°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Tvj=25°C, VR=400V, IF=50.0A, diF/dt=1200A/µs dirr/dt - 115 - ns - 1.50 - µC - 30.0 - A - -470 - A/µs SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 192 - ns - 4.10 - µC - 52.0 - A - -650 - A/µs DiodeCharacteristic,atTvj=175°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Tvj=175°C, VR=400V, IF=50.0A, diF/dt=1200A/µs dirr/dt 5 Rev.2.2,2014-02-24 IDW50E60 EmitterControlledDiodeseries 200 90 180 80 70 IF,FORWARDCURRENT[A] Ptot,POWERDISSIPATION[W] 160 140 120 100 80 60 50 40 30 20 40 10 20 0 60 25 50 75 100 125 150 0 175 25 TC,CASETEMPERATURE[°C] 75 100 125 150 175 TC,CASETEMPERATURE[°C] Figure 1. Powerdissipationasafunctionofcase temperature (Tj≤175°C) Figure 2. Diodeforwardcurrentasafunctionofcase temperature (Tj≤175°C) 1 400 Tj=25°C, IF = 50A Tj=100°C, IF = 50A Tj=175°C, IF = 50A 350 trr,REVERSERECOVERYTIME[ns] ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W] 50 0.1 D=0.5 0.2 0.1 0.05 0.02 0.01 single pulse 0.01 300 250 200 150 100 50 i: 1 2 3 4 5 ri[K/W]: 0.07228401 0.1019218 0.1401017 0.2213981 0.2642944 τi[s]: 9.4E-6 1.3E-4 1.5E-3 0.02221235 0.3064102 0.001 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 0 200 1 tp,PULSEWIDTH[s] 400 600 800 1000 1200 1400 1600 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 3. Diodetransientthermalimpedanceasa functionofpulsewidth (D=tp/T) Figure 4. Typicalreverserecoverytimeasafunctionof diodecurrentslope (VR=400V,IF=50A,Dynamictestcircuitin Figure E) 6 Rev.2.2,2014-02-24 IDW50E60 EmitterControlledDiodeseries 5.0 Tj=25°C, IF = 50A Tj=100°C, IF = 50A Tj=175°C, IF = 50A Irr,REVERSERECOVERYCURRENT[A] Qrr,REVERSERECOVERYCHARGE[µC] 4.5 60 Tj=25°C, IF = 50A Tj=100°C, IF = 50A Tj=175°C, IF = 50A 4.0 3.5 3.0 2.5 2.0 1.5 1.0 50 40 30 20 10 0.5 0.0 200 400 600 800 1000 1200 1400 0 200 1600 diF/dt,DIODECURRENTSLOPE[A/µs] 400 600 800 1000 1200 1400 1600 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 5. Typicalreverserecoverychargeasafunction Figure 6. Typicalreverserecoverycurrentasa ofdiodecurrentslope functionofdiodecurrentslope (VR=400V,IF=50A,Dynamictestcircuitin (VR=400V,IF=50A,Dynamictestcircuitin Figure E) Figure E) 0 200 Tj=25°C, IF = 50A Tj=100°C, IF = 50A Tj=175°C, IF = 50A 160 -200 IF,FORWARDCURRENT[A] dIrr/dt,diodepeakrateoffallofIrr[A/µs] -100 -300 -400 -500 -600 -700 140 120 100 80 60 40 -800 -900 200 Tj=25°C Tj=175°C 180 20 400 600 800 1000 1200 1400 0 1600 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 7. Typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope (VR=400V,IF=50A,Dynamictestcircuitin Figure E) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VF,FORWARDVOLTAGE[V] Figure 8. Typicaldiodeforwardcurrentasafunctionof forwardvoltage 7 Rev.2.2,2014-02-24 IDW50E60 EmitterControlledDiodeseries 2.5 VF,FORWARDVOLTAGE[V] 2.0 1.5 1.0 IF=10A IF=25A IF=50A IF=100A 0.5 0.0 0 25 50 75 100 125 150 175 Tj,JUNCTIONTEMPERATURE[°C] Figure 9. Typicaldiodeforwardvoltageasafunctionof junctiontemperature 8 Rev.2.2,2014-02-24 IDW50E60 EmitterControlledDiodeseries PG-TO247-3 9 Rev.2.2,2014-02-24 IDW50E60 EmitterControlledDiodeseries vGE(t) 90% VGE a a b b t iC(t) 90% IC 90% IC 10% IC 10% IC t vCE(t) t td(off) tf td(on) t tr vGE(t) 90% VGE 10% VGE t iC(t) 2% IC t vCE(t) 2% VCE t1 t2 t3 t4 t 10 Rev.2.2,2014-02-24 IDW50E60 EmitterControlledDiodeseries RevisionHistory IDW50E60 Revision:2014-02-24,Rev.2.2 Previous Revision Revision Date Subjects (major changes since last revision) 1.1 2011-12-07 Preliminary data sheet 1.2 2012-02-23 Prelim data sheet switch MOS C6 50A 2.1 2013-12-09 New value IRmax limit at 175°C 2.2 2014-02-24 New value IRmax limit at 175°C WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall? Yourfeedbackwillhelpustocontinuouslyimprovethequalityofthisdocument. Pleasesendyourproposal(includingareferencetothisdocument)to:erratum@infineon.com Publishedby InfineonTechnologiesAG 81726Munich,Germany 81726München,Germany ©2014InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics. Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingthe applicationofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind, includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandprices,pleasecontactthenearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesin question,pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystems and/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineon Technologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support, automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Life supportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustain and/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybe endangered. 11 Rev.2.2,2014-02-24