IFF2400P17LE4BPSA1

TechnicalInformation IFF2400P17LE440988 Preliminarydata Generalinformation  IPMfortypicalvoltagesupto690VRMS Ratedoutputcurrent1550ARMS  Features - Integrated current, voltage and temperature measurement - Tvjop max=150°C - Real time Tvj simulation - IGBT4 technology - Smart protection - TIM and pressfit technology - Modbus interface - 100% tested IPM - ROHS compliant - Integrated chip current : 2400A - Integrated chip voltage: 1700V   Topology half bridge  Application Energy Storage, Smart Grid, Wind, Drives, Solar  Heatsink water cooled  Implemented sensors voltage, current, temperature  Driver signals IGBT +15V  Approvals UL61800-5-1  Sales - name IFF2400P17LE440988  preparedby:OW dateofpublication:2018-07-25 approvedby:ZF revision:2.3 1 TechnicalInformation IFF2400P17LE440988 Preliminarydata Characteristicvalues  IGBTcharacteristicvalue Collector-emitter voltage min. IC = 2400 A, Tvj = 25°C Vce sat IC = 2400 A, Tvj = 150°C Turn on energy loss IC = 2400 A, VDC = 900 V, LS = 17 nH, Tvj = 25°C Eon IC = 2400 A, VDC = 900 V, LS = 17 nH, Tvj = 150°C Turn off energy loss IC = 2400 A, VDC = 900 V, LS = 17 nH, Tvj = 25°C Eoff IC = 2400 A, VDC = 900 V, LS = 17 nH, Tvj = 150°C typ. max. 1.95 2.30 V 2.45 V 730 mJ 1170 mJ 460 mJ 810 mJ Thermal resistance junction to ambient for diode due diode housing per IPM switch, flow rate: 15l/min Rthja IGBT