IFS200B12N3E4B37BPSA1

IFS200B12N3E4_B37 MIPAQ™base module MIPAQ™base module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and NTC / shunt Features • Electrical features - VCES = 1200 V - IC nom = 200 A / ICRM = 400 A - Low switching losses - Low VCEsat - Tvj op = 150 °C • Mechanical features - High power and thermal cycling capability - Isolated base plate - Copper base plate - Solder contact technology - Standard housing Potential applications • Motor drives • Servo drives Product validation • Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068 Description J Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document 1.00 2021-03-31 IFS200B12N3E4_B37 MIPAQ™base module Table of contents Table of contents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 IGBT, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 3 Diode, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 NTC-Thermistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 5 Shunt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 6 Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 7 Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 8 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Datasheet 2 1.00 2021-03-31 IFS200B12N3E4_B37 MIPAQ™base module 1 Package 1 Package Table 1 Insulation coordination Parameter Symbol Note or test condition Isolation test voltage VISOL RMS, f = 50 Hz, t = 1 min Material of module baseplate Values Unit 2.5 kV Cu Internal Isolation basic insulation (class 1, IEC 61140) Al2O3 Creepage distance dCreep terminal to heatsink 10.0 mm Clearance dClear terminal to heatsink 7.5 mm Comparative tracking index CTI RTI Elec. RTI Table 2 > 200 housing Symbol Note or test condition Min. Stray inductance module Module lead resistance, terminals - chip Storage temperature LsCE RCC'+EE' M Weight G Table 3 TC=25°C, per switch Tstg Mounting torque for modul mounting 2 Values Unit - Mounting according to M5, Screw valid application note Typ. Max. 20 nH 1.8 mΩ -40 125 °C 3 6 Nm 300 g The current under continuous operation is limited to 50 A rms per connector pin. The shunt value is not a part of the Rcc‘+ee‘ resistance. IGBT, Inverter Maximum rated values Parameter Symbol Note or test condition Collector-emitter voltage VCES Continous DC collector current ICDC Tvj max = 175 °C Repetitive peak collector current ICRM tP = 1 ms Gate-emitter peak voltage VGES Datasheet °C Characteristic values Parameter Note: 140 3 Values Unit Tvj = 25 °C 1200 V TC = 90 °C 200 A 400 A ±20 V 1.00 2021-03-31 IFS200B12N3E4_B37 MIPAQ™base module 2 IGBT, Inverter Table 4 Characteristic values Parameter Symbol Note or test condition Values Min. Collector-emitter saturation voltage Gate threshold voltage Gate charge VCE sat VGEth QG IC = 200 A, VGE = 15 V Unit Typ. Max. Tvj = 25 °C 1.75 2.10 V Tvj = 125 °C 2.00 Tvj = 150 °C 2.05 6.35 V IC = 7.6 mA, VCE = VGE, Tvj = 25 °C 5.25 5.80 VGE = ±15 V, VCE = 600 V 1.65 µC Internal gate resistor RGint Tvj = 25 °C 3.5 Ω Input capacitance Cies f = 1000 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 14 nF Reverse transfer capacitance Cres f = 1000 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 0.5 nF Collector-emitter cut-off current ICES VCE = 1200 V, VGE = 0 V Gate-emitter leakage current IGES VCE = 0 V, VGE = 20 V, Tvj = 25 °C Turn-on delay time (inductive load) tdon IC = 200 A, VCE = 600 V, VGE = ±15 V, RGon = 1 Ω Rise time (inductive load) Turn-off delay time (inductive load) Fall time (inductive load) Turn-on energy loss per pulse Turn-off energy loss per pulse SC data Thermal resistance, junction to case Datasheet tr tdoff tf Eon Eoff ISC RthJC Tvj = 25 °C Tvj = 25 °C 0.140 Tvj = 125 °C 0.150 Tvj = 150 °C 0.150 Tvj = 25 °C 0.028 Tvj = 125 °C 0.034 Tvj = 150 °C 0.035 Tvj = 25 °C 0.320 Tvj = 125 °C 0.410 Tvj = 150 °C 0.440 Tvj = 25 °C 0.043 Tvj = 125 °C 0.079 Tvj = 150 °C 0.088 Tvj = 25 °C 13 Tvj = 125 °C 21 Tvj = 150 °C 23.5 IC = 200 A, VCE = 600 V, Lσ = 30 nH, VGE = ±15 V, RGoff = 1 Ω, dv/dt = 3300 V/µs (Tvj = 150 °C) Tvj = 25 °C 15.5 Tvj = 125 °C 24 Tvj = 150 °C 26.5 VGE ≤ 15 V, VCC = 800 V, VCEmax=VCES-LsCE*di/dt tP ≤ 10 µs, Tvj = 150 °C 800 IC = 200 A, VCE = 600 V, VGE = ±15 V, RGon = 1 Ω IC = 200 A, VCE = 600 V, VGE = ±15 V, RGoff = 1 Ω IC = 200 A, VCE = 600 V, VGE = ±15 V, RGoff = 1 Ω IC = 200 A, VCE = 600 V, Lσ = 30 nH, VGE = ±15 V, RGon = 1 Ω, di/dt = 5500 A/µs (Tvj = 150 °C) per IGBT 1 mA 100 nA µs µs µs µs mJ mJ A 0.160 4 K/W 1.00 2021-03-31 IFS200B12N3E4_B37 MIPAQ™base module 3 Diode, Inverter Table 4 Characteristic values (continued) Parameter Symbol Note or test condition Values Min. Thermal resistance, case to heatsink RthCH Temperature under switching conditions Tvj op 3 per IGBT, λgrease= 1 W/(m*K) Max. 0.0540 -40 K/W 150 °C Diode, Inverter Table 5 Maximum rated values Parameter Symbol Note or test condition Repetitive peak reverse voltage VRRM Continous DC forward current IF Repetitive peak forward current I2t - value Table 6 IFRM I2t Values Unit 1200 V 200 A 400 A Tvj = 125 °C 7800 A²s Tvj = 150 °C 7400 Tvj = 25 °C tP = 1 ms tP = 10 ms, VR = 0 V Characteristic values Parameter Symbol Note or test condition Values Min. Forward voltage Peak reverse recovery current Recovered charge Reverse recovery energy Thermal resistance, junction to case Datasheet Typ. Unit VF IRM Qr Erec RthJC Unit Typ. Max. Tvj = 25 °C 1.70 2.15 Tvj = 125 °C 1.65 Tvj = 150 °C 1.65 VR = 600 V, IF = 200 A, VGE = -15 V, -diF/dt = 5500 A/µs (Tvj = 150 °C) Tvj = 25 °C 195 Tvj = 125 °C 215 Tvj = 150 °C 220 VR = 600 V, IF = 200 A, VGE = -15 V, -diF/dt = 5500 A/µs (Tvj = 150 °C) Tvj = 25 °C 18 Tvj = 125 °C 33 Tvj = 150 °C 37 VR = 600 V, IF = 200 A, VGE = -15 V, -diF/dt = 5500 A/µs (Tvj = 150 °C) Tvj = 25 °C 8.85 Tvj = 125 °C 17.5 Tvj = 150 °C 20 IF = 200 A, VGE = 0 V per diode A µC mJ 0.250 5 V K/W 1.00 2021-03-31 IFS200B12N3E4_B37 MIPAQ™base module 4 NTC-Thermistor Table 6 Characteristic values (continued) Parameter Symbol Note or test condition Values Min. Thermal resistance, case to heatsink RthCH Temperature under switching conditions Tvj op 4 per diode, λgrease= 1 W/(m*K) Typ. Unit Max. 0.0720 -40 K/W 150 °C NTC-Thermistor Table 7 Characteristic values Parameter Symbol Note or test condition Values Min. Rated resistance R25 Deviation of R100 ΔR/R Power dissipation P25 TNTC = 25 °C Typ. Unit Max. 5 TNTC = 100 °C, R100 = 493 Ω -5 TNTC = 25 °C kΩ 5 % 20 mW B-value B25/50 R2 = R25 exp[B25/50(1/T2-1/(298,15 K))] 3375 K B-value B25/80 R2 = R25 exp[B25/80(1/T2-1/(298,15 K))] 3411 K B-value B25/100 R2 = R25 exp[B25/100(1/T2-1/(298,15 K))] 3433 K Values Unit Note: 5 Specification according to the valid application note. Shunt Table 8 Characteristic values Parameter Symbol Note or test condition Min. Rated resistance R20 Temperature coefficient TCR Operation temperature Tvj op Thermal resistance, junction to case RthJC per shunt Thermal resistance, case to heatsink RthCH per shunt Datasheet Typ. Max. 0.53 TRange = +20/+60 °C 0.312 6 mΩ 30 ppm/ K 200 °C 6.55 K/W K/W 1.00 2021-03-31 IFS200B12N3E4_B37 MIPAQ™base module 6 Characteristics diagrams 6 Characteristics diagrams switching losses (typical), IGBT, Inverter E = f(IC) RGoff = 1 Ω, RGon = 1 Ω, VCE = 600 V, VGE = ± 15 V switching losses (typical), IGBT, Inverter E = f(RG) IC = 200 A, VCE = 600 V, VGE = ± 15 V 90 60 80 50 70 60 40 50 30 40 30 20 20 10 10 0 0 0 50 100 150 200 250 300 350 400 0 reverse bias safe operating area (RBSOA), IGBT, Inverter IC = f(VCE) RGoff = 1 Ω, VGE = ±15 V, Tvj = 150 °C 1 2 3 4 5 6 7 8 9 10 output characteristic (typical), IGBT, Inverter IC = f(VCE) VGE = 15 V 500 400 450 350 400 300 350 250 300 250 200 200 150 150 100 100 50 50 0 0 0 Datasheet 200 400 600 800 1000 1200 1400 0.0 7 0.5 1.0 1.5 2.0 2.5 3.0 3.5 1.00 2021-03-31 IFS200B12N3E4_B37 MIPAQ™base module 6 Characteristics diagrams output characteristic (typical), IGBT, Inverter IC = f(VCE) Tvj = 150 °C transfer characteristic (typical), IGBT, Inverter IC = f(VGE) VCE = 600 V 400 400 350 350 300 300 250 250 200 200 150 150 100 100 50 50 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5 transient thermal impedance , IGBT, Inverter Zth = f(t) 6 7 8 9 10 11 12 13 forward characteristic (typical), Diode, Inverter IF = f(VF) 1 400 350 300 0.1 250 200 150 0.01 100 50 0.001 0.001 Datasheet 0 0.01 0.1 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 10 8 1.00 2021-03-31 IFS200B12N3E4_B37 MIPAQ™base module 6 Characteristics diagrams switching losses (typical), Diode, Inverter Erec = f(IF) VCE = 600 V, RGon = RGon(IGBT) switching losses (typical), Diode, Inverter Erec = f(RG) VCE = 600 V, IF = 200 A 25 25 20 20 15 15 10 10 5 5 0 0 0 50 100 150 200 250 300 350 400 0 transient thermal impedance , Diode, Inverter Zth = f(t) 1 2 3 4 5 6 7 8 9 10 temperature characteristic (typical), NTC-Thermistor R = f(TNTC) 1 100000 10000 0.1 1000 0.01 0.001 Datasheet 100 0.01 0.1 1 0 10 9 25 50 75 100 125 150 1.00 2021-03-31 IFS200B12N3E4_B37 MIPAQ™base module 7 Circuit diagram 7 Circuit diagram J Figure 2 Datasheet 10 1.00 2021-03-31 IFS200B12N3E4_B37 MIPAQ™base module 8 Package outlines 8 Package outlines Infineon Figure 3 Datasheet 11 1.00 2021-03-31 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2021-03-31 Published by Infineon Technologies AG 81726 Munich, Germany © 2021 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX- IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 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