IFX81481ELVXUMA1

IFX81481ELV 10 A synchronous DC/DC Step-Down Controller Data Sheet Rev. 1.0, 2013-09-02 Standard Power 10 A synchronous DC/DC Step-Down Controller 1 • • • • • • • • • • • • • • • • IFX81481ELV Overview 10 A synchronous step down Controller Current limitation adjustable with Shunt resistor or Rdson Adjustable output voltage ± 2% output voltage tolerance External power transistors Integrated bootstrap diode PWM regulation Very Low Dropout Operation: max Duty Cycle higher than 99% Input voltage range from 4.75V to 45V Adjustable switching frequency from 100 to 700 kHz Synchronization input Very low shutdown current consumption (99 % – 1.20 Dmax x VS V – -40 125 °C – Note: Within the functional range the IC operates as described in the circuit description. The electrical characteristics are specified within the conditions given in the related electrical characteristics table. 4.3 Pos. 4.3.1 4.3.2 Thermal Resistance Parameter Junction to Case Symbol 1) Junction to Ambient 4.3.3 4.3.4 1) 2) RthJC RthJA RthJA RthJA Limit Values Unit Conditions Min. Typ. Max. – 10 – K/W – – 47 – K/W 2s2p – 54 – K/W 1s0p + 600 mm2 – 64 – K/W 1s0p + 300 mm2 1) Not subject to production test, specified by design. 2) Specified RthJA value is according to JEDEC 2s2p (JESD 51-7) + (JESD 51-5) and JEDEC 1s0p (JESD 51-3) + heatsink area at natural convection on FR4 board; Data Sheet 7 Rev. 1.0, 2013-09-02 IFX81481ELV Regulator 5 Regulator 5.1 Description The IFX81481ELV is a synchronous step down controller for output currents up to 10 Amps. The power stage consists of two external MOSFETs with logic level gate signal. The switching frequency can be adjusted between 100 and 700 kHz by connecting an external resistor between pin SYNC/FREQ and GND (FREQ-mode). By connecting this pin to a frequency source the IFX81481ELV might be synchronized to a frequency between 350 and 700 kHz (SYNC-mode). A valid high signal at pin EN will start the regulator. Then it will ramp up with a soft start ramp, which is derived from the switching frequency (i.e.: the soft start ramp will last around 1 msec at a switching frequency of 500 kHz). The regulator is working in voltage mode, there is no feedforward function included and it operates in continuous conduction mode only. An external compensation network connected to pin COMP is necessary to compensate the switching ripple on the feedback line. The compensation network must be adapted to the application. The regulator can withstand a short circuit at the output. The current limitation can be implemented measuring the drop across the Rdson of the external high-side MOSFET (Rdson-configuration), or by shunt resistor located in series with the drain of high-side MOSFET (Shunt-configuration). The output voltage is monitored using pin FB. If the output voltage exceeds the overvoltage threshold (10% higher than the regulated output voltage), the low-side external MOSFET is turned on in order to discharge the output capacitor and lower the output voltage to the nominal value. SENSELOW BTS UV SENSEHIGH BLANK OC UG CLOCK LS COMP Force Min Duty PWM EA COMP + UG DRIVER CROSS CONDUCTION SAFETY LOGIC BUO L O G IC Skipping Mode FB PHS DETECT VREF 1.2V + - LG V_LS SAWTOOTH GEN UV POR IVCC LG DRIVER PGND BG SOFTSTART LOGIC BG Figure 3 Data Sheet TSD OV OVERVOLTAGESHUTDOWN THERMALSHUTDOWN Block Diagram Buck Regulator 8 Rev. 1.0, 2013-09-02 IFX81481ELV Regulator 5.2 The Soft start x0.6 Vfb + UV - UV CK SoSt_25%End Vbg EN POR IVCC TSD SoSt_100%End Logic Stair start Force min Toff To_LG Vref1V2 CK Figure 4 Soft start block diagram An integrated Soft start function (of duration 512 clock cycles, where a clock cycle is derived from the switching frequency) ensures that the inrush current will be limited and prevents from output voltage overshoots. When the regulator starts from OFF state (EN pin forced from low to high), an additional pre-charging function is triggered before Soft start: for a time slot of 64 clock cycles, low-side MOSFET is switched ON and OFF at fixed frequency of 1.5 MHz and 50% duty cycle, in order to charge in advance the bootstrap capacitor. If an under voltage appears during Soft start, it is recognized only after 25% of the Soft start stair, this is realized by the signal SoSt_25%End. In case 1) the UV is permanent fault (i.e. the BTS cap is not charged or shorted, or the output cap is shorted). In case 2) the UV failure is removed before the 25% of the Soft start procedure is reached (i.e. the output cap is too large and the system is not able to charge it fast enough). In case 1), a permanent UV, the soft start begins again the procedure after a delay of 512 clock cycles. In case of pre-charged output condition, the system recognizes it and keeps the external switches in high impedance in order not to discharge the output capacitance. sta rt 1 .2V D e la y D e la y V re f1 V 2 S o S t_ 2 5% E n d UV F ig u re 1) sta rt 1 .2V 1.2 V D e la y V re f1 V 2 S o S t_ 2 5% E n d UV i.e o u tp u t sh o rt Figure 5 Data Sheet F ig u re 2) Soft start timing 9 Rev. 1.0, 2013-09-02 IFX81481ELV Regulator 5.3 Operation Mode The PWM pulses are voltage controlled. The error amplifier and the PWM comparator are creating the PWM pulses using the oscillator saw-tooth signal and the feedback voltage. The pulse-width modulation is done so that the feedback voltage is similar to the reference voltage (1.2 V). To achieve a stable output voltage even under very low or very high duty cycle conditions a pulse skipping mode is implemented. When the minimum off time for the up-side gate is reached (boundary between dark grey area and light grey area in Figure 6), the IFX81481ELV operates in pulse skipping mode for high duty cycle. This operation mode is typically used with low supply voltages for very low dropout operation. If the minimum on time for the up-side gate is reached (boundary between dark grey area and light grey area in Figure 6) the IFX81481ELV operates in pulse skipping mode for low duty cycle. Figure 6 Data Sheet Operation Mode 10 Rev. 1.0, 2013-09-02 IFX81481ELV Regulator 5.4 Bootstrap concept The high-side MOSFET driver is supplied by the bootstrap concept. The capacitor at pin BTS and BUO must be switched to GND to be charged by the internal LDO. A monitoring circuit controls the charge of the bootstrap capacitor. If the charge is sufficient the driver will trigger the external high-side MOSFET. If a recharge is necessary, the capacitor will be loaded using the integrated bootstrap diode by switching pin BUO to ground forcing a proper PWM signal. For very high duty-cycle and high input capacitance of the MOSFET, it may be necessary to consider use of an external diode placed in parallel with the internal bootstrap diode to speed up the recharge of the bootstrap capacitor. In addition, the small voltage drop across the external diode improves the overdrive of the gate of the high-side MOSFET. BTS UV VS CBTS UG LS UG DRIVER Linear Regulator PWM CROSS CONDUCTION SAFETY LOGIC BUO EN PHS DETECT LG V_LS IVCC LG DRIVER PGND Parts in grey are optional Figure 7 Data Sheet Bootstrap concept 11 Rev. 1.0, 2013-09-02 IFX81481ELV Regulator 5.5 Current Limitation 5.5.1 Rdson-configuration To optimize the efficiency, the regulator is measuring the voltage (which is the current through the MOSFET multiplied by the Rdson) over the high-side switch, if it should be too high the pulse will be cut off. By varying the sense resistor between the pin sensehigh and the drain of the high-side MOSFET the current limit can be adjusted. Senselow is connected to the source of the MOSFET. P o w e r c u rre n t flo w E x te rn a l h ig h s id e M O S VS BUO 95µA R_SENSE S E N S E H IG H SEN SE LO W OVERCURRENT CO M PARATO R (O V C ) IOC_lim,ref OVERCURRENT L O G IC S IG N A L BLANK Figure 8 Rdson-configuration for current limitation The figure above shows the concept of the Rdson configuration for current limitation. The characteristics of the external high-side MOSFET must be known, especially its thermal behavior. The current limitation might be calculated with the following equation: I limit = I OC Data Sheet _ lim, ref ⋅ R _ SENSE Rdson _ EXT _ MOS 12 Rev. 1.0, 2013-09-02 IFX81481ELV Regulator 5.5.2 Shunt-configuration The regulator is offering a second possibility to do a more accurate current measurement by shunt resistor located in series with the drain of the high-side MOSFET. The shunt resistor will be placed in the input current path and be connected to the overcurrent comparator with pin senselow and through a sense resistor to pin sensehigh. By varying the sense resistor the current limit can be adjusted. P o w e r c u rre n t flo w E x te rn a l h ig h s id e M O S VS BUO R_S HU N T 95µA R_SENSE S E N S E H IG H SENSELO W OVERCURRENT COMPARATOR (O V C ) IOC_lim,ref OVERCURRENT L O G IC S IG N A L BLANK Figure 9 Shunt-configuration for current limitation The Shunt-configuration works similar to the Rdson-configuration, it uses also pins Sensehigh and Senselow. The current limitation might be calculated with the following equation: I Data Sheet limit = I OC _ lim, ⋅ ref 13 R _ SENSE R _ SHUNT Rev. 1.0, 2013-09-02 IFX81481ELV Regulator 5.6 Electrical Characteristics Electrical Characteristics: VS = 6.0 V to 40 V, Tj = -40°C to +125°C, all voltages with respect to ground (unless otherwise specified) Pos. Parameter Symbol Limit Values Min. 5.6.1 Output voltage VFB Typ. Unit Conditions V VEN = 12V; Max. 1.176 1.200 1.224 ICC < 10A 5.6.2 Output overvoltage threshold VFB,OV 1.05 x 1.1 x 1.15 x V VFB VFB VFB VFB increasing; VCOMP = 3V; Monitor LG low to high 5.6.3 Output overvoltage threshold hysteresis VFB,OV,hyst 0.02 x VFB IFB -1 gmEA 0.8 REA,OUT 1.0 VFB VFB -0.1 0 µA 1.2 1.6 mS – – MΩ – 1.6 V 5.6.4 FB input current 5.6.5 Error amplifier, gain 5.6.6 Error amplifier, output resistance 5.6.7 Error amplifier, ramp amplitude, FREQ-mode VComp,peak 1.0 Error amplifier, ramp amplitude, SYNC-mode VComp,peak 0.6 5.6.8 0.05 x 0.08 x V – VFB = 1.2V VFB = 1.2V VFB = 1.2V; VCOMP = 1.2V VFB = 1.2V; FREQ-mode; fFREQ = 100 -700kHz; Monitor LG to peak,FREQ – 2.6 V VFB = 1.2V; SYNC-mode; fSYNC = 350 -700kHz; Monitor LG to peak,SYNC 5.6.9 Error amplifier output, source and IComp,max sink current 150 280 450 μA Source current: VFB = 0.8V, VCOMP= 2.5V; Sink current: VFB = 2.4V, VCOMP= 2.5V 5.6.10 Comp pin, minimum voltage VComp,min 0.8 – – V VCOMP increasing; Monitor UG Bootstrap under voltage lockout threshold for UG turn-off VBTS,off 5.6.12 Bootstrap under voltage lockout, hysteresis VBTS,hyst – 300 – mV – 5.6.13 Bootstrap capacitor discharge current IBTS_BUO – 150 – µA VBTS_BUO = 4.5V 5.6.14 Bootstrap diode forward voltage – 0.8 – V IDBTS = 20mA 5.6.15 Minimum on time Upper Gate – 100 – ns 1) 5.6.16 Minimum off time Upper Gate – 100 – ns 1) 5.6.17 Soft start ramp VDBTS,fwd TUGON,min TUGOFF,min tstart – 512 x 1/f – µs 5.6.18 Input under voltage shutdown threshold VS,off 3.7 – – V f = fFREQ, FREQ-mode; f = fSYNC, SYNC-mode VS decreasing 5.6.11 Data Sheet VBUO – – V 14 VBTS_BUO voltage decreasing + 3.0 Rev. 1.0, 2013-09-02 IFX81481ELV Regulator Electrical Characteristics: VS = 6.0 V to 40 V, Tj = -40°C to +125°C, all voltages with respect to ground (unless otherwise specified) Pos. Parameter 5.6.19 Input voltage startup threshold 5.6.20 Input under voltage shutdown hysteresis Symbol VS,on VS,hyst Limit Values Unit Conditions Min. Typ. Max. – – 4.75 V VS increasing – 300 – mV – Gate Driver for upper Switch 5.6.21 Upper Gate Driver Peak Sourcing IUG,SRC Current – -380 – mA VUG = 3.5V1) 5.6.22 Upper Gate Driver Peak Sinking Current IUG,SNK – 550 – mA VUG = 1.5V1) 5.6.23 Upper Gate Driver Output Rise Time tR,UG – 30 60 ns 5.6.24 Upper Gate Driver Output Fall Time tF,UG – 20 40 ns 5.6.25 Upper Gate Driver Output Voltage VUG – 4.4 5.2 V CL,UG = 3.3nF; VUG = 1V to 4V CL,UG = 3.3nF; VUG = 1V to 4V CL,UG = 3.3nF Gate Driver for lower Switch 5.6.26 Lower Gate Driver Peak Sourcing ILG,SRC Current – -380 – mA VLG = 3.5V1) 5.6.27 Lower Gate Driver Peak Sinking Current ILG,SNK – 550 – mA VLG = 1.5V1) 5.6.28 Lower Gate Driver Output Rise Time tR,LG – 30 60 ns 5.6.29 Lower Gate Driver Output Fall Time tF,LG – 20 40 ns 5.6.30 Lower Gate Driver Output Voltage VLG 5.05 5.40 5.75 V 5.6.31 Overcurrent limitation 89 95 101 μA CL,LG = 3.3nF; VLG = 1V to 4V CL,LG = 3.3nF; VLG = 1V to 4V CL,LG = 3.3nF; VS ≥ 7V VCOMP = 3V IOC_lim,ref sensehigh-senselow decreasing; monitor max current on sensehigh 5.6.32 Overcurrent comparator offset voltage VOCComp, -15 Offset – +15 mV VFB = 1V; VCOMP = 4V; sensehigh-senselow increasing 1) Not subject to production test, specified by design. Data Sheet 15 Rev. 1.0, 2013-09-02 IFX81481ELV Module Oscillator 6 Module Oscillator 6.1 Description The oscillator supplies the device with a constant frequency. When the device is not operating in pulse skipping mode, the external MOSFETs are switched on and off with the same constant frequency. Some safety functions are synchronized also to this frequency. The internal oscillator is used to determine the switching frequency of the buck regulator. The switching frequency can be selected from 100 kHz to 700 kHz with an external resistor connected at pin SYNC/FREQ to GND. To set the switching frequency with an external resistor the following formula can be applied R FREQ = 1 (149 × 10 [ ])× ( f −12 s Ω FREQ [1s ]) ( ) − 2 . 0 × 10 3 [Ω ] [Ω ] 80 70 RFREQ (kΩ) 60 50 40 30 20 10 0 100 200 300 400 500 600 700 Switching Frequency fFREQ (kHz) Figure 10 Resistor RFREQ versus Switching Frequency fFREQ The turn-on frequency can optionally be set externally via the pin SYNC/FREQ. In this case the synchronization of the PWM-on signal refers to the falling edge of the pin SYNC/FREQ input signal. Data Sheet 16 Rev. 1.0, 2013-09-02 IFX81481ELV Module Oscillator 6.2 Electrical Characteristics Module Oscillator Electrical Characteristics: Module Oscillator VS = 6.0 V to 40 V, Tj = -40°C to +125°C, all voltages with respect to ground (unless otherwise specified) Pos. Parameter Symbol Limit Values Unit Conditions Min. Typ. Max. fFREQ fFREQ 250 300 350 kHz RFREQ = 20kΩ 100 – 700 kHz 17% internal tolerance + external resistor tolerance IFREQ – – 800 µA VFREQ = 0 V – 700 kHz 1) 80 % Oscillator: 6.2.1 Oscillator Frequency 6.2.2 Oscillator Frequency Adjustment Range 6.2.3 FREQ Supply Current Synchronization 6.2.4 Synchronization Frequency Capture Range fSYNC 350 6.2.5 Synchronization Signal Duty cycle 20 6.2.6 Synchronization Signal High Logic Level Valid DSYNC VSYNC,H 3.0 – – V 2) 6.2.7 Synchronization Signal Low Logic Level Valid VSYNC,L – – 0.8 V 2) 1) Synchronization frequency out of the specified range leads to complete malfunction of the device 2) Synchronization of external UG ON signal to falling edge Data Sheet 17 Rev. 1.0, 2013-09-02 IFX81481ELV Linear Regulator 7 Linear Regulator 7.1 Description The internal linear voltage regulator supplies the low-side gate driver directly (typical voltage 5.4 V) and through a diode the high-side gate driver. The current capability is up to 50 mA. An external output capacitor with low ESR is required on pin IVCC for stability and buffering transient load currents. During normal operation the gate drivers will draw transient currents from the linear regulator and its output capacitor. Proper sizing of the output capacitor must be considered to supply sufficient peak current to the gate of the external MOSFETs. An integrated poweron reset circuit monitors the linear regulator output voltage and resets the device in case the output voltage falls below the power-on reset threshold. The power-on reset helps protect the external MOSFETs from excessive power dissipation by ensuring the gate drive voltage is sufficient to enhance the gate of an external logic level nchannel MOSFET. For IVCC voltage lower than 5V the proper charging of the bootstrap capacitor is not guaranteed. The internal linear voltage regulator is implemented to supply the gate drivers, therefore a large voltage ripple may be present on this output due to the pulsed current sinked by internal drivers and bootstrap diode. This output should not be used to supply loads than the internal ones. VS IVCC 1 3 Linear Regulator EN Figure 11 Data Sheet HS Gate Driver 2 LS Gate Driver Linear Regulator Block Diagram and Simplified Application Circuit 18 Rev. 1.0, 2013-09-02 IFX81481ELV Linear Regulator 7.2 Electrical Characteristics Electrical Characteristics: Linear Regulator VS = 6V to 40V; Tj = -40°C to +125°C, all voltages with respect to ground, positive current flowing into pin; (unless otherwise specified) Pos. Parameter Symbol Limit Values Unit Conditions Min. Typ. Max. 5.4 5.75 V 7 V ≤ VS ≤ 40 V; 0.1 mA ≤ IIVCC ≤ 50 mA 110 mA 800 mV VS = 13.5 V; VIVCC = 5.1V IIVCC = 50mA 1) 3 µF 2) 0.5 Ω f = 10kHz VIVCC decreasing; VIVCC - VIVCC,RTH,d VIVCC decreasing VIVCC increasing 7.2.1 Output Voltage VIVCC 5.05 7.2.2 Output Current Limitation ILIM 51 7.2.3 7.2.6 VDR Output Capacitor CIVCC 0.47 Output Capacitor ESR RIVCC,ESR Undervoltage Reset Headroom VIVCC,HDRM 100 – – mV 7.2.7 Undervoltage Reset Threshold VIVCC,RTH,d 4.0 – – V 7.2.8 Undervoltage Reset Threshold VIVCC,RTH,i – – 4.5 V 7.2.4 7.2.5 Drop out Voltage 1) Measured when the output voltage VIVCC has dropped 100 mV from its nominal value. 2) Minimum value given is needed for regulator stability; application might need higher capacitance than the minimum. Data Sheet 19 Rev. 1.0, 2013-09-02 IFX81481ELV Module Enable and Thermal Shutdown 8 Module Enable and Thermal Shutdown 8.1 Description With the enable pin the device can be set in off-state reducing the current consumption to less than 2µA. The enable function features an integrated pull down resistor which ensures that the IC is shut down and the external MOSFETs are off in case the pin EN is left open. The integrated thermal shutdown function turns the external MOSFETs off in case of overtemperature. The typical junction shutdown temperature is 175°C, with a minimum of 160°C. After cooling down, the IC will automatically restart with soft start. The thermal shutdown is an integrated protection function designed to prevent IC destruction when operating under fault conditions. 8.2 Electrical Characteristics Module Enable, Bias and Thermal Shutdown Electrical Characteristics: Enable, Bias and Thermal Shutdown VS = 6.0 V to 40 V, Tj = -40°C to +125°C, all voltages with respect to ground (unless otherwise specified) Pos. Parameter Symbol Limit Values Min. Typ. Max. Unit Conditions 8.2.1 Current Consumption, shut down mode Iq,OFF – 0.1 2 µA 8.2.2 Current Consumption, active mode Iq,ON – 3 10 mA VEN = 0.8V; Tj < 105°C; Vs = 16V VEN = 5.0V; IIVCC= 0mA; VS = 16V 8.2.3 VEN,lo Enable low signal valid VEN,hi Enable hysteresis VEN,HY Enable high input current IEN,hi Enable low input current IEN,lo Over temperature shutdown Tj,sd Over temperature shutdown Tj,sd_hyst 3.0 – – V – – – 0.8 V – 200 300 400 mV – – 30 µA – 0.1 1 µA 160 175 190 °C 1) – 15 – K 1) 8.2.4 8.2.5 8.2.6 8.2.7 8.2.8 8.2.9 Enable high signal valid VEN = 16V VEN = 0.5V hysteresis 1) Not subject to production test, specified by design. Data Sheet 20 Rev. 1.0, 2013-09-02 IFX81481ELV Application Information 9 Application Information Note: The following information is given as a hint for the implementation of the device only and shall not be regarded as a description or warranty of a certain functionality, condition or quality of the device. 9.1 Application Diagram CIVCC DBOOT V_S CIN1 CIN2 CIN IVCC * sensehigh VS Rsense senselow LDO V_ls EN EN BTS Enable CBTS GND Softstart UG Temp .S D SYNC/ FREQ HIGH Osc Sync L1 BUO Step Down COMP V_CC V_ls Regulator LOW LG D1 FB COUT1 COUT2 PGND IFX81481ELV GND R1 RF GND CL RFREQ CCF Parts in grey are optional R2 CF * Parts suggested for suppresion of EME Figure 12 Application Diagram (Current limitation with Rdson-configuration) Note: This is a very simplified example of an application circuit. The function must be verified in the real application CIVCC DBOOT V_S CIN1 CIN2 CIN IVCC sensehigh Rsense Rshunt * VS senselow LDO V_ls EN EN BTS Enable CBTS GND Softstart UG Temp .S D SYNC/ FREQ HIGH Osc Sync L1 BUO Step Down COMP Regulator V_CC V_ls LG LOW D1 FB COUT1 COUT2 PGND IFX 81481ELV GND RF R1 GND CL RFREQ CCF CF Parts in grey are optional R2 * Parts suggested for suppresion of EME Figure 13 Application Diagram (Current limitation with Shunt-configuration) Note: This is a very simplified example of an application circuit. The function must be verified in the real application Data Sheet 21 Rev. 1.0, 2013-09-02 IFX81481ELV Application Information Ref L1 LOW,HIGH COUT1,COUT2 CIN2 CIN1 RFREQ R1 R2 RF Rsense Rshunt CCF CL CF CIVCC CIN CBTS Figure 14 Data Sheet Value 5.6H Nch,60V,12m 100F10mESR 22F 470F 20k 100k 27.3k 6.65k 1.1k 10m 12pF 120pF 15nF 1F 1F 270nF Manufacturer Coilcraft Infineon Rubycon Kemet Panasonic Panasonic Panasonic Panasonic Panasonic Panasonic VishayDale Kemet Kemet Kemet Kemet Kemet Kemet Partnumber MSS1278T562ML_ IPD50N06S4L12 6SW100M C2220C226M5R2CTU EEEFK1H471AM ERJ3EKF2002V ERJ3EKF1003V ERJ3EKF2742V ERJ3EKF6651V ERJ3EKF1101V WSL3637R0100FEB C0603C120J5GACTU C0603C121J5GACTU C0603C153K5RACTU C1206C105K4RACTU C1206C105K5RACTU C1206C274K5RACTU Type Inductor Transistor Capacitor,PolyAl,6.3V Capacitor,X7R,50V Capacitor,Al,50V Resistor,±1%,0.1W Resistor,±1%,0.1W Resistor,±1%,0.1W Resistor,±1%,0.1W Resistor,±1%,0.1W Resistor,±1%,3W Capacitor,C0G Capacitor,C0G Capacitor,X7R,50V Capacitor,X7R,16V Capacitor,X7R,50V Capacitor,X7R,50V Qty 1 2 2 1 1 1 1 1 1 1 1 1 1 1 1 1 1 Bill of Material for Application Diagram 22 Rev. 1.0, 2013-09-02 IFX81481ELV Performance Graphs 10 Performance Graphs Typical Performance Characteristics Efficiency and Power Losses versus Load Current Efficiency versus Load Current 6 100 97 T = 25°C; f = 300kHz T = 25°C; f = 300kHz VS = 12V; RDS,on-Config 96 5 90 95 4 70 3 PLOSS @ VS = 24V 2 60 VS = 12V; Shunt-Config 94 EFFICIENCY (%) 80 POWER LOSSES (W) EFFICIENCY (%) VS = 12V VS = 24V 93 VS = 24V; RDS,on-Config 92 91 VS = 24V; Shunt-Config 90 PLOSS @ VS = 12V 1 50 89 0 40 0,1 1 LOAD CURRENT (A) 88 10 1 Efficiency versus Load Current 98 10 LOAD CURRENT (A) VCC versus Temperature 5,70 f = 300kHz VS = 12V IOUT = 5A VS = 12V 97 T = -40°C 96 5,65 T = 25°C VOUT (V) EFFICIENCY (%) 95 94 5,60 T = 125°C 93 5,55 92 91 5,50 , 90 1,000 10,000 LOAD CURRENT (A) Data Sheet 23 -40 -20 0 20 40 60 TEMPERATURE (°C) 80 100 120 Rev. 1.0, 2013-09-02 IFX81481ELV Performance Graphs Typical Performance Characteristics IVCC versus Temperature IVCC Undervoltage versus Temperature 4,30 5,75 VS = 12V, IIVCC = 50 mA 5,65 4,25 IVCC UNDERVOTAGE (V) 5,55 IVCC (V) 5,45 5,35 4,20 4,15 4,10 5,25 4,05 5,15 5,05 , 4,00 -50 -25 0 25 50 TEMPERATURE (°C) 75 100 125 IVCC versus VS -50 -25 0 25 50 TEMPERATURE (°C) 75 100 125 Bootstrap Diode drop versus Temperature 5,75 1,1 T = 20°C, IIVCC = 50mA 5,65 1,0 5,55 IBTS = 50mA 0,9 IVCC (V) IVCC-BTS (V) 5,45 5,35 IBTS = 20mA IBTS = 10mA 0,8 0,7 5,25 0,6 5,15 0,5 5,05 0 5 Data Sheet 10 15 20 25 VS (V) 30 35 40 45 -50 50 24 -25 0 25 50 TEMPERATURE (°C) 75 100 125 Rev. 1.0, 2013-09-02 IFX81481ELV Performance Graphs Typical Performance Characteristics Load Regulation VS = 12 V Line Regulation ICC = 5 A 5,70 5,70 VS = 12V Temperature forced for the entire application Load = 5A Temperature forced for the entire application 125°C 5,65 5,65 25°C VOUT (V) 25°C VOUT (V) 125°C 5,60 5,60 -40°C -40°C 5,55 5,55 5,50 0 1 Data Sheet 2 3 4 5 LOAD (A) 6 7 8 9 5,50 10 5 10 15 20 25 30 35 40 VS (V) 25 Rev. 1.0, 2013-09-02 IFX81481ELV Performance Graphs Load Step VS = 12 V VCC = 5.6 V ICC = 5 A ICC = 0 A Line Step ICC = 5 A VCC = 5.6 V VS = 24 V VS = 12 V Data Sheet 26 Rev. 1.0, 2013-09-02 IFX81481ELV Package Outlines 11 Package Outlines 0.19 +0.06 0.08 C 0.15 M C A-B D 14x 0.64 ±0.25 1 8 1 7 0.2 M D 8x Bottom View 3 ±0.2 A 14 6 ±0.2 D Exposed Diepad B 0.1 C A-B 2x 14 7 8 2.65 ±0.2 0.25 ±0.05 2) 0.1 C D 8˚ MAX. C 0.65 3.9 ±0.11) 1.7 MAX. Stand Off (1.45) 0 ... 0.1 0.35 x 45˚ 4.9 ±0.11) Index Marking 1) Does not include plastic or metal protrusion of 0.15 max. per side 2) Does not include dambar protrusion PG-SSOP-14-1,-2,-3-PO V02 Figure 15 Package Drawing Green Product (RoHS compliant) To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020). For further package information, please visit our website: http://www.infineon.com/packages. Data Sheet 27 Dimensions in mm Rev. 1.0, 2013-09-02 IFX81481ELV Revision History 12 Revision History Version Date Rev 1.0 2013-09-02 Data Sheet - Initial Release Data Sheet Changes 28 Rev. 1.0, 2013-09-02 Edition 2013-09-02 Published by Infineon Technologies AG 81726 Munich, Germany © 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.