IGB30N60TATMA1

TRENCHSTOP™ Series IGB30N60T q Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology Features:  Very low VCE(sat) 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s  Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners  TRENCHSTOP™ technology for 600V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed  Positive temperature coefficient in VCE(sat)  Low EMI  Pb-free lead plating; RoHS compliant  Qualified according to JEDEC1 for target applications  Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type IGB30N60T C G E PG-TO263-3 VCE IC VCE(sat),Tj=25°C Tj,max Marking Code Package 600V 30A 1.5V 175C G30T60 PG-TO263-3 Maximum Ratings Parameter Symbol Value Collector-emitter voltage, Tj ≥ 25C VCE 600 IC 45 Unit V DC collector current, limited by Tjmax TC = 25C, value limited by bondwire 39 TC = 100C A Pulsed collector current, tp limited by Tjmax ICpul s 90 Turn off safe operating area, VCE = 600V, Tj = 175C, tp = 1µs - 90 Gate-emitter voltage VGE 20 V tSC 5 s Power dissipation TC = 25C Ptot 187 W Operating junction temperature Tj -40...+175 Storage temperature Tstg -55...+150 Soldering temperature (reflow soldering, MSL1) - Short circuit withstand time 2) VGE = 15V, VCC  400V, Tj  150C 1 2) C 260 J-STD-020 and JESD-022 Allowed number of short circuits: 1s. IFAG IPC TD VLS 1 Rev. 2.5 19.05.2015 TRENCHSTOP™ Series IGB30N60T q Thermal Resistance Parameter Symbol Conditions Max. Value Unit 0.80 K/W Characteristic RthJC IGBT thermal resistance, junction – case RthJA Thermal resistance, 6 cm² Cu 40 junction – ambient Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions Value min. typ. max. 600 - - T j =2 5 C - 1.5 2.05 T j =1 7 5 C - 1.9 - 4.1 4.9 5.7 Unit Static Characteristic Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0V , I C = 0 .2m A Collector-emitter saturation voltage VCE(sat) V V G E = 15 V , I C = 30 A Gate-emitter threshold voltage VGE(th) I C = 0. 43m A , VCE=VGE Zero gate voltage collector current ICES V C E = 60 0 V , V G E = 0V µA T j =2 5 C - - 40 T j =1 7 5 C - - 2000 Gate-emitter leakage current IGES V C E = 0V , V G E =2 0 V - - 100 nA Transconductance gfs V C E = 20 V , I C = 30 A - 16.7 - S Integrated gate resistor RGint Ω - Dynamic Characteristic Input capacitance Ciss V C E = 25 V , - 1630 - Output capacitance Coss V G E = 0V , - 108 - Reverse transfer capacitance Crss f= 1 MH z - 50 - Gate charge QGate V C C = 48 0 V, I C =3 0 A - 167 - nC - 7 - nH - 275 - A pF V G E = 15 V LE Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current 1) 1) IC(SC) V G E = 15 V ,t S C  5 s V C C = 4 0 0 V, T j = 15 0 C Allowed number of short circuits: 1s. IFAG IPC TD VLS 2 Rev. 2.5 19.05.2015 TRENCHSTOP™ Series IGB30N60T q Switching Characteristic, Inductive Load, at Tj=25 C Parameter Symbol Conditions Value min. Typ. max. - 23 - - 21 - - 254 - - 46 - - 0.69 - - 0.77 - - 1.46 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets T j=25 C, VCC=400V,IC=30A, VGE=0/15V, rG=10.6, L =136nH,C =39pF L , C f rom Fig. E Energy losses include “tail” and diode reverse recovery. ns mJ Switching Characteristic, Inductive Load, at Tj=175 C Parameter Symbol Conditions Value min. Typ. max. - 24 - - 26 - - 292 - - 90 - - 1.0 - - 1.1 - - 2.1 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets IFAG IPC TD VLS T j=175 C, VCC=400V,IC=30A, VGE=0/15V, rG=10.6, L =136nH,C =39pF L , C f rom Fig. E Energy losses include “tail” and diode reverse recovery. 3 ns mJ Rev. 2.5 19.05.2015 TRENCHSTOP™ Series IGB30N60T q tp=2µs 90A 10µs 70A 60A IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 80A T C =80°C 50A T C =110°C 40A 30A Ic 20A 1kHz 10kHz 1A 1ms DC 0,1A 1V 100kHz f, SWITCHING FREQUENCY 10ms 10V 100V 1000V VCE, COLLECTOR-EMITTER VOLTAGE Figure 1. Collector current as a function of switching frequency (Tj  175C, D = 0.5, VCE = 400V, VGE = 0/15V, rG = 10) Figure 2. Safe operating area (D = 0, TC = 25C, Tj 175C; VGE=0/15V) 40A IC, COLLECTOR CURRENT 160W Ptot, POWER DISSIPATION 50µs Ic 10A 0A 100Hz 10A 120W 80W 40W 30A 20A 10A __ Icmax --- max. current limited by bondwire 0W 25°C 50°C 75°C 0A 25°C 100°C 125°C 150°C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj  175C) IFAG IPC TD VLS 50°C 75°C 100°C 125°C 150°C TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE  15V, Tj  175C) 4 Rev. 2.5 19.05.2015 TRENCHSTOP™ Series IGB30N60T q 80A 50A 60A V G E =20V V G E =20V IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 70A 15V 50A 13V 11V 40A 9V 30A 7V 20A 40A 15V 13V 30A 11V 20A 7V 9V 10A 10A 0A 0A 0V 1V 2V 3V 0V VCE, COLLECTOR-EMITTER VOLTAGE VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE IC, COLLECTOR CURRENT 40A 30A 20A T J =175°C 10A 25°C 0A 4V 6V 8V 2.5V IC =60A 2.0V I C =30A 1.5V IC =15A 1.0V 0.5V 0.0V 0°C VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=20V) IFAG IPC TD VLS 3V Figure 6. Typical output characteristic (Tj = 175°C) 50A 2V 2V VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25°C) 0V 1V 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) 5 Rev. 2.5 19.05.2015 TRENCHSTOP™ Series IGB30N60T q t d(off) t d(off) tf t, SWITCHING TIMES t, SWITCHING TIMES 100ns t d(on) 10ns tf 100ns t d(on) tr tr 10ns 1ns 0A 10A 20A  30A IC, COLLECTOR CURRENT    RG, GATE RESISTOR Figure 9. Typical switching times as a function of collector current (inductive load, TJ=175°C, VCE = 400V, VGE = 0/15V, rG = 10Ω, Dynamic test circuit in Figure E) Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ = 175°C, VCE= 400V, VGE = 0/15V, IC = 30A, Dynamic test circuit in Figure E) t, SWITCHING TIMES t d(off) 100ns tf t d(on) tr 10ns 25°C 50°C 75°C 6V m ax. typ. 5V 4V m in. 3V 2V 1V 0V -50°C 100°C 125°C 150°C TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 30A, rG=10Ω, Dynamic test circuit in Figure E) IFAG IPC TD VLS VGE(th), GATE-EMITT TRSHOLD VOLTAGE 7V 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.43mA) 6 Rev. 2.5 19.05.2015 IGB30N60T q TRENCHSTOP™ Series *) Eon and Ets include losses due to diode recovery 5.0mJ *) E on and E ts include losses Ets* due to diode recovery 4.0mJ 3.0mJ 2.0mJ Eoff 1.0mJ E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES E ts * 3.0m J E off 2.0m J 1.0m J E on * Eon* 0.0m J 0.0mJ 0A 10A 20A 30A 40A  50A  IC, COLLECTOR CURRENT *) Eon and Ets include losses due to diode recovery *) E on and E ts include losses Eoff Eon* due to diode recovery 3.0m J E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES 1.5mJ 0.5mJ  Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ = 175°C, VCE = 400V, VGE = 0/15V, IC = 30A, Dynamic test circuit in Figure E) Ets* 1.0mJ  RG, GATE RESISTOR Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ = 175°C, VCE = 400V, VGE = 0/15V, rG = 10Ω, Dynamic test circuit in Figure E) 2.0mJ  2.5m J 2.0m J E ts * 1.5m J E off 1.0m J E on * 0.5m J 0.0mJ 25°C 50°C 75°C 0.0m J 300V 100°C 125°C 150°C TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 30A, rG = 10Ω, Dynamic test circuit in Figure E) IFAG IPC TD VLS 350V 400V 450V 500V 550V VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ = 175°C, VGE = 0/15V, IC = 30A, rG = 10Ω, Dynamic test circuit in Figure E) 7 Rev. 2.5 19.05.2015 C iss 1nF 15V 120V c, CAPACITANCE VGE, GATE-EMITTER VOLTAGE TRENCHSTOP™ Series IGB30N60T q 480V 10V 5V C oss 100pF C rss 0V 0nC 30nC 60nC 90nC 120nC 150nC 180nC 0V QGE, GATE CHARGE 10V 20V 30V 40V VCE, COLLECTOR-EMITTER VOLTAGE Figure 17. Typical gate charge (IC=30 A) Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz) tSC, SHORT CIRCUIT WITHSTAND TIME IC(sc), short circuit COLLECTOR CURRENT 12µs 400A 300A 200A 100A 0A 12V 14V 16V 8µs 6µs 4µs 2µs 0µs 10V 18V VGE, GATE-EMITTETR VOLTAGE Figure 19. Typical short circuit collector current as a function of gateemitter voltage (VCE  400V, Tj  150C) IFAG IPC TD VLS 10µs 11V 12V 13V 14V VGE, GATE-EMITETR VOLTAGE Figure 20. Short circuit withstand time as a function of gate-emitter voltage (VCE=400V, start at TJ=25°C, TJmax