IGC07T120T8LX1SA2

IG BT TRENCHSTOPTM IGBT4 Low Power Chip IGC07T120T8L Dat a She et Indust rial Po wer C o ntrol IGC07T120T8L Table of Contents Features and Applications ............................................................................................................................... 3 Mechanical Parameters .................................................................................................................................... 3 Maximum Ratings ............................................................................................................................................. 4 Static and Electrical Characteristics .............................................................................................................. 4 Further Electrical Characteristics ................................................................................................................... 5 Chip Drawing ..................................................................................................................................................... 6 Revision History ............................................................................................................................................... 7 Relevant Application Notes ............................................................................................................................. 7 Legal Disclaimer ............................................................................................................................................... 8 L7483P, L7483V 2 Rev. 2.1, 20.08.2015 IGC07T120T8L TRENCHSTOPTM IGBT4 Low Power Chip Features:  1200V trench & field stop technology  Low switching losses  Positive temperature coefficient  Easy paralleling Recommended for:  Low / medium power modules Applications:  Low / medium power drives Chip Type VCE ICn 1 Die Size Package IGC07T120T8L 1200V 4A 2.54mm x 2.72mm Sawn on foil Mechanical Parameters Die size 2.54 x 2.72 Emitter pad size See chip drawing mm Gate pad size 2 0.358 x 0.514 Area total 6.91 Thickness 115 µm Wafer size 200 mm Maximum possible chips per wafer 4019 Passivation frontside Photoimide Pad metal 3200nm AlSiCu Ni Ag – system To achieve a reliable solder connection it is strongly recommended not to consume the Ni layer completely during production process Backside metal Die bond Electrically conductive epoxy glue and soft solder Wire bond Al, ≤350µm  0.65mm; max. 1.2mm Reject ink dot size for original and sealed MBB bags Ambient atmosphere air, temperature 17°C – 25°C, 99% Nitrogen or inert gas, humidity