IGC18T120T8QX1SA1

IG BT TRENCHSTOPTM IGBT4 High Speed Chip IGC18T120T8Q Dat a She et Indust rial Po wer C o ntrol IGC18T120T8Q Table of Contents Features and Applications ............................................................................................................................... 3 Mechanical Parameters .................................................................................................................................... 3 Maximum Ratings ............................................................................................................................................. 4 Static and Electrical Characteristics .............................................................................................................. 4 Further Electrical Characteristics ................................................................................................................... 5 Chip Drawing ..................................................................................................................................................... 6 Revision History ............................................................................................................................................... 7 Relevant Application Notes ............................................................................................................................. 7 Legal Disclaimer ............................................................................................................................................... 8 L7633S, L7633Q 2 Rev. 2.0, 13.10.2015 IGC18T120T8Q TRENCHSTOPTM IGBT4 High Speed Chip Features:  1200V trench & field stop technology  Low switching losses  Positive temperature coefficient  Easy paralleling Recommended for:  Discrete components Applications:  High frequency drives  Uninterruptible power supplies  Welding  Solar inverters Chip Type VCE ICn 1 Die Size Package IGC18T120T8Q 1200V 15A 4.16mm x 4.34mm Sawn on foil Mechanical Parameters Die size 4.16 x 4.34 Emitter pad size See chip drawing mm Gate pad size 2 1.185 x 0.702 Area total 18.05 Thickness 115 µm Wafer size 200 mm Maximum possible chips per wafer 1510 Passivation frontside Photoimide Pad metal Backside metal 3200nm AlSiCu Ni Ag – system To achieve a reliable solder connection it is strongly recommended not to consume the Ni layer completely during production process Die bond Electrically conductive epoxy glue and soft solder Wire bond Al, ≤500µm  0.65mm; max. 1.2mm Reject ink dot size for original and Storage environment sealed MBB bags (