IGOT60R070D1
IGOT60R070D1
600V CoolGaN™ enhancement-mode Power Transistor
Features
Enhancement mode transistor – Normally OFF switch
Ultra fast switching
20
No reverse-recovery charge
1
Capable of reverse conduction
11
1
Low gate charge, low output charge
10
20
Superior commutation ruggedness
Qualified for industrial applications according to JEDEC
10
11
Standards (JESD47 and JESD22)
Benefits
Improves system efficiency
Improves power density
Gate
9, 10
Drain
13,14,15,16,17,18
Kelvin Source
8
Source
1,2,3,4,5,6,7, heatslug
not connected
11,12,19,20
Enables higher operating frequency
System cost reduction savings
Reduces EMI
Applications
Industrial, telecom, datacenter SMPS based on the half-bridge topology
(half-bridge topologies for hard and soft switching such as Totem pole PFC,
high frequency LLC).
For other applications: review CoolGaN™ reliability white paper and contact
Infineon regional support
Table 1
Key Performance Parameters at Tj = 25 °C
Parameter
VDS,max
RDS(on),max
QG,typ
ID,pulse
Qoss @ 400 V
Qrr
Table 2
Value
600
70
5.8
60
41
0
Ordering Information
Type / Ordering Code
IGOT60R070D1
Final Data Sheet
Unit
V
mΩ
nC
A
nC
nC
www.infineon.com
Package
PG-DSO-20-87
Marking
Related links
60R070D1
see Appendix A
Please read the Important Notice and Warnings at the end of this document
Rev. 2.14
2021-10-26
IGOT60R070D1
600V CoolGaN™ enhancement-mode Power Transistor
Table of Contents
Features…… .................................................................................................................................. 1
Benefits…… .................................................................................................................................. 1
Applications ................................................................................................................................... 1
Table of Contents ........................................................................................................................... 2
1
Maximum ratings ........................................................................................................... 3
2
Thermal characteristics .................................................................................................. 4
3
Electrical characteristics ................................................................................................ 5
4
Electrical characteristics diagrams .................................................................................. 7
5
Test Circuits ................................................................................................................. 13
6
Package Outlines .......................................................................................................... 14
7
Appendix A ................................................................................................................... 15
8
Revision History ........................................................................................................... 16
Final Data Sheet
2
Rev. 2.14
2021-10-26
IGOT60R070D1
600V CoolGaN™ enhancement-mode Power Transistor
1
Maximum ratings
at Tj = 25 °C, unless otherwise specified. Continuous application of maximum ratings can deteriorate transistor
lifetime. For further information, contact your local Infineon sales office.
Table 3
Maximum ratings
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
Note/Test Condition
Drain source voltage, continuous 1
VDS,max
-
-
600
V
VGS = 0 V
Drain source destructive breakdown
voltage 2
VDS,bd
800
-
-
V
VGS = 0 V, IDS = 12.2 mA
Drain source voltage, pulsed 2
VDS,pulse
-
-
750
V
-
-
650
V
Tj = 25 °C; VGS ≤ 0 V; ≤1 hour
of total time
Tj = 125 °C, VGS ≤ 0 V; ≤1 hour
of total time
Switching surge voltage, pulsed 2
VDS,surge
-
-
750
V
DC bus voltage = 700 V; turn
off VDS,pulse = 750 V; turn on
ID,pulse = 27 A; Tj = 105 °C;
f ≤ 100 kHz, t ≤ 100 secs (10
million pulses)
Continuous current, drain source
ID
-
-
31
20
14
A
TC = 25 °C; Tj = Tj, max
TC = 100 °C; Tj = Tj, max
TC = 125 °C; Tj = Tj, max
Pulsed current, drain source
34
ID,pulse
-
-
60
A
TC = 25 °C; IG = 26.1 mA;
See Figure 3;
Pulsed current, drain source
45
ID,pulse
-
-
35
A
TC = 125 °C; IG = 26.1 mA;
See Figure 4;
IG,avg
-
-
20
mA
Tj = -55 °C to 150 °C;
Gate current, pulsed 4 6
IG,pulse
-
-
2000
mA
Tj = -55 °C to 150 °C;
tPULSE = 50 ns, f=100 kHz
Gate source voltage, continuous 6
VGS
-10
-
-
V
Tj = -55 °C to 150 °C;
Gate source voltage, pulsed 6
VGS,pulse
-25
-
-
V
Tj = -55 °C to 150 °C;
tPULSE = 50 ns, f = 100 kHz;
open drain
Power dissipation
Ptot
-
-
125
W
TC = 25 °C
Operating temperature
Tj
-55
-
150
°C
Gate current, continuous
4 56
All devices are 100% tested at IDS = 12.2 mA to assure VDS ≥ 800 V
Provided as measure of robustness under abnormal operating conditions and not recommended for normal operation
3
Limits derived from product characterization, parameter not measured during production
4
Ensure that average gate drive current, IG,avg is ≤ 20 mA. Please see figure 27 for IG,avg, IG,pulse and IG details
5
Parameter is influenced by rel-requirements. Please contact the local Infineon Sales Office to get an assessment of your application
6
We recommend using an advanced driving technique to optimize the device performance. Please see gate drive application note for
details
Final Data Sheet
3
Rev. 2.14
2021-10-26
1
2
IGOT60R070D1
600V CoolGaN™ enhancement-mode Power Transistor
Storage temperature
Tstg
Drain-source voltage slew-rate
dV/dt
2
-55
-
150
°C
200
V/ns
Max shelf life depends on
storage conditions.
Thermal characteristics
Table 4
Thermal characteristics
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
Thermal resistance, junction-case
RthJC
-
-
1
°C/W
Reflow soldering temperature
Tsold
-
-
260
°C
Final Data Sheet
4
Note/Test Condition
MSL3
Rev. 2.14
2021-10-26
IGOT60R070D1
600V CoolGaN™ enhancement-mode Power Transistor
3
Electrical characteristics
at Tj = 25 °C, unless specified otherwise
Table 5
Static characteristics
Parameter
Symbol
Values
Min. Typ.
Gate threshold voltage
VGS(th)
Gate-Source reverse clamping
voltage
Drain-Source leakage current
Unit
Note/Test Condition
Max.
0.9
0.7
1.2
1.0
1.6
1.4
V
IDS = 2.6 mA; VDS = 10 V; Tj =25 °C
IDS = 2.6 mA; VDS = 10 V; Tj =125 °C
VGS, clamp
-
-
-8
V
IGSS = -1 mA
IDSS
-
1
20
100
-
µA VDS = 600 V; VGS = 0 V; Tj = 25 °C
VDS = 600 V; VGS = 0 V; Tj = 150 °C
Drain-Source leakage current at
IDSSapp
application conditions1
Drain-Source on-state resistance
RDS(on)
-
60
-
μA V = 400 V; V = 0 V; T = 125 °C
DS
GS
j
-
0.055 0.070
0.100
-
Ω
IG = 26.1 mA; ID = 8 A; Tj = 25 °C
IG = 26.1 mA; ID = 8 A; Tj = 150 °C
Gate resistance
-
0.78
Ω
LCR impedance measurement;
f = fres ; open drain;
Table 6
RG,int
-
Dynamic characteristics
Parameter
Symbol
Values
Min. Typ.
Unit
Note/Test Condition
Max.
Input capacitance
Ciss
-
380
-
pF
VGS = 0 V; VDS = 400 V;
f = 1 MHz
Output capacitance
Coss
-
72
-
pF
VGS = 0 V; VDS = 400 V;
f = 1 MHz
Reverse Transfer capacitance
Crss
-
0.3
-
pF
VGS = 0 V; VDS = 400 V;
f = 1 MHz
Effective output capacitance,
energy related 2
Co(er)
-
80
-
pF
VDS = 0 to 400 V
Effective output capacitance,
time related 3
Co(tr)
-
102.5
-
pF
VGS = 0 V; VDS = 0 to 400 V;
Id = const
Output charge
Qoss
-
41
-
nC
VDS = 0 to 400 V
Turn- on delay time
td(on)
-
-
ns
see Figure 23
Turn- off delay time
td(off)
-
10
14
-
ns
see Figure 23
Rise time
tr
-
8
-
ns
see Figure 23
Fall time
tf
-
15
-
ns
see Figure 23
1
2
3
Parameter represents end of use leakage in applications
Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 400 V
Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 400 V
Final Data Sheet
5
Rev. 2.14
2021-10-26
IGOT60R070D1
600V CoolGaN™ enhancement-mode Power Transistor
Table 7
Gate charge characteristics
Parameter
Symbol
Values
Min. Typ.
Gate charge
Table 8
QG
5.8
-
Unit
Note/Test Condition
Max.
-
nC
IGS = 0 to 10 mA; VDS= 400 V;
ID= 8 A
Reverse conduction characteristics
Parameter
Symbol
Values
Min. Typ.
Unit
Note/Test Condition
Max.
Source-Drain reverse voltage
VSD
-
2.2
2.5
V
VGS = 0 V; ISD = 8 A
Pulsed current, reverse
IS,pulse
-
-
60
A
IG = 26.1 mA
Reverse recovery charge
Qrr 1
-
0
-
nC IS = 8 A, VDS = 400 V
Reverse recovery time
trr
-
0
-
ns
Peak reverse recovery current
Irrm
-
0
-
A
1
Excluding Qoss
Final Data Sheet
6
Rev. 2.14
2021-10-26
IGOT60R070D1
600V CoolGaN™ enhancement-mode Power Transistor
4
Electrical characteristics diagrams
at Tj = 25 °C, unless specified otherwise
Power dissipation
Figure 1
Max. transient thermal impedance
Figure 2
140
1
120
100
ZthJC (°C/W)
0.1
PTOTAL (W)
80
60
D=
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
0.01
40
20
0.001
0.01
0
0
20
40
60
80
100
120
140
160
1.00
10.00
100.00
Ptot=f(Tc)
ZthJC=f(tp, D)
Safe operating area
Safe operating area
Figure 4
100
100
tp = 20 ns
tp = 20 ns
tp = 10 μs
tp = 1 ms
10
tp = 100 μs
tp = 10 μs
tp = 100 μs
10
DC
Limited by
RDS(on)
Limited by
RDS(on)
ID (A)
ID (A)
1000.00
Rectangular Pulse Duration (ms)
TCASE (°C)
Figure 3
0.10
1
0.1
DC
tp = 1 ms
1
0.1
0.01
0.01
1
10
VDS (V)
100
1
1000
10
100
1000
VDS (V)
ID=f(VDS); TC = 25 °C
ID=f(VDS); TC = 125 °C
Final Data Sheet
7
Rev. 2.14
2021-10-26
IGOT60R070D1
600V CoolGaN™ enhancement-mode Power Transistor
Repetitive safe operating area1
Figure 5
70
70
60
60
50
50
tp ≤ 20ns
Limited by
RDS(on)
40
ID [A]
40
ID [A]
Repetitive safe operating area1
Figure 6
30
30
tp ≤ 20ns
20
20
10
10
0
Limited by
RDS(on)
0
0
100
200
300
400
500
600
0
100
200
VDS [V]
Tc = 25 °C; Tj ≤ 150 °C
500
600
Typ. output characteristics
Figure 8
90
90
IG=26.1 mA
80
80
IG=10 mA
70
70
IG=2.6 mA
60
IG=10 mA
50
ID [A]
IG=0.26 mA
40
IG=26.1 mA
60
IG=1 mA
50
ID [A]
400
Tc = 125 °C; Tj ≤ 150 °C
Typ. output characteristics
Figure 7
300
VDS [V]
IG=0.1 mA
IG=2.6 mA
40
30
30
20
20
10
10
0
IG=1 mA
IG=0.26 mA
IG=0.1 mA
0
0
2
4
6
8
10
0
2
VDS [V]
ID=f(VDS,IG); Tj = 25 °C
4
6
8
10
VDS [V]
ID=f(VDS,IG); Tj = 125 °C
Parameter is influenced by rel-requirements. Please contact the local Infineon Sales Office to get an assessment of your application.
Final Data Sheet
8
Rev. 2.14
2021-10-26
1
IGOT60R070D1
600V CoolGaN™ enhancement-mode Power Transistor
Typ. Drain-source on-state resistance
Figure 9
Figure 10
140
200
120
180
IG=0.26 mA
IG=0.1 mA
160
100
IG=1 mA
IG=10 mA
80
RDS(on) [mΩ]
RDS(on) (mΩ)
Drain-source on-state resistance
140
IG=2.6 mA
IG=26.1 mA
120
VGS = 3 V
60
IG = 26.1 mA
40
20
100
0
80
-50
0
10
20
30
40
50
0
60
ID [A]
RDS(on)=f(ID,IG); Tj = 125 °C
Figure 11
50
100
150
Tj [oC]
RDS(on)=f(Tj); ID = 8 A
Typ. gate characteristics forward
Figure 12
Typ. gate characteristics reverse
VGS (V)
500
-25
-20
-15
-10
-5
0
0
450
400
-50
350
-100
125°C
25°C
-150
250
200
-200
IGS (mA)
IGS (mA)
300
150
-250
100
50
-300
-55°C
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
-350
VGS (V)
IGS=f(VGS,Tj); open drain
IGS=f(VGS); Tj = 25 °C
Final Data Sheet
9
Rev. 2.14
2021-10-26
IGOT60R070D1
600V CoolGaN™ enhancement-mode Power Transistor
Typ. transfer characteristics
Figure 13
Typ. transfer characteristics
Figure 14
80
50
80
45
70
50
45
70
40
40
60
60
35
50
ID (A)
40
25
20
30
30
40
25
20
30
15
15
20
20
10
10
10
10
5
0
0
1
2
3
4
5
0
5
0
0
1
2
VGS (V)
-5
VDS (V)
-4
-3
-2
-1
Figure 16
0
-8
Typ. channel reverse characteristics
VDS (V)
-6
-4
-2
0
0
0
-1
-1
-2
-2
-3
-3
-4
-4
-5
ID (A)
-6
-5
-6
-5V
-4V
-3V
VDS=f(ID, VGS); Tj = 25 °C
Final Data Sheet
-2V
5
ID, IG =f(VGS); VDS = 8 V ; Tj = 125 °C
Typ. channel reverse characteristics
-7
4
VGS (V)
ID, IG =f(VGS); VDS = 8 V; Tj = 25 °C
Figure 15
3
-1V
0V
VGS
ID (A)
0
-8
IG (mA)
30
IG (mA)
ID (A)
50
35
-6
-5V
-4V
-3V
-7
-2V
-1V
0V
VGS
-7
-8
-8
-9
-9
-10
-10
VDS=f(ID, VGS); Tj = 125 °C
10
Rev. 2.14
2021-10-26
IGOT60R070D1
600V CoolGaN™ enhancement-mode Power Transistor
Figure 17
Typ. channel reverse characteristics
Typ. channel reverse characteristics
Figure 18
60
60
+4V
50
50
0V
+4V
40
IS (A)
IS (A)
40
30
30
20
20
10
10
0
0V
0
0
2
4
6
VSD (V)
8
ID=f(VDS, VGS); Tj = 25 °C
Figure 19
0
2
4
VSD (V)
6
8
10
400
500
ID=f(VDS, VGS); Tj = 125 °C
Typ. gate charge
Typ. capacitances
Figure 20
3.5
1,000.0
Ciss
3.0
C (pF)
2.0
VGS (V)
Coss
100.0
2.5
10.0
1.5
1.0
1.0
Crss
0.5
0.1
0.0
0
1
2
3
Q (nC)
VGS = f(QG); VDCLINK = 400 V; ID = 8 A
Final Data Sheet
4
5
0
6
100
200
300
VDS (V)
CxSS = f(VDS)
11
Rev. 2.14
2021-10-26
IGOT60R070D1
600V CoolGaN™ enhancement-mode Power Transistor
Typ. output charge
Figure 22 Typ. Coss stored Energy
50
10
45
9
40
8
35
7
30
6
EOSS (µJ)
QOSS (nC)
Figure 21
25
20
5
4
15
3
10
2
5
1
0
0
0
QOSS = f(VDS)
Final Data Sheet
100
200
300
VDS (V)
400
500
0
100
200
300
VDS (V)
400
500
EOSS = f(VDS)
12
Rev. 2.14
2021-10-26
IGOT60R070D1
600V CoolGaN™ enhancement-mode Power Transistor
5
Figure 23
Test Circuits
Switching times with inductive load
Figure 24
Switching times waveform
D
T1
RSS
RON
CG
L
G
ROFF
+
S
ID
RSS
CG
T2
VDS
RON
D
400V
SK
G
t
SK
ROFF
S
ID = 8A, RON = 5 Ω; ROFF = 5 Ω; RSS = 300 Ω;
CG = 3.3 nF; VDRV = 12V
Figure 25
Reverse Channel Characteristics Test
Figure 26
Typical Reverse Channel Recovery
D
T1
RSS
RON
CG
L
G
ROFF
+
S
ID
RSS
CG
T2
VDS
RON
D
400V
SK
G
SK
ROFF
S
ID = 8A, RON = 5 Ω; ROFF = 5 Ω; RSS = 300 Ω;
CG = 3.3 nF; VDRV = 12V
Figure 27
The recovery charge is QOSS only, no additional Qrr
Gate current switching waveform
IG,pulse
IG
IG, avg
t
Final Data Sheet
13
Rev. 2.14
2021-10-26
IGOT60R070D1
600V CoolGaN™ enhancement-mode Power Transistor
6
Package Outlines
Figure 28 PG-DSO-20-87 Package Outline, dimensions (mm)
Final Data Sheet
14
Rev. 2.14
2021-10-26
IGOT60R070D1
600V CoolGaN™ enhancement-mode Power Transistor
7
Appendix A
Table 9
Related links
IFX CoolGaNTM webpage: www.infineon.com/why-coolgan
IFX CoolGaNTM reliability white paper: www.infineon.com/gan-reliability
IFX CoolGaNTM gate drive application note: www.infineon.com/driving-coolgan
IFX CoolGaNTM applications information:
o www.infineon.com/gan-in-server-telecom
o www.infineon.com/gan-in-wirelesscharging
o www.infineon.com/gan-in-audio
o www.infineon.com/gan-in-adapter-charger
Final Data Sheet
15
Rev. 2.14
2021-10-26
IGOT60R070D1
600V CoolGaN™ enhancement-mode Power Transistor
8
Revision History
Major changes since the last revision
Revision Date
Description of changes
2.0
2018-04-24
Final version release
2.1
2018-07-23
Updated DSO-20-87 package outline drawing in page14
2.11
2018-10-12
Updated application section; added Appendix A and Fig. 27; updated maximum
rating table footnotes, switching times and figures
2.12
2020-01-16
Added VDS,bd, VDS,pulse , VDS,surge specifications in maximum ratings table of page3
2.13
2021-04-27
Updated Tsold specification to 260°C in table 4; updated IGSS specification at 125°C to
-2 mA in table 5; updated switching times and related test conditions
2.14
2021-10-26
Replaced IGSS specification with VGS, clamp in table 5
Other Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
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© 2021 Infineon Technologies AG
All Rights Reserved.
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For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office (www.infineon.com).
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Due to technical requirements, components may contain dangerous substances. For information on the types in question,
please contact the nearest Infineon Technologies Office.
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Final Data Sheet
16
Rev. 2.14
2021-10-26
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