IGT60R190D1SATMA1

IGT60R190D1S IGT60R190D1S 600V CoolGaN™ enhancement-mode Power Transistor Features  Enhancement mode transistor – Normally OFF switch  Ultra fast switching  No reverse-recovery charge G  Capable of reverse conduction G SK  Low gate charge, low output charge  Superior commutation ruggedness  Qualified for standard grade applications according to JEDEC standards 1 1 1 1 SK SK G Benefits  Improves system efficiency  Improves power density  Enables higher operating frequency  System cost reduction savings Gate 8 Drain drain contact Kelvin Source 7 Source 1,2,3,4,5,6  Reduces EMI Applications Consumer SMPS and high density chargers based on the half-bridge topology (half-bridge topologies for hard and soft switching such as Totem pole PFC, high frequency LLC and flyback). For other applications: review CoolGaN™ reliability white paper and contact Infineon regional support Table 1 Key Performance Parameters at TJ = 25 °C Parameter VDS,max RDS(on),max QG,typ ID,pulse Qoss @ 400 V Qrr Table 2 Value 600 190 3.2 23 16 0 Ordering Information Type / Ordering Code IGT60R190D1S Final Data Sheet Unit V mΩ nC A nC nC www.infineon.com Package Marking Related links PG-HSOF-8-3 60S190D1 see Appendix A Please read the Important Notice and Warnings at the end of this document Rev. 3.12 2020-05-29 IGT60R190D1S 600V CoolGaN™ enhancement-mode Power Transistor Table of Contents Features .................................................................................................................................... 1 Benefits .................................................................................................................................... 1 Applications ................................................................................................................................... 1 Table of Contents ........................................................................................................................... 2 1 Maximum ratings ........................................................................................................... 3 2 Thermal characteristics .................................................................................................. 4 3 Electrical characteristics ................................................................................................ 5 4 Electrical characteristics diagrams .................................................................................. 7 5 Test Circuits ................................................................................................................. 13 6 Package Outlines .......................................................................................................... 14 7 Appendix A ................................................................................................................... 15 8 Revision History ........................................................................................................... 16 Final Data Sheet 2 Rev. 3.12 2020-05-29 IGT60R190D1S 600V CoolGaN™ enhancement-mode Power Transistor 1 Maximum ratings at Tj = 25 °C, unless otherwise specified. Continuous application of maximum ratings can deteriorate transistor lifetime. For further information, contact your local Infineon sales office. Table 3 Maximum ratings Parameter Symbol Values Unit Min. Typ. Max. Note/Test Condition Drain Source Voltage, continuous 1 VDS,max - - 600 V VGS = 0 V Drain source destructive breakdown voltage 2 VDS,bd 800 - - V VGS = 0 V, IDS = 4.3 mA Drain source voltage, pulsed 2 VDS,pulse - - 750 V - - 650 V Tj = 25 °C; VGS ≤ 0 V; ≤1 hour of total time Tj = 125 °C, VGS ≤ 0 V; ≤1 hour of total time Switching surge voltage, pulsed 2 VDS,surge - - 750 V DC bus voltage = 700 V; turn off VDS,pulse = 750 V; turn on ID,pulse = 10 A; Tj = 105 °C; f ≤ 100 kHz, t ≤ 100 secs (10 million pulses) Continuous current, drain source ID - - 12.5 8.0 5.5 A TC = 25 °C; Tj = Tj, max TC = 100 °C; Tj = Tj, max TC = 125 °C; Tj = Tj, max Pulsed current, drain source 34 ID,pulse - - 23 A TC = 25 °C; IG = 9.6 mA; See Figure 3; Figure 5; Pulsed current, drain source 45 ID,pulse - - 13.5 A TC = 125 °C; IG = 9.6 mA; See Figure 4; Figure 6; IG,avg - - 7.7 mA Tj = -55 °C to 150 °C; Gate current, pulsed 4 6 IG,pulse - - 770 mA Tj = -55 °C to 150 °C; tPULSE = 50 ns, f=100 kHz Gate source voltage, continuous 6 VGS -10 - - V Tj = -55 °C to 150 °C; Gate source voltage, pulsed 6 VGS,pulse -25 - - V Tj = -55 °C to 150 °C; tPULSE = 50 ns, f = 100 kHz; open drain Power dissipation Ptot - - 55.5 W TC = 25 °C Operating temperature Tj -55 - 150 °C Gate current, continuous 4 56 All devices are 100% tested at IDS = 4.3 mA to assure VDS ≥ 800 V Provided as measure of robustness under abnormal operating conditions and not recommended for normal operation 3 Limits derived from product characterization, parameter not measured during production 4 Ensure that average gate drive current, IG,avg is ≤ 7.7 mA. Please see figure 27 for IG,avg, IG,pulse and IG details 5 Parameter is influenced by rel-requirements. Please contact the local Infineon Sales Office to get an assessment of your application 6 We recommend using an advanced driving technique to optimize the device performance. Please see gate drive application note for details Final Data Sheet 3 Rev. 3.12 2020-05-29 1 2 IGT60R190D1S 600V CoolGaN™ enhancement-mode Power Transistor Storage temperature Tstg Drain-source voltage slew-rate dV/dt 2 -55 - 150 °C 200 V/ns Max shelf life depends on storage conditions. Thermal characteristics Table 4 Thermal characteristics Parameter Symbol Values Unit Min. Typ. Max. Thermal resistance, junction-case RthJC - - 2.25 Thermal resistance, junction-ambient RthJA - - 62 Thermal resistance, junction-ambient for SMD version RthJA - 35 45 Reflow soldering temperature Tsold - - 260 Final Data Sheet 4 Note/Test Condition °C/W °C/W Device on PCB, minimum footprint °C/W Device on 40mm*40mm* 1.5mm epoxy PCB FR4 with 6cm² (one layer, 70μm thickness) copper area for drain connection and cooling. PCB is vertical without air stream cooling. °C MSL1 Rev. 3.12 2020-05-29 IGT60R190D1S 600V CoolGaN™ enhancement-mode Power Transistor 3 Electrical characteristics at Tj = 25 °C, unless specified otherwise Table 5 Static characteristics Parameter Symbol Values Min. Typ. Gate threshold voltage Drain-Source leakage current VGS(th) IDSS Drain-Source leakage current at IDSSapp application conditions1 Gate-Source leakage current IGSS Drain-Source on-state resistance Gate resistance Table 6 RDS(on) RG,int Unit Note/Test Condition Max. 0.9 0.7 1.2 1.0 1.6 1.4 V IDS = 0.96 mA; VDS = 10 V; Tj =25 °C IDS = 0.96 mA; VDS = 10 V; Tj =125 °C - 0.4 8 40 - µA VDS = 600 V; VGS = 0 V; Tj = 25 °C VDS = 600 V; VGS = 0 V; Tj = 150 °C - 0.3 - µA VDS = 400 V; VGS = 0 V; Tj = 125 °C -1 -1 - - mA VDS = 0 V; VGS = -10 V; Tj = 25 °C VDS = 0 V; VGS = -10 V; Tj = 125 °C - 0.14 0.26 0.19 - Ω IG = 9.6 mA; ID = 5 A; Tj = 25 °C IG = 9.6 mA; ID = 5 A; Tj = 150 °C - 0.27 - Ω LCR impedance measurement; f = fres Dynamic characteristics Parameter Symbol Values Min. Typ. Unit Note/Test Condition Max. Input capacitance Ciss - 157 - pF VGS = 0 V; VDS = 400 V; f = 1 MHz Output capacitance Coss - 28 - pF VGS = 0 V; VDS = 400 V; f = 1 MHz Reverse transfer capacitance Crss - 0.15 - pF VGS = 0 V; VDS = 400 V; f = 1 MHz Effective output capacitance, energy related 2 Co(er) - 32.5 - pF VDS = 0 to 400 V Effective output capacitance, time related 3 Co(tr) - 40 - pF VGS = 0 V; VDS = 0 to 400 V; Id = const Output charge Qoss - 16 - nC VDS = 0 to 400 V Turn- on delay time td(on) - 11 - ns see Figure 23 Turn- off delay time td(off) - 12 - ns see Figure 23 Rise time tr - 5 - ns see Figure 23 Fall time tf - 12 - ns see Figure 23 1 2 3 Parameter represents end of use leakage in applications Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 400 V Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 400 V Final Data Sheet 5 Rev. 3.12 2020-05-29 IGT60R190D1S 600V CoolGaN™ enhancement-mode Power Transistor Table 7 Gate charge characteristics Parameter Symbol Values Min. Typ. Gate charge Table 8 QG 3.2 - Unit Note/Test Condition Max. - nC IGS = 0 to 3.8 mA; VDS= 400 V; ID= 5 A Reverse conduction characteristics Parameter Symbol Values Min. Typ. Unit Note/Test Condition Max. Source-Drain reverse voltage VSD - 2.5 3 V VGS = 0V; ISD = 5 A Pulsed current, reverse IS,pulse - - 23 A IG = 9.6 mA Reverse recovery charge Qrr 1 - 0 - nC ISD = 5 A, VDS = 400V Reverse recovery time trr - 0 - ns Peak reverse recovery current Irrm - 0 - A 1 Excluding Qoss Final Data Sheet 6 Rev. 3.12 2020-05-29 IGT60R190D1S 600V CoolGaN™ enhancement-mode Power Transistor 4 Electrical characteristics diagrams at Tj = 25 °C, unless specified otherwise Power dissipation Figure 1 Max. transient thermal impedance Figure 2 60 10 50 1 ZthJC [K/W] Ptot [W] 40 30 20 D= 0.5 0.2 0.1 0.05 0.02 0.01 single pulse 0.1 10 0 0 20 40 60 80 100 120 140 0.01 1E-6 160 1E-4 1E-2 TC [oC] Ptot=f(Tc) 1E+2 ZthJC=f(tp, D) Safe operating area Figure 3 Safe operating area Figure 4 100 100 tp = 20 ns tp = 100 μs 10 DC tp = 1 ms 10 tp = 10 μs ID [A] Limited by RDS(on) 1 0.1 1 tp = 20 ns tp = 100 μs tp = 1 ms ID [A] 1E+0 tp [s] Limited by RDS(on) tp = 10 μs DC 0.1 0.01 0.01 1 10 100 1000 1 VDS [V] 10 100 1000 VDS [V] ID=f(VDS); TC = 25 °C ID=f(VDS); TC = 125 °C Final Data Sheet 7 Rev. 3.12 2020-05-29 IGT60R190D1S 600V CoolGaN™ enhancement-mode Power Transistor Repetitive safe operating area1 Figure 5 Repetitive safe operating area1 Figure 6 25 25 20 20 tp ≤ 20ns Limited by RDS(on) ID [A] 15 ID [A] 15 10 tp ≤ 20ns 10 Limited by RDS(on) 5 5 0 0 0 100 200 300 400 500 600 0 100 200 300 VDS [V] Tc = 25 °C; Tj ≤ 150 °C 500 600 Tc = 125 °C; Tj ≤ 150 °C Typ. output characteristics Figure 7 400 VDS [V] Typ. output characteristics Figure 8 35 35 IG=9.6 mA IG=3 mA 30 30 IG=0.96 mA 25 IG=9.6 mA IG=0.096 mA 20 ID [A] 20 ID [A] 25 IG=0.3 mA IG=0.01 mA 15 15 10 10 5 5 0 IG=3 mA IG=0.96 mA IG=0.3 mA IG=0.096 mA IG=0.01 mA 0 0 2 4 6 8 10 0 2 VDS [V] ID=f(VDS,IGS); TJ = 25 °C 4 6 8 10 VDS [V] ID=f(VDS,IGS); TJ = 125 °C Parameter is influenced by rel-requirements. This value is determined by a typical lifetime-model for consumer applications. Please contact the local Infineon Sales Office to get an assessment of your application. Final Data Sheet 8 Rev. 3.12 2020-05-29 1 IGT60R190D1S 600V CoolGaN™ enhancement-mode Power Transistor Typ. Drain-source on-state resistance Figure 9 Figure 10 Typ. Drain-source on-state resistance 320 500 IG=0.096 mA IG=0.3 mA 450 280 240 IG=3 mA 400 IG=9.6 mA VGS = 3 V RDS(on) [mΩ] RDS(on) (mΩ) IG=0.96 mA 350 300 200 IG = 9.6 mA 160 120 250 80 200 -50 0 5 10 15 20 0 25 ID [A] RDS(on)=f(ID,IG); Tj = 125 °C 100 150 RDS(on)=f(Tj); ID = 5 A Typ. gate characteristics forward Figure 11 50 Tj [oC] Figure 12 Typ. gate characteristics reverse VGS (V) 300 -25 -20 -15 -10 -5 0 0 250 -50 125 oC -100 -150 150 25 oC -200 100 IGS (mA) IGS [mA] 200 -250 50 -300 -55 oC 0 0 1 2 3 4 -350 VGS [V] IGS=f(VGS,Tj); open drain IGS=f(VGS); Tj = 25 °C Final Data Sheet 9 Rev. 3.12 2020-05-29 IGT60R190D1S 600V CoolGaN™ enhancement-mode Power Transistor Typ. transfer characteristics Figure 13 Typ. transfer characteristics Figure 14 30 30 20 20 25 25 15 15 ID (A) IG (mA) 10 15 10 10 10 5 5 5 5 0 0 0 0 1 2 3 4 0 0 5 1 2 ID, IG =f(VGS); VDS = 8 V; Tj = 25 °C ID, IG =f(VGS); VDS = 8 V ; Tj = 125 °C Typ. channel reverse characteristics -8 -6 VDS (V) -4 -2 Figure 16 -10 0 -9 Typ. channel reverse characteristics -8 -7 -6 VDS=f(ID, VGS); Tj = 25 °C Final Data Sheet -3V -2V -1V 0V VGS -5 -4 -3 -2 -1 0 0 -1 -1 -2 -2 -3 -3 -4 -4 -5 -6 -6 -4V VDS (V) 0 -5 -5V 5 ID (A) -10 4 VGS (V) VGS (V) Figure 15 3 ID (A) ID (A) 15 IG (mA) 20 20 -5V -4V -3V -2V -1V 0V VGS -7 -7 -8 -8 -9 -9 -10 -10 VDS=f(ID, VGS); Tj = 125 °C 10 Rev. 3.12 2020-05-29 IGT60R190D1S 600V CoolGaN™ enhancement-mode Power Transistor Typ. channel reverse characteristics Figure 17 10 10 9 9 +4V 8 7 7 6 6 ISD [A] ISD [A] 8 Typ. channel reverse characteristics Figure 18 5 0V 4 5 0V 4 3 3 2 2 1 1 0 +4V 0 0 1 2 3 4 0 1 2 VSD [V] ID=f(VDS, VGS); Tj = 25 °C 4 5 ID=f(VDS, VGS); Tj = 125 °C Typ. gate charge Figure 19 3 VSD [V] Typ. capacitances Figure 20 3.0 1000.0 Ciss 2.5 100.0 C [pF] VGS [V] 2.0 1.5 Coss 10.0 1.0 1.0 0.5 Crss 0.0 0.1 0 1 2 3 0 QG [nC] VGS = f(QG); VDCLINK = 400 V; ID = 5 A Final Data Sheet 200 400 600 VDS [V] CxSS = f(VDS) 11 Rev. 3.12 2020-05-29 IGT60R190D1S 600V CoolGaN™ enhancement-mode Power Transistor Typ. output charge Figure 21 Typ. Coss stored Energy Figure 22 25 6 5 20 4 EOSS [μJ] QOSS [nC] 15 10 3 2 5 1 0 0 0 200 400 0 600 VDS [V] QOSS = f(VDS) Final Data Sheet 200 400 600 VDS [V] EOSS = f(VDS) 12 Rev. 3.12 2020-05-29 IGT60R190D1S 600V CoolGaN™ enhancement-mode Power Transistor 5 Figure 23 Test Circuits Switching times with inductive load Figure 24 Switching times waveform D T1 RSS RON CG L G ROFF + S ID RSS CG T2 VDS RON D 400V SK G t SK ROFF S ID=5 A, RON=15 Ω; ROFF=4.7 Ω; RSS=1500 Ω; CG=0.68 nF; VDRV = 12 V Figure 25 Reverse Channel Characteristics Test Figure 26 Typical Reverse Channel Recovery D T1 RSS RON CG L G ROFF + S ID RSS CG T2 VDS RON D 400V SK G SK ROFF S ID=5 A, RON=15 Ω; ROFF=4.7 Ω; RSS=1500 Ω; CG=0.68 nF; VDRV = 12 V Figure 27 The recovery charge is QOSS only, no additional Qrr Gate current switching waveform IG,pulse IG IG, avg t Final Data Sheet 13 Rev. 3.12 2020-05-29 IGT60R190D1S 600V CoolGaN™ enhancement-mode Power Transistor 6 Package Outlines Figure 28 PG-HSOF-8-3 Package Outline, dimensions (mm) Final Data Sheet 14 Rev. 3.12 2020-05-29 IGT60R190D1S 600V CoolGaN™ enhancement-mode Power Transistor 7 Appendix A Table 9     Related links IFX CoolGaNTM webpage: www.infineon.com/why-coolgan IFX CoolGaNTM reliability white paper: www.infineon.com/gan-reliability IFX CoolGaNTM gate drive application note: www.infineon.com/driving-coolgan IFX CoolGaNTM applications information: o www.infineon.com/gan-in-server-telecom o www.infineon.com/gan-in-wirelesscharging o www.infineon.com/gan-in-audio o www.infineon.com/gan-in-adapter-charger Final Data Sheet 15 Rev. 3.12 2020-05-29 IGT60R190D1S 600V CoolGaN™ enhancement-mode Power Transistor 8 Revision History Major changes since the last revision Revision Date Description of change 3.0 2017-04-25 Release of final version 3.1 2018-10-12 Updated application section; added Appendix A and Fig. 27; updated maximum rating table footnotes, switching times and figures. 3.11 2020-01-16 Added VDS,bd, VDS,pulse , VDS,surge specifications in maximum ratings table of page3 3.12 2020-05-29 Updated to MSL1 in table 4 Final Data Sheet 16 Rev. 3.12 2020-05-29 Trademarks of Infineon Technologies AG µHVIC™, µIPM™, µPFC™, AU-ConvertIR™, AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™, CoolSiC™, DAVE™, DI-POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, GaNpowIR™, HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OPTIGA™, OptiMOS™, ORIGA™, PowIRaudio™, PowIRStage™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, SmartLEWIS™, SOLID FLASH™, SPOC™, StrongIRFET™, SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™ Trademarks updated November 2015 Other Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2020-05-29 Published by Infineon Technologies AG 81726 München, Germany © 2020 Infineon Technologies AG. All Rights Reserved. Do you have a question about this document? Email: erratum@infineon.com Document reference ifx1 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 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