IGU04N60TAKMA1

TRENCHSTOP™ Series Low Loss IGBT : IGU04N60T q IGBT in TRENCHSTOP™ technology C G          Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time 5s Designed for : - frequency inverters - drives TRENCHSTOP™ technology for 600V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed - low VCE(sat) Positive temperature coefficient in VCE(sat) Low EMI Low Gate Charge Qualified according to JEDEC1 for target applications Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type IGU04N60T E PG-TO251-3 VCE IC VCE(sat),Tj=25°C Tj,max Marking Package 600 V 4A 1.5 V 175 C G04T60 PG-TO251-3 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE 600 V DC collector current, limited by Tjmax TC = 25C TC = 100C IC 9.5 6.5 A Pulsed collector current, tp limited by Tjmax ICpul s 12 Turn off safe operating area (VCE  600V, Tj  175C) - 12 Gate-emitter voltage VGE 20 V tSC 5 s Power dissipation TC = 25C Ptot 42 W Operating junction temperature Tj -40...+175 C Storage temperature Tstg -55...+150 Soldering temperature, wave soldering, 1.6mm (0.063 in.) from case for 10s. Ts Short circuit withstand time Value Unit 2) VGE = 15V, VCC  400V, Tj  150C 260 C 1 J-STD-020 and JESD-022 Allowed number of short circuits: 1s. 1 IFAG IPC TD VLS 2) Rev. 2.1 17.02.2016 TRENCHSTOP™ Series IGU04N60T q Thermal Resistance Parameter Symbol Conditions Max. Value Unit RthJC 3.5 K/W RthJA 75 Characteristic IGBT thermal resistance, junction – case Thermal resistance, junction – ambient Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions Value min. Typ. max. 600 - - T j =2 5 C - 1.5 2.05 T j =1 7 5 C - 1.9 - 4.1 4.9 5.7 Unit Static Characteristic Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0V , I C = 0 .2m A Collector-emitter saturation voltage VCE(sat) V V G E = 15 V , I C = 4 A Gate-emitter threshold voltage VGE(th) I C = 6 0µ A ,V C E = V G E Zero gate voltage collector current ICES V C E = 60 0 V , V G E = 0V µA T j =2 5 C - - 40 T j =1 7 5 C - 40 - Gate-emitter leakage current IGES V C E = 0V , V G E =2 0 V - - 100 nA Transconductance gfs V C E = 20 V , I C = 4 A - 2.2 - S Input capacitance Ciss V C E = 25 V , - 252 - pF Output capacitance Coss V G E = 0V , - 20 - Reverse transfer capacitance Crss f= 1 MH z - 7.5 - Gate charge QGate V C C = 48 0 V, I C =4 A - 27 - nC - 7 - nH - 36 - A Dynamic Characteristic V G E = 15 V LE Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current 1) IC(SC) V G E = 15 V ,t S C  5 s V C C = 4 0 0 V, T j  150C 1) Allowed number of short circuits: 1s. 2 IFAG IPC TD VLS Rev. 2.1 17.02.2016 TRENCHSTOP™ Series IGU04N60T q Switching Characteristic, Inductive Load, at Tj=25 C Parameter Symbol Conditions Value min. Typ. max. - 14 - - 7 - - 164 - - 43 - - 61 - - 84 - - 145 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets T j=25 C, VCC=400V,IC=4A, VGE=0/15V, rG=47 , L =150nH, C=47pF L , C f rom Fig. E Energy losses include “tail” and diode reverse recovery. ns µJ Switching Characteristic, Inductive Load, at Tj=175 C Parameter Symbol Conditions Value min. Typ. max. - 14 - - 10 - - 185 - - 83 - - 99 - - 97 - - 196 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets IFAG IPC TD VLS T j=175 C, VCC=400V,IC=4A, VGE=0/15V, rG=47 , L =150nH, C=47pF L , C f rom Fig. E Energy losses include “tail” and diode reverse recovery. 3 ns µJ Rev. 2.1 17.02.2016 TRENCHSTOP™ Series t p =2µs 10A 12A 10A IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT IGU04N60T q T C =80°C 8A T C =110°C 6A 4A Ic 2A 10µs 1A 50µs 1ms 0.1A Ic DC 10ms 0A 10Hz 100Hz 1kHz 10kHz 1V 100kHz f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj  175C, D = 0.5, VCE = 400V, VGE = 0/15V, rG = 47) 1000V 8A IC, COLLECTOR CURRENT Ptot, POWER DISSIPATION 100V VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 175C; VGE=0/15V) 40W 30W 20W 10W 0W 25°C 10V 6A 4A 2A 50°C 75°C 0A 25°C 100°C 125°C 150°C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj  175C) IFAG IPC TD VLS 75°C 125°C TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE  15V, Tj  175C) 4 Rev. 2.1 17.02.2016 TRENCHSTOP™ Series 8A 10A V G E =20V IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 10A 15V 13V 6A 11V 9V 4A 7V 2A V G E =20V 8A 15V 13V 6A 11V 9V 4A 7V 2A 0A 0A 0V 1V 2V 3V 0V 8A 6A 4A 2A T J =175°C 25°C 0A 0V 2V 4V 6V 2V 2.5V 3V IC =8A 2.0V 1.5V I C =4A 1.0V IC =2A 0.5V 0.0V 0°C 8V VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=20V) IFAG IPC TD VLS 1V VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 175°C) VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25°C) IC, COLLECTOR CURRENT IGU04N60T q 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) 5 Rev. 2.1 17.02.2016 TRENCHSTOP™ Series IGU04N60T q t d(off) t d(off) tf t d(on) 10ns t, SWITCHING TIMES t, SWITCHING TIMES 100ns tr 100ns tf t d(on) 10ns tr 1ns 0A 2A 4A  6A IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=175°C, VCE = 400V, VGE = 0/15V, rG = 47Ω, Dynamic test circuit in Figure E)     RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ = 175°C, VCE= 400V, VGE = 0/15V, IC = 4A, Dynamic test circuit in Figure E) t d(off) 100ns t, SWITCHING TIMES tf t d(on) 10ns tr 25°C 50°C 75°C 6V m ax. typ. 5V 4V m in. 3V 2V 1V 0V -50°C 100°C 125°C 150°C TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 4A, rG=47Ω, Dynamic test circuit in Figure E) IFAG IPC TD VLS VGE(th), GATE-EMITT TRSHOLD VOLTAGE 7V 6 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 60 µA) Rev. 2.1 17.02.2016 TRENCHSTOP™ Series *) E on and E ts include losses *) E on and E ts include losses due to diode recovery E ts * 0.3m J E off 0.2m J E on * 0.1m J E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES due to diode recovery 0.4 m J E ts * 0.3 m J E off 0.2 m J E on * 0.1 m J 0.0 m J 0.0m J 0A 2A 4A   6A IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ = 175°C, VCE = 400V, VGE = 0/15V, rG = 47Ω, Dynamic test circuit in Figure E) E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES due to diode recovery E ts * 100µJ E off 75µJ 50µJ E on * 25µJ 0µJ 25°C 50°C 75°C 100°C 125°C 150°C TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 4A, rG = 47Ω, Dynamic test circuit in Figure E) IFAG IPC TD VLS    *) E on and E ts include losses 150µJ 125µJ  RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ = 175°C, VCE = 400V, VGE = 0/15V, IC = 4A, Dynamic test circuit in Figure E) *) E on and E ts include losses 175µJ IGU04N60T q 7 due to diode recovery 0.25m J 0.20m J E ts * 0.15m J 0.10m J E off 0.05m J E on * 0.00m J 300V 350V 400V 450V VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ = 175°C, VGE = 0/15V, IC = 4A, rG = 47Ω, Dynamic test circuit in Figure E) Rev. 2.1 17.02.2016 TRENCHSTOP™ Series IGU04N60T q 15V 120V c, CAPACITANCE VGE, GATE-EMITTER VOLTAGE C iss 480V 10V 100pF C oss 5V 10pF C rss 0V 0nC 5nC 0V 10nC 15nC 20nC 25nC 30nC VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz) 12µs 60A tSC, SHORT CIRCUIT WITHSTAND TIME IC(sc), SHORT CIRCUIT COLLECTOR CURRENT QGE, GATE CHARGE Figure 17. Typical gate charge (IC=4 A) 10V 20V 30V 40V 50V 60V 70V 50A 40A 30A 20A 10A 0A 12V 14V 16V 8µs 6µs 4µs 2µs 0µs 10V 18V VGE, GATE-EMITTER VOLTAGE Figure 19. Typical short circuit collector current as a function of gate-emitter voltage (VCE  400V, Tj  150C) IFAG IPC TD VLS 10µs 8 11V 12V 13V 14V VGE, GATE-EMITTER VOLTAGE Figure 20. Short circuit withstand time as a function of gate-emitter voltage (VCE=400V, start at Tj=25°C, Tj,max