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IGW100N60H3FKSA1

IGW100N60H3FKSA1

  • 厂商:

    EUPEC(英飞凌)

  • 封装:

    TO247

  • 描述:

    IGBT Trench Field Stop 600V 140A 714W Through Hole PG-TO247-3

  • 数据手册
  • 价格&库存
IGW100N60H3FKSA1 数据手册
IGBT HighspeedIGBTinTrenchandFieldstoptechnology IGW100N60H3 600Vhighspeedswitchingseriesthirdgeneration Datasheet IndustrialPowerControl IGW100N60H3 Highspeedswitchingseriesthirdgeneration HighspeedIGBTinTrenchandFieldstoptechnology  Features: C TRENCHSTOPTMtechnologyoffering •verylowturn-offenergy •lowVCEsat •lowEMI •maximumjunctiontemperature175°C •qualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating,halogen-freemouldcompound,RoHS compliant •completeproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ G E Applications: •uninterruptiblepowersupplies •weldingconverters •converterswithhighswitchingfrequency 1 Packagepindefinition: 2 3 •Pin1-gate •Pin2&backside-collector •Pin3-emitter KeyPerformanceandPackageParameters Type IGW100N60H3 VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package 600V 100A 1.85V 175°C G100H603 PG-TO247-pin123 2 Rev.1.2,2013-02-07 IGW100N60H3 Highspeedswitchingseriesthirdgeneration TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 3 Rev.1.2,2013-02-07 IGW100N60H3 Highspeedswitchingseriesthirdgeneration Maximumratings Parameter Symbol Value Unit 600 V IC 140.0 120.0 A ICpuls 300.0 A TurnoffsafeoperatingareaVCE≤600V,Tvj≤175°C  - 300.0 A Gate-emitter voltage VGE ±20 V Short circuit withstand time VGE=15.0V,VCC≤400V Allowed number of short circuits < 1000 Time between short circuits: ≥ 1.0s Tvj=150°C tSC PowerdissipationTC=25°C Ptot 714.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C VCE Collector-emitter voltage 1) vjmax DCcollectorcurrent,limitedbyT  TC=25°Cvaluelimitedbybondwire TC=100°C Pulsedcollectorcurrent,tplimitedbyTvjmax2) 3) µs 5 Soldering temperature, wave soldering 1.6 mm (0.063 in.) from case for 10s °C 260 Mounting torque, M3 screw Maximum of mounting processes: 3 M 0.6 Nm ThermalResistance Parameter Characteristic Symbol Conditions Max.Value Unit IGBT thermal resistance,4) junction - case Rth(j-c) 0.21 K/W Thermal resistance junction - ambient Rth(j-a) 40 K/W ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value min. typ. max. 600 - - - 1.85 2.10 2.25 2.30 - 4.1 5.1 5.7 Unit StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=2.00mA Collector-emitter saturation voltage VCEsat VGE=15.0V,IC=100.0A Tvj=25°C Tvj=125°C Tvj=175°C V V Gate-emitter threshold voltage VGE(th) IC=1.60mA,VCE=VGE Zero gate voltage collector current ICES VCE=600V,VGE=0V Tvj=25°C Tvj=175°C - - Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=100.0A - 50.0 - S V 40.0 µA 6700.0 1) For maximal distance of 5mm between soldering point and mould Additionally tp
IGW100N60H3FKSA1 价格&库存

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