IGW25N120H3FKSA1

IGBT HighspeedIGBTinTrenchandFieldstoptechnology recommendedincombinationwithSiCDiodeIDH15S120 IGW25N120H3 1200Vhighspeedswitchingseriesthirdgeneration Datasheet IndustrialPowerControl IGW25N120H3 Highspeedswitchingseriesthirdgeneration HighspeedIGBTinTrenchandFieldstoptechnology recommendedincombinationwithSiCDiodeIDH15S120  Features: C TRENCHSTOPTMtechnologyoffering •bestinclassswitchingperformance:lessthan500µJtotal switchinglossesachievable •verylowVCEsat •lowEMI •maximumjunctiontemperature175°C •qualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •completeproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ G E Applications: •solarinverters •uninterruptiblepowersupplies •weldingconverters •converterswithhighswitchingfrequency 1 2 3 Packagepindefinition: •Pin1-gate •Pin2&backside-collector •Pin3-emitter KeyPerformanceandPackageParameters Type IGW25N120H3 VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package 1200V 25A 2.05V 175°C G25H1203 PG-TO247-3 2 Rev.2.1,2014-02-27 IGW25N120H3 Highspeedswitchingseriesthirdgeneration TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 3 Rev.2.1,2014-02-27 IGW25N120H3 Highspeedswitchingseriesthirdgeneration Maximumratings Parameter Symbol Value Unit Collector-emitter voltage VCE 1200 V DCcollectorcurrent,limitedbyTvjmax TC=25°C TC=100°C IC 50.0 25.0 A Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 100.0 A TurnoffsafeoperatingareaVCE≤1200V,Tvj≤175°C - 100.0 A Gate-emitter voltage VGE ±20 V Short circuit withstand time VGE=15.0V,VCC≤600V Allowed number of short circuits < 1000 Time between short circuits: ≥ 1.0s Tvj=175°C tSC PowerdissipationTC=25°C PowerdissipationTC=100°C Ptot 326.0 156.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C µs 10 Soldering temperature, wave soldering 1.6 mm (0.063 in.) from case for 10s °C 260 Mounting torque, M3 screw Maximum of mounting processes: 3 M 0.6 Nm ThermalResistance Parameter Characteristic Symbol Conditions Max.Value Unit IGBT thermal resistance, junction - case Rth(j-c) 0.46 K/W Thermal resistance junction - ambient Rth(j-a) 40 K/W ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. 1200 - - Collector-emitter saturation voltage VCEsat VGE=15.0V,IC=25.0A Tvj=25°C Tvj=125°C Tvj=175°C - 2.05 2.50 2.70 2.40 - Gate-emitter threshold voltage VGE(th) IC=0.85mA,VCE=VGE 5.0 5.8 6.5 Zero gate voltage collector current ICES VCE=1200V,VGE=0V Tvj=25°C Tvj=175°C - - Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 600 nA Transconductance gfs VCE=20V,IC=25.0A - 13.0 - S StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.50mA 4 V V V 250.0 µA 2500.0 Rev.2.1,2014-02-27 IGW25N120H3 Highspeedswitchingseriesthirdgeneration ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. - 1430 - - 95 - - 75 - VCC=960V,IC=25.0A, VGE=15V - 115.0 - nC VGE=15.0V,VCC≤600V, tSC≤10µs Tvj=175°C - - A DynamicCharacteristic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG Short circuit collector current Max. 1000 short circuits IC(SC) Time between short circuits: ≥ 1.0s VCE=25V,VGE=0V,f=1MHz pF 87 SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. Tvj=25°C, VCC=600V,IC=25.0A, VGE=0.0/15.0V, rG=23.0Ω,Lσ=80nH, Cσ=67pF Lσ,CσfromFig.E Energy losses include “tail” and diode (IKW25N120H3) reverse recovery. - 27 - ns - 41 - ns - 277 - ns - 17 - ns - 1.80 - mJ - 0.85 - mJ - 2.65 - mJ Tvj=25°C, VCC=800V,IC=10.0A, VGE=0.0/15.0V, rG=3.0Ω,Lσ=80nH, Cσ=67pF Lσ,CσfromFig.E Energy losses include “tail” and diode (IDH15S120) reverse recovery. - 0.08 - mJ - 0.27 - mJ - 0.35 - mJ IGBTCharacteristic,atTvj=25°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets 5 Rev.2.1,2014-02-27 IGW25N120H3 Highspeedswitchingseriesthirdgeneration SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. Tvj=175°C, VCC=600V,IC=25.0A, VGE=0.0/15.0V, rG=23.0Ω,Lσ=80nH, Cσ=67pF Lσ,CσfromFig.E Energy losses include “tail” and diode (IKW25N120H3) reverse recovery. - 26 - ns - 35 - ns - 347 - ns - 50 - ns - 2.60 - mJ - 1.70 - mJ - 4.30 - mJ Tvj=175°C, VCC=800V,IC=10.0A, VGE=0.0/15.0V, rG=3.0Ω,Lσ=80nH, Cσ=67pF Lσ,CσfromFig.E Energy losses include “tail” and diode (IDH15S120) reverse recovery. - 0.10 - mJ - 0.62 - mJ - 0.72 - mJ IGBTCharacteristic,atTvj=175°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets 6 Rev.2.1,2014-02-27 IGW25N120H3 Highspeedswitchingseriesthirdgeneration 110 100 100 IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 90 80 70 60 50 40 TC=80° 30 tp=1µs 10µs 10 50µs 100µs 200µs 500µs 1 DC TC=110° 20 TC=80° 10 0 TC=110° 1 10 100 0.1 1000 1 f,SWITCHINGFREQUENCY[kHz] 10 100 1000 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 1. Collectorcurrentasafunctionofswitching frequency (Tj≤175°C,D=0.5,VCE=600V,VGE=15/0V, rG=23Ω) Figure 2. Forwardbiassafeoperatingarea (D=0,TC=25°C,Tj≤175°C;VGE=15V) 350 50 300 IC,COLLECTORCURRENT[A] Ptot,POWERDISSIPATION[W] 40 250 200 150 100 30 20 10 50 0 25 50 75 100 125 150 0 175 TC,CASETEMPERATURE[°C] 25 50 75 100 125 150 175 TC,CASETEMPERATURE[°C] Figure 3. Powerdissipationasafunctionofcase temperature (Tj≤175°C) Figure 4. Collectorcurrentasafunctionofcase temperature (VGE≥15V,Tj≤175°C) 7 Rev.2.1,2014-02-27 IGW25N120H3 Highspeedswitchingseriesthirdgeneration 100 100 90 VGE=20V 17V 15V 70 13V 60 11V 50 9V 7V 40 17V 80 IC,COLLECTORCURRENT[A] 80 IC,COLLECTORCURRENT[A] VGE=20V 5V 30 20 15V 13V 60 11V 9V 7V 40 5V 20 10 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 5. Typicaloutputcharacteristic (Tj=25°C) 6 8 5.0 VCE(sat),COLLECTOR-EMITTERSATURATION[V] Tj=25°C Tj=175°C 60 IC,COLLECTORCURRENT[A] 4 Figure 6. Typicaloutputcharacteristic (Tj=175°C) 75 45 30 15 0 2 VCE,COLLECTOR-EMITTERVOLTAGE[V] 5 10 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 15 VGE,GATE-EMITTERVOLTAGE[V] IC=12.5A IC=25A IC=50A 0 25 50 75 100 125 150 175 Tj,JUNCTIONTEMPERATURE[°C] Figure 7. Typicaltransfercharacteristic (VCE=20V) Figure 8. Typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature (VGE=15V) 8 Rev.2.1,2014-02-27 IGW25N120H3 Highspeedswitchingseriesthirdgeneration 1000 1000 td(off) tf td(on) tr t,SWITCHINGTIMES[ns] t,SWITCHINGTIMES[ns] td(off) tf td(on) tr 100 10 5 15 25 35 100 10 45 5 15 IC,COLLECTORCURRENT[A] Figure 9. Typicalswitchingtimesasafunctionof collectorcurrent (ind.load,Tj=175°C,VCE=600V,VGE=15/0V, rG=23Ω,testcircuitinFig.E) 45 55 65 7 VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V] td(off) tf td(on) tr t,SWITCHINGTIMES[ns] 35 Figure 10. Typicalswitchingtimesasafunctionofgate resistor (ind.load,Tj=175°C,VCE=600V,VGE=15/0V, IC=25A,testcircuitinFig.E) 1000 100 10 25 rG,GATERESISTOR[Ω] 0 25 50 75 100 125 150 typ. min. max. 6 5 4 3 2 175 Tj,JUNCTIONTEMPERATURE[°C] 0 25 50 75 100 125 150 175 Tj,JUNCTIONTEMPERATURE[°C] Figure 11. Typicalswitchingtimesasafunctionof junctiontemperature (ind.load,VCE=600V,VGE=15/0V,IC=25A, rG=23Ω,testcircuitinFig.E) Figure 12. Gate-emitterthresholdvoltageasafunction ofjunctiontemperature (IC=0.85mA) 9 Rev.2.1,2014-02-27 IGW25N120H3 Highspeedswitchingseriesthirdgeneration 12 7 8 6 4 2 0 Eoff Eon Ets 6 10 E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] Eoff Eon Ets 5 4 3 2 1 5 15 25 35 0 45 5 15 IC,COLLECTORCURRENT[A] 25 35 45 55 65 rG,GATERESISTOR[Ω] Figure 13. Typicalswitchingenergylossesasa functionofcollectorcurrent (ind.load,Tj=175°C,VCE=600V,VGE=15/0V, rG=23Ω,testcircuitinFig.E) Figure 14. Typicalswitchingenergylossesasa functionofgateresistor (ind.load,Tj=175°C,VCE=600V,VGE=15/0V, IC=25A,testcircuitinFig.E) 6 Eoff Eon Ets E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] 4 Eoff Eon Ets 3 2 1 0 0 25 50 75 100 125 150 5 4 3 2 1 0 400 175 Tj,JUNCTIONTEMPERATURE[°C] 500 600 700 800 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 15. Typicalswitchingenergylossesasa functionofjunctiontemperature (indload,VCE=600V,VGE=15/0V,IC=25A, rG=23Ω,testcircuitinFig.E) Figure 16. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (ind.load,Tj=175°C,VGE=15/0V,IC=25A, rG=23Ω,testcircuitinFig.E) 10 Rev.2.1,2014-02-27 IGW25N120H3 Highspeedswitchingseriesthirdgeneration 2.0 1.2 Eoff Eon Ets Eoff Eon Ets E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 1.0 0.8 0.6 0.4 0.2 0.2 0.0 0 5 10 15 20 0.0 25 0 5 IC,COLLECTORCURRENT[A] 10 15 rG,GATERESISTOR[Ω] 20 25 Figure 1. Typicalswitchingenergylossesasafunction Figure 2. Typicalswitchingenergylossesasafunction ofcollectorcurrent ofgateresistor (ind.load,Tj=125°C,VCE=800V,VGE=15/0V, (ind.load,Tj=125°C,VCE=800V,VGE=15/0V, IC=10A,DiodeIDH15S120) rG=3Ω,DiodeIDH15S120) 0.8 0.8 0.7 E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] Eoff Eon Ets 0.6 0.4 0.2 Eoff Eon Ets 0.6 0.5 0.4 0.3 0.2 0.1 0.0 25 50 75 100 0.0 400 125 Tj,JUNCTIONTEMPERATURE[°C] 500 600 700 800 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 3. Typicalswitchingenergylossesasafunction Figure 4. Typicalswitchingenergylossesasafunction ofjunctiontemperature ofcollectoremittervoltage (indload,VCE=800V,VGE=15/0V,IC=10A, (ind.load,Tj=125°C,VGE=15/0V,IC=10A, rG=3Ω,DiodeIDH15S120) rG=3Ω,DiodeIDH15S120) 10a Rev.2.1,2014-02-27 IGW25N120H3 Highspeedswitchingseriesthirdgeneration 16 240V 960V 14 12 C,CAPACITANCE[pF] VGE,GATE-EMITTERVOLTAGE[V] 1000 10 8 6 Cies Coes Cres 100 4 2 0 0 20 40 60 80 100 10 120 0 QGE,GATECHARGE[nC] Figure 17. Typicalgatecharge (IC=25A) 30 50 160 tSC,SHORTCIRCUITWITHSTANDTIME[µs] IC(SC),SHORTCIRCUITCOLLECTORCURRENT[A] 20 Figure 18. Typicalcapacitanceasafunctionof collector-emittervoltage (VGE=0V,f=1MHz) 180 140 120 100 80 60 40 20 10 VCE,COLLECTOR-EMITTERVOLTAGE[V] 10 12 14 16 40 30 20 10 0 18 VGE,GATE-EMITTERVOLTAGE[V] 10 12 14 16 18 20 VGE,GATE-EMITTERVOLTAGE[V] Figure 19. Typicalshortcircuitcollectorcurrentasa functionofgate-emittervoltage (VCE≤600V,startatTj=25°C) Figure 20. Shortcircuitwithstandtimeasafunctionof gate-emittervoltage (VCE≤600V,startatTj≤150°C) 11 Rev.2.1,2014-02-27 IGW25N120H3 Highspeedswitchingseriesthirdgeneration ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W] 1 D=0.5 0.2 0.1 0.1 0.05 0.02 0.01 single pulse 0.01 i: 1 2 3 4 5 ri[K/W]: 0.08133 0.09366 0.22305 0.05925 5.7E-3 τi[s]: 2.6E-4 1.7E-3 0.01009673 0.0336145 0.2730749 0.001 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 tp,PULSEWIDTH[s] Figure 21. IGBTtransientthermalimpedance (D=tp/T) 12 Rev.2.1,2014-02-27 IGW25N120H3 Highspeedswitchingseriesthirdgeneration PG-TO247-3 13 Rev.2.1,2014-02-27 IGW25N120H3 Highspeedswitchingseriesthirdgeneration vGE(t) 90% VGE a a b b t iC(t) 90% IC 90% IC 10% IC 10% IC t vCE(t) t td(off) tf td(on) t tr vGE(t) 90% VGE 10% VGE t iC(t) 2% IC t vCE(t) 2% VCE t1 t2 t3 t4 t 14 Rev.2.1,2014-02-27 IGW25N120H3 Highspeedswitchingseriesthirdgeneration RevisionHistory IGW25N120H3 Revision:2014-02-27,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 1.1 2011-12-12 Preliminary data sheet 2.1 2014-02-27 Final data sheet WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall? Yourfeedbackwillhelpustocontinuouslyimprovethequalityofthisdocument. Pleasesendyourproposal(includingareferencetothisdocument)to:erratum@infineon.com Publishedby InfineonTechnologiesAG 81726Munich,Germany 81726München,Germany ©2014InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics. Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingthe applicationofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind, includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandprices,pleasecontactthenearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesin question,pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystems and/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineon Technologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support, automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Life supportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustain and/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybe endangered. 15 Rev.2.1,2014-02-27