IGW25T120FKSA1

IGW25T120 ® TrenchStop Series Low Loss IGBT in TrenchStop® and Fieldstop technology C • • • • • • • • • Short circuit withstand time – 10µs Designed for : - Frequency Converters - Uninterrupted Power Supply ® TrenchStop and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat) Low EMI Low Gate Charge Qualified according to JEDEC1 for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type IGW25T120 G E PG-TO-247-3 VCE IC VCE(sat),Tj=25°C Tj,max Marking Package 1200V 25A 1.7V 150°C G25T120 PG-TO-247-3 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCE 1200 V DC collector current IC A TC = 25°C 50 TC = 100°C 25 Pulsed collector current, tp limited by Tjmax ICpuls 75 Turn off safe operating area - 75 VGE ±20 V tSC 10 µs Ptot 190 W Tj -40...+150 °C Storage temperature Tstg -55...+150 Soldering temperature, 1.6mm (0.063 in.) from case for 10s - VCE ≤ 1200V, Tj ≤ 150°C Gate-emitter voltage Short circuit withstand time 2) VGE = 15V, VCC ≤ 1200V, Tj ≤ 150°C Power dissipation TC = 25°C Operating junction temperature 1 2) 260 J-STD-020 and JESD-022 Allowed number of short circuits: 1s. Power Semiconductors 1 Rev. 2.4 Nov. 09 IGW25T120 ® TrenchStop Series Thermal Resistance Parameter Symbol Conditions Max. Value Unit RthJC 0.65 K/W RthJA 40 Characteristic IGBT thermal resistance, junction – case Thermal resistance, junction – ambient Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Value min. typ. max. 1200 - - T j = 25° C - 1.7 2.2 T j = 12 5° C - 2.0 - T j = 15 0° C - 2.2 - 5.0 5.8 6.5 Unit Static Characteristic Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0V, I C = 50 0µA Collector-emitter saturation voltage VCE(sat) V V G E = 15V, I C = 25A Gate-emitter threshold voltage VGE(th) I C = 1mA , VCE=VGE Zero gate voltage collector current ICES V C E = 1200V , V G E = 0V mA T j = 25° C - - 0.25 T j = 15 0° C - - 2.5 Gate-emitter leakage current IGES V C E = 0V ,V G E = 2 0V - - 600 nA Transconductance gfs V C E = 20V, I C = 25A - 16 - S Integrated gate resistor RGint 8 Ω Dynamic Characteristic Input capacitance pF Ciss V C E = 25V, Output capacitance Coss V G E = 0V, - 96 - Reverse transfer capacitance Crss f= 1 M Hz - 82 - Gate charge QGate V C C = 9 60V, I C = 25A - 155 - nC - 13 - nH - 150 - A - 1860 - V G E = 1 5V Internal emitter inductance LE measured 5mm (0.197 in.) from case Short circuit collector current1) 1) IC(SC) V G E = 1 5V,t S C ≤10µs V C C = 600V, T j = 25° C Allowed number of short circuits: 1s. Power Semiconductors 2 Rev. 2.4 Nov. 09 IGW25T120 ® TrenchStop Series Switching Characteristic, Inductive Load, at Tj=25 °C Parameter Symbol Conditions Value min. typ. max. Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets T j = 25° C, V C C = 6 00V, I C = 25A V G E = - 1 5/ 1 5V, R G = 2 2Ω , L σ 2 ) = 180nH, C σ 2 ) =39pF Energy losses include “tail” and diode reverse recovery. - 50 - - 30 - - 560 - - 70 - - 2.0 - - 2.2 - - 4.2 - ns mJ Switching Characteristic, Inductive Load, at Tj=150 °C Parameter Symbol Conditions Value min. typ. max. - 50 - - 32 - - 660 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets 2) T j = 15 0° C V C C = 6 00V, I C = 25A, V G E = - 1 5/ 1 5V, R G = 22Ω, 2) L σ = 180nH, C σ 2 ) =39pF Energy losses include “tail” and diode reverse recovery. - 130 - - 3.0 - - 4.0 - - 7.0 - ns mJ Leakage inductance L σ and Stray capacity C σ due to dynamic test circuit in Figure E. Power Semiconductors 3 Rev. 2.4 Nov. 09 IGW25T120 ® TrenchStop Series tp=3µs 60A TC=80°C IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 70A 50A 40A TC=110°C 30A 20A 10A 0A 10Hz Ic 10µs 10A 50µs 150µs 1A 500µs Ic 100Hz 20ms 1kHz 10kHz 0,1A 1V 100kHz f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj ≤ 150°C, D = 0.5, VCE = 600V, VGE = 0/+15V, RG = 22Ω) DC 10V 100V 1000V VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25°C, Tj ≤150°C;VGE=15V) IC, COLLECTOR CURRENT Ptot, POWER DISSIPATION 40A 150W 100W 50W 0W 25°C 50°C 75°C 100°C 20A 10A 0A 25°C 125°C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj ≤ 150°C) Power Semiconductors 30A 75°C 125°C TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE ≥ 15V, Tj ≤ 150°C) 4 Rev. 2.4 Nov. 09 IGW25T120 ® TrenchStop Series 70A 60A VGE=17V 50A 15V 40A 11V IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 60A 70A 13V 9V 30A 7V 20A 10A 15V 40A 11V 13V 9V 30A 7V 20A 0A 0V 1V 2V 3V 4V 5V 6V 0V 70A 60A 50A 40A 30A 20A TJ=150°C 25°C 10A 0V 2V 4V 6V 8V 10V 12V VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=20V) Power Semiconductors 1V 2V 3V 4V 5V 6V VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 150°C) VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25°C) IC, COLLECTOR CURRENT 50A 10A 0A 0A VGE=17V 3,0V IC=50A 2,5V 2,0V IC=25A 1,5V IC=15A IC=8A 1,0V 0,5V 0,0V -50°C 0°C 50°C 100°C TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) 5 Rev. 2.4 Nov. 09 IGW25T120 ® TrenchStop Series td(off) tf t, SWITCHING TIMES t, SWITCHING TIMES td(off) 100ns td(on) 10ns tf 100 ns td(on) tr 10 ns tr 1ns 0A 10A 20A 30A 1 ns 40A IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=150°C, VCE=600V, VGE=0/15V, RG=22Ω, Dynamic test circuit in Figure E) VGE(th), GATE-EMITT TRSHOLD VOLTAGE t, SWITCHING TIMES 100ns tf td(on) tr 0°C 50°C 100°C 25Ω 35Ω 45Ω 7V 6V max. 5V typ. 4V min. 3V 2V 1V 0V -50°C 150°C TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE=600V, VGE=0/15V, IC=25A, RG=22Ω, Dynamic test circuit in Figure E) Power Semiconductors 15Ω RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ=150°C, VCE=600V, VGE=0/15V, IC=25A, Dynamic test circuit in Figure E) td(off) 10ns 5Ω 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 1.0mA) 6 Rev. 2.4 Nov. 09 IGW25T120 ® TrenchStop Series E, SWITCHING ENERGY LOSSES 14,0mJ E, SWITCHING ENERGY LOSSES *) Eon and Ets include losses due to diode recovery *) Eon and Etsinclude losses due to diode recovery 12,0mJ 10,0mJ 8,0mJ 6,0mJ Ets* 4,0mJ Eoff 2,0mJ 8 mJ Ets* 6 mJ Eoff 4 mJ Eon* 2 mJ Eon* 0,0mJ 10A 20A 30A 0 mJ 40A IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ=150°C, VCE=600V, VGE=0/15V, RG=22Ω, Dynamic test circuit in Figure E) *) E on and E ts include losses due to diode recovery 10mJ 6mJ 5mJ 4mJ E ts * 3mJ E off 2mJ E on* 1mJ 0mJ 100°C 35Ω *) Eon and Ets include losses due to diode recovery 8mJ 7mJ 6mJ 5mJ 4mJ Ets* 3mJ 2mJ Eoff Eon* 0mJ 400V 150°C TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE=600V, VGE=0/15V, IC=25A, RG=22Ω, Dynamic test circuit in Figure E) Power Semiconductors 25Ω 9mJ 1mJ 50°C 15Ω RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ=150°C, VCE=600V, VGE=0/15V, IC=25A, Dynamic test circuit in Figure E) E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES 7mJ 5Ω 500V 600V 700V 800V VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ=150°C, VGE=0/15V, IC=25A, RG=22Ω, Dynamic test circuit in Figure E) 7 Rev. 2.4 Nov. 09 IGW25T120 ® TrenchStop Series 15V 240V c, CAPACITANCE VGE, GATE-EMITTER VOLTAGE Ciss 1nF 960V 10V Crss 5V 0V 0nC 50nC 100nC 150nC 10pF 200nC 15µs 10µs tSC, 5µs 0µs 12V 14V 10V 20V 200A 150A 100A 50A 0A 16V VGE, GATE-EMITTETR VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE=600V, start at TJ=25°C) Power Semiconductors 0V VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz) IC(sc), short circuit COLLECTOR CURRENT QGE, GATE CHARGE Figure 17. Typical gate charge (IC=25 A) SHORT CIRCUIT WITHSTAND TIME Coss 100pF 12V 14V 16V 18V VGE, GATE-EMITTETR VOLTAGE Figure 20. Typical short circuit collector current as a function of gateemitter voltage (VCE ≤ 600V, Tj ≤ 150°C) 8 Rev. 2.4 Nov. 09 IGW25T120 ® 600V VCE 60A 400V 40A 200V 0V 20A IC, COLLECTOR CURRENT VCE, COLLECTOR-EMITTER VOLTAGE TrenchStop Series 600V 40A 400V IC 200V 20A VCE IC 0.5us 0us 0A 0us 0A 1us 1.5us t, TIME Figure 21. Typical turn on behavior (VGE=0/15V, RG=22Ω, Tj = 150°C, Dynamic test circuit in Figure E) ZthJC, TRANSIENT THERMAL RESISTANCE 60A 0V 0.5us 1us 1.5us t, TIME Figure 22. Typical turn off behavior (VGE=15/0V, RG=22Ω, Tj = 150°C, Dynamic test circuit in Figure E) D=0.5 0.2 -1 10 K/W 0.1 0.05 0.02 R,(K/W) 0.229 0.192 single pulse 0.174 0.055 0.01 -2 10 K/W R1 τ, (s) -1 1.10*10 -2 1.56*10 -3 1.35*10 -4 1.52*10 R2 C1=τ1/R1 C2=τ2/R2 -3 10 K/W 10µs 100µs 1ms 10ms 100ms tP, PULSE WIDTH Figure 23. IGBT transient thermal resistance (D = tp / T) Power Semiconductors 9 Rev. 2.4 Nov. 09 ® IGW25T120 TrenchStop Series Power Semiconductors 10 Rev. 2.4 Nov. 09 IGW25T120 ® TrenchStop Series τ1 τ2 r1 τn r2 rn Tj (t) p(t) r1 r2 rn Figure A. Definition of switching times TC Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance Lσ =180nH and Stray capacity C σ =39pF. Figure B. Definition of switching losses Power Semiconductors 11 Rev. 2.4 Nov. 09 ® IGW25T120 TrenchStop Series Edition 2006-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 11/18/09. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors 12 Rev. 2.4 Nov. 09