IGW50N60T

IGW50N60T TRENCHSTOP™ Series Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology C Features:  Very low VCE(sat) 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s  Designed for : - Frequency Converters - Uninterrupted Power Supply  TRENCHSTOP™ and Fieldstop technology for 600V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed - low VCE(sat)  Positive temperature coefficient in VCE(sat)  Low EMI  Low Gate Charge 1  Qualified according to JEDEC for target applications  Pb-free lead plating; RoHS compliant  Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type IGW50N60T G E PG-TO247-3 VCE IC VCE(sat),Tj=25°C Tj,max Marking Package 600 V 50 A 1.5 V 175 C G50T60 PG-TO247-3 Maximum Ratings Parameter Symbol Value Collector-emitter voltage, Tj ≥ 25C VCE 600 IC 90 Unit V DC collector current, limited by Tjmax TC = 25C, value limited by bondwire 64 TC = 100C A Pulsed collector current, tp limited by Tjmax ICpul s 150 Turn off safe operating area, VCE = 600V, Tj = 175C, tp = 1µs - 150 Gate-emitter voltage VGE 20 V tSC 5 s Power dissipation TC = 25C Ptot 333 W Operating junction temperature Tj -40...+175 Storage temperature Tstg -55...+150 Soldering temperature, 1.6mm (0.063 in.) from case for 10s - Short circuit withstand time 2) VGE = 15V, VCC  400V, Tj  150C 1 2) C 260 J-STD-020 and JESD-022 Allowed number of short circuits: 1s. IFAG IPC TD VLS 1 Rev. 2.8 19.05.2015 IGW50N60T TRENCHSTOP™ Series Thermal Resistance Parameter Symbol Conditions Max. Value Unit RthJC 0.45 K/W RthJA 40 Characteristic IGBT thermal resistance, junction – case Thermal resistance, junction – ambient Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions Value min. Typ. max. 600 - - T j =2 5 C - 1.5 2.0 T j =1 7 5 C - 1.9 - 4.1 4.9 5.7 Unit Static Characteristic Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0V , I C = 0 .2m A Collector-emitter saturation voltage VCE(sat) V V G E = 15 V , I C = 50 A Gate-emitter threshold voltage VGE(th) I C = 0. 8m A, V C E = V G E Zero gate voltage collector current ICES V C E = 60 0 V , V G E = 0V µA T j =2 5 C - - 40 T j =1 7 5 C - - 3500 Gate-emitter leakage current IGES V C E = 0V , V G E =2 0 V - - 100 nA Transconductance gfs V C E = 20 V , I C = 50 A - 31 - S Integrated gate resistor RGint Ω - Dynamic Characteristic Input capacitance Ciss V C E = 25 V , - 3140 - Output capacitance Coss V G E = 0V , - 200 - Reverse transfer capacitance Crss f= 1 MH z - 93 - Gate charge QGate V C C = 48 0 V, I C =5 0 A - 310 - nC PG - T O - 2 2 0- 3 - 1 - 7 - nH PG - T O - 2 4 7- 3 - 2 1 - 13 - V G E = 15 V ,t S C  5 s V C C = 4 0 0 V, T j  1 50  C - 458.3 - pF V G E = 15 V LE Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current 1) 1) IC(SC) A Allowed number of short circuits: 1s. IFAG IPC TD VLS 2 Rev. 2.8 19.05.2015 IGW50N60T TRENCHSTOP™ Series Switching Characteristic, Inductive Load, at Tj=25 C Parameter Symbol Conditions Value min. Typ. max. - 26 - - 29 - - 299 - - 29 - - 1.2 - - 1.4 - - 2.6 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets T j=25 C, VCC=400V,IC=50A, VGE=0/15V,rG=7, L =103nH,C =39pF L , C f rom Fig. E Energy losses include “tail” and diode reverse recovery. Diode from IKW50N60T ns mJ Switching Characteristic, Inductive Load, at Tj=150 C Parameter Symbol Conditions Value min. Typ. max. - 27 - - 33 - - 341 - - 55 - - 1.8 - - 1.8 - - 3.6 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets IFAG IPC TD VLS T j=175 C, VCC=400V,IC=50A, VGE=0/15V,rG=7, L =103nH,C =39pF L , C f rom Fig. E Energy losses include “tail” and diode reverse recovery. Diode from IKW50N60T 3 ns mJ Rev. 2.8 19.05.2015 IGW50N60T TRENCHSTOP™ Series 140A t p =2µs 100A IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 120A 100A T C =80°C 80A T C =110°C 60A 40A 20A 0A 100Hz Ic Ic 10µs 10A 50µs 1ms DC 1A 1kHz 10kHz 100kHz 1V f, SWITCHING FREQUENCY 10V 100V 10ms 1000V VCE, COLLECTOR-EMITTER VOLTAGE Figure 1. Collector current as a function of switching frequency (Tj  175C, D = 0.5, VCE = 400V, VGE = 0/15V, rG = 7) Figure 2. Safe operating area (D = 0, TC = 25C, Tj 175C; VGE=0/15V) 90A 80A IC, COLLECTOR CURRENT Ptot, POWER DISSIPATION 300W 250W 200W 150W 100W 50W 0W 25°C 70A 60A 50A 40A 30A 20A 10A 50°C 75°C 0A 25°C 100°C 125°C 150°C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj  175C) IFAG IPC TD VLS __ Icmax --- max. current limited by bondwire 50°C 75°C 100°C 125°C 150°C TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE  15V, Tj  175C) 4 Rev. 2.8 19.05.2015 IGW50N60T TRENCHSTOP™ Series 120A V G E =20V 100A IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 120A 15V 13V 80A 11V 9V 60A 7V 40A 20A 100A 15V 13V 80A 11V 60A 9V 7V 40A 20A 0A 0A 0V 1V 2V 3V 0V VCE, COLLECTOR-EMITTER VOLTAGE VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE 60A 40A T J =175°C 25°C 0A 0V 2V 4V 6V 8V 3V 2.5V 4V IC =100A 2.0V I C =50A 1.5V IC =25A 1.0V 0.5V 0.0V 0°C VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=20V) IFAG IPC TD VLS 2V Figure 6. Typical output characteristic (Tj = 175°C) 80A 20A 1V VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25°C) IC, COLLECTOR CURRENT V G E =20V 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) 5 Rev. 2.8 19.05.2015 IGW50N60T TRENCHSTOP™ Series t d(off) 100ns t, SWITCHING TIMES t, SWITCHING TIMES t d(off) tr tf t d(on) 100ns tf tr t d(on) 10ns 10ns 0A 20A 40A 60A  80A  IC, COLLECTOR CURRENT     RG, GATE RESISTOR Figure 9. Typical switching times as a function of collector current (inductive load, TJ=175°C, VCE = 400V, VGE = 0/15V, rG = 7Ω, Dynamic test circuit in Figure E) Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ = 175°C, VCE= 400V, VGE = 0/15V, IC = 50A, Dynamic test circuit in Figure E) 7V 100ns tf tr t d(on) 10ns 25°C 50°C 75°C 6V m ax. typ. 5V 4V m in. 3V 2V 1V 0V -50°C 100°C 125°C 150°C TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 50A, rG=7Ω, Dynamic test circuit in Figure E) IFAG IPC TD VLS VGE(th), GATE-EMITT TRSHOLD VOLTAGE t, SWITCHING TIMES t d(off) 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.8mA) 6 Rev. 2.8 19.05.2015 IGW50N60T TRENCHSTOP™ Series *) Eon and Ets include losses due to diode recovery *) E on and E ts include losses Ets* E ts * 6.0mJ Eon* 4.0mJ Eoff 2.0mJ E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES due to diode recovery 6.0m J 8.0mJ 5.0m J 4.0m J 3.0m J E off 2.0m J E on * 1.0m J 0.0m J 0.0mJ 0A 20A 40A 60A  80A  IC, COLLECTOR CURRENT RG, GATE RESISTOR Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ = 175°C, VCE = 400V, VGE = 0/15V, rG = 7Ω, Dynamic test circuit in Figure E) Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ = 175°C, VCE = 400V, VGE = 0/15V, IC = 50A, Dynamic test circuit in Figure E) *) Eon and Ets include losses due to diode recovery *) E on and E ts include losses due to diode recovery 3.0mJ 2.0mJ Eoff Eon* 0.0mJ 25°C 4m J E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES Ets* 1.0mJ 50°C 75°C E on * 3m J E ts * 2m J E off 1m J 0m J 300V 100°C 125°C 150°C TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 50A, rG = 7Ω, Dynamic test circuit in Figure E) IFAG IPC TD VLS  350V 400V 450V 500V 550V VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ = 175°C, VGE = 0/15V, IC = 50A, rG = 7Ω, Dynamic test circuit in Figure E) 7 Rev. 2.8 19.05.2015 IGW50N60T TRENCHSTOP™ Series 1nF 120V c, CAPACITANCE VGE, GATE-EMITTER VOLTAGE C iss 15V 480V 10V C oss 5V 100pF C rss 0V 0nC 100nC 200nC 300nC 0V QGE, GATE CHARGE 10V 20V 30V 40V VCE, COLLECTOR-EMITTER VOLTAGE Figure 17. Typical gate charge (IC=50 A) Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz) tSC, SHORT CIRCUIT WITHSTAND TIME IC(sc), short circuit COLLECTOR CURRENT 12µs 800A 700A 600A 500A 400A 300A 200A 100A 0A 12V 14V 16V 8µs 6µs 4µs 2µs 0µs 10V 18V VGE, GATE-EMITTETR VOLTAGE Figure 19. Typical short circuit collector current as a function of gateemitter voltage (VCE  400V, Tj  150C) IFAG IPC TD VLS 10µs 11V 12V 13V 14V VGE, GATE-EMITETR VOLTAGE Figure 20. Short circuit withstand time as a function of gate-emitter voltage (VCE=400V, start at TJ=25°C, TJmax