IGW60T120FKSA1

IGW60T120 ® TrenchStop Series Low Loss IGBT in TrenchStop® and Fieldstop technology • • • • • • • • • • C Best in class TO247 Short circuit withstand time – 10µs Designed for : - Frequency Converters - Uninterrupted Power Supply ® TrenchStop and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat) Low EMI Low Gate Charge Qualified according to JEDEC1 for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type IGW60T120 G E PG-TO-247-3 VCE IC VCE(sat),Tj=25°C Tj,max Marking Code Package 1200V 60A 1.7V 150°C G60T120 PG-TO-247-3 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCE 1200 V DC collector current IC A TC = 25°C 100 TC = 90°C 60 Pulsed collector current, tp limited by Tjmax ICpuls 150 Turn off safe operating area - 150 VGE ±20 V tSC 10 µs Ptot 375 W Tj -40...+150 °C Storage temperature Tstg -55...+150 Soldering temperature, 1.6mm (0.063 in.) from case for 10s - VCE ≤ 1200V, Tj ≤ 150°C Gate-emitter voltage Short circuit withstand time 2) VGE = 15V, VCC ≤ 1200V, Tj ≤ 150°C Power dissipation TC = 25°C Operating junction temperature 1 2) 260 J-STD-020 and JESD-022 Allowed number of short circuits: 1s. Power Semiconductors 1 Rev. 2.4 Nov. 09 IGW60T120 ® TrenchStop Series Thermal Resistance Parameter Symbol Conditions Max. Value Unit RthJC 0.33 K/W RthJA 40 Characteristic IGBT thermal resistance, junction – case Thermal resistance, junction – ambient Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Value min. typ. max. 1200 - - T j = 25° C - 1.9 2.4 T j = 12 5° C - 2.1 - T j = 15 0° C - 2.3 - 5.0 5.8 6.5 Unit Static Characteristic Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0V, I C = 3. 0mA Collector-emitter saturation voltage VCE(sat) V V G E = 15V, I C = 60A Gate-emitter threshold voltage VGE(th) I C = 2. 0mA, V C E = V G E Zero gate voltage collector current ICES V C E = 1200V , V G E = 0V mA T j = 25° C - - 0.6 T j = 15 0° C - - 6.0 Gate-emitter leakage current IGES V C E = 0V ,V G E = 2 0V - - 600 nA Transconductance gfs V C E = 20V, I C = 60A - 30 - S Integrated gate resistor RGint 4 Ω Dynamic Characteristic pF Input capacitance Ciss Output capacitance Coss V G E = 0V, - 180 - Reverse transfer capacitance Crss f= 1 M Hz - 150 - Gate charge QGate V C C = 9 60V, I C = 60A - 280 - nC - 13 - nH - 300 - A V C E = 25V, - 3700 - V G E = 1 5V Internal emitter inductance LE measured 5mm (0.197 in.) from case Short circuit collector current1) 1) IC(SC) V G E = 1 5V,t S C ≤10µs V C C = 600V, T j = 25° C Allowed number of short circuits: 1s. Power Semiconductors 2 Rev. 2.4 Nov. 09 IGW60T120 ® TrenchStop Series Switching Characteristic, Inductive Load, at Tj=25 °C Parameter Symbol Conditions Value min. typ. max. - 50 - - 44 - - 480 - - 80 - - 4.3 - - 5.2 - - 9.5 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets T j = 25° C, V C C = 6 00V, I C = 60A, V G E = 0/ 1 5V , R G = 1 0Ω , L σ 2 ) = 180nH, C σ 2 ) =39pF Energy losses include “tail” and diode reverse recovery. ns mJ Switching Characteristic, Inductive Load, at Tj=150 °C Parameter Symbol Conditions Value min. typ. max. - 50 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets 2) T j = 15 0° C V C C = 6 00V, I C = 60A, V G E = 0/ 1 5V , R G = 10Ω, L σ 2 ) = 180nH, C σ 2 ) =39pF Energy losses include “tail” and diode reverse recovery. - 45 - - 600 - - 130 - - 6.4 - - 9.4 - - 15.8 - ns mJ Leakage inductance L σ and Stray capacity C σ due to dynamic test circuit in Figure E. Power Semiconductors 3 Rev. 2.4 Nov. 09 IGW60T120 ® TrenchStop Series 150A 100A 10µs TC=80°C IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 125A tp=3µs 100A TC=110°C 75A 50A Ic 25A Ic 10A 50µs 150µs 500µs 1A 20ms DC 0A 10Hz 100Hz 1kHz 10kHz 0,1A 1V 100kHz f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj ≤ 150°C, D = 0.5, VCE = 600V, VGE = 0/+15V, RG = 10Ω) 10V 100V 1000V VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25°C, Tj ≤150°C;VGE=15V) 350W 80A 100W IC, COLLECTOR CURRENT POWER DISSIPATION 150W Ptot, 300W 250W 200W 60A 40A 20A 50W 0W 25°C 50°C 75°C 100°C 0A 25°C 125°C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj ≤ 150°C) Power Semiconductors 4 75°C 125°C TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE ≥ 15V, Tj ≤ 150°C) Rev. 2.4 Nov. 09 IGW60T120 ® TrenchStop Series 125A VGE=17V 100A 15V 75A 11V IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 125A 13V 9V 7V 50A 25A 15V 75A 11V 13V 9V 7V 50A 0A 0V 1V 2V 3V 4V 5V 6V 0V 125A 100A 75A 50A 25A TJ=150°C 25°C 0V 2V 4V 6V 8V 10V 12V VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=20V) Power Semiconductors 1V 2V 3V 4V 5V 6V VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 150°C) VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25°C) IC, COLLECTOR CURRENT 100A 25A 0A 0A VGE=17V 3,5V IC=100A 3,0V 2,5V IC=60A 2,0V IC=30A 1,5V IC=15A 1,0V 0,5V 0,0V -50°C 0°C 50°C 100°C TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) 5 Rev. 2.4 Nov. 09 IGW60T120 ® TrenchStop Series td(off) 1000 ns t, SWITCHING TIMES t, SWITCHING TIMES tf 100ns td(on) tr 10ns 1ns 20A 40A 60A td(off) tf 100 ns td(on) tr 10 ns 1 ns 80A 5Ω IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=150°C, VCE=600V, VGE=0/15V, RG=10Ω, Dynamic test circuit in Figure E) 15Ω 25Ω 35Ω 45Ω RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ=150°C, VCE=600V, VGE=0/15V, IC=60A, Dynamic test circuit in Figure E) VGE(th), GATE-EMITT TRSHOLD VOLTAGE t, SWITCHING TIMES td(off) 100ns t f td(on) tr 10ns 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE=600V, VGE=0/15V, IC=60A, RG=10Ω, Dynamic test circuit in Figure E) Power Semiconductors 7V 6V max. 5V typ. 4V min. 3V 2V 1V 0V -50°C 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 2.0mA) 6 Rev. 2.4 Nov. 09 IGW60T120 ® TrenchStop Series Ets* *) Eon and Etsinclude losses due to diode recovery 25,0mJ 20,0mJ 15,0mJ Eoff 10,0mJ Eon* 5,0mJ *) Eon and Ets include losses due to diode recovery E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES 30,0mJ Ets* 20 mJ 15 mJ 10 mJ Eoff Eon* 0,0mJ 20A 40A 60A 5 mJ 80A IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ=150°C, VCE=600V, VGE=0/15V, RG=10Ω, Dynamic test circuit in Figure E) 25mJ 14mJ 12mJ E off 10mJ 8mJ E on* 6mJ E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES 16mJ 15Ω 25Ω 35Ω RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ=150°C, VCE=600V, VGE=0/15V, IC=60A, Dynamic test circuit in Figure E) E ts* *) E on and E ts include losses due to diode recovery 5Ω *) Eon and Ets include losses due to diode recovery 20mJ 15mJ 10mJ Ets* Eoff 5mJ Eon* 4mJ 50°C 100°C 150°C 400V TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE=600V, VGE=0/15V, IC=60A, RG=10Ω, Dynamic test circuit in Figure E) Power Semiconductors 500V 600V 700V 800V VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ=150°C, VGE=0/15V, IC=60A, RG=10Ω, Dynamic test circuit in Figure E) 7 Rev. 2.4 Nov. 09 IGW60T120 ® TrenchStop Series 1nF 15V 240V c, CAPACITANCE VGE, GATE-EMITTER VOLTAGE Ciss 960V 10V Crss 100pF 5V 0V 0nC 100nC 200nC 10pF 300nC 15µs 10µs tSC, 5µs 0µs 12V 10V 20V 400A 300A 200A 100A 0A 14V VGE, GATE-EMITTETR VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE=600V, start at TJ=25°C) Power Semiconductors 0V VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz) IC(sc), short circuit COLLECTOR CURRENT QGE, GATE CHARGE Figure 17. Typical gate charge (IC=60 A) SHORT CIRCUIT WITHSTAND TIME Coss 12V 14V 16V 18V VGE, GATE-EMITTETR VOLTAGE Figure 20. Typical short circuit collector current as a function of gateemitter voltage (VCE ≤ 600V, Tj ≤ 150°C) 8 Rev. 2.4 Nov. 09 IGW60T120 ® VCE 600V 90A 400V 60A 200V 30A 0V 600V 90A 60A IC 400V 200V 30A VCE IC 0A 0us 0.5us 1us 1.5us t, TIME Figure 21. Typical turn on behavior (VGE=0/15V, RG=10Ω, Tj = 150°C, Dynamic test circuit in Figure E) ZthJC, TRANSIENT THERMAL RESISTANCE IC, COLLECTOR CURRENT VCE, COLLECTOR-EMITTER VOLTAGE TrenchStop Series 0A 0us 0V 0.5us 1us 1.5us t, TIME Figure 22. Typical turn off behavior (VGE=15/0V, RG=10Ω, Tj = 150°C, Dynamic test circuit in Figure E) D=0.5 -1 10 K/W 0.2 0.1 R,(K/W) 0.2003 0.0776 0.0469 0.0053 0.05 -2 10 K/W 0.02 0.01 single pulseR 1 τ, (s) -2 7.98*10 -3 3.86*10 -4 4.44*10 -5 4.87*10 R2 C1=τ1/R1 C2=τ2/R2 10ms 100ms -3 10 K/W 10µs 100µs 1ms tP, PULSE WIDTH Figure 23. IGBT transient thermal resistance (D = tp / T) Power Semiconductors 9 Rev. 2.4 Nov. 09 ® IGW60T120 TrenchStop Series Power Semiconductors 10 Rev. 2.4 Nov. 09 IGW60T120 ® TrenchStop Series τ1 τ2 r1 τn r2 rn Tj (t) p(t) r1 r2 rn Figure A. Definition of switching times TC Figure D. Thermal equivalent circuit Figure B. Definition of switching losses Power Semiconductors Figure E. Dynamic test circuit Leakage inductance Lσ =180nH and Stray capacity C σ =39pF. 11 Rev. 2.4 Nov. 09 ® IGW60T120 TrenchStop Series Edition 2006-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 11/18/09. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors 12 Rev. 2.4 Nov. 09