IHD06N60RA

IGBT ReverseconductingIGBTwithmonolithicbodydiode IHD06N60RA 600VSoftSwitchingSeries QualifiedtoautomotivestandardAECQ101 Datasheet IndustrialPowerControl IHD06N60RA SoftSwitchingSeries ReverseconductingIGBTwithmonolithicbodydiode  Features: C •Powerfulmonolithicbodydiodewithlowforwardvoltage designedforsoftcommutationonly •TRENCHSTOPTMtechnologyapplicationsoffers: -verytightparameterdistribution -highruggedness,temperaturestablebehavior -lowVCEsat -easyparallelswitchingcapabilityduetopositive temperaturecoefficientinVCEsat •LowEMI •QualifiedtoautomotivestandardAECQ101 •Pb-freeleadplating;RoHScompliant; soldertemperature260°C,MSL1 •CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ G E C G E KeyPerformanceandPackageParameters Type IHD06N60RA VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package 600V 6A 1.45V 175°C H06R60A PG-TO252-3 2 Rev.2.1,2013-02-19 IHD06N60RA SoftSwitchingSeries TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 3 Rev.2.1,2013-02-19 IHD06N60RA SoftSwitchingSeries Maximumratings Parameter Symbol Value Unit Collector-emittervoltage,Tvj≥25°C VCE 600 V DCcollectorcurrent,limitedbyTvjmax TC=25°C TC=100°C IC 12.0 6.0 A Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 18.0 A TurnoffsafeoperatingareaVCE≤600V,Tvj≤175°C - 18.0 A Diodeforwardcurrent,limitedbyTvjmax TC=25°C TC=100°C IF 12.0 6.0 A Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 18.0 A Gate-emitter voltage VGE ±20 V Short circuit withstand time VGE=15.0V,VCC≤250V Allowed number of short circuits < 1000 Time between short circuits: ≥ 1.0s Tvj=150°C tSC PowerdissipationTC=25°C Ptot 88.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -40...+175 °C µs 10 Soldering temperature, reflow soldering (MSL1 according to JEDEC J-STA-020) °C 260 ThermalResistance Parameter Characteristic Symbol Conditions Max.Value Unit IGBT thermal resistance, junction - case Rth(j-c) 1.70 K/W Diode thermal resistance, junction - case Rth(j-c) 1.70 K/W Thermal resistance, min. footprint junction - ambient Rth(j-a) 75 K/W Thermal resistance, 6cm² Cu on PCB junction - ambient Rth(j-a) 50 K/W 4 Rev.2.1,2013-02-19 IHD06N60RA SoftSwitchingSeries ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. 600 - - VGE=15.0V,IC=6.0A Tvj=25°C Tvj=150°C Tvj=175°C - 1.45 1.70 1.75 1.90 - - 1.55 1.65 1.65 1.90 - 4.1 4.9 5.7 V StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA Collector-emitter saturation voltage VCEsat V V Diode forward voltage VF VGE=0V,IF=6.0A Tvj=25°C Tvj=150°C Tvj=175°C Gate-emitter threshold voltage VGE(th) IC=0.18mA,VCE=VGE Zero gate voltage collector current ICES VCE=600V,VGE=0V Tvj=25°C Tvj=175°C - - 40.0 600.0 µA Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=6.0A - 3.7 - S Integrated gate resistor rG V Ω none ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. - 370 - - 28 - - 11 - VCC=480V,IC=6.0A, VGE=15V - 42.0 - nC VGE=15.0V,VCC≤250V, tSC≤10µs Tvj=150°C - - A DynamicCharacteristic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG Short circuit collector current Max. 1000 short circuits IC(SC) Time between short circuits: ≥ 1.0s VCE=25V,VGE=0V,f=1MHz pF 39 SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 25 - ns - 20 - ns - 125 - ns - 145 - ns - 0.05 - mJ - 0.15 - mJ - 0.20 - mJ IGBTCharacteristic,atTvj=25°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Tvj=25°C, VCC=400V,IC=6.0A, VGE=0.0/15.0V, rG=14.7Ω,Lσ=60nH, Cσ=40pF Lσ,CσfromFig.E Diode used for turn on results: SDP04S60 5 Rev.2.1,2013-02-19 IHD06N60RA SoftSwitchingSeries SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 28 - ns - 22 - ns - 165 - ns - 160 - ns - 0.06 - mJ - 0.25 - mJ - 0.31 - mJ IGBTCharacteristic,atTvj=175°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Tvj=175°C, VCC=400V,IC=6.0A, VGE=0.0/15.0V, rG=14.7Ω,Lσ=60nH, Cσ=40pF Lσ,CσfromFig.E Diode used for turn on results: SDP04S60 6 Rev.2.1,2013-02-19 IHD06N60RA SoftSwitchingSeries 20.0 17.5 15.0 IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 10 TC=80° 12.5 TC=110° 10.0 7.5 5.0 tp=1µs 5µs 20µs 100µs 1 1ms 10ms DC 2.5 0.0 1E+4 1E+5 0.1 1E+6 1 f,SWITCHINGFREQUENCY[Hz] Figure 1. Collectorcurrentasafunctionofswitching frequency (Tvj≤175°C,D=0.5,VCE=400V,VGE=15/0V, rG=14.7Ω) 16 80 14 IC,COLLECTORCURRENT[A] 70 Ptot,POWERDISSIPATION[W] 100 1000 Figure 2. Forwardbiassafeoperatingarea (D=0,TC=25°C,Tvj≤175°C;VGE=15V) 90 60 50 40 30 20 12 10 8 6 4 2 10 0 10 VCE,COLLECTOR-EMITTERVOLTAGE[V] 25 50 75 100 125 150 0 175 TC,CASETEMPERATURE[°C] 25 50 75 100 125 150 175 TC,CASETEMPERATURE[°C] Figure 3. Powerdissipationasafunctionofcase temperature (Tvj≤175°C) Figure 4. Collectorcurrentasafunctionofcase temperature (VGE≥15V,Tvj≤175°C) 7 Rev.2.1,2013-02-19 IHD06N60RA SoftSwitchingSeries VGE=20V VGE=20V 15V 18 15V 18 12V 10V 15 IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 12V 9V 7V 12 9 6 3 0 10V 15 9V 7V 12 9 6 3 0 1 2 3 4 5 0 6 0 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 5. Typicaloutputcharacteristic (Tvj=25°C) 3 4 5 6 3.5 VCEsat,COLLECTOR-EMITTERSATURATION[V] Tj=25°C Tj=175°C Tj=-40°C 15 IC,COLLECTORCURRENT[A] 2 Figure 6. Typicaloutputcharacteristic (Tvj=175°C) 18 12 9 6 3 0 1 VCE,COLLECTOR-EMITTERVOLTAGE[V] 2 4 6 8 10 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 12 VGE,GATE-EMITTERVOLTAGE[V] IC=3A IC=6A IC=12A -25 0 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 7. Typicaltransfercharacteristic (VCE=20V) Figure 8. Typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature (VGE=15V) 8 Rev.2.1,2013-02-19 IHD06N60RA SoftSwitchingSeries 1000 1000 td(off) tf td(on) tr t,SWITCHINGTIMES[ns] t,SWITCHINGTIMES[ns] td(off) tf td(on) tr 100 10 3 4 5 6 7 8 9 10 11 100 10 12 5 15 25 IC,COLLECTORCURRENT[A] Figure 9. Typicalswitchingtimesasafunctionof collectorcurrent (inductiveload,Tvj=175°C,VCE=400V, VGE=15/0V,rG=14.7Ω,Dynamictestcircuitin Figure E. Used diode: SDP04S60) 55 65 7 VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V] td(off) tf td(on) tr t,SWITCHINGTIMES[ns] 45 Figure 10. Typicalswitchingtimesasafunctionofgate resistor (inductiveload,Tvj=175°C,VCE=400V, VGE=15/0V,IC=6A,Dynamictestcircuitin Figure E. Used diode: SDP04S60) 1000 100 10 35 rG,GATERESISTOR[Ω] 25 50 75 100 125 150 6 5 4 3 2 -50 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 11. Typicalswitchingtimesasafunctionof junctiontemperature (inductiveload,VCE=400V,VGE=15/0V, IC=6A,rG=14.7Ω,Dynamictestcircuitin Figure E. Used diode: SDP04S60) typ. max. min. -25 0 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 12. Gate-emitterthresholdvoltageasafunction ofjunctiontemperature (IC=0.18mA) 9 Rev.2.1,2013-02-19 IHD06N60RA SoftSwitchingSeries 0.5 0.4 E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] 0.5 Eoff Eon* Ets* 0.3 0.2 0.1 0.0 3 4 5 6 7 8 9 10 11 0.4 0.3 0.2 0.1 0.0 12 Eoff Eon* Ets* 5 15 IC,COLLECTORCURRENT[A] Figure 13. Typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload,Tvj=175°C,VCE=400V, VGE=15/0V,rG=14.7Ω,Dynamictestcircuitin Figure E. Used diode: SDP04S60) 45 55 65 0.5 0.4 E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] 35 Figure 14. Typicalswitchingenergylossesasa functionofgateresistor (inductiveload,Tvj=175°C,VCE=400V, VGE=15/0V,IC=6A,Dynamictestcircuitin Figure E. Used diode: SDP04S60) 0.5 Eoff Eon* Ets* 0.3 0.2 0.1 0.0 25 rG,GATERESISTOR[Ω] 25 50 75 100 125 150 Eoff Eon* Ets* 0.3 0.2 0.1 0.0 300 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 15. Typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload,VCE=400V,VGE=15/0V, IC=6A,rG=14.7Ω,Dynamictestcircuitin Figure E. Used diode: SDP04S60) 0.4 350 400 450 500 VCE,COLLECTOR-EMITTERVOLTAGE[V] 10 Figure 16. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload,Tvj=175°C,VGE=15/0V, IC=6A,rG=14.7Ω,Dynamictestcircuitin Figure E. Used diode: SDP04S60) Rev.2.1,2013-02-19 IHD06N60RA SoftSwitchingSeries 20 1E+4 Ciss Coss Crss 16 C,CAPACITANCE[pF] VGE,GATE-EMITTERVOLTAGE[V] 120V 480V 12 8 1000 100 4 0 0 10 20 30 40 10 50 0 QGE,GATECHARGE[nC] Figure 17. Typicalgatecharge (IC=6A) 15 20 25 30 25 70 tSC,SHORTCIRCUITWITHSTANDTIME[µs] IC(SC),SHORTCIRCUITCOLLECTORCURRENT[A] 10 Figure 18. Typicalcapacitanceasafunctionof collector-emittervoltage (VGE=0V,f=1MHz) 80 60 50 40 30 20 10 0 5 VCE,COLLECTOR-EMITTERVOLTAGE[V] 10 12 14 16 18 20 15 10 5 0 20 VGE,GATE-EMITTERVOLTAGE[V] 10 12 14 16 18 20 VGE,GATE-EMITTERVOLTAGE[V] Figure 19. Typicalshortcircuitcollectorcurrentasa functionofgate-emittervoltage (VCE=250V,Tvj=150°C) Figure 20. Shortcircuitwithstandtimeasafunctionof gate-emittervoltage (VCE≤250V,startatTvj≤150°C) 11 Rev.2.1,2013-02-19 IHD06N60RA Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W] Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W] SoftSwitchingSeries 1 D=0.5 0.2 0.1 0.05 0.02 0.01 0.1 single pulse 1 D=0.5 0.2 0.1 0.05 0.02 0.01 0.1 single pulse i: 1 2 3 4 ri[K/W]: 0.2483 0.5877 0.4533 0.3837 τi[s]: 4.7E-5 5.0E-4 4.8E-3 0.05047 0.01 1E-6 1E-5 1E-4 0.001 0.01 0.1 i: 1 2 3 4 ri[K/W]: 0.2483 0.5877 0.4533 0.3837 τi[s]: 4.7E-5 5.0E-4 4.8E-3 0.05047 0.01 1E-6 1 1E-5 tp,PULSEWIDTH[s] 1E-4 0.001 0.01 0.1 1 tp,PULSEWIDTH[s] Figure 21. IGBTtransientthermalimpedance (D=tp/T) Figure 22. Diodetransientthermalimpedanceasa functionofpulsewidth (D=tp/T) 18 3.0 Tj=25°C, UG=0V IC=3A IC=6A IC=12A Tj=175°C, UG=0V Tj=175°C, UG=4V 15 2.5 Tj=175°C, UG=6V VF,FORWARDVOLTAGE[V] IF,FORWARDCURRENT[A] Tj=175°C, UG=5V Tj=175°C, UG=7V 12 Tj=175°C, UG=8V Tj=175°C, UG=9V Tj=175°C, UG=10V 9 Tj=175°C, UG=12V Tj=175°C, UG=16V 6 3 0 2.0 1.5 1.0 0.5 0 1 2 3 0.0 -50 4 VF,FORWARDVOLTAGE[V] -25 0 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 23. Typicaldiodeforwardcurrentasafunction offorwardvoltage 12 Figure 24. Typicaldiodeforwardvoltageasafunction ofjunctiontemperature Rev.2.1,2013-02-19 IHD06N60RA SoftSwitchingSeries PG - TO252 - 3 13 Rev.2.1,2013-02-19 IHD06N60RA SoftSwitchingSeries t 14 Rev.2.1,2013-02-19 IHD06N60RA SoftSwitchingSeries RevisionHistory IHD06N60RA Revision:2013-02-19,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 0.1 2008-03-17 - 1.2 2008-07-22 - 1.3 2008-07-29 - 1.4 2009-07-14 - 2.1 2013-02-19 Final data sheet WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall? Yourfeedbackwillhelpustocontinuouslyimprovethequalityofthisdocument. Pleasesendyourproposal(includingareferencetothisdocument)to:erratum@infineon.com Publishedby InfineonTechnologiesAG 81726Munich,Germany 81726München,Germany ©2013InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics. Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingthe applicationofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind, includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandprices,pleasecontactthenearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesin question,pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystems and/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineon Technologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support, automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Life supportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustain and/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybe endangered. 15 Rev.2.1,2013-02-19