IHD10N60RA

IGBT ReverseconductingIGBTwithmonolithicbodydiode IHD10N60RA 600VSoftSwitchingSeries QualifiedtoautomotivestandardAECQ101 Datasheet IndustrialPowerControl IHD10N60RA SoftSwitchingSeries ReverseconductingIGBTwithmonolithicbodydiode  Features: C •Powerfulmonolithicbodydiodewithlowforwardvoltage designedforsoftcommutationonly •TRENCHSTOPTMtechnologyapplicationsoffers: -verytightparameterdistribution -highruggedness,temperaturestablebehavior -lowVCEsat -easyparallelswitchingcapabilityduetopositive temperaturecoefficientinVCEsat •LowEMI •QualifiedtoautomotivestandardAECQ101 •Pb-freeleadplating;RoHScompliant; soldertemperature260°C,MSL1 •CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ G E C G E KeyPerformanceandPackageParameters Type IHD10N60RA VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package 600V 10A 1.45V 175°C H10R60A PG-TO252-3 2 Rev.2.1,2013-02-19 IHD10N60RA SoftSwitchingSeries TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 3 Rev.2.1,2013-02-19 IHD10N60RA SoftSwitchingSeries Maximumratings Parameter Symbol Value Unit Collector-emitter voltage VCE 600 V DCcollectorcurrent,limitedbyTvjmax TC=25°C TC=100°C IC 20.0 10.0 A Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 30.0 A TurnoffsafeoperatingareaVCE≤600V,Tvj≤175°C - 30.0 A Diodeforwardcurrent,limitedbyTvjmax TC=25°C TC=100°C IF 20.0 10.0 A Gate-emitter voltage VGE ±20 V Short circuit withstand time VGE=15.0V,VCC≤250V Allowed number of short circuits < 1000 Time between short circuits: ≥ 1.0s Tvj=125°C tSC PowerdissipationTC=25°C Ptot 110.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -40...+175 °C µs 10 Soldering temperature, reflow soldering (MSL1 according to JEDEC J-STA-020) °C 260 ThermalResistance Parameter Characteristic Symbol Conditions Max.Value Unit IGBT thermal resistance, junction - case Rth(j-c) 1.35 K/W Diode thermal resistance, junction - case Rth(j-c) 1.35 K/W Thermal resistance, min. footprint junction - ambient Rth(j-a) 75 K/W Thermal resistance, 6cm² Cu on PCB junction - ambient Rth(j-a) 50 K/W 4 Rev.2.1,2013-02-19 IHD10N60RA SoftSwitchingSeries ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. 600 - - VGE=15.0V,IC=10.0A Tvj=25°C Tvj=150°C Tvj=175°C - 1.45 1.70 1.75 1.90 - - 1.55 1.65 1.65 1.90 - 4.1 4.9 5.7 V StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA Collector-emitter saturation voltage VCEsat V V Diode forward voltage VF VGE=0V,IF=10.0A Tvj=25°C Tvj=150°C Tvj=175°C Gate-emitter threshold voltage VGE(th) IC=0.30mA,VCE=VGE Zero gate voltage collector current ICES VCE=600V,VGE=0V Tvj=25°C Tvj=175°C - - 40.0 600.0 µA Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=10.0A - 6.0 - S Integrated gate resistor rG V Ω none ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. - 550 - - 40 - - 17 - - 62.0 - nC - 7.0 - nH - A DynamicCharacteristic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG Internal emitter inductance measured 5mm (0.197 in.) from case LE Short circuit collector current Max. 1000 short circuits IC(SC) Time between short circuits: ≥ 1.0s VCE=25V,VGE=0V,f=1MHz VCC=480V,IC=10.0A, VGE=15V VGE=15.0V,VCC≤250V, tSC≤10µs - pF SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 170 - ns - 90 - ns - 0.27 - mJ IGBTCharacteristic,atTvj=25°C Turn-off delay time td(off) Fall time tf Turn-off energy Eoff Tvj=25°C, VCC=400V,IC=10.0A, VGE=0.0/15.0V, rG=23.0Ω,Lσ=60nH, Cσ=40pF Lσ,CσfromFig.E 5 Rev.2.1,2013-02-19 IHD10N60RA SoftSwitchingSeries SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 205 - ns - 150 - ns - 0.45 - mJ IGBTCharacteristic,atTvj=175°C Turn-off delay time td(off) Fall time tf Turn-off energy Eoff Tvj=175°C, VCC=400V,IC=10.0A, VGE=0.0/15.0V, rG=23.0Ω,Lσ=60nH, Cσ=40pF Lσ,CσfromFig.E 6 Rev.2.1,2013-02-19 IHD10N60RA SoftSwitchingSeries 32 24 IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 28 TC=80° 20 TC=110° 16 12 8 10 tp=1µs 5µs 20µs 1 100µs 1ms 10ms 4 0 DC 10 100 1000 1E+4 1E+5 0.1 1E+6 1 f,SWITCHINGFREQUENCY[Hz] 10 100 1000 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 1. Collectorcurrentasafunctionofswitching frequency (Tj≤150°C,D=0.5,VCE=400V,VGE=15/0V, rG=23Ω) Figure 2. Forwardbiassafeoperatingarea (D=0,TC=25°C,Tj≤175°C;VGE=15V) 100 22 90 20 IC,COLLECTORCURRENT[A] Ptot,POWERDISSIPATION[W] 110 80 70 60 50 40 30 18 16 14 12 10 8 6 20 4 10 2 0 25 50 75 100 125 150 0 175 TC,CASETEMPERATURE[°C] 25 50 75 100 125 150 175 TC,CASETEMPERATURE[°C] Figure 3. Powerdissipationasafunctionofcase temperature (Tj≤175°C) Figure 4. Collectorcurrentasafunctionofcase temperature (VGE≥15V,Tj≤175°C) 7 Rev.2.1,2013-02-19 IHD10N60RA SoftSwitchingSeries VGE=20V VGE=20V 15V 30 15V 30 12V 10V 25 IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 12V 8V 6V 20 15 10 5 0 10V 25 8V 6V 20 15 10 5 0 1 2 3 4 5 0 6 0 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 5. Typicaloutputcharacteristic (Tj=25°C) 3 4 5 6 3.5 VCE(sat),COLLECTOR-EMITTERSATURATION[V] 25°C Tj=175°C 24 IC,COLLECTORCURRENT[A] 2 Figure 6. Typicaloutputcharacteristic (Tj=175°C) 30 18 12 6 0 1 VCE,COLLECTOR-EMITTERVOLTAGE[V] 0 2 4 6 8 10 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 12 VGE,GATE-EMITTERVOLTAGE[V] IC=5A IC=10A IC=20A -25 0 25 50 75 100 125 150 175 Tj,JUNCTIONTEMPERATURE[°C] Figure 7. Typicaltransfercharacteristic (VCE=20V) Figure 8. Typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature (VGE=15V) 8 Rev.2.1,2013-02-19 IHD10N60RA SoftSwitchingSeries 1000 1000 td(off) tf t,SWITCHINGTIMES[ns] t,SWITCHINGTIMES[ns] td(off) tf 100 10 0 4 8 12 16 100 10 20 0 10 20 IC,COLLECTORCURRENT[A] Figure 9. Typicalswitchingtimesasafunctionof collectorcurrent (inductiveload,Tj=175°C,VCE=400V, VGE=15/0V,rG=23Ω) 50 60 70 6 typ. VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V] td(off) tf t,SWITCHINGTIMES[ns] 40 Figure 10. Typicalswitchingtimesasafunctionofgate resistor (inductiveload,Tj=175°C,VCE=400V, VGE=15/0V,IC=10A) 1000 100 10 30 rG,GATERESISTOR[Ω] 25 50 75 100 125 150 4 3 2 1 0 -50 175 TG,JUNCTIONTEMPERATURE[°C] Figure 11. Typicalswitchingtimesasafunctionof junctiontemperature (inductiveload,VCE=400V,VGE=15/0V, IC=10A,rG=23Ω,Dynamictestcircuitin Figure E) 5 -25 0 25 50 75 100 125 150 175 RG,JUNCTIONTEMPERATURE[°C] Figure 12. Gate-emitterthresholdvoltageasafunction ofjunctiontemperature (IC=0.3mA) 9 Rev.2.1,2013-02-19 IHD10N60RA SoftSwitchingSeries 0.7 0.6 Eoff 0.6 E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] Eoff 0.5 0.4 0.3 0.2 0.1 0 2 4 6 8 10 12 14 16 18 0.5 0.4 0.3 0.2 0.1 0.0 20 0 10 IC,COLLECTORCURRENT[A] Figure 13. Typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload,Tj=175°C,VCE=400V, VGE=15/0V,rG=23Ω) 40 50 60 70 0.6 Eoff Eoff 0.5 E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] 30 Figure 14. Typicalswitchingenergylossesasa functionofgateresistor (inductiveload,Tj=175°C,VCE=400V, VGE=15/0V,IC=10A) 0.6 0.4 0.3 0.2 0.1 0.0 20 rG,GATERESISTOR[Ω] 25 50 75 100 125 150 0.4 0.3 0.2 0.1 0.0 300 175 Tj,JUNCTIONTEMPERATURE[°C] Figure 15. Typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload,VCE=400V,VGE=15/0V, IC=10A,rG=23Ω,Dynamictestcircuitin Figure E) 0.5 325 350 375 400 425 450 475 500 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 16. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload,Tj=175°C,VGE=15/0V, IC=10A,rG=23Ω) 10 Rev.2.1,2013-02-19 IHD10N60RA SoftSwitchingSeries 20 1000 120V 480V 16 14 C,CAPACITANCE[pF] VGE,GATE-EMITTERVOLTAGE[V] 18 12 10 8 6 Ciss Coss Crss 100 4 2 0 0 10 20 30 40 50 60 10 70 QGE,GATECHARGE[nC] 0 5 10 15 20 25 30 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 17. Typicalgatecharge (IC=10A) Figure 18. Typicalcapacitanceasafunctionof collector-emittervoltage (VGE=0V,f=1MHz) ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W] tSC,SHORTCIRCUITWITHSTANDTIME[µs] 25 20 15 10 5 1 D=0.5 0.2 0.1 0.05 0.02 0.01 0.1 single pulse i: 1 2 3 4 ri[K/W]: 0.1529 0.5008 0.4092 0.2911 τi[s]: 7.6E-5 7.4E-4 8.3E-3 0.0653 0 10 12 14 16 18 0.01 1E-6 20 VGE,GATE-EMITTERVOLTAGE[V] 1E-5 1E-4 0.001 0.01 0.1 1 tp,PULSEWIDTH[s] Figure 19. Shortcircuitwithstandtimeasafunctionof gate-emittervoltage (VCE≤250V,startatTj≤125°C) 11 Figure 20. IGBTtransientthermalimpedance (D=tp/T) Rev.2.1,2013-02-19 IHD10N60RA SoftSwitchingSeries 30 Tj=175°C, UG=0V 1 Tj=175°C, UG=4V 25 Tj=175°C, UG=5V D=0.5 IF,FORWARDCURRENT[A] ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W] Tj=25°C, UG=0V 0.2 0.1 0.05 0.02 0.01 0.1 single pulse Tj=175°C, UG=6V Tj=175°C, UG=7V 20 Tj=175°C, UG=8V Tj=175°C, UG=9V 15 Tj=175°C, UG=10V Tj=175°C, UG=12V Tj=175°C, UG=16V 10 5 i: 1 2 3 4 ri[K/W]: 0.1529 0.5008 0.4092 0.2911 τi[s]: 7.6E-5 7.4E-4 8.3E-3 0.0653 0.01 1E-6 1E-5 1E-4 0.001 0.01 0.1 0 1 tp,PULSEWIDTH[s] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VF,FORWARDVOLTAGE[V] Figure 21. Diodetransientthermalimpedance (D=tp/T) Figure 22. Typicaldiodeforwardcurrentasafunction offorwardvoltage 2.5 IC=5A IC=10A IC=20A VF,FORWARDVOLTAGE[V] 2.0 1.5 1.0 0.5 0.0 25 50 75 100 125 150 175 Tj,JUNCTIONTEMPERATURE[°C] Figure 23. Typicaldiodeforwardvoltageasafunction ofjunctiontemperature 12 Rev.2.1,2013-02-19 IHD10N60RA SoftSwitchingSeries PG - TO252 - 3 13 Rev.2.1,2013-02-19 IHD10N60RA SoftSwitchingSeries t 14 Rev.2.1,2013-02-19 IHD10N60RA SoftSwitchingSeries RevisionHistory IHD10N60RA Revision:2013-02-19,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 1.1 2007-10-19 - 1.2 2008-03-17 - 1.3 2008-07-22 - 1.4 2008-07-29 - 1.5 2009-04-03 - 2.1 2013-02-19 Final Data Sheet WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall? Yourfeedbackwillhelpustocontinuouslyimprovethequalityofthisdocument. Pleasesendyourproposal(includingareferencetothisdocument)to:erratum@infineon.com Publishedby InfineonTechnologiesAG 81726Munich,Germany 81726München,Germany ©2013InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics. Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingthe applicationofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind, includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandprices,pleasecontactthenearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesin question,pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystems and/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineon Technologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support, automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Life supportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustain and/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybe endangered. 15 Rev.2.1,2013-02-19