IHW30N160R2
Soft Switching Series
TrenchStop® Reverse Conducting (RC-)IGBT with monolithic body diode
Features:
• Powerful monolithic Body Diode with very low forward voltage
• Body diode clamps negative voltages
• Trench and Fieldstop technology for 1600 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
• NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
• Low EMI
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO-247-3
Applications:
• Inductive Cooking
• Soft Switching Applications
VCE
IC
VCE(sat),Tj=25°C
Tj,max
Marking
Package
1600V
30A
1.8V
175°C
H30R1602
PG-TO-247-3
Type
IHW30N160R2
Maximum Ratings
Parameter
Symbol
Value
Collector-emitter voltage
VCE
1600
DC collector current
TC = 25°C
TC = 100°C
IC
Pulsed collector current, tp limited by Tjmax
ICpuls
90
Turn off safe operating area (VCE ≤ 1600V, Tj ≤ 175°C)
-
90
Diode forward current
IF
60
TC = 100°C
30
IFpuls
Diode surge non repetitive current, tp limited by Tjmax
TC = 25°C, tp = 10ms, sine halfwave
TC = 25°C, tp ≤ 2.5µs, sine halfwave
TC = 100°C, tp ≤ 2.5µs, sine halfwave
IFSM
Gate-emitter voltage
VGE
Transient Gate-emitter voltage (tp < 10 µs, D < 0.01)
V
60
30
TC = 25°C
Diode pulsed current, tp limited by Tjmax
A
90
50
130
120
±20
V
±25
Power dissipation TC = 25°C
Ptot
Operating junction temperature
Tj
-40...+175
Storage temperature
Tstg
-55...+175
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
-
1
Unit
312
W
°C
260
J-STD-020 and JESD-022
Power Semiconductors
1
Rev. 2.1
Nov 09
IHW30N160R2
Soft Switching Series
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
Characteristic
IGBT thermal resistance,
RthJC
0.48
RthJCD
0.48
junction – case
Diode thermal resistance,
K/W
junction – case
Thermal resistance,
RthJA
40
junction – ambient
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
min.
Typ.
max.
1600
-
-
T j = 25°C
-
1.8
2.1
T j = 150 °C
-
2.25
-
T j = 175 °C
-
2.35
-
Unit
Static Characteristic
Collector-emitter breakdown voltage
V ( B R ) C E S V G E = 0 V , I C =500 µA
Collector-emitter saturation voltage
VCE(sat)
Diode forward voltage
VF
V G E = 15 V, I C =30A
V
VGE=0V, IF=30A
T j = 25°C
-
1.65
2.0
T j = 150 °C
-
2.0
-
T j = 175 °C
-
2.0
-
5.1
5.8
6.4
T j = 25°C
-
-
5
T j = 175 °C
-
-
2500
Gate-emitter threshold voltage
VGE(th)
I C =0 .75mA,
V C E =V G E
Zero gate voltage collector current
ICES
V C E = 16 00 V ,
VGE=0V
µA
Gate-emitter leakage current
IGES
V C E = 0 V , V G E =20V
-
-
100
nA
Transconductance
gfs
V C E =20V, I C =30A
-
22.5
-
S
Integrated gate resistor
RGint
Power Semiconductors
none
2
Rev. 2.1
Ω
Nov 09
IHW30N160R2
Soft Switching Series
Dynamic Characteristic
Input capacitance
Ciss
V C E =25V,
-
2740
-
Output capacitance
Coss
VGE=0V,
-
68.1
-
Reverse transfer capacitance
Crss
f=1MHz
-
58.7
-
Gate charge
QGate
V C C = 12 80 V,
I C =30A;V G E = 1 5 V
-
94
-
Internal emitter inductance
LE
-
13
-
measured 5mm (0.197 in.) from case
pF
nC
nH
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
Symbol
Conditions
Value
min.
typ.
max.
-
525
-
-
38.3
-
-
-
-
Unit
IGBT Characteristic
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
-
2.53
-
Total switching energy
Ets
-
2.53
-
T j = 25°C ,
V C C = 60 0 V, I C =30A
V G E =0 /1 5V,
R G = 1 0Ω
ns
mJ
Switching Characteristic, Inductive Load, at Tj=175 °C
Parameter
Symbol
Conditions
Value
min.
Typ.
max.
-
564
-
-
111
-
-
-
-
Unit
IGBT Characteristic
T j = 175 °C
V C C = 60 0 V, I C =30A,
V G E = 0 /1 5V,
R G = 1 0Ω
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
-
4.37
-
Total switching energy
Ets
-
4.37
-
Power Semiconductors
3
Rev. 2.1
ns
mJ
Nov 09
IHW30N160R2
Soft Switching Series
tp=1µs
10µs
20µs
TC=80°C
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
80A
TC=110°C
60A
40A
Ic
20A
0A
10Hz
500µs
1A
5ms
100Hz
1kHz
10kHz
0.1A
1V
100kHz
250W
40A
IC, COLLECTOR CURRENT
50A
200W
150W
100W
50W
50°C
75°C
100°C
125°C
100V
1000V
30A
20A
10A
0A
25°C
150°C
TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function of
case temperature
(Tj ≤ 175°C)
Power Semiconductors
10V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. IGBT Safe operating area
(D = 0, TC = 25°C,
Tj ≤175°C;VGE=15V)
300W
0W
25°C
50µs
DC
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency for hard
switching (turn-off)
(Tj ≤ 175°C, D = 0.5, VCE = 600V,
VGE = 0/+15V, RG = 10Ω)
Ptot, DISSIPATED POWER
10A
50°C
75°C
100°C 125°C
150°C
TC, CASE TEMPERATURE
Figure 4. DC Collector current as a function
of case temperature
(VGE ≥ 15V, Tj ≤ 175°C)
4
Rev. 2.1
Nov 09
IHW30N160R2
Soft Switching Series
80A
70A
VGE=20V
60A
15V
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
80A
13V
50A
11V
9V
40A
7V
30A
20A
VGE=20V
60A
13V
0V
3V
80A
70A
60A
50A
40A
30A
TJ=175°C
25°C
10A
0V
2V
4V
6V
8V
10V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(VCE=20V)
Power Semiconductors
1V
2V
3V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristic
(Tj = 175°C)
VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
0A
7V
20A
0A
20A
9V
30A
0A
2V
11V
40A
10A
1V
15V
50A
10A
0V
IC, COLLECTOR CURRENT
70A
IC=60A
3.0V
2.5V
2.0V
IC=30A
1.5V
IC=15A
1.0V
0.5V
0.0V
0°C
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter saturation
voltage as a function of junction
temperature
(VGE =15V)
5
Rev. 2.1
Nov 09
IHW30N160R2
Soft Switching Series
td(off)
1000ns
t, SWITCHING TIMES
t, SWITCHING TIMES
td(off)
100ns
tf
tf
100ns
10ns
0A
10A
20A
30A
40A
50A
60A
10Ω
70A
IC, COLLECTOR CURRENT
Figure 9. Typical switching times as a
function of collector current
(inductive load, TJ=175°C,
VCE=600V, VGE=0/15V, RG=10Ω,
Dynamic test circuit in Figure E)
20Ω
30Ω
40Ω
50Ω
60Ω
70Ω
RG, GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, TJ=175°C, VCE=600V,
VGE=0/15V, IC=30A,
Dynamic test circuit in Figure E)
VGE(th), GATE-EMITT TRSHOLD VOLTAGE
t, SWITCHING TIMES
td(off)
tf
100ns
10ns
25°C
50°C
75°C
100°C
125°C
max.
5V
typ.
4V
min.
3V
2V
-50°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE=600V,
VGE=0/15V, IC=30A, RG=10Ω,
Dynamic test circuit in Figure E)
Power Semiconductors
6V
0°C
50°C
100°C
TJ, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage as a
function of junction temperature
(IC = 0.15mA)
6
Rev. 2.1
Nov 09
IHW30N160R2
Soft Switching Series
Eoff
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
7.0mJ
6.0mJ
Eoff
5.0mJ
4.0mJ
3.0mJ
2.0mJ
6.0mJ
5.0mJ
1.0mJ
4.0mJ
0.0mJ
0A
10A
20A
30A
40A
10Ω
50A
IC, COLLECTOR CURRENT
Figure 13. Typical turn-off energy as a
function of collector current
(inductive load, TJ=175°C,
VCE=600V, VGE=0/15V, RG=10Ω,
Dynamic test circuit in Figure E)
30Ω
40Ω
50Ω
60Ω
70Ω
80Ω
RG, GATE RESISTOR
Figure 14. Typical turn-off energy as a
function of gate resistor
(inductive load, TJ=175°C, VCE=600V,
VGE=0/15V, IC=30A,
Dynamic test circuit in Figure E)
Eoff
7.5mJ
E, SWITCHING ENERGY LOSSES
4.0mJ
E, SWITCHING ENERGY LOSSES
20Ω
3.5mJ
3.0mJ
2.5mJ
Eoff
7.0mJ
6.5mJ
6.0mJ
5.5mJ
5.0mJ
4.5mJ
2.0mJ
25°C
50°C
75°C
4.0mJ
600V
100°C 125°C 150°C
TJ, JUNCTION TEMPERATURE
Figure 15. Typical turn-off energy as a
function of junction temperature
(inductive load, VCE=600V,
VGE=0/15V, IC=30A, RG=10Ω,
Dynamic test circuit in Figure E)
Power Semiconductors
700V
800V
900V
1000V 1100V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 16. Typical turn-off energy as a
function of collector emitter
voltage
(inductive load, TJ=175°C,
VGE=0/15V, IC=30A, RG=10Ω,
Dynamic test circuit in Figure E)
7
Rev. 2.1
Nov 09
IHW30N160R2
Soft Switching Series
Ciss
320V
1nF
1280V
c, CAPACITANCE
VGE, GATE-EMITTER VOLTAGE
15V
10V
5V
0V
100pF
Coss
Crss
0nC
25nC
50nC
75nC
100nC 125nC
0V
QGE, GATE CHARGE
Figure 17. Typical gate charge
(IC=30 A)
10V
20V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 18. Typical capacitance as a function
of collector-emitter voltage
(VGE=0V, f = 1 MHz)
-1
10 K/W
ZthJC, TRANSIENT THERMAL RESISTANCE
ZthJC, TRANSIENT THERMAL RESISTANCE
D=0.5
0.2
0.1
0.05
0.02
R,(K/W)
0.2
0.1514
0.1284
0.01
-2
10 K/W
τ, (s)
-1
1.51*10
-2
1.14*10
-4
8.98*10
R1
R2
single pulse
C1= τ1/R1
C2= τ2/R2
-1
10 K/W
0.2
0.1
0.05
0.02
100µs
1ms
10ms
100ms
1s
tP, PULSE WIDTH
Figure 19. IGBT transient thermal
resistance
(D = tp / T)
Power Semiconductors
τ, (s)
-2
5.49*10
-3
7.70*10
-4
6.83*10
-5
1.94*10
R1
single pulse
-2
10µs
R,(K/W)
0.1385
0.1354
0.1176
0.087
R2
0.01
10 K/W
-3
10 K/W
D=0.5
1µs
10µs
100µs
C1=τ1/R1
1ms
C2=τ2/R2
10ms 100ms
tP, PULSE WIDTH
Figure 20. Diode transient thermal
impedance as a function of pulse width
(D=tP/T)
8
Rev. 2.1
Nov 09
IHW30N160R2
Soft Switching Series
50A
VF, FORWARD VOLTAGE
IF, FORWARD CURRENT
60A
40A
TJ=25°C
30A
175°C
20A
IF=60A
2.0V
30A
15A
1.5V
1.0V
0.5V
10A
0A
2.5V
0.0V
0.0V
0.5V
1.0V
1.5V
2.0V
2.5V
VF, FORWARD VOLTAGE
Figure 21. Typical diode forward current as a
function of forward voltage
Power Semiconductors
9
0°C
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 22. Typical diode forward voltage as a
function of junction temperature
Rev. 2.1
Nov 09
IHW30N160R2
Soft Switching Series
Power Semiconductors
10
Rev. 2.1
Nov 09
IHW30N160R2
Soft Switching Series
i,v
tr r =tS +tF
diF /dt
Qr r =QS +QF
IF
tS
QS
Ir r m
tr r
tF
10% Ir r m
QF
dir r /dt
90% Ir r m
t
VR
Figure C. Definition of diodes
switching characteristics
τ1
τ2
r1
r2
τn
rn
Tj (t)
p(t)
r1
r2
rn
Figure A. Definition of switching times
TC
Figure D. Thermal equivalent
circuit
Figure E. Dynamic test circuit
Figure B. Definition of switching losses
Power Semiconductors
11
Rev. 2.1
Nov 09
IHW30N160R2
Soft Switching Series
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
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characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or
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Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
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Due to technical requirements, components may contain dangerous substances. For information on the
types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies
components may be used in life-support devices or systems only with the express written approval of
Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
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sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other
persons may be endangered.
Power Semiconductors
12
Rev. 2.1
Nov 09