IHW30N65R5XKSA1

ResonantSwitchingSeries ReverseconductingIGBTwithmonolithicbodydiode IHW30N65R5 Datasheet IndustrialPowerControl IHW30N65R5 ResonantSwitchingSeries ReverseconductingIGBTwithmonolithicbodydiode  Features: C •Powerfulmonolithicreverse-conductingdiodewithlowforward voltage •TRENCHSTOPTMtechnologyoffers: -verytightparameterdistribution -highruggednessandstabletemperaturebehavior -verylowVCEsatandlowEoff -easyparallelswitchingcapabilityduetopositive temperaturecoefficientinVCEsat •LowEMI •QualifiedaccordingtoJESD-022fortargetapplications •Pb-freeleadplating;RoHScompliant •CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ G E Applications: •Inductioncooking •Inverterizedmicrowaveovens •Resonantconverters G C E KeyPerformanceandPackageParameters Type IHW30N65R5 VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package 650V 30A 1.35V 175°C H30ER5 PG-TO247-3 2 Rev.2.1,2015-12-22 IHW30N65R5 ResonantSwitchingSeries TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 3 Rev.2.1,2015-12-22 IHW30N65R5 ResonantSwitchingSeries MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Collector-emittervoltage,Tvj≥25°C VCE 650 V DCcollectorcurrent,limitedbyTvjmax TC=25°C TC=100°C IC 60.0 30.0 A Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 90.0 A Turn off safe operating area VCE≤650V,Tvj≤175°C,tp=1µs - 90.0 A Diodeforwardcurrent,limitedbyTvjmax TC=25°C TC=100°C IF 23.0 14.0 A Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 42.0 A Gate-emitter voltage VGE ±20 V PowerdissipationTC=25°C PowerdissipationTC=100°C Ptot 176.0 88.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s °C 260 Mounting torque, M3 screw Maximum of mounting processes: 3 M 0.6 Nm ThermalResistance Parameter Characteristic Symbol Conditions Max.Value Unit IGBT thermal resistance, junction - case Rth(j-c) 0.81 K/W Diode thermal resistance, junction - case Rth(j-c) 3.81 K/W Thermal resistance junction - ambient Rth(j-a) 40 K/W 4 Rev.2.1,2015-12-22 IHW30N65R5 ResonantSwitchingSeries ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. 650 - - V VGE=15.0V,IC=30.0A Tvj=25°C Tvj=175°C - 1.35 1.60 1.70 - V - 1.70 2.00 2.10 - V 3.2 4.0 4.8 V StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA Collector-emitter saturation voltage VCEsat Diode forward voltage VF VGE=0V,IF=30.0A Tvj=25°C Tvj=175°C Gate-emitter threshold voltage VGE(th) IC=0.30mA,VCE=VGE Zero gate voltage collector current ICES VCE=650V,VGE=0V Tvj=25°C Tvj=175°C - - 40 - µA Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=30.0A - 35.0 - S Integrated gate resistor rG Ω none ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. - 3690 - - 34 - - 15 - - 153.0 - nC - 13.0 - nH DynamicCharacteristic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG Internal emitter inductance measured 5mm (0.197 in.) from case LE VCE=25V,VGE=0V,f=1MHz VCC=520V,IC=30.0A, VGE=15V pF SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 29 - ns - 17 - ns - 220 - ns - 8 - ns - 0.85 - mJ - 0.24 - mJ - 1.09 - mJ IGBTCharacteristic,atTvj=25°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Tvj=25°C, VCC=400V,IC=30.0A, VGE=0.0/15.0V, RG(on)=13.0Ω,RG(off)=13.0Ω, Lσ=35nH,Cσ=32pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. 5 Rev.2.1,2015-12-22 IHW30N65R5 ResonantSwitchingSeries DiodeCharacteristic,atTvj=25°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Tvj=25°C, VR=400V, IF=30.0A, diF/dt=1100A/µs dirr/dt - 95 - ns - 1.90 - µC - 28.0 - A - -2000 - A/µs SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 28 - ns - 16 - ns - 240 - ns - 18 - ns - 0.95 - mJ - 0.41 - mJ - 1.36 - mJ - 114 - ns - 3.30 - µC - 45.0 - A - -1650 - A/µs IGBTCharacteristic,atTvj=175°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Tvj=175°C, VCC=400V,IC=30.0A, VGE=0.0/15.0V, RG(on)=13.0Ω,RG(off)=13.0Ω, Lσ=35nH,Cσ=32pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. DiodeCharacteristic,atTvj=175°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Tvj=175°C, VR=400V, IF=30.0A, diF/dt=1100A/µs dirr/dt 6 Rev.2.1,2015-12-22 IHW30N65R5 ResonantSwitchingSeries 100 200 180 160 Ptot,POWERDISSIPATION[W] IC,COLLECTORCURRENT[A] not for linear use 10 1 140 120 100 80 60 40 20 0.1 1 10 100 0 1000 25 VCE,COLLECTOR-EMITTERVOLTAGE[V] 50 75 100 125 150 175 TC,CASETEMPERATURE[°C] Figure 1. Safeoperatingarea (D=0,TC=25°C,Tvj≤175°C,VGE=15V,tp=1µs) Figure 2. Powerdissipationasafunctionofcase temperature (Tvj≤175°C) 70 90 VGE=20V 80 60 15V 13V IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 70 50 40 30 20 11V 9V 60 8V 50 7V 6V 40 30 20 10 0 10 25 50 75 100 125 150 0 175 TC,CASETEMPERATURE[°C] 0.0 0.5 1.0 1.5 2.0 2.5 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 3. Collectorcurrentasafunctionofcase temperature (VGE≥15V,Tvj≤175°C) Figure 4. Typicaloutputcharacteristic (Tvj=25°C) 7 Rev.2.1,2015-12-22 IHW30N65R5 ResonantSwitchingSeries 90 90 VGE = 20V 80 Tvj=25°C Tvj=175°C 80 17V 15V 70 13V IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 70 11V 60 9V 50 8V 7V 40 6V 30 5V 60 50 40 30 20 20 10 10 0 0.0 0.5 1.0 1.5 2.0 2.5 0 3.0 2 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 5. Typicaloutputcharacteristic (Tvj=175°C) 4 5 6 7 8 Figure 6. Typicaltransfercharacteristic (VCE=20V) 2.00 1000 IC = 7A IC = 15A IC = 30A 1.75 td(off) tf td(on) tr 1.50 t,SWITCHINGTIMES[ns] VCEsat,COLLECTOR-EMITTERSATURATION[V] 3 VGE,GATE-EMITTERVOLTAGE[V] 1.25 1.00 0.75 100 10 0.50 0.25 0.00 25 50 75 100 125 150 1 175 Tvj,JUNCTIONTEMPERATURE[°C] 0 10 20 30 40 50 60 IC,COLLECTORCURRENT[A] Figure 7. Typicalcollector-emittersaturationvoltageas Figure 8. Typicalswitchingtimesasafunctionof afunctionofjunctiontemperature collectorcurrent (VGE=15V) (inductiveload,Tvj=175°C,VCE=400V, VGE=0/15V,RGon=13Ω,RGoff=13Ω,dynamic test circuit in Figure E) 8 Rev.2.1,2015-12-22 IHW30N65R5 ResonantSwitchingSeries td(off) tf td(on) tr 100 10 1 10 20 td(off) tf td(on) tr 1000 t,SWITCHINGTIMES[ns] t,SWITCHINGTIMES[ns] 1000 30 40 50 60 70 100 10 1 80 25 RG,GATERESISTANCE[Ω] Figure 9. Typicalswitchingtimesasafunctionofgate resistance (inductiveload,Tvj=175°C,VCE=400V, VGE=0/15V,IC=30A,dynamictestcircuitin Figure E) 75 100 125 150 175 Figure 10. Typicalswitchingtimesasafunctionof junctiontemperature (inductiveload,VCE=400V,VGE=0/15V, IC=30A,RGon=13Ω,RGoff=13Ω,dynamictest circuit in Figure E) 6.0 3.0 typ. min. max. 5.5 Eoff Eon Ets E,SWITCHINGENERGYLOSSES[mJ] VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V] 50 Tvj,JUNCTIONTEMPERATURE[°C] 5.0 4.5 4.0 3.5 3.0 2.5 2.0 2.5 2.0 1.5 1.0 0.5 1.5 1.0 25 50 75 100 125 0.0 150 Tvj,JUNCTIONTEMPERATURE[°C] 0 10 20 30 40 50 60 IC,COLLECTORCURRENT[A] Figure 11. Gate-emitterthresholdvoltageasafunction ofjunctiontemperature (IC=0.3mA) 9 Figure 12. Typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload,Tvj=175°C,VCE=400V, VGE=0/15V,RGon=13Ω,RGoff=13Ω,dynamic test circuit in Figure E) Rev.2.1,2015-12-22 IHW30N65R5 ResonantSwitchingSeries 2.50 1.75 Eoff Eon Ets Eoff Eon Ets 1.50 E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] 2.25 2.00 1.75 1.50 1.25 1.00 0.75 0.50 1.25 1.00 0.75 0.50 0.25 0.25 0.00 10 20 30 40 50 60 70 0.00 80 25 RG,GATERESISTANCE[Ω] 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 13. Typicalswitchingenergylossesasa functionofgateresistance (inductiveload,Tvj=175°C,VCE=400V, VGE=0/15V,IC=30A,dynamictestcircuitin Figure E) Figure 14. Typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload,VCE=400V,VGE=0/15V, IC=30A,RGon=13Ω,RGoff=13Ω,dynamictest circuit in Figure E) 15 1E+4 VCC=130V VCC=520V 14 Cies Coes Cres 12 1000 11 C,CAPACITANCE[pF] VGE,GATE-EMITTERVOLTAGE[V] 13 10 9 8 7 6 5 4 100 10 3 2 1 0 0 20 40 60 80 100 1 120 QG,GATECHARGE[nC] 0 3 6 9 12 15 18 21 24 27 30 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 15. Typicalgatecharge (IC=30A) Figure 16. Typicalcapacitanceasafunctionof collector-emittervoltage (VGE=0V,f=1MHz) 10 Rev.2.1,2015-12-22 IHW30N65R5 ResonantSwitchingSeries Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W] Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W] 1 D = 0.5 0.2 0.1 0.05 0.1 0.02 0.01 single pulse i: 1 2 3 4 5 ri[K/W]: 1.2E-3 0.026208 0.325117 0.273429 0.185068 τi[s]: 5.0E-7 1.7E-5 1.1E-4 7.0E-4 4.5E-3 0.01 1E-6 1E-5 1E-4 0.001 0.01 1 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.1 single pulse i: 1 2 3 4 5 ri[K/W]: 1.8E-3 0.265343 0.526929 2.350517 0.280098 τi[s]: 6.0E-7 6.3E-5 4.5E-4 4.8E-3 0.02441 0.01 1E-6 0.1 1E-5 tp,PULSEWIDTH[s] Figure 17. IGBTtransientthermalimpedanceasa functionofpulsewidth (D=tp/T) 0.01 0.1 4.0 Tvj=25°C,IF=30A Tvj=175°C,IF=30A Tvj=25°C,IF=30A Tvj=175°C,IF=30A 3.5 Qrr,REVERSERECOVERYCHARGE[µC] 175 trr,REVERSERECOVERYTIME[ns] 0.001 Figure 18. Diodetransientthermalimpedanceasa functionofpulsewidth (D=tp/T) 200 150 125 100 75 50 25 0 500 1E-4 tp,PULSEWIDTH[s] 3.0 2.5 2.0 1.5 1.0 0.5 700 900 1100 1300 1500 dIF/dt,DIODECURRENTSLOPE[A/µs] 0.0 500 700 900 1100 1300 1500 dIF/dt,DIODECURRENTSLOPE[A/µs] Figure 19. Typicalreverserecoverytimeasafunction ofdiodecurrentslope (VR=400V) 11 Figure 20. Typicalreverserecoverychargeasa functionofdiodecurrentslope (VR=400V) Rev.2.1,2015-12-22 IHW30N65R5 ResonantSwitchingSeries 60 0 dIrr/dt,DIODEPEAKRATEOFFALLOFIrr[A/µs] Irr,REVERSERECOVERYCURRENT[A] Tvj=25°C,IF=30A Tvj=175°C,IF=30A 50 Tvj=25°C,IF=30A Tvj=175°C,IF=30A -500 -1000 -1500 40 -2000 30 -2500 -3000 20 -3500 -4000 10 -4500 0 500 700 900 1100 1300 -5000 500 1500 dIF/dt,DIODECURRENTSLOPE[A/µs] Figure 21. Typicalreverserecoverycurrentasa functionofdiodecurrentslope (VR=400V) 1100 1300 1500 2.50 Tvj=25°C Tvj=175°C 80 IF=7A IF=15A IF=30A 2.25 VF,FORWARDVOLTAGE[V] 70 IF,FORWARDCURRENT[A] 900 Figure 22. Typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope (VR=400V) 90 60 50 40 30 20 2.00 1.75 1.50 1.25 1.00 0.75 10 0 700 dIF/dt,DIODECURRENTSLOPE[A/µs] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.50 4.0 VF,FORWARDVOLTAGE[V] 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 23. Typicaldiodeforwardcurrentasafunction offorwardvoltage 12 Figure 24. Typicaldiodeforwardvoltageasafunction ofjunctiontemperature Rev.2.1,2015-12-22 IHW30N65R5 ResonantSwitchingSeries Package Drawing PG-TO247-3 13 Rev.2.1,2015-12-22 IHW30N65R5 ResonantSwitchingSeries Testing Conditions VGE(t) I,V 90% VGE t rr = t a + t b Q rr = Q a + Q b dIF/dt a 10% VGE b t Qa IC(t) Qb dI 90% IC 90% IC 10% IC 10% IC Figure C. Definition of diode switching characteristics t VCE(t) t td(off) tf td(on) t tr Figure A. VGE(t) 90% VGE Figure D. 10% VGE t IC(t) CC 2% IC t Figure E. Dynamic test circuit Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor Cr, (only for ZVT switching) VCE(t) t2 E off = t4 VCE x IC x dt E t1 t1 on = VCE x IC x d t 2% VCE t3 t2 t3 t4 t Figure B. 14 Rev.2.1,2015-12-22 IHW30N65R5 ResonantSwitchingSeries RevisionHistory IHW30N65R5 Revision:2015-12-22,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 1.1 2015-06-01 Preliminary 2.1 2015-12-22 Final data sheet Publishedby InfineonTechnologiesAG 81726München,Germany ©InfineonTechnologiesAG2015. AllRightsReserved. ImportantNotice Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”).Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/orany informationregardingtheapplicationoftheproduct,InfineonTechnologiesherebydisclaimsanyandallwarrantiesand liabilitiesofanykind,includingwithoutlimitationwarrantiesofnon-infringementofintellectualpropertyrightsofanythird party. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseof theproductofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityof customer’stechnicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthe completenessoftheproductinformationgiveninthisdocumentwithrespecttosuchapplication. Forfurtherinformationontheproduct,technology,deliverytermsandconditionsandpricespleasecontactyournearest InfineonTechnologiesoffice(www.infineon.com). PleasenotethatthisproductisnotqualifiedaccordingtotheAECQ100orAECQ101documentsoftheAutomotive ElectronicsCouncil. Warnings Duetotechnicalrequirementsproductsmaycontaindangeroussubstances.Forinformationonthetypesinquestion pleasecontactyournearestInfineonTechnologiesoffice. ExceptasotherwiseexplicitlyapprovedbyInfineonTechnologiesinawrittendocumentsignedbyauthorized representativesofInfineonTechnologies,InfineonTechnologies’productsmaynotbeusedinanyapplicationswherea failureoftheproductoranyconsequencesoftheusethereofcanreasonablybeexpectedtoresultinpersonalinjury. 15 Rev.2.1,2015-12-22