Soft Switching Series
IHW30N90T
q
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology
with anti-parallel diode
Features:
• 1.1V Forward voltage of antiparallel diode
• TrenchStop® and Fieldstop technology for 900 V applications offers
:
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- easy parallel switching capability due to positive
temperature coefficient in VCE(sat)
• Low EMI
• Qualified according to JEDEC1 for target applications
• Application specific optimisation of inverse diode
• Pb-free lead plating; RoHS compliant
C
G
E
PG-TO-247-3
Applications:
• Microwave Oven
• Soft Switching Applications for ZCS
Type
IHW30N90T
VCE
IC
VCE(sat),Tj=25°C
Tj,max
Marking
Package
900V
30A
1.5V
175°C
H30T90
PG-TO-247-3
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCE
DC collector current
IC
Value
900
Unit
V
A
60
30
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
ICpuls
90
Turn off safe operating area VCE ≤ 900V, Tj ≤ 175°C
-
90
Diode forward current
IF
23
13
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
IFpuls
36
Gate-emitter voltage
VGE
±20
Transient Gate-emitter voltage (tp < 5 ms)
V
±25
428
W
Tj
-40...+175
°C
Storage temperature
Tstg
-55...+175
°C
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
-
Power dissipation, TC = 25°C
Ptot
Operating junction temperature
1
260
J-STD-020 and JESD-022
Power Semiconductors
1
Rev. 2.3 Nov 08
IHW30N90T
q
Soft Switching Series
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
RthJC
0.35
K/W
RthJCD
1.1
RthJA
40
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
min.
Typ.
max.
900
-
-
T j = 25°C
-
1.5
1.7
T j = 150 °C
-
1.7
-
T j = 175 °C
-
1.8
-
T j = 25°C
-
1.1
1.3
T j = 150 °C
-
1.0
-
T j = 175 °C
-
1.0
-
4.6
5.3
6
Unit
Static Characteristic
Collector-emitter breakdown voltage
V ( B R ) C E S V G E = 0 V , I C =500 μA
Collector-emitter saturation voltage
VCE(sat)
Diode forward voltage
VF
V
V G E = 15 V, I C =30A
VGE=0V, IF=10A
Gate-emitter threshold voltage
VGE(th)
I C =150 μA,V C E =V G E
Zero gate voltage collector current
ICES
V C E = 90 0 V ,
VGE=0V
μA
T j = 25°C
-
-
250
T j = 150 °C
-
-
2500
Gate-emitter leakage current
IGES
V C E = 0 V ,V G E =20V
-
-
600
nA
Transconductance
gfs
V C E =20V, I C =20A
-
26
-
S
Input capacitance
Ciss
V C E =25V,
-
2617
-
pF
Output capacitance
Coss
VGE=0V,
-
96
-
Reverse transfer capacitance
Crss
f=1MHz
-
38
-
Gate charge
QGate
V C C = 72 0 V, I C =30A
-
280
-
nC
-
13
-
nH
Dynamic Characteristic
V G E =15V
Internal emitter inductance
LE
measured 5mm (0.197 in.) from case
Power Semiconductors
2
Rev. 2.3 Nov 08
IHW30N90T
q
Soft Switching Series
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
Symbol
Conditions
Value
min.
Typ.
max.
Unit
IGBT Characteristic
Turn-on delay time
td(on)
T j = 25°C ,
-
45
-
Rise time
tr
V C C = 60 0 V, I C =30A,
-
26
-
Turn-off delay time
td(off)
V G E = 0 /1 5 V,
-
556
-
Fall time
tf
R G = 1 5Ω ,
-
29
-
Turn-on energy
Eon
-
-
-
Turn-off energy
Eoff
-
1.8
-
Total switching energy
Ets
-
1.8
-
ns
mJ
Switching Characteristic, Inductive Load, at Tj=175 °C
Parameter
Symbol
Conditions
Value
min.
Typ.
max.
Unit
IGBT Characteristic
Turn-on delay time
td(on)
T j = 175 °C
-
44
-
Rise time
tr
V C C = 60 0 V,
-
38
-
Turn-off delay time
td(off)
I C =30A,
-
650
-
Fall time
tf
V G E = 0 /1 5 V,
-
41
-
Turn-on energy
Eon
R G = 1 5Ω
-
-
-
Turn-off energy
Eoff
-
2.4
-
Total switching energy
Ets
-
2.4
-
Power Semiconductors
3
ns
mJ
Rev. 2.3 Nov 08
IHW30N90T
q
Soft Switching Series
tp=1µs
80A
10µs
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
TC=80°C
60A
TC=110°C
40A
Ic
20A
20µs
10A
50µs
200µs
1ms
1A
DC
0A
100Hz
1kHz
10kHz
1V
100kHz
10V
100V
1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. IGBT Safe operating area
(D = 0, TC = 25°C,
Tj ≤175°C;VGE=15V)
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency for triangular
current (Eon = 0, hard turn-off)
(Tj ≤ 175°C, D = 0.5, VCE = 600V,
VGE = 0/+15V, RG = 15Ω)
50A
400W
IC, COLLECTOR CURRENT
Ptot, DISSIPATED POWER
350W
300W
250W
200W
150W
100W
40A
30A
20A
10A
50W
0W
25°C
50°C
75°C
100°C
125°C
0A
25°C
150°C
TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function of
case temperature
(Tj ≤ 175°C)
Power Semiconductors
75°C
125°C
TC, CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(VGE ≥ 15V, Tj ≤ 175°C)
4
Rev. 2.3 Nov 08
IHW30N90T
q
Soft Switching Series
80A
VGE=20V
15V
60A
11V
50A
9V
40A
7V
30A
20A
10A
15V
13V
60A
11V
50A
9V
40A
7V
30A
20A
10A
0A
0V
1V
2V
0A
3V
0V
60A
50A
40A
30A
TJ=175°C
20A
25°C
10A
0A
0V
2V
4V
6V
8V
2V
3V
IC=60A
2.0V
IC=30A
1.5V
IC=15A
1.0V
0.5V
0.0V
-50°C
0°C
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of
junction temperature
(VGE = 15V)
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(VCE=20V)
Power Semiconductors
1V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristic
(Tj = 175°C)
VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
IC, COLLECTOR CURRENT
VGE=20V
70A
13V
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
70A
80A
5
Rev. 2.3 Nov 08
IHW30N90T
q
Soft Switching Series
1000ns
1µs
td(off)
100ns
t, SWITCHING TIMES
t, SWITCHING TIMES
td(off)
td(on)
tf
100ns
td(on)
tf
tr
tr
10ns
0A
10A
20A
30A
40A
10Ω
50A
t, SWITCHING TIMES
td(off)
100ns
tf
td(on)
tr
30Ω
40Ω
50Ω
60Ω
70Ω
RG, GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, TJ=175°C,
VCE=600V, VGE=0/15V, IC=30A,
Dynamic test circuit in Figure E)
VGE(th), GATE-EMITT TRSHOLD VOLTAGE
IC, COLLECTOR CURRENT
Figure 9. Typical switching times as a
function of collector current
(inductive load, TJ=175°C,
VCE=600V, VGE=0/15V, RG=15Ω,
Dynamic test circuit in Figure E)
20Ω
7V
6V
5V
max.
typ.
4V
3V
min.
10ns
0°C
50°C
100°C
2V
-50°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE=600V,
VGE=0/15V, IC=30A, RG=15Ω,
Dynamic test circuit in Figure E)
Power Semiconductors
0°C
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(IC = 0.3mA)
6
Rev. 2.3 Nov 08
IHW30N90T
q
Soft Switching Series
6 mJ
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
5mJ
4mJ
3mJ
Eoff
2mJ
1mJ
20A
30A
40A
5 mJ
4 mJ
3 mJ
2 mJ
1 mJ
0 mJ
0mJ
10A
Eoff
50A
IC, COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, TJ=175°C,
VCE=600V, VGE=0/15V, RG=15Ω,
Dynamic test circuit in Figure E)
10Ω
20Ω
30Ω
40Ω
50Ω
60Ω
70Ω
RG, GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, TJ=175°C,
VCE=600V, VGE=0/15V, IC=30A,
Dynamic test circuit in Figure E)
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
3.0mJ
2.0mJ
E off
1.5mJ
1.0mJ
0.5mJ
2.5mJ
2.0mJ
Eoff
1.5mJ
1.0mJ
0.5mJ
0.0mJ
50°C
100°C
0.0mJ
400V
150°C
TJ, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load, VCE=600V,
VGE=0/15V, IC=30A, RG=15Ω,
Dynamic test circuit in Figure E)
Power Semiconductors
500V
600V
700V
800V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load, TJ=175°C,
VGE=0/15V, IC=30A, RG=15Ω,
Dynamic test circuit in Figure E)
7
Rev. 2.3 Nov 08
IHW30N90T
q
Soft Switching Series
Ciss
180V
10V
c, CAPACITANCE
VGE, GATE-EMITTER VOLTAGE
1nF
720V
5V
Coss
100pF
Crss
0V
10pF
0nC
50nC
100nC
150nC
200nC
250nC
QGE, GATE CHARGE
Figure 17. Typical gate charge
(IC=30 A)
0V
10V
20V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 18. Typical capacitance as a function
of collector-emitter voltage
(VGE=0V, f = 1 MHz)
-1
10 K/W
0.2
R,(K/W)
0.1271
0.1098
0.0869
0.0262
0.1
0.05
R1
0.02
τ, (s)
-2
5.93*10
-3
6.99*10
-4
5.93*10
-5
5.54*10
R2
0.01
single pulse
C1= τ1/R1
C2= τ2/R2
ZthJC, TRANSIENT THERMAL RESISTANCE
ZthJC, TRANSIENT THERMAL RESISTANCE
0
D=0.5
10 K/W
D=0.5
0.2
R,(K/W)
0.0715
0.2222
0.4265
0.364
0.0181
0.1
-1
10 K/W
0.05
R1
0.02
τ, (s)
-2
9.45*10
-2
2.55*10
-3
3.6*10
-4
5.1*10
-4
1.09*10
R2
0.01
single pulse
C1=τ1/R1
C2=τ2/R2
-2
10 K/W
10µs
100µs
1ms
10ms
100ms
10µs
tP, PULSE WIDTH
Figure 19. IGBT transient thermal
resistance
(D = tp / T)
Power Semiconductors
100µs
1ms
10ms
100ms
tP, PULSE WIDTH
Figure 20. Typical Diode transient thermal
impedance as a function of pulse width
(D=tP/T)
8
Rev. 2.3 Nov 08
IHW30N90T
q
Soft Switching Series
IF=20A
TJ=25°C
175°C
10A
VF, FORWARD VOLTAGE
IF, FORWARD CURRENT
30A
20A
10A
0A
0.0V
0.5V
1.0V
3A
0.5V
0.0V
-50°C
1.5V
VF, FORWARD VOLTAGE
Figure 21. Typical diode forward current as
a function of forward voltage
Power Semiconductors
1.0V
0°C
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 22. Typical diode forward voltage
as a function of junction temperature
9
Rev. 2.3 Nov 08
Soft Switching Series
IHW30N90T
q
PG-TO247-3
M
M
MAX
5.16
2.53
2.11
1.33
2.41
2.16
3.38
3.13
0.68
21.10
17.65
1.35
16.03
14.15
5.10
2.60
MIN
4.90
2.27
1.85
1.07
1.90
1.90
2.87
2.87
0.55
20.82
16.25
1.05
15.70
13.10
3.68
1.68
MIN
0.193
0.089
0.073
0.042
0.075
0.075
0.113
0.113
0.022
0.820
0.640
0.041
0.618
0.516
0.145
0.066
5.44
3
19.80
4.17
3.50
5.49
6.04
Power Semiconductors
MAX
0.203
0.099
0.083
0.052
0.095
0.085
0.133
0.123
0.027
0.831
0.695
0.053
0.631
0.557
0.201
0.102
Z8B00003327
0
0
5 5
7.5mm
0.214
3
20.31
4.47
3.70
6.00
6.30
0.780
0.164
0.138
0.216
0.238
10
0.799
0.176
0.146
0.236
0.248
17-12-2007
03
Rev. 2.3 Nov 08
IHW30N90T
q
Soft Switching Series
i,v
tr r =tS +tF
diF /dt
Qr r =QS +QF
tr r
IF
tS
QS
Ir r m
tF
QF
10% Ir r m
dir r /dt
90% Ir r m
t
VR
Figure C. Definition of diodes
switching characteristics
τ1
τ2
r1
r2
τn
rn
Tj (t)
p(t)
r1
r2
rn
Figure A. Definition of switching times
TC
Figure D. Thermal equivalent
circuit
Figure B. Definition of switching losses
Power Semiconductors
11
Rev. 2.3 Nov 08
Soft Switching Series
IHW30N90T
q
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
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characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or
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property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the
types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies
components may be used in life-support devices or systems only with the express written approval of
Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
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sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other
persons may be endangered.
Power Semiconductors
12
Rev. 2.3 Nov 08
