IHW40N60RFKSA1

IGBT ReverseconductingIGBT IHW40N60R ResonantSwitchingSeries Datasheet IndustrialPowerControl IHW40N60R ResonantSwitchingSeries ReverseconductingIGBT  Features: C •Powerfulmonolithicbodydiodewithlowforwardvoltage designedforsoftcommutationonly •TRENCHSTOPTMtechnologyapplicationsoffers: -verytightparameterdistribution -highruggedness,temperaturestablebehavior -lowVCEsat -easyparallelswitchingcapabilityduetopositive temperaturecoefficientinVCEsat •LowEMI •QualifiedaccordingtoJESD-022fortargetapplications •Pb-freeleadplating;RoHScompliant •CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ G Applications: G •Inductivecooking •Inverterizedmicrowaveovens •Resonantconverters •Softswitchingapplications C E E KeyPerformanceandPackageParameters Type IHW40N60R VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package 600V 40A 1.65V 175°C H40R60 PG-TO247-3 2 Rev.2.6,2015-01-26 IHW40N60R ResonantSwitchingSeries TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 3 Rev.2.6,2015-01-26 IHW40N60R ResonantSwitchingSeries MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Collector-emittervoltage,Tvj≥25°C VCE 600 V DCcollectorcurrent,limitedbyTvjmax TC=25°C TC=100°C IC 80.0 40.0 A Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 120.0 A Turn off safe operating area VCE≤600V,Tvj≤175°C,tp=1µs - 120.0 A Diodeforwardcurrent,limitedbyTvjmax TC=25°C TC=100°C IF 80.0 40.0 A Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 120.0 A Gate-emitter voltage VGE ±20 V PowerdissipationTC=25°C PowerdissipationTC=100°C Ptot 305.0 152.5 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s °C 260 Mounting torque, M3 screw Maximum of mounting processes: 3 M 0.6 Nm ThermalResistance Parameter Characteristic Symbol Conditions Max.Value Unit IGBT thermal resistance, junction - case Rth(j-c) 0.49 K/W Diode thermal resistance, junction - case Rth(j-c) 0.49 K/W Thermal resistance junction - ambient Rth(j-a) 40 K/W 4 Rev.2.6,2015-01-26 IHW40N60R ResonantSwitchingSeries ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. 600 - - V VGE=15.0V,IC=40.0A Tvj=25°C Tvj=175°C - 1.65 2.10 2.05 - V - 1.65 1.90 2.05 - V 4.1 4.9 5.7 V StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.50mA Collector-emitter saturation voltage VCEsat Diode forward voltage VF VGE=0V,IF=40.0A Tvj=25°C Tvj=175°C Gate-emitter threshold voltage VGE(th) IC=0.58mA,VCE=VGE Zero gate voltage collector current ICES VCE=600V,VGE=0V Tvj=25°C Tvj=175°C - - Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=40.0A - 19.0 - S Integrated gate resistor rG 40.0 µA 3000.0 Ω none ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. - 2370 - - 80 - - 65 - - 223.0 - nC - 13.0 - nH DynamicCharacteristic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG Internal emitter inductance measured 5mm (0.197 in.) from case LE VCE=25V,VGE=0V,f=1MHz VCC=480V,IC=40.0A, VGE=15V pF SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 193 - ns - 24 - ns - 0.75 - mJ IGBTCharacteristic,atTvj=25°C Turn-off delay time td(off) Fall time tf Turn-off energy Eoff Tvj=25°C, VCC=400V,IC=40.0A, VGE=0.0/15.0V, RG(on)=5.6Ω,RG(off)=5.6Ω, Lσ=90nH,Cσ=67pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. 5 Rev.2.6,2015-01-26 IHW40N60R ResonantSwitchingSeries SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 227 - ns - 44 - ns - 1.22 - mJ IGBTCharacteristic,atTvj=175°C Turn-off delay time td(off) Fall time tf Turn-off energy Eoff Tvj=175°C, VCC=400V,IC=40.0A, VGE=0.0/15.0V, RG(on)=5.6Ω,RG(off)=5.6Ω, Lσ=90nH,Cσ=67pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. 6 Rev.2.6,2015-01-26 IHW40N60R ResonantSwitchingSeries 140 100 120 IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] tp=1µs 100 TC=80° TC=110° 80 60 40 5µs 20µs 10 100µs 1ms 10ms DC 1 20 0 10 100 1000 1E+4 1E+5 0.1 1E+6 1 f,SWITCHINGFREQUENCY[Hz] Figure 1. Collectorcurrentasafunctionofswitching frequency (Tj≤175°C,D=0.5,VCE=400V,VGE=0/15V, RG=5.6Ω) 1000 80 70 IC,COLLECTORCURRENT[A] 300 Ptot,POWERDISSIPATION[W] 100 Figure 2. Forwardbiassafeoperatingarea (D=0,TC=25°C,Tj≤175°C;VGE=15V) 350 250 200 150 100 50 0 10 VCE,COLLECTOR-EMITTERVOLTAGE[V] 60 50 40 30 20 10 25 50 75 100 125 150 0 175 TC,CASETEMPERATURE[°C] 25 50 75 100 125 150 175 TC,CASETEMPERATURE[°C] Figure 3. Powerdissipationasafunctionofcase temperature (Tj≤175°C) Figure 4. Collectorcurrentasafunctionofcase temperature (VGE≥15V,Tj≤175°C) 7 Rev.2.6,2015-01-26 IHW40N60R ResonantSwitchingSeries 120 VGE=20V VGE=20V 17V 120 17V 100 13V 100 IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 15V 11V 9V 80 7V 60 40 13V 11V 80 9V 7V 60 40 20 20 0 15V 0 1 2 3 4 5 0 6 0 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 5. Typicaloutputcharacteristic (Tj=25°C) 3 4 5 6 3.5 VCE(sat),COLLECTOR-EMITTERSATURATION[V] Tj=25°C Tj=175°C 100 IC,COLLECTORCURRENT[A] 2 Figure 6. Typicaloutputcharacteristic (Tj=175°C) 120 80 60 40 20 0 1 VCE,COLLECTOR-EMITTERVOLTAGE[V] 0 2 4 6 8 10 IC=20A IC=40A IC=80A 3.0 2.5 2.0 1.5 1.0 12 VGE,GATE-EMITTERVOLTAGE[V] 0 25 50 75 100 125 150 175 Tj,JUNCTIONTEMPERATURE[°C] Figure 7. Typicaltransfercharacteristic (VCE=20V) Figure 8. Typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature (VGE=15V) 8 Rev.2.6,2015-01-26 IHW40N60R ResonantSwitchingSeries 1000 td(off) tf td(off) tf t,SWITCHINGTIMES[ns] t,SWITCHINGTIMES[ns] 1000 100 10 0 20 40 60 100 10 80 0 10 IC,COLLECTORCURRENT[A] Figure 9. Typicalswitchingtimesasafunctionof collectorcurrent (inductiveload,Tj=175°C,VCE=400V, VGE=0/15V,RG(on)=5.6Ω,RG(off)=5.6Ω, dynamic test circuit in Figure E) 40 50 7 VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V] td(off) tf t,SWITCHINGTIMES[ns] 30 Figure 10. Typicalswitchingtimesasafunctionofgate resistance (inductiveload,Tj=175°C,VCE=400V, VGE=0/15V,IC=40A,dynamictestcircuitin Figure E) 1000 100 10 20 RG,GATERESISTANCE[Ω] 25 50 75 100 125 150 6 5 4 3 2 1 175 Tj,JUNCTIONTEMPERATURE[°C] Figure 11. Typicalswitchingtimesasafunctionof junctiontemperature (inductiveload,VCE=400V,VGE=0/15V, IC=40A,RG(on)=5.6Ω,RG(off)=5.6Ω,dynamic test circuit in Figure E) typ. min. max. 0 25 50 75 100 125 150 175 Tj,JUNCTIONTEMPERATURE[°C] Figure 12. Gate-emitterthresholdvoltageasafunction ofjunctiontemperature (IC=0.58mA) 9 Rev.2.6,2015-01-26 IHW40N60R ResonantSwitchingSeries 3.0 3.00 Eoff Eoff E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] 2.75 2.5 2.0 1.5 1.0 0.5 2.50 2.25 2.00 1.75 1.50 1.25 0.0 0 10 20 30 40 50 60 70 1.00 80 0 IC,COLLECTORCURRENT[A] 10 20 30 40 50 RG,GATERESISTANCE[Ω] Figure 13. Typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload,Tj=175°C,VCE=400V, VGE=0/15V,RG(on)=5.6Ω,RG(off)=5.6Ω, dynamic test circuit in Figure E) Figure 14. Typicalswitchingenergylossesasa functionofgateresistance (inductiveload,Tj=175°C,VCE=400V, VGE=0/15V,dynamictestcircuitinFigureE) 1.50 2.0 E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] Eoff 1.25 1.00 0.75 0.50 25 50 75 100 125 150 Eon* 1.2 0.8 0.4 0.0 300 175 Tj,JUNCTIONTEMPERATURE[°C] Figure 15. Typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload,VCE=400V,VGE=0/15V, IC=40A,RG(on)=5.6Ω,RG(off)=5.6Ω,dynamic test circuit in Figure E) 1.6 400 VCE,COLLECTOR-EMITTERVOLTAGE[V] 10 Figure 16. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload,Tj=175°C,VGE=0/15V, IC=40A,RG(on)=5.6Ω,RG(off)=5.6Ω,dynamic test circuit in Figure E) Rev.2.6,2015-01-26 IHW40N60R ResonantSwitchingSeries 16 120V 480V 12 Cies Coes Cres 1000 C,CAPACITANCE[pF] VGE,GATE-EMITTERVOLTAGE[V] 14 10 8 6 100 4 2 0 0 50 100 150 200 10 250 QGE,GATECHARGE[nC] 10 30 Figure 18. Typicalcapacitanceasafunctionof collector-emittervoltage (VGE=0V,f=1MHz) 1 ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W] 1 D=0.5 0.2 0.1 0.05 0.02 0.01 single pulse 0.1 0.01 D=0.5 0.2 0.1 0.05 0.02 0.01 single pulse 0.1 0.01 i: 1 2 3 4 ri[K/W]: 0.0655 0.1301 0.1899 0.1045 τi[s]: 1.4E-4 1.0E-3 0.01054274 0.07949796 0.001 1E-6 20 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 17. Typicalgatecharge (IC=40A) ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W] 0 1E-5 1E-4 0.001 0.01 0.1 i: 1 2 3 4 ri[K/W]: 0.0655 0.1301 0.1899 0.1045 τi[s]: 1.4E-4 1.0E-3 0.01054274 0.07949796 0.001 1E-6 1 tp,PULSEWIDTH[s] 1E-5 1E-4 0.001 0.01 0.1 1 tp,PULSEWIDTH[s] Figure 19. IGBTtransientthermalimpedance (D=tp/T) Figure 20. Diodetransientthermalimpedanceasa functionofpulsewidth (D=tp/T) 11 Rev.2.6,2015-01-26 IHW40N60R ResonantSwitchingSeries 120 3.00 Tj=25°C Tj=175°C IF=20A IF=40A IF=80A 2.75 VF,FORWARDVOLTAGE[V] IF,FORWARDCURRENT[A] 100 80 60 40 2.50 2.25 2.00 1.75 1.50 20 1.25 0 0 1 2 3 1.00 4 VF,FORWARDVOLTAGE[V] 0 25 50 75 100 125 150 175 Tj,JUNCTIONTEMPERATURE[°C] Figure 21. Typicaldiodeforwardcurrentasafunction offorwardvoltage 12 Figure 22. Typicaldiodeforwardvoltageasafunction ofjunctiontemperature Rev.2.6,2015-01-26 IHW40N60R ResonantSwitchingSeries PG-TO247-3 13 Rev.2.6,2015-01-26 IHW40N60R ResonantSwitchingSeries VGE(t) I,V 90% VGE t rr = t a + t b Q rr = Q a + Q b dIF/dt a 10% VGE b t Qa IC(t) Qb dI 90% IC 90% IC 10% IC 10% IC Figure C. Definition of diode switching characteristics t VCE(t) t td(off) tf td(on) t tr Figure A. VGE(t) 90% VGE Figure D. 10% VGE t IC(t) CC 2% IC t Figure E. Dynamic test circuit Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor Cr, (only for ZVT switching) VCE(t) t2 E off = t4 VCE x IC x dt E t1 t1 on = VCE x IC x d t 2% VCE t3 t2 t3 t4 t Figure B. 14 Rev.2.6,2015-01-26 IHW40N60R Resonant Switching Series Revision History IHW40N60R Revision: 2015-01-26, Rev. 2.6 Previous Revision Revision Date Subjects (major changes since last revision) 1.1 2007-10-26 - 2.2 2008-07-29 - 2.3 2011-08-03 - 2.4 2013-12-10 New value ICES max limit at 175°C 2.5 2014-03-12 Storage temp -55...+150°C 2.6 2015-01-26 Minor changes We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Published by Infineon Technologies AG 81726 Munich, Germany 81726 München, Germany © 2015 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 15 Rev. 2.6, 2015-01-26