IHW40N65R5XKSA1

ResonantSwitchingSeries ReverseconductingIGBTwithmonolithicbodydiode IHW40N65R5 Datasheet IndustrialPowerControl IHW40N65R5 ResonantSwitchingSeries Reverse-ConductingIGBTwithmonolithicbodydiode  Features: C •Powerfulmonolithicreverse-conductingdiodewithlowforward voltage •TRENCHSTOPTMtechnologyoffers: -verytightparameterdistribution -highruggednessandstabletemperaturebehavior -verylowVCEsatandlowEoff -easyparallelswitchingcapabilityduetopositive temperaturecoefficientinVCEsat •LowEMI •QualifiedaccordingtoJESD-022fortargetapplications •Pb-freeleadplating;RoHScompliant •CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ G E Applications: •Inductioncooking •Inverterizedmicrowaveovens •Resonantconverters G C E KeyPerformanceandPackageParameters Type IHW40N65R5 VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package 650V 40A 1.35V 175°C H40ER5 PG-TO247-3 2 Rev.2.3,2015-12-22 IHW40N65R5 ResonantSwitchingSeries TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 3 Rev.2.3,2015-12-22 IHW40N65R5 ResonantSwitchingSeries MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Collector-emittervoltage,Tvj≥25°C VCE 650 V DCcollectorcurrent,limitedbyTvjmax TC=25°C TC=100°C IC 80.0 40.0 A Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 120.0 A Turn off safe operating area VCE≤650V,Tvj≤175°C,tp=1µs - 120.0 A Diodeforwardcurrent,limitedbyTvjmax TC=25°C TC=100°C IF 32.0 19.0 A Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 120.0 A Gate-emitter voltage VGE ±20 V PowerdissipationTC=25°C PowerdissipationTC=100°C Ptot 230.0 115.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s °C 260 Mounting torque, M3 screw Maximum of mounting processes: 3 M 0.6 Nm ThermalResistance Parameter Characteristic Symbol Conditions Max.Value Unit IGBT thermal resistance, junction - case Rth(j-c) 0.65 K/W Diode thermal resistance, junction - case Rth(j-c) 2.85 K/W Thermal resistance junction - ambient Rth(j-a) 40 K/W 4 Rev.2.3,2015-12-22 IHW40N65R5 ResonantSwitchingSeries ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. 650 - - V VGE=15.0V,IC=40.0A Tvj=25°C Tvj=175°C - 1.35 1.60 1.70 - V - 1.70 2.00 2.10 - V 3.2 4.0 4.8 V StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA Collector-emitter saturation voltage VCEsat Diode forward voltage VF VGE=0V,IF=40.0A Tvj=25°C Tvj=175°C Gate-emitter threshold voltage VGE(th) IC=0.40mA,VCE=VGE Zero gate voltage collector current ICES VCE=650V,VGE=0V Tvj=25°C Tvj=175°C - 1000 40 - µA Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=40.0A - 96.0 - S Integrated gate resistor rG Ω none ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. - 4740 - - 44 - - 19 - - 193.0 - nC - 13.0 - nH DynamicCharacteristic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG Internal emitter inductance measured 5mm (0.197 in.) from case LE VCE=25V,VGE=0V,f=1MHz VCC=520V,IC=40.0A, VGE=15V pF SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 34 - ns - 25 - ns - 260 - ns - 13 - ns - 1.10 - mJ - 0.37 - mJ - 1.47 - mJ IGBTCharacteristic,atTvj=25°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Tvj=25°C, VCC=400V,IC=40.0A, VGE=0.0/15.0V, RG(on)=10.0Ω,RG(off)=10.0Ω, Lσ=70nH,Cσ=30pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. 5 Rev.2.3,2015-12-22 IHW40N65R5 ResonantSwitchingSeries DiodeCharacteristic,atTvj=25°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Tvj=25°C, VR=400V, IF=40.0A, diF/dt=1000A/µs dirr/dt - 115 - ns - 2.75 - µC - 37.2 - A - -1550 - A/µs SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 31 - ns - 28 - ns - 300 - ns - 21 - ns - 1.30 - mJ - 0.61 - mJ - 1.91 - mJ - 142 - ns - 3.80 - µC - 45.0 - A - -1550 - A/µs IGBTCharacteristic,atTvj=175°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Tvj=175°C, VCC=400V,IC=40.0A, VGE=0.0/15.0V, RG(on)=10.0Ω,RG(off)=10.0Ω, Lσ=70nH,Cσ=30pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. DiodeCharacteristic,atTvj=175°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Tvj=175°C, VR=400V, IF=40.0A, diF/dt=1000A/µs dirr/dt 6 Rev.2.3,2015-12-22 IHW40N65R5 ResonantSwitchingSeries 250 100 Ptot,POWERDISSIPATION[W] IC,COLLECTORCURRENT[A] 200 not for linear use 10 1 150 100 50 0.1 1 10 100 0 1000 25 VCE,COLLECTOR-EMITTERVOLTAGE[V] 50 75 100 125 150 175 TC,CASETEMPERATURE[°C] Figure 1. Safeoperatingarea (D=0,TC=25°C,Tvj≤175°C,VGE=15V,tp=1µs) Figure 2. Powerdissipationasafunctionofcase temperature (Tvj≤175°C) 80 120 VGE=20V 110 17V 60 IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 70 50 40 30 20 100 15V 90 13V 80 11V 70 9V 8V 60 7V 50 6V 40 30 20 10 10 0 25 50 75 100 125 150 0 175 TC,CASETEMPERATURE[°C] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 3. Collectorcurrentasafunctionofcase temperature (VGE≥15V,Tvj≤175°C) Figure 4. Typicaloutputcharacteristic (Tvj=25°C) 7 Rev.2.3,2015-12-22 IHW40N65R5 ResonantSwitchingSeries 120 120 VGE=20V 17V 100 15V 100 90 13V 90 80 11V 70 9V 8V 60 7V 50 6V 40 5V 30 80 70 60 50 40 30 20 20 10 10 0 0.0 Tvj=25°C Tvj=175°C 110 IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 110 0.5 1.0 1.5 2.0 2.5 0 3.0 0 VCE,COLLECTOR-EMITTERVOLTAGE[V] 2 3 4 5 6 7 8 VGE,GATE-EMITTERVOLTAGE[V] Figure 5. Typicaloutputcharacteristic (Tvj=175°C) Figure 6. Typicaltransfercharacteristic (VCE=20V) 2.00 1000 IC=10A IC=20A IC=40A 1.75 td(off) tf td(on) tr 1.50 t,SWITCHINGTIMES[ns] VCEsat,COLLECTOR-EMITTERSATURATION[V] 1 1.25 1.00 0.75 100 10 0.50 0.25 0.00 0 25 50 75 100 125 150 1 175 Tvj,JUNCTIONTEMPERATURE[°C] 0 10 20 30 40 50 60 70 80 IC,COLLECTORCURRENT[A] Figure 7. Typicalcollector-emittersaturationvoltageas Figure 8. Typicalswitchingtimesasafunctionof afunctionofjunctiontemperature collectorcurrent (VGE=15V) (inductiveload,Tvj=175°C,VCE=400V, VGE=0/15V,RGon=10Ω,RGoff=10Ω,dynamic test circuit in Figure E) 8 Rev.2.3,2015-12-22 IHW40N65R5 ResonantSwitchingSeries 1E+4 1000 td(off) tf td(on) tr td(off) tf td(on) tr t,SWITCHINGTIMES[ns] t,SWITCHINGTIMES[ns] 1000 100 100 10 10 1 0 10 20 30 40 50 60 70 1 80 25 RG,GATERESISTANCE[Ω] Figure 9. Typicalswitchingtimesasafunctionofgate resistance (inductiveload,Tvj=175°C,VCE=400V, VGE=0/15V,IC=40A,dynamictestcircuitin Figure E) 100 125 150 175 3.0 typ. min. max. Eoff Eon Ets 5 E,SWITCHINGENERGYLOSSES[mJ] VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V] 75 Figure 10. Typicalswitchingtimesasafunctionof junctiontemperature (inductiveload,VCE=400V,VGE=0/15V, RGon=10Ω,RGoff=10Ω,dynamictestcircuitin Figure E) 6 4 3 2 1 0 50 Tvj,JUNCTIONTEMPERATURE[°C] 0 25 50 75 100 125 2.5 2.0 1.5 1.0 0.5 0.0 150 Tvj,JUNCTIONTEMPERATURE[°C] 0 10 20 30 40 50 60 70 80 IC,COLLECTORCURRENT[A] Figure 11. Gate-emitterthresholdvoltageasafunction ofjunctiontemperature (IC=0.4mA) 9 Figure 12. Typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload,Tvj=175°C,VCE=400V, VGE=0/15V,RGon=10Ω,RGoff=10Ω,dynamic test circuit in Figure E) Rev.2.3,2015-12-22 IHW40N65R5 ResonantSwitchingSeries 4.0 3.0 Eoff Eon Ets E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] 3.5 Eoff Eon Ets 3.0 2.5 2.0 1.5 1.0 2.5 2.0 1.5 1.0 0.5 0.5 0.0 0 10 20 30 40 50 60 70 0.0 80 25 RG,GATERESISTANCE[Ω] 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 13. Typicalswitchingenergylossesasa functionofgateresistance (inductiveload,Tvj=175°C,VCE=400V, VGE=0/15V,IC=40A,dynamictestcircuitin Figure E) Figure 14. Typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload,VCE=400V,VGE=0/15V, IC=40A,RGon=10Ω,RGoff=10Ω,dynamictest circuit in Figure E) 16 1E+4 130V 520V Cies Coes Cres 12 C,CAPACITANCE[pF] VGE,GATE-EMITTERVOLTAGE[V] 14 10 8 6 1000 100 4 2 0 0 20 40 60 80 10 100 120 140 160 180 200 QG,GATECHARGE[nC] 0 10 20 30 40 50 60 70 80 90 100 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 15. Typicalgatecharge (IC=40A) Figure 16. Typicalcapacitanceasafunctionof collector-emittervoltage (VGE=0V,f=1MHz) 10 Rev.2.3,2015-12-22 IHW40N65R5 ResonantSwitchingSeries Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W] Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W] 1 D=0.5 0.1 0.2 0.1 0.05 0.02 0.01 single pulse 0.01 i: 1 2 3 4 ri[K/W]: 0.1900805 0.2281325 0.2083299 6.5E-3 τi[s]: 2.4E-4 3.0E-3 0.01446956 0.2121156 0.001 1E-6 1E-5 1E-4 0.001 0.01 1 D=0.5 0.2 0.1 0.1 0.05 0.02 0.01 single pulse 0.01 i: 1 2 3 4 5 6 ri[K/W]: 1.668204 0.7015919 0.370506 0.1086465 6.5E-3 1.5E-3 τi[s]: 2.0E-4 1.0E-3 6.3E-3 0.02172364 0.235345 2.062145 0.001 1E-7 0.1 1E-6 tp,PULSEWIDTH[s] Figure 17. IGBTtransientthermalimpedanceasa functionofpulsewidth (D=tp/T) 0.001 0.01 0.1 4.5 Tvj=25°C,IF=40A Tvj=175°C,IF=40A Tvj=25°C,IF=40A Tvj=175°C,IF=40A 4.0 Qrr,REVERSERECOVERYCHARGE[µC] 225 trr,REVERSERECOVERYTIME[ns] 1E-4 Figure 18. Diodetransientthermalimpedanceasa functionofpulsewidth (D=tp/T) 250 200 175 150 125 100 75 50 500 1E-5 tp,PULSEWIDTH[s] 3.5 3.0 2.5 2.0 1.5 1.0 600 700 800 900 1000 1100 dIF/dt,DIODECURRENTSLOPE[A/µs] 0.5 500 600 700 800 900 1000 1100 dIF/dt,DIODECURRENTSLOPE[A/µs] Figure 19. Typicalreverserecoverytimeasafunction ofdiodecurrentslope (VR=400V) 11 Figure 20. Typicalreverserecoverychargeasa functionofdiodecurrentslope (VR=400V) Rev.2.3,2015-12-22 IHW40N65R5 ResonantSwitchingSeries 60 0 Tvj=25°C,IF=40A Tvj=175°C,IF=40A dIrr/dt,DIODEPEAKRATEOFFALLOFIrr[A/µs] Irr,REVERSERECOVERYCURRENT[A] 55 50 45 40 35 Tvj=25°C,IF=40A Tvj=175°C,IF=40A -200 -400 -600 -800 -1000 30 -1200 25 -1400 20 -1600 15 -1800 10 500 600 700 800 900 1000 -2000 500 1100 dIF/dt,DIODECURRENTSLOPE[A/µs] 600 700 800 900 1000 1100 dIF/dt,DIODECURRENTSLOPE[A/µs] Figure 21. Typicalreverserecoverycurrentasa functionofdiodecurrentslope (VR=400V) Figure 22. Typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope (VR=400V) 120 2.50 Tvj=25°C Tvj=175°C 110 IF=10A IF=20A IF=40A 2.25 90 VF,FORWARDVOLTAGE[V] IF,FORWARDCURRENT[A] 100 80 70 60 50 40 30 2.00 1.75 1.50 1.25 1.00 20 0.75 10 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.50 4.0 VF,FORWARDVOLTAGE[V] 0 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 23. Typicaldiodeforwardcurrentasafunction offorwardvoltage 12 Figure 24. Typicaldiodeforwardvoltageasafunction ofjunctiontemperature Rev.2.3,2015-12-22 IHW40N65R5 ResonantSwitchingSeries Package Drawing PG-TO247-3 13 Rev.2.3,2015-12-22 IHW40N65R5 ResonantSwitchingSeries Testing Conditions VGE(t) I,V 90% VGE t rr = t a + t b Q rr = Q a + Q b dIF/dt a 10% VGE b t Qa IC(t) Qb dI 90% IC 90% IC 10% IC 10% IC Figure C. Definition of diode switching characteristics t VCE(t) t td(off) tf td(on) t tr Figure A. VGE(t) 90% VGE Figure D. 10% VGE t IC(t) CC 2% IC t Figure E. Dynamic test circuit Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor Cr, (only for ZVT switching) VCE(t) t2 E off = t4 VCE x IC x dt E t1 t1 on = VCE x IC x d t 2% VCE t3 t2 t3 t4 t Figure B. 14 Rev.2.3,2015-12-22 IHW40N65R5 ResonantSwitchingSeries RevisionHistory IHW40N65R5 Revision:2015-12-22,Rev.2.3 Previous Revision Revision Date Subjects (major changes since last revision) 1.1 2014-06-13 Preliminary data sheet 1.2 2014-06-16 - 2.1 2014-09-12 Final data sheet 2.2 2014-11-27 Update of diode forward current values 2.3 2015-12-22 Minor change Conditions Static Characteristic Publishedby InfineonTechnologiesAG 81726München,Germany ©InfineonTechnologiesAG2015. AllRightsReserved. ImportantNotice Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”).Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/orany informationregardingtheapplicationoftheproduct,InfineonTechnologiesherebydisclaimsanyandallwarrantiesand liabilitiesofanykind,includingwithoutlimitationwarrantiesofnon-infringementofintellectualpropertyrightsofanythird party. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseof theproductofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityof customer’stechnicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthe completenessoftheproductinformationgiveninthisdocumentwithrespecttosuchapplication. Forfurtherinformationontheproduct,technology,deliverytermsandconditionsandpricespleasecontactyournearest InfineonTechnologiesoffice(www.infineon.com). PleasenotethatthisproductisnotqualifiedaccordingtotheAECQ100orAECQ101documentsoftheAutomotive ElectronicsCouncil. Warnings Duetotechnicalrequirementsproductsmaycontaindangeroussubstances.Forinformationonthetypesinquestion pleasecontactyournearestInfineonTechnologiesoffice. ExceptasotherwiseexplicitlyapprovedbyInfineonTechnologiesinawrittendocumentsignedbyauthorized representativesofInfineonTechnologies,InfineonTechnologies’productsmaynotbeusedinanyapplicationswherea failureoftheproductoranyconsequencesoftheusethereofcanreasonablybeexpectedtoresultinpersonalinjury. 15 Rev.2.3,2015-12-22