IHW50N65R5XKSA1

ResonantSwitchingSeries ReverseconductingIGBTwithmonolithicbodydiode IHW50N65R5 Datasheet IndustrialPowerControl IHW50N65R5 ResonantSwitchingSeries ReverseconductingIGBTwithmonolithicbodydiode  Features: C •Powerfulmonolithicreverse-conductingdiodewithlowforward voltage •TRENCHSTOPTMtechnologyoffers: -verytightparameterdistribution -highruggednessandstabletemperaturebehavior -verylowVCEsatandlowEoff -easyparallelswitchingcapabilityduetopositive temperaturecoefficientinVCEsat •LowEMI •QualifiedaccordingtoJESD-022fortargetapplications •Pb-freeleadplating;RoHScompliant •CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ G E Applications: •Inductioncooking •Inverterizedmicrowaveovens •Resonantconverters G C E KeyPerformanceandPackageParameters Type IHW50N65R5 VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package 650V 50A 1.35V 175°C H50ER5 PG-TO247-3 2 Rev.2.4,2015-12-18 IHW50N65R5 ResonantSwitchingSeries TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 3 Rev.2.4,2015-12-18 IHW50N65R5 ResonantSwitchingSeries MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Collector-emittervoltage,Tvj≥25°C VCE 650 V DCcollectorcurrent,limitedbyTvjmax TC=25°Cvaluelimitedbybondwire TC=100°C IC 80.0 50.0 A Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 150.0 A Turn off safe operating area VCE≤650V,Tvj≤175°C,tp=1µs - 150.0 A Diodeforwardcurrent,limitedbyTvjmax TC=25°Cvaluelimitedbybondwire TC=100°C IF 37.0 22.0 A Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 150.0 A Gate-emitter voltage VGE ±20 V PowerdissipationTC=25°C PowerdissipationTC=100°C Ptot 282.0 141.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s °C 260 Mounting torque, M3 screw Maximum of mounting processes: 3 M 0.6 Nm ThermalResistance Parameter Characteristic Symbol Conditions Max.Value Unit IGBT thermal resistance, junction - case Rth(j-c) 0.53 K/W Diode thermal resistance, junction - case Rth(j-c) 2.29 K/W Thermal resistance junction - ambient Rth(j-a) 40 K/W 4 Rev.2.4,2015-12-18 IHW50N65R5 ResonantSwitchingSeries ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. 650 - - V VGE=15.0V,IC=50.0A Tvj=25°C Tvj=175°C - 1.35 1.60 1.70 - V - 1.70 2.00 2.10 - V 3.2 4.0 4.8 V StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA Collector-emitter saturation voltage VCEsat Diode forward voltage VF VGE=0V,IF=50.0A Tvj=25°C Tvj=175°C Gate-emitter threshold voltage VGE(th) IC=0.50mA,VCE=VGE Zero gate voltage collector current ICES VCE=650V,VGE=0V Tvj=25°C Tvj=175°C - 1250 40 - µA Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=50.0A - 120.0 - S Integrated gate resistor rG Ω none ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. - 6140 - - 55 - - 23 - - 230.0 - nC - 13.0 - nH DynamicCharacteristic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG Internal emitter inductance measured 5mm (0.197 in.) from case LE VCE=25V,VGE=0V,f=1MHz VCC=480V,IC=50.0A, VGE=15V pF SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 30 - ns - 20 - ns - 210 - ns - 8 - ns - 1.50 - mJ - 0.45 - mJ - 1.95 - mJ IGBTCharacteristic,atTvj=25°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Tvj=25°C, VCC=400V,IC=50.0A, VGE=0.0/15.0V, RG(on)=8.0Ω,RG(off)=8.0Ω, Lσ=45nH,Cσ=32pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. 5 Rev.2.4,2015-12-18 IHW50N65R5 ResonantSwitchingSeries DiodeCharacteristic,atTvj=25°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Tvj=25°C, VR=400V, IF=50.0A, diF/dt=1100A/µs dirr/dt - 137 - ns - 2.75 - µC - 37.0 - A - -1100 - A/µs SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 29 - ns - 22 - ns - 240 - ns - 21 - ns - 1.76 - mJ - 0.73 - mJ - 2.49 - mJ - 145 - ns - 5.45 - µC - 60.0 - A - -2050 - A/µs IGBTCharacteristic,atTvj=175°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Tvj=175°C, VCC=400V,IC=50.0A, VGE=0.0/15.0V, RG(on)=8.0Ω,RG(off)=8.0Ω, Lσ=45nH,Cσ=32pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. DiodeCharacteristic,atTvj=175°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Tvj=175°C, VR=400V, IF=50.0A, diF/dt=1100A/µs dirr/dt 6 Rev.2.4,2015-12-18 IHW50N65R5 ResonantSwitchingSeries 280 100 240 Ptot,POWERDISSIPATION[W] IC,COLLECTORCURRENT[A] not for linear use 10 1 200 160 120 80 40 0.1 1 10 100 0 1000 25 50 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 1. Safeoperatingarea (D=0,TC=25°C,Tvj≤175°C,VGE=15V,tp=1µs) 100 125 150 175 Figure 2. Powerdissipationasafunctionofcase temperature (Tvj≤175°C) 90 150 140 80 VGE = 20V 17V 130 IC,COLLECTORCURRENT[A] 70 IC,COLLECTORCURRENT[A] 75 TC,CASETEMPERATURE[°C] 60 50 40 30 20 120 15V 110 13V 100 11V 90 9V 80 8V 70 7V 60 6V 50 40 30 20 10 10 0 25 50 75 100 125 150 0 175 TC,CASETEMPERATURE[°C] 0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 3. Collectorcurrentasafunctionofcase temperature (VGE≥15V,Tvj≤175°C) Figure 4. Typicaloutputcharacteristic (Tvj=25°C) 7 Rev.2.4,2015-12-18 IHW50N65R5 ResonantSwitchingSeries 150 150 VGE = 20V 15V 130 13V 120 11V 105 IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 120 9V 8V 90 7V 6V 75 5V 60 45 30 110 100 90 80 70 60 50 40 30 20 15 0 Tvj=25°C Tvj=175°C 140 17V 135 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 3.5 0 VCE,COLLECTOR-EMITTERVOLTAGE[V] 2 3 4 5 6 7 8 VGE,GATE-EMITTERVOLTAGE[V] Figure 5. Typicaloutputcharacteristic (Tvj=175°C) Figure 6. Typicaltransfercharacteristic (VCE=20V) 2.00 1000 IC=10A IC=25A IC=50A 1.75 td(off) tf td(on) tr 1.50 t,SWITCHINGTIMES[ns] VCEsat,COLLECTOR-EMITTERSATURATION[V] 1 1.25 1.00 0.75 100 10 0.50 0.25 0.00 0 25 50 75 100 125 150 1 175 Tvj,JUNCTIONTEMPERATURE[°C] 0 20 40 60 80 100 IC,COLLECTORCURRENT[A] Figure 7. Typicalcollector-emittersaturationvoltageas Figure 8. Typicalswitchingtimesasafunctionof afunctionofjunctiontemperature collectorcurrent (VGE=15V) (inductiveload,Tvj=175°C,VCE=400V, VGE=0/15V,RG(on)=8Ω,RG(off)=8Ω,dynamic test circuit in Figure E) 8 Rev.2.4,2015-12-18 IHW50N65R5 ResonantSwitchingSeries 1E+4 1000 td(off) tf td(on) tr td(off) tf td(on) tr t,SWITCHINGTIMES[ns] t,SWITCHINGTIMES[ns] 1000 100 100 10 10 1 0 10 20 30 40 50 60 70 1 80 25 RG,GATERESISTANCE[Ω] Figure 9. Typicalswitchingtimesasafunctionofgate resistance (inductiveload,Tvj=175°C,VCE=400V, VGE=0/15V,IC=50A,dynamictestcircuitin Figure E) 75 100 125 150 175 Figure 10. Typicalswitchingtimesasafunctionof junctiontemperature (inductiveload,VCE=400V,VGE=0/15V, IC=50A,RG(on)=8Ω,RG(off)=8Ω,dynamictest circuit in Figure E) 6.0 7 typ. min. max. 5.5 6 E,SWITCHINGENERGYLOSSES[mJ] VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V] 50 Tvj,JUNCTIONTEMPERATURE[°C] 5.0 4.5 4.0 3.5 3.0 2.5 2.0 Eoff Eon Ets 5 4 3 2 1 1.5 1.0 0 25 50 75 100 125 0 150 Tvj,JUNCTIONTEMPERATURE[°C] 0 20 40 60 80 100 IC,COLLECTORCURRENT[A] Figure 11. Gate-emitterthresholdvoltageasafunction ofjunctiontemperature (IC=0.5mA) 9 Figure 12. Typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload,Tvj=175°C,VCE=400V, VGE=0/15V,RG(on)=8Ω,RG(off)=8Ω,dynamic test circuit in Figure E) Rev.2.4,2015-12-18 IHW50N65R5 ResonantSwitchingSeries 6.0 2.50 5.0 Eoff Eon Ets 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 2.00 1.75 1.50 1.25 1.00 0.75 0.50 0.25 0.5 0.0 Eoff Eon Ets 2.25 E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] 5.5 0 10 20 30 40 50 60 70 0.00 80 25 RG,GATERESISTANCE[Ω] Figure 13. Typicalswitchingenergylossesasa functionofgateresistance (inductiveload,Tvj=175°C,VCE=400V, VGE=0/15V,IC=50A,dynamictestcircuitin Figure E) 75 100 125 150 175 Figure 14. Typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload,VCE=400V,VGE=0/15V, IC=50A,RG(on)=8Ω,RG(off)=8Ω,dynamictest circuit in Figure E) 20 1E+4 VCC=130V VCC=520V 18 16 14 C,CAPACITANCE[pF] VGE,GATE-EMITTERVOLTAGE[V] 50 Tvj,JUNCTIONTEMPERATURE[°C] 12 10 8 6 Cies Coes Cres 1000 100 4 2 0 0 50 100 150 200 250 300 10 350 QG,GATECHARGE[nC] 0 3 6 9 12 15 18 21 24 27 30 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 15. Typicalgatecharge (IC=50A) Figure 16. Typicalcapacitanceasafunctionof collector-emittervoltage (VGE=0V,f=1MHz) 10 Rev.2.4,2015-12-18 IHW50N65R5 Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W] Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W] ResonantSwitchingSeries D = 0.5 0.2 0.1 0.05 0.1 0.02 0.01 single pulse i: 1 2 3 4 ri[K/W]: 0.1509923 0.1847515 0.1958118 6.0E-3 τi[s]: 2.0E-4 3.3E-3 0.0146925 0.2126033 0.01 1E-6 1E-5 1E-4 0.001 0.01 1 D = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse 0.1 i: 1 2 3 4 5 ri[K/W]: 0.7038717 1.0081 0.3567227 0.2177746 8.5E-3 τi[s]: 1.4E-4 3.7E-4 3.4E-3 0.01523878 0.2085516 0.01 1E-6 0.1 1E-5 tp,PULSEWIDTH[s] Figure 17. IGBTtransientthermalimpedanceasa functionofpulsewidth (D=tp/T) 0.01 7 Tvj=25°C,IF=50A Tvj=175°C,IF=50A Tvj=25°C,IF=50A Tvj=175°C,IF=50A Qrr,REVERSERECOVERYCHARGE[µC] 225 trr,REVERSERECOVERYTIME[ns] 0.001 Figure 18. Diodetransientthermalimpedanceasa functionofpulsewidth (D=tp/T) 250 200 175 150 125 100 75 50 500 1E-4 tp,PULSEWIDTH[s] 600 700 800 900 1000 1100 1200 1300 dIF/dt,DIODECURRENTSLOPE[A/µs] 6 5 4 3 2 1 0 500 600 700 800 900 1000 1100 1200 1300 dIF/dt,DIODECURRENTSLOPE[A/µs] Figure 19. Typicalreverserecoverytimeasafunction ofdiodecurrentslope (VR=400V) 11 Figure 20. Typicalreverserecoverychargeasa functionofdiodecurrentslope (VR=400V) Rev.2.4,2015-12-18 IHW50N65R5 ResonantSwitchingSeries 70 0 dIrr/dt,DIODEPEAKRATEOFFALLOFIrr[A/µs] Tvj=25°C,IF=50A Tvj=175°C,IF=50A Irr,REVERSERECOVERYCURRENT[A] 60 50 Tvj=25°C,IF=50A Tvj=175°C,IF=50A -300 -600 -900 -1200 40 -1500 30 -1800 -2100 20 -2400 10 -2700 0 500 600 700 800 900 -3000 500 1000 1100 1200 1300 dIF/dt,DIODECURRENTSLOPE[A/µs] 600 700 800 900 1000 1100 1200 1300 dIF/dt,DIODECURRENTSLOPE[A/µs] Figure 21. Typicalreverserecoverycurrentasa functionofdiodecurrentslope (VR=400V) Figure 22. Typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope (VR=400V) 150 2.50 Tvj=25°C Tvj=175°C 135 IF=10A IF=25A IF=50A 2.25 VF,FORWARDVOLTAGE[V] IF,FORWARDCURRENT[A] 120 105 90 75 60 45 2.00 1.75 1.50 1.25 1.00 30 0.75 15 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.50 4.0 VF,FORWARDVOLTAGE[V] 0 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 23. Typicaldiodeforwardcurrentasafunction offorwardvoltage 12 Figure 24. Typicaldiodeforwardvoltageasafunction ofjunctiontemperature Rev.2.4,2015-12-18 IHW50N65R5 ResonantSwitchingSeries Package Drawing PG-TO247-3 13 Rev.2.4,2015-12-18 IHW50N65R5 ResonantSwitchingSeries Testing Conditions VGE(t) I,V 90% VGE t rr = t a + t b Q rr = Q a + Q b dIF/dt a 10% VGE b t Qa IC(t) Qb dI 90% IC 90% IC 10% IC 10% IC Figure C. Definition of diode switching characteristics t VCE(t) t td(off) tf td(on) t tr Figure A. VGE(t) 90% VGE Figure D. 10% VGE t IC(t) CC 2% IC t Figure E. Dynamic test circuit Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor Cr, (only for ZVT switching) VCE(t) t2 E off = t4 VCE x IC x dt E t1 t1 on = VCE x IC x d t 2% VCE t3 t2 t3 t4 t Figure B. 14 Rev.2.4,2015-12-18 IHW50N65R5 ResonantSwitchingSeries RevisionHistory IHW50N65R5 Revision:2015-12-18,Rev.2.4 Previous Revision Revision Date Subjects (major changes since last revision) 1.1 2014-06-13 Preliminary data sheet 1.2 2014-06-16 - 2.1 2014-09-12 Final data sheet 2.2 2014-11-27 Update of diode forward current values 2.3 2014-12-16 UpdateFig.14Eon,Eoffat25°C 2.4 2015-12-18 Minor change Conditions Static Characteristic Publishedby InfineonTechnologiesAG 81726München,Germany ©InfineonTechnologiesAG2015. AllRightsReserved. ImportantNotice Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”).Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/orany informationregardingtheapplicationoftheproduct,InfineonTechnologiesherebydisclaimsanyandallwarrantiesand liabilitiesofanykind,includingwithoutlimitationwarrantiesofnon-infringementofintellectualpropertyrightsofanythird party. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseof theproductofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityof customer’stechnicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthe completenessoftheproductinformationgiveninthisdocumentwithrespecttosuchapplication. Forfurtherinformationontheproduct,technology,deliverytermsandconditionsandpricespleasecontactyournearest InfineonTechnologiesoffice(www.infineon.com). PleasenotethatthisproductisnotqualifiedaccordingtotheAECQ100orAECQ101documentsoftheAutomotive ElectronicsCouncil. Warnings Duetotechnicalrequirementsproductsmaycontaindangeroussubstances.Forinformationonthetypesinquestion pleasecontactyournearestInfineonTechnologiesoffice. ExceptasotherwiseexplicitlyapprovedbyInfineonTechnologiesinawrittendocumentsignedbyauthorized representativesofInfineonTechnologies,InfineonTechnologies’productsmaynotbeusedinanyapplicationswherea failureoftheproductoranyconsequencesoftheusethereofcanreasonablybeexpectedtoresultinpersonalinjury. 15 Rev.2.4,2015-12-18