IHW50N65R6XKSA1

IHW50N65R6 Reverse-Conducting IGBT Reverse-Conducting IGBT with monolithic body diode Features • • • • • • • • Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/ Easy parallel switching capability due to positive temperature coefficient in VCEsat High ruggedness and stable temperature behavior Low EMI Pb-free lead plating; RoHS compliant Very low VCEsat and low Eoff Very tight parameter distribution Powerful monolithic reverse-conducting diode with low forward voltage G Potential applications • Induction Cooking • Microwave Ovens C E Product validation • Product Validation: Qualified for industrial applications according to the relevant tests of JEDEC47/20/22 Description C G E Type Package Marking IHW50N65R6 PG-TO247-3 H50ER6 Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document Revision 1.20 2021-03-23 IHW50N65R6 Reverse-Conducting IGBT Table of contents Table of contents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 IGBT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 3 Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 4 Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 6 Testing conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Datasheet 2 Revision 1.20 2021-03-23 IHW50N65R6 Reverse-Conducting IGBT 1 Package 1 Package Table 1 Characteristic values Parameter Symbol Note or test condition Values Min. Internal emitter inductance measured 5mm. (0.197in) from case LE Storage temperature Tstg Thermal resistance, junction-ambient 2 13.0 -55 °C 260 °C M 0.6 Nm Rth(j-a) 40 K/W wave soldering 1.6mm (0.063in.) from case for 10s Maximum rated values Parameter Symbol Note or test condition Collector-emitter voltage VCE DC collector current, limited by Tvjmax IC Pulsed collector current, tp limited by Tvjmax ICpuls Turn-off safe operating area Values Unit 650 V TC = 25 °C 100 A TC = 100 °C 65 Tvj ≥ 25 °C 150 A 150 A ±20 V ±30 V TC = 25 °C 251 W TC = 100 °C 125 VCE ≤ 650 V, tP ≤ 1 µs, Tvj ≤ 175 °C Gate-emitter voltage VGE Transient gate-emitter voltage VGE Power dissipation Ptot tp = 10 µs, D < 0.010 Characteristic values Parameter Symbol Note or test condition Values Min. Collector-emitter breakdown voltage VBRCES IC = 0.2 mA, VGE = 0 V Collector-emitter saturation voltage VCE sat IC = 50.0 A, VGE = 15 V Datasheet nH IGBT Table 2 Table 3 Max. 150 Soldering temperature Mounting torque , M3 screw Maximum of mounting process: 3 Typ. Unit 3 Typ. Unit Max. 650 V Tvj = 25 °C 1.30 Tvj = 175 °C 1.55 1.60 V Revision 1.20 2021-03-23 IHW50N65R6 Reverse-Conducting IGBT 2 IGBT Table 3 Characteristic values (continued) Parameter Symbol Note or test condition Values Unit Min. Typ. Max. 3.20 4.00 4.80 V 40 µA 100 nA Gate-emitter threshold voltage VGEth IC = 0.50 mA, VCE = VGE Zero gate voltage collector current ICES VCE = 650 V, VGE = 0 V Gate-emitter leakage current IGES VCE = 0 V, VGE = 20 V Transconductance gfs IC = 50.0 A, VCE = 20 V 114.0 S Input capacitance Cies VCE = 25 V, VGE = 0 V, f = 100 kHz 5000 pF Output capacitance Coes VCE = 25 V, VGE = 0 V, f = 100 kHz 49 pF Reverse transfer capacitance Cres VCE = 25 V, VGE = 0 V, f = 100 kHz 18 pF Gate charge QG IC = 50.0 A, VGE = 15 V, VCE = 520 V 199 nC Turn-on delay time tdon VCE = 400 V, VGE = 15 V, RGon = 10.0 Ω, RGoff = 10.0 Ω, Lσ = 70 nH, Cσ = 30 pF Tvj = 25 °C, IC = 50.0 A 21 ns Tvj = 175 °C, IC = 50.0 A 21 VCE = 400 V, VGE = 15 V, RGon = 10.0 Ω, RGoff = 10.0 Ω, Lσ = 70 nH, Cσ = 30 pF Tvj = 25 °C, IC = 50.0 A 25 Tvj = 175 °C, IC = 50.0 A 26 VCE = 400 V, VGE = 15 V, RGon = 10.0 Ω, RGoff = 10.0 Ω, Lσ = 70 nH, Cσ = 30 pF Tvj = 25 °C, IC = 50.0 A 261 Tvj = 175 °C, IC = 50.0 A 287 VCE = 400 V, VGE = 15 V, RGon = 10.0 Ω, RGoff = 10.0 Ω, Lσ = 70 nH, Cσ = 30 pF Tvj = 25 °C, IC = 50.0 A 14 Tvj = 175 °C, IC = 50.0 A 20 VCE = 400 V, VGE = 15 V, RGon = 10.0 Ω, RGoff = 10.0 Ω, Lσ = 70 nH, Cσ = 30 pF Tvj = 25 °C, IC = 50.0 A 1.50 Tvj = 175 °C, IC = 50.0 A 1.67 VCE = 400 V, VGE = 15 V, RGon = 10.0 Ω, RGoff = 10.0 Ω, Lσ = 70 nH, Cσ = 30 pF Tvj = 25 °C, IC = 50.0 A 0.66 Tvj = 175 °C, IC = 50.0 A 0.77 Rise time (inductive load) Turn-off delay time Fall time (inductive load) Turn-on energy Turn-off energy Datasheet Tvj = 25 °C Tvj = 175 °C tr tdoff tf Eon Eoff 4 1000 ns ns ns mJ mJ Revision 1.20 2021-03-23 IHW50N65R6 Reverse-Conducting IGBT 3 Diode Table 3 Characteristic values (continued) Parameter Symbol Note or test condition Values Min. Total switching energy Soft turn-off energy Eoff IGBT thermal resistance, junction-case Operating junction temperature 3 Ets Tvj = 25 °C, IC = 50.0 A 2.16 Tvj = 175 °C, IC = 50.0 A 2.44 VCE = 162 V, VGE = 15 V, Tvj = 25 °C, RGon = 10.0 Ω, IC = 50.0 A RGoff = 10.0 Ω, Cr = 30 nF, Tvj = 175 °C, Lσ = 70 nH, Cσ = 30 pF IC = 50.0 A 0.15 mJ -40 0.59 K/W 175 °C Maximum rated values Parameter Symbol Note or test condition Repetitive peak reverse voltage VRRM Diode forward current, limited by Tvjmax IF Diode pulsed current, limited by Tvjmax IFpuls Power dissipation Ptot Values Unit 650 V TC = 25 °C 39 A TC = 100 °C 24 Tvj ≥ 25 °C 150 A TC = 25 °C 59 W TC = 100 °C 29 Characteristic values Parameter Symbol Note or test condition Values Min. Diode forward voltage Reverse leakage current VF IR IF = 50.0 A VR = 650 V Max. Tvj = 25 °C 1.51 1.90 V Tvj = 175 °C 1.67 40 µA Tvj = 25 °C 5 Unit Typ. Tvj = 175 °C Datasheet mJ 0.30 Rthjc Tvj Max. Diode Table 4 Table 5 VCE = 400 V, VGE = 15 V, RGon = 10.0 Ω, RGoff = 10.0 Ω, Lσ = 70 nH, Cσ = 30 pF Typ. Unit 1000 Revision 1.20 2021-03-23 IHW50N65R6 Reverse-Conducting IGBT 3 Diode Table 5 Characteristic values (continued) Parameter Symbol Note or test condition Values Min. Diode reverse recovery time Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate off fall of reverse recovery current Diode thermal resistance, junction-case Operating junction temperature Datasheet trr Qrr Irrm dIrr/dt VR = 400 V VR = 400 V VR = 400 V VR = 400 V Tvj = 25 °C, IF = 50.0 A, -diF/dt = 1000 A/µs 108 Tvj = 175 °C, IF = 50.0 A, -diF/dt = 1000 A/µs 139 Tvj = 25 °C, IF = 50.0 A, -diF/dt = 1000 A/µs 2.50 Tvj = 175 °C, IF = 50.0 A, -diF/dt = 1000 A/µs 4.00 Tvj = 25 °C, IF = 50.0 A, -diF/dt = 1000 A/µs 37.0 Tvj = 175 °C, IF = 50.0 A, -diF/dt = 1000 A/µs 46.0 Tvj = 25 °C, IF = 50.0 A, -diF/dt = 1000 A/µs -843 Tvj = 175 °C, IF = 50.0 A, -diF/dt = 1000 A/µs -786 Rthjc Tvj -40 6 Typ. Unit Max. ns µC A A/µs 2.55 K/W 175 °C Revision 1.20 2021-03-23 IHW50N65R6 Reverse-Conducting IGBT 4 Characteristics diagrams 4 Characteristics diagrams Power dissipation as a function of case temperature, IGBT Ptot = f(Tc) Tvj≤175 °C Collector current as a function of case temperature, IGBT IC = f(Tc) Tvj≤175 °C, VGE = 15 V 270 100 240 90 80 210 70 180 60 150 50 120 40 90 30 60 20 30 10 0 0 25 50 75 100 125 150 175 25 Typical output characteristic, IGBT IC = f(VCE) Tvj = 25 °C 75 100 125 150 175 Typical output characteristic, IGBT IC = f(VCE) Tvj = 175 °C 150 150 120 120 90 90 60 60 30 30 0 0 0.0 Datasheet 50 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 7 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Revision 1.20 2021-03-23 IHW50N65R6 Reverse-Conducting IGBT 4 Characteristics diagrams Typical transfer characteristic, IGBT IC = f(VGE) VCE = 20 V Typical collector-emitter saturation voltage as a function of junction temperature, IGBT VCEsat = f(Tvj) VGE = 15 V 150 2.00 135 1.75 120 105 1.50 90 1.25 75 60 1.00 45 30 0.75 15 0.50 0 0 1 2 3 4 5 6 7 25 8 Typical switching times as a function of collector current, IGBT t = f(IC) RGoff = 10.0 Ω, VCE = 400 V, Tvj = 175 °C, VGE = 0/15 V, RGon = 10.0 Ω 50 75 100 125 150 175 Typical switching times as a function of gate resistor, IGBT t = f(RG) IC = 50.0 A, VCE = 400 V, Tvj = 175 °C, VGE = 0/15 V 1000 1000 100 100 10 10 1 1 0 Datasheet 30 60 90 120 150 0 8 10 20 30 40 50 60 70 80 Revision 1.20 2021-03-23 IHW50N65R6 Reverse-Conducting IGBT 4 Characteristics diagrams Typical switching times as a function of junction temperature, IGBT t = f(Tvj) IC = 50.0 A, RGoff = 10.0 Ω, VCE = 400 V, VGE = 0/15 V, RGon = 10.0 Ω 1000 Gate-emitter threshold voltage as a function of junction temperature, IGBT VGEth = f(Tvj) IC = 0.50 mA 6 5 100 4 3 10 2 1 1 0 25 50 75 100 125 150 175 25 Typical switching energy losses as a function of collector current, IGBT E = f(IC) RGoff = 10.0 Ω, VCE = 400 V, Tvj = 175 °C, VGE = 0/15 V, RGon = 10.0 Ω 7 6 6 5 5 4 4 3 3 2 2 1 1 100 125 150 0 0 Datasheet 75 Typical switching energy losses as a function of gate resistor, IGBT E = f(RG) IC = 50.0 A, VCE = 400 V, Tvj = 175 °C, VGE = 0/15 V 7 0 50 20 40 60 80 100 0 9 10 20 30 40 50 60 70 80 Revision 1.20 2021-03-23 IHW50N65R6 Reverse-Conducting IGBT 4 Characteristics diagrams Typical switching energy losses as a function of junction temperature, IGBT E = f(Tvj) IC = 50.0 A, RGoff = 10.0 Ω, VCE = 400 V, VGE = 0/15 V, RGon = 10.0 Ω 3.0 Typical soft-switching turn-off energy loss as a function of collector current, IGBT E = f(IC) RGoff = 10.0 Ω, Tvj = 175 °C, VGE = 0/15 V 1.5 1.4 2.5 1.2 1.1 2.0 1.0 0.8 1.5 0.7 0.5 1.0 0.4 0.3 0.5 0.1 0.0 25 50 75 100 125 150 0.0 175 0 Typical gate charge, IGBT VGE = f(QGE) IC = 50.0 A 10 20 30 40 50 60 70 80 90 100 Typical capacitance as a function of collector-emitter voltage, IGBT C = f(VCE) f = 100 kHz, VGE = 0 V 16 14 10000 12 1000 10 8 100 6 4 10 2 0 1 0 Datasheet 40 80 120 160 200 0 10 5 10 15 20 25 30 Revision 1.20 2021-03-23 IHW50N65R6 Reverse-Conducting IGBT 4 Characteristics diagrams IGBT transient thermal resistance, IGBT Zth = f(tp) D = tp/T Diode transient thermal impedance as a function of pulse width, Diode Zth = f(tp) D = tp/T 1 10 1 0.1 0.1 0.01 0.01 0.001 0.001 1E-6 1E-5 0.0001 0.001 0.01 0.0001 1E-8 0.1 Typical reverse recovery time as a function of diode current slope, Diode trr = f(diF/dt) IF = 50.0 A, VR = 400 V 350 1E-7 1E-6 1E-5 0.0001 0.001 0.01 0.1 Typical reverse recovery charge as a function of diode current slope, Diode Qrr = f(diF/dt) VR = 400 V, IF = 50.0 A 6 300 5 250 4 200 3 150 2 100 1 50 0 0 500 Datasheet 600 700 800 900 1000 1100 1200 1300 500 11 600 700 800 900 1000 1100 1200 1300 Revision 1.20 2021-03-23 IHW50N65R6 Reverse-Conducting IGBT 4 Characteristics diagrams Typical reverse recovery current as a function of diode current slope, Diode Irr = f(diF/dt) VR = 400 V, IF = 50.0 A Typical diode peak rate of fall of reverse recovery current as a function of diode current slope, Diode dIrr/dt = f(diF/dt) VR = 400 V, IF = 50.0 A 70 0 60 -200 50 -400 40 -600 30 -800 20 -1000 10 -1200 0 500 600 700 800 900 -1400 500 1000 1100 1200 1300 600 700 800 900 1000 1100 1200 1300 Typical diode forward current as a function of forward Typical diode forward voltage as a function of voltage, Diode junction temperature, Diode IF = f(VF) VF = f(Tvj) 150 2.00 1.75 120 1.50 90 1.25 60 1.00 30 0.75 0.50 0 0.0 Datasheet 0.5 1.0 1.5 2.0 2.5 3.0 3.5 25 4.0 12 50 75 100 125 150 175 Revision 1.20 2021-03-23 IHW50N65R6 Reverse-Conducting IGBT 5 Package outlines 5 Package outlines Package Drawing PG-TO247-3 DIMENSIONS A A1 A2 b b1 b2 c D D1 D2 E E1 E2 E3 e L L1 P Q S MILLIMETERS MIN. MAX. 4.70 5.30 2.20 2.60 1.50 2.50 1.00 1.40 1.60 2.41 2.57 3.43 0.89 0.38 21.50 20.70 17.65 13.08 1.35 0.51 16.30 15.50 14.15 12.38 5.10 3.40 2.60 1.00 5.44 20.40 19.80 4.50 3.85 3.70 3.50 6.25 5.35 6.30 6.04 DOCUMENT NO. Z8B00003327 REVISION 06 SCALE 3:1 0 1 2 3 4 5mm EUROPEAN PROJECTION ISSUE DATE 25.07.2018 Figure 6 Datasheet 13 Revision 1.20 2021-03-23 IHW50N65R6 Reverse-Conducting IGBT 6 Testing conditions 6 Testing conditions VGE(t) I,V 90% VGE t rr = t a + t b Q rr = Q a + Q b dIF/dt a 10% VGE b t Qa IC(t) Qb dI 90% IC 90% IC 10% IC 10% IC Figure C. Definition of diode switching characteristics t VCE(t) t td(off) tf td(on) t tr Figure A. VGE(t) 90% VGE Figure D. 10% VGE t IC(t) CC 2% IC t Figure E. Dynamic test circuit Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor Cr, (only for ZVT switching) VCE(t) t2 E off = t4 VCE x IC x dt E t1 t1 t2 t3 on = VCE x IC x d t 2% VCE t3 t4 t Figure B. Figure 7 Datasheet 14 Revision 1.20 2021-03-23 IHW50N65R6 Reverse-Conducting IGBT Revision history Revision history Revision Date of release Description of changes 1.00 2020.12.21 Final datasheet 1.10 2021.02.22 Soft turn-off energy data changed. Editorial changes in graph. 1.20 2021.03.21 Dynamic characteristic change from 1000 kHz to 100 kHz Datasheet 15 Revision 1.20 2021-03-23 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2021-03-23 Published by Infineon Technologies AG 81726 Munich, Germany © 2021 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX- IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.