IKB20N60TAATMA1

IGBT LowLossDuoPack:IGBTinTrenchStop®andFieldstoptechnology withsoft,fastrecoveryanti-parallelEmitterControlleddiode IKB20N60TA 600Vlowlossswitchingseriesthirdgeneration Datasheet IndustrialPowerControl IKB20N60TA TrenchStop®series LowLossDuoPack:IGBTinTrenchStop®andFieldstoptechnology withsoft,fastrecoveryanti-paralleldiode  Features: C •AutomotiveAECQ101qualified •DesignedforDC/ACconvertersforAutomotiveApplication •VerylowVCE(sat)1.5V(typ.) •MaximumJunctionTemperature150°C •Shortcircuitwithstandtime5µs •TRENCHSTOPTMandFieldstoptechnologyfor600V applicationsoffers: -verytightparameterdistribution -highruggedness,temperaturestablebehavior -veryhighswitchingspeed •PositivetemperaturecoefficientinVCE(sat) •LowEMI •LowGateCharge •GreenPackage G E C G E KeyPerformanceandPackageParameters Type IKB20N60TA VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package 600V 20A 1.5V 150°C K20T60A PG-TO263-3 2 Rev.2.2,2013-08-21 IKB20N60TA TrenchStop®series TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 3 Rev.2.2,2013-08-21 IKB20N60TA TrenchStop®series Maximumratings Parameter Symbol Value Unit Collector-emittervoltage,Tvj≥25°C VCE 600 V DCcollectorcurrent,limitedbyTvjmax TC=25°C TC=100°C IC 40.0 20.0 A ICpuls 60.0 A TurnoffsafeoperatingareaVCE≤600V,Tvj≤150°C  - 60.0 A Diodeforwardcurrent,limitedbyTvjmax TC=25°C TC=100°C IF 40.0 20.0 A Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 60.0 A Gate-emitter voltage VGE ±20 V Short circuit withstand time VGE=15.0V,VCC≤400V Allowed number of short circuits < 1000 Time between short circuits: ≥ 1.0s Tvj=150°C tSC PowerdissipationTC=25°C Ptot 156.0 W Operating junction temperature Tvj -40...+150 °C Storage temperature Tstg -40...+150 °C Pulsedcollectorcurrent,tplimitedbyTvjmax 1) µs 5 Soldering temperature, reflow soldering (MSL1 according to JEDEC J-STA-020) °C 260 ThermalResistance Parameter Characteristic Symbol Conditions Max.Value Unit IGBT thermal resistance, junction - case Rth(j-c) 0.90 K/W Diode thermal resistance, junction - case Rth(j-c) 1.50 K/W Thermal resistance, min. footprint junction - ambient Rth(j-a) 65 K/W Thermal resistance, 6cm² Cu on PCB junction - ambient Rth(j-a) 40 K/W 1) tp≤1µs 4 Rev.2.2,2013-08-21 IKB20N60TA TrenchStop®series ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. 600 - - V VGE=15.0V,IC=20.0A Tvj=25°C Tvj=150°C - 1.50 1.85 2.05 - V - 1.65 1.65 2.05 - V 4.1 4.9 5.7 V StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA Collector-emitter saturation voltage VCEsat Diode forward voltage VF VGE=0V,IF=20.0A Tvj=25°C Tvj=150°C Gate-emitter threshold voltage VGE(th) IC=0.29mA,VCE=VGE Zero gate voltage collector current ICES VCE=600V,VGE=0V Tvj=25°C Tvj=150°C - - Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=20.0A - 11.0 - S Integrated gate resistor rG 40.0 µA 1500.0 Ω none ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. - 1100 - - 71 - - 32 - - 120.0 - nC - 7.0 - nH - A DynamicCharacteristic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG Internal emitter inductance measured 5mm (0.197 in.) from case LE Short circuit collector current Max. 1000 short circuits IC(SC) Time between short circuits: ≥ 1.0s VCE=25V,VGE=0V,f=1MHz VCC=480V,IC=20.0A, VGE=15V VGE=15.0V,VCC≤400V, tSC≤5µs Tvj=150°C 5 - pF 183 Rev.2.2,2013-08-21 IKB20N60TA TrenchStop®series SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 18 - ns - 14 - ns - 199 - ns - 42 - ns - 0.31 - mJ - 0.46 - mJ - 0.77 - mJ - 41 - ns - 0.31 - µC - 13.3 - A - 711 - A/µs IGBTCharacteristic,atTvj=25°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Tvj=25°C, VCC=600V,IC=20.0A, VGE=0.0/15.0V, rG=12.0Ω,Lσ=131nH, Cσ=31pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. DiodeCharacteristic,atTvj=25°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Tvj=25°C, VR=600V, IF=20.0A, diF/dt=880A/µs dirr/dt SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 18 - ns - 17 - ns - 217 - ns - 70 - ns - 0.47 - mJ - 0.60 - mJ - 1.07 - mJ - 201 - ns - 1.28 - µC - 16.6 - A - 481 - A/µs IGBTCharacteristic,atTvj=150°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Tvj=150°C, VCC=600V,IC=20.0A, VGE=0.0/15.0V, rG=12.0Ω,Lσ=131nH, Cσ=31pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. DiodeCharacteristic,atTvj=150°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Tvj=150°C, VR=600V, IF=20.0A, diF/dt=800A/µs dirr/dt 6 Rev.2.2,2013-08-21 IKB20N60TA TrenchStop®series 70 TC=80° 100 TC=80° 60 TC=110° 50 IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] TC=110° 40 30 20 10 tp=1µs 2µs 10µs 50µs 1 1ms 10ms DC 10 0 10 100 1000 1E+4 1E+5 0.1 1E+6 1 f,SWITCHINGFREQUENCY[Hz] Figure 1. Collectorcurrentasafunctionofswitching frequency (Tj≤150°C,D=0.5,VCE=400V,VGE=15/0V, RG=12Ω) 1000 30 120 25 IC,COLLECTORCURRENT[A] Ptot,POWERDISSIPATION[W] 100 Figure 2. Safeoperatingarea (D=0,TC=25°C,Tj≤150°C;VGE=15V) 140 100 80 60 40 20 15 10 5 20 0 10 VCE,COLLECTOR-EMITTERVOLTAGE[V] 25 50 75 100 125 0 150 TC,CASETEMPERATURE[°C] 25 50 75 100 125 150 TC,CASETEMPERATURE[°C] Figure 3. Powerdissipationasafunctionofcase temperature (Tj≤150°C) Figure 4. Collectorcurrentasafunctionofcase temperature (VGE≥15V,Tj≤150°C) 7 Rev.2.2,2013-08-21 IKB20N60TA TrenchStop®series 60 60 VGE=20V VGE=20V 17V 17V 50 15V 13V IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 50 11V 40 9V 7V 30 20 10 0 15V 13V 11V 40 9V 7V 30 20 10 0 1 2 3 0 4 0 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 5. Typicaloutputcharacteristic (Tj=25°C) 3 4 3.0 VCE(sat),COLLECTOR-EMITTERSATURATION[A] 25°C Tj=150°C 35 IC,COLLECTORCURRENT[A] 2 Figure 6. Typicaloutputcharacteristic (Tj=150°C) 40 30 25 20 15 10 5 0 1 VCE,COLLECTOR-EMITTERVOLTAGE[V] 0 2 4 6 8 IC=10A IC=20A IC=40A 2.5 2.0 1.5 1.0 0.5 0.0 10 VGE,GATE-EMITTERVOLTAGE[V] 0 50 100 150 Tj,JUNCTIONTEMPERATURE[°C] Figure 7. Typicaltransfercharacteristic (VCE=10V) Figure 8. Typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature (VGE=15V) 8 Rev.2.2,2013-08-21 IKB20N60TA TrenchStop®series 1000 1000 td(off) tf td(on) tr t,SWITCHINGTIMES[ns] t,SWITCHINGTIMES[ns] td(off) tf td(on) tr 100 10 1 0 5 10 15 20 25 30 35 100 10 40 0 10 IC,COLLECTORCURRENT[A] Figure 9. Typicalswitchingtimesasafunctionof collectorcurrent (inductiveload,Tj=150°C,VCE=400V, VGE=15/0V,RG=12Ω,Dynamictestcircuitin Figure E) 40 50 60 70 7 typ. VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V] td(off) tf td(on) tr t,SWITCHINGTIMES[ns] 30 Figure 10. Typicalswitchingtimesasafunctionofgate resistor (inductiveload,Tj=150°C,VCE=400V, VGE=15/0V,IC=20A,Dynamictestcircuitin Figure E) 1000 100 10 20 RG,GATERESISTOR[Ω] 25 50 75 100 125 5 4 3 2 1 0 -50 150 TG,JUNCTIONTEMPERATURE[°C] Figure 11. Typicalswitchingtimesasafunctionof junctiontemperature (inductiveload,VCE=400V,VGE=15/0V, IC=20A,RG=12Ω,Dynamictestcircuitin Figure E) 6 0 50 100 150 TG,JUNCTIONTEMPERATURE[°C] Figure 12. Gate-emitterthresholdvoltageasafunction ofjunctiontemperature (IC=0.29mA) 9 Rev.2.2,2013-08-21 IKB20N60TA TrenchStop®series 2.4 2.0 Eoff Eon* Ets* E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] 2.4 1.6 1.2 0.8 0.4 0.0 0 5 10 15 20 25 30 35 2.0 1.6 1.2 0.8 0.4 0.0 40 Eoff Eon* Ets* 0 10 IC,COLLECTORCURRENT[A] 20 30 40 50 60 70 RG,GATERESISTOR[Ω] Figure 13. Typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload,Tj=150°C,VCE=400V, VGE=15/0V,RG=12Ω,Dynamictestcircuitin Figure E) Figure 14. Typicalswitchingenergylossesasa functionofgateresistor (inductiveload,Tj=150°C,VCE=400V, VGE=15/0V,IC=20A,Dynamictestcircuitin Figure E) 1.2 1.6 Eoff Eon* Ets* E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] 1.4 1.0 0.8 0.6 0.4 0.2 1.2 Eoff Eon* Ets* 1.0 0.8 0.6 0.4 0.2 0.0 25 50 75 100 125 0.0 300 150 Tj,JUNCTIONTEMPERATURE[°C] Figure 15. Typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload,VCE=400V,VGE=15/0V, IC=20A,RG=12Ω,Dynamictestcircuitin Figure E) 350 400 450 500 VCE,COLLECTOR-EMITTERVOLTAGE[V] 10 Figure 16. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload,Tj=150°C,VGE=15/0V, IC=20A,RG=12Ω,Dynamictestcircuitin Figure E) Rev.2.2,2013-08-21 IKB20N60TA TrenchStop®series 20 Ciss Coss Crss 1000 15 C,CAPACITANCE[pF] VGE,GATE-EMITTERVOLTAGE[V] 120V 480V 10 100 5 0 0 25 50 75 100 125 10 150 0 QGE,GATECHARGE[nC] Figure 17. Typicalgatecharge (IC=20A) 30 40 50 12 300 tSC,SHORTCIRCUITWITHSTANDTIME[µs] IC(SC),SHORTCIRCUITCOLLECTORCURRENT[A] 20 Figure 18. Typicalcapacitanceasafunctionof collector-emittervoltage (VGE=0V,f=1MHz) 350 250 200 150 100 50 0 10 VCE,COLLECTOR-EMITTERVOLTAGE[V] 12 14 16 18 10 8 6 4 2 0 20 VGE,GATE-EMITTERVOLTAGE[V] 10 11 12 13 14 15 VGE,GATE-EMITTERVOLTAGE[V] Figure 19. Typicalshortcircuitcollectorcurrentasa functionofgate-emittervoltage (VCE≤400V,Tj≤150°C) Figure 20. Shortcircuitwithstandtimeasafunctionof gate-emittervoltage (VCE=400V,startatTj=25°C,Tjmax≤150°C) 11 Rev.2.2,2013-08-21 IKB20N60TA TrenchStop®series ZthJC,TRANSIENTTHERMALRESISTANCE[K/W] ZthJC,TRANSIENTTHERMALRESISTANCE[K/W] 1 0.1 D=0.5 0.2 0.1 0.05 0.02 0.01 single pulse 0.01 i: 1 2 3 4 ri[K/W]: 0.07041 0.30709 0.3199 0.18715 τi[s]: 9.6E-5 6.8E-4 0.0108462 0.0692548 0.001 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 0.01 i: 1 2 3 4 ri[K/W]: 0.33997 0.44456 0.58146 0.13483 τi[s]: 1.3E-4 1.5E-3 0.0182142 0.0920745 0.001 1E-7 1 D=0.5 0.2 0.1 0.05 0.02 0.01 single pulse 0.1 tp,PULSEWIDTH[s] 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 tp,PULSEWIDTH[s] Figure 21. IGBTtransientthermalresistanceasa functionofpulsewidthfordifferentduty cyclesD (D=tp/T) Figure 22. Diodetransientthermalimpedanceasa functionofpulsewidthfordifferentduty cyclesD (D=tp/T) 300 1.6 Tj=25°C, IF = 30A Tj=150°C, IF = 30A Tj=25°C, IF = 30A Tj=150°C, IF = 30A 1.4 Qrr,REVERSERECOVERYCHARGE[µC] trr,REVERSERECOVERYTIME[ns] 250 200 150 100 50 1.2 1.0 0.8 0.6 0.4 0.2 0 600 900 1200 1500 diF/dt,DIODECURRENTSLOPE[A/µs] 0.0 600 900 1200 1500 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 23. Typicalreverserecoverytimeasafunction ofdiodecurrentslope (VR=400V,DynamictestcircuitinFigureE) 12 Figure 24. Typicalreverserecoverychargeasa functionofdiodecurrentslope (VR=400V,DynamictestcircuitinFigureE) Rev.2.2,2013-08-21 IKB20N60TA TrenchStop®series 25 0 Tj=25°C, IF = 30A Tj=150°C, IF = 30A -150 20 dIrr/dt,diodepeakrateoffallofIrr[A/µs] Irr,REVERSERECOVERYCURRENT[A] Tj=25°C, IF = 30A Tj=150°C, IF = 30A 15 10 5 0 600 900 1200 -300 -450 -600 -750 -900 600 1500 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 25. Typicalreverserecoverycurrentasa functionofdiodecurrentslope (VR=400V,DynamictestcircuitinFigureE) 1500 2.5 Tj=25°C Tj=150°C IC=10A IC=20A IC=40A 50 2.0 VF,FORWARDVOLTAGE[V] IF,FORWARDCURRENT[A] 1200 Figure 26. Typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope (VR=400V,DynamictestcircuitinFigureE) 60 40 30 20 1.5 1.0 0.5 10 0 900 diF/dt,DIODECURRENTSLOPE[A/µs] 0.0 0.5 1.0 1.5 2.0 0.0 2.5 VF,FORWARDVOLTAGE[V] 0 50 100 150 Tj,JUNCTIONTEMPERATURE[°C] Figure 27. Typicaldiodeforwardcurrentasafunction offorwardvoltage 13 Figure 28. Typicaldiodeforwardvoltageasafunction ofjunctiontemperature Rev.2.2,2013-08-21 IKB20N60TA TrenchStop®series PG-TO263-3 MIN 4.30 0.00 0.65 0.95 0.33 1.17 8.51 7.10 9.80 6.50 MAX 4.57 0.25 0.85 1.15 0.65 1.40 9.45 7.90 10.31 8.60 MIN 0.169 0.000 0.026 0.037 0.013 0.046 0.335 0.280 0.386 0.256 2.54 5.08 2 14.61 2.29 0.70 1.00 16.05 9.30 4.50 10.70 3.65 1.25 MAX 0.180 0.010 0.033 0.045 0.026 0.055 0.372 0.311 0.406 0.339 Z8B00003324 0 0 5 5 0.100 0.200 2 15.88 3.00 1.60 1.78 16.25 9.50 4.70 10.90 3.85 1.45 0.575 0.090 0.028 0.039 0.632 0.366 0.177 0.421 0.144 0.049 14 7.5mm 0.625 0.118 0.063 0.070 0.640 0.374 0.185 0.429 0.152 0.057 30-08-2007 01 Rev.2.2,2013-08-21 IKB20N60TA TrenchStop®series a a b b t 15 Rev.2.2,2013-08-21 IKB20N60TA TrenchStop®series RevisionHistory IKB20N60TA Revision:2013-08-21,Rev.2.2 Previous Revision Revision Date Subjects (major changes since last revision) 0.1 2009-06-03 - 1.0 2009-07-23 - 2.0 2010-03-22 - 2.1 2010-03-22 - 2.2 2013-08-21 Minor changes WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall? Yourfeedbackwillhelpustocontinuouslyimprovethequalityofthisdocument. Pleasesendyourproposal(includingareferencetothisdocument)to:erratum@infineon.com Publishedby InfineonTechnologiesAG 81726Munich,Germany 81726München,Germany ©2013InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics. Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingthe applicationofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind, includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandprices,pleasecontactthenearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesin question,pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystems and/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineon Technologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support, automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Life supportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustain and/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybe endangered. 16 Rev.2.2,2013-08-21