IKD03N60RFAATMA1

IGBT IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage IKD03N60RFA TRENCHSTOPTMRC-Seriesforhardswitchingapplicationsupto30kHz Datasheet IndustrialPowerControl IKD03N60RFA TRENCHSTOPTMRC-DrivesFastSeries IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage  Features: C TRENCHSTOPTMReverseConducting(RC)technologyfor600V applicationsoffering •OptimizedEon,EoffandQrrforlowswitchinglosses •Operatingrangeof4to30kHz •SmoothswitchingperformanceleadingtolowEMIlevels •Verytightparameterdistribution •Maximumjunctiontemperature175°C •Shortcircuitcapabilityof5µs •Bestinclasscurrentversuspackagesizeperformance •QualifiedaccordingtoAEC-Q101 •Pb-freeleadplating;RoHScompliant(soldertemperature 260°C,MSL1) G E C CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ G E Applications: •Smalldrives •Piezoinjection •Automotivelighting/HID KeyPerformanceandPackageParameters Type IKD03N60RFA VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package 600V 2.5A 2.2V 175°C K03DRFA PG-TO252-3 2 Rev.2.1,2014-12-15 IKD03N60RFA TRENCHSTOPTMRC-DrivesFastSeries TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 3 Rev.2.1,2014-12-15 IKD03N60RFA TRENCHSTOPTMRC-DrivesFastSeries MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Collector-emittervoltage,Tvj≥25°C VCE 600 V DCcollectorcurrent,limitedbyTvjmax TC=25°C TC=100°C IC 5.0 2.5 A Pulsedcollectorcurrent,tplimitedbyTvjmax1) ICpuls 7.5 A Turn off safe operating area VCE≤600V,Tvj≤175°C,tp=1µs1) - 7.5 A Diodeforwardcurrent,limitedbyTvjmax TC=25°C TC=100°C IF 5.0 2.5 A Diodepulsedcurrent,tplimitedbyTvjmax1) IFpuls 7.5 A Gate-emitter voltage VGE ±20 V Short circuit withstand time VGE=15.0V,VCC≤400V Allowed number of short circuits < 1000 Time between short circuits: ≥ 1.0s Tvj=150°C tSC PowerdissipationTC=25°C Ptot 53.6 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C µs 5 Soldering temperature, reflow soldering (MSL1 according to JEDEC J-STA-020) °C 260 ThermalResistance Parameter Characteristic Symbol Conditions Max.Value Unit IGBT thermal resistance,2) junction - case Rth(j-c) 2.80 K/W Diode thermal resistance,3) junction - case Rth(j-c) 6.80 K/W Thermal resistance, min. footprint junction - ambient Rth(j-a) 75 K/W Thermal resistance, 6cm² Cu on PCB junction - ambient Rth(j-a) 50 K/W 1) 2) 3) Defined by design. Not subject to production test. Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the IGBT, is not possible using a thermocouple. Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the Diode, is not possible using a thermocouple. 4 Rev.2.1,2014-12-15 IKD03N60RFA TRENCHSTOPTMRC-DrivesFastSeries ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. 600 - - V VGE=15.0V,IC=2.5A Tvj=25°C Tvj=175°C - 2.20 2.30 2.50 - V - 2.10 2.00 2.40 - V 4.3 5.0 5.7 V StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA Collector-emitter saturation voltage VCEsat Diode forward voltage VF VGE=0V,IF=2.5A Tvj=25°C Tvj=175°C Gate-emitter threshold voltage VGE(th) IC=0.05mA,VCE=VGE Zero gate voltage collector current ICES VCE=600V,VGE=0V Tvj=25°C Tvj=175°C - 120.0 40.0 - µA Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=10V,IC=2.5A - 1.3 - S Integrated gate resistor rG 1) Ω none ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. - 200 - - 13 - - 7 - - 17.1 - nC - 7.0 - nH - A DynamicCharacteristic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG Internal emitter inductance measured 5mm (0.197 in.) from case LE Short circuit collector current Max. 1000 short circuits IC(SC) Time between short circuits: ≥ 1.0s 1) VCE=25V,VGE=0V,f=1MHz VCC=480V,IC=2.5A, VGE=15V VGE=15.0V,VCC≤400V, tSC≤5µs Tvj=25°C - 23 pF TypicalvalueoftransconductancedeterminedatTvj=175°C. 5 Rev.2.1,2014-12-15 IKD03N60RFA TRENCHSTOPTMRC-DrivesFastSeries SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 10 - ns - 8 - ns - 128 - ns - 93 - ns - 0.05 - mJ IGBTCharacteristic,atTvj=25°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff - 0.04 - mJ Total switching energy Ets - 0.09 - mJ - 31 - ns - 0.06 - µC - 3.8 - A - -196 - A/µs Tvj=25°C, VCC=400V,IC=2.5A, VGE=0.0/15.0V, RG(on)=68.0Ω,RG(off)=68.0Ω, Lσ=60nH,Cσ=40pF Lσ,CσfromFig.E DiodeCharacteristic,atTvj=25°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Tvj=25°C, VR=400V, IF=2.5A, diF/dt=470A/µs dirr/dt SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 9 - ns - 9 - ns - 142 - ns - 123 - ns - 0.08 - mJ IGBTCharacteristic,atTvj=175°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff - 0.06 - mJ Total switching energy Ets - 0.14 - mJ - 66 - ns - 0.19 - µC - 6.2 - A - -125 - A/µs Tvj=175°C, VCC=400V,IC=2.5A, VGE=0.0/15.0V, RG(on)=68.0Ω,RG(off)=68.0Ω, Lσ=60nH,Cσ=40pF Lσ,CσfromFig.E DiodeCharacteristic,atTvj=175°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Tvj=175°C, VR=400V, IF=2.5A, diF/dt=470A/µs dirr/dt 6 Rev.2.1,2014-12-15 IKD03N60RFA TRENCHSTOPTMRC-DrivesFastSeries 2.5 10 IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 2.0 1.5 1.0 1 not for linear use 0.5 0.0 0.1 1 10 0.1 100 1 f,SWITCHINGFREQUENCY[kHz] 100 1000 Figure 2. Forwardbiassafeoperatingarea (D=0,TC=25°C,Tvj≤175°C,VGE=15V,tp=1µs) 60 6 50 5 IC,COLLECTORCURRENT[A] Ptot,POWERDISSIPATION[W] Figure 1. Collectorcurrentasafunctionofswitching frequency (Tvj≤175°C,Ta=55°C,D=0.5,VCE=400V, VGE=15/0V,rG=68Ω,PCBmounting,6cm2 Cu, Ptot=2,4W) 40 30 20 10 0 10 VCE,COLLECTOR-EMITTERVOLTAGE[V] 4 3 2 1 25 50 75 100 125 150 0 175 TC,CASETEMPERATURE[°C] 0 25 50 75 100 125 150 175 TC,CASETEMPERATURE[°C] Figure 3. Powerdissipationasafunctionofcase temperature (Tvj≤175°C) Figure 4. Collectorcurrentasafunctionofcase temperature (VGE≥15V,Tvj≤175°C) 7 Rev.2.1,2014-12-15 IKD03N60RFA TRENCHSTOPTMRC-DrivesFastSeries 9 9 VGE = 20V 8 17V 15V 13V 6 11V 9V 5 7V 4 3 13V 4 3 1 2 3 0 4 9V 7V 1 1 11V 5 2 0 15V 6 2 0 17V 7 IC,COLLECTORCURRENT[A] 7 IC,COLLECTORCURRENT[A] VGE = 20V 8 0 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 5. Typicaloutputcharacteristic (Tvj=25°C) 3 4 4.0 Tj = 25°C Tj = 175°C VCEsat,COLLECTOR-EMITTERSATURATION[V] 8 7 IC,COLLECTORCURRENT[A] 2 Figure 6. Typicaloutputcharacteristic (Tvj=175°C) 9 6 5 4 3 2 1 0 1 VCE,COLLECTOR-EMITTERVOLTAGE[V] 4 6 8 10 12 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 14 VGE,GATE-EMITTERVOLTAGE[V] IC = 0.6A IC = 1A IC = 2.5A IC = 5A 0 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 7. Typicaltransfercharacteristic (VCE=10V) Figure 8. Typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature (VGE=15V) 8 Rev.2.1,2014-12-15 IKD03N60RFA TRENCHSTOPTMRC-DrivesFastSeries td(off) tf td(on) tr 100 t,SWITCHINGTIMES[ns] t,SWITCHINGTIMES[ns] 100 td(off) tf td(on) tr 10 1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 10 1 4.0 10 20 30 IC,COLLECTORCURRENT[A] 40 50 60 70 80 90 100 110 120 rG,GATERESISTOR[Ω] Figure 9. Typicalswitchingtimesasafunctionof collectorcurrent (inductiveload,Tvj=175°C,VCE=400V, VGE=15/0V,rG=68Ω,Dynamictestcircuitin Figure E) Figure 10. Typicalswitchingtimesasafunctionofgate resistor (inductiveload,Tvj=175°C,VCE=400V, VGE=15/0V,IC=2,5A,Dynamictestcircuitin Figure E) 7 VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V] td(off) tf td(on) tr t,SWITCHINGTIMES[ns] 100 10 1 25 50 75 100 125 150 6 5 4 3 2 1 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 11. Typicalswitchingtimesasafunctionof junctiontemperature (inductiveload,VCE=400V,VGE=15/0V, IC=2,5A,rG=68Ω,Dynamictestcircuitin Figure E) typ. min. max. 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 12. Gate-emitterthresholdvoltageasafunction ofjunctiontemperature (IC=0,05mA) 9 Rev.2.1,2014-12-15 IKD03N60RFA TRENCHSTOPTMRC-DrivesFastSeries 0.25 0.20 Eoff Eon Ets 0.18 E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] Eoff Eon Ets 0.20 0.15 0.10 0.05 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0.00 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.00 4.0 10 20 30 IC,COLLECTORCURRENT[A] Figure 13. Typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload,Tvj=175°C,VCE=400V, VGE=15/0V,rG=68Ω,Dynamictestcircuitin Figure E) 60 70 80 90 100 110 120 0.18 Eoff Eon Ets 0.16 E,SWITCHINGENERGYLOSSES[mJ] 0.14 E,SWITCHINGENERGYLOSSES[mJ] 50 Figure 14. Typicalswitchingenergylossesasa functionofgateresistor (inductiveload,Tvj=175°C,VCE=400V, VGE=15/0V,IC=2,5A,Dynamictestcircuitin Figure E) 0.16 0.12 0.10 0.08 0.06 0.04 0.02 0.00 40 rG,GATERESISTOR[Ω] Eoff Eon Ets 0.14 0.12 0.10 0.08 0.06 0.04 0.02 25 50 75 100 125 150 0.00 200 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 15. Typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload,VCE=400V,VGE=15/0V, IC=2,5A,rG=68Ω,Dynamictestcircuitin Figure E) 250 300 350 400 450 500 VCE,COLLECTOR-EMITTERVOLTAGE[V] 10 Figure 16. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload,Tvj=175°C,VGE=15/0V, IC=2,5A,rG=68Ω,Dynamictestcircuitin Figure E) Rev.2.1,2014-12-15 IKD03N60RFA TRENCHSTOPTMRC-DrivesFastSeries 18 1000 VCC=120V VCC=480V 14 C,CAPACITANCE[pF] VGE,GATE-EMITTERVOLTAGE[V] 16 Cies Coes Cres 12 10 8 6 100 10 4 2 0 0 2 4 6 8 10 12 14 16 1 18 0 QGE,GATECHARGE[nC] Figure 17. Typicalgatecharge (IC=2,5A) 10 15 20 25 30 Figure 18. Typicalcapacitanceasafunctionof collector-emittervoltage (VGE=0V,f=1MHz) 50 12 45 tSC,SHORTCIRCUITWITHSTANDTIME[µs] IC(SC),SHORTCIRCUITCOLLECTORCURRENT[A] 5 VCE,COLLECTOR-EMITTERVOLTAGE[V] 40 35 30 25 20 15 10 10 8 6 4 2 5 0 12 13 14 15 16 17 18 19 0 20 VGE,GATE-EMITTERVOLTAGE[V] 10 11 12 13 14 15 16 17 18 19 VGE,GATE-EMITTERVOLTAGE[V] Figure 19. Typicalshortcircuitcollectorcurrentasa functionofgate-emittervoltage (VCE≤400V,startatTvj=25°C) Figure 20. Shortcircuitwithstandtimeasafunctionof gate-emittervoltage (VCE≤400V,startatTvj=150°C) 11 Rev.2.1,2014-12-15 IKD03N60RFA Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W] Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W] TRENCHSTOPTMRC-DrivesFastSeries 1 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.1 single pulse i: 1 2 3 4 5 6 7 ri[K/W]: 0.015751 1.14785 1.341315 0.237182 0.041914 6.2E-3 2.2E-3 τi[s]: 1.2E-5 2.3E-4 1.1E-3 6.0E-3 0.047561 0.288161 1.246755 0.01 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 D = 0.5 1 0.1 0.05 0.02 0.01 single pulse 0.1 i: 1 2 3 4 5 6 7 ri[K/W]: 0.600659 4.018125 1.846211 0.289559 0.043754 6.0E-3 2.1E-3 τi[s]: 4.2E-5 1.9E-4 1.1E-3 6.1E-3 0.048469 0.301349 1.300555 0.01 1E-7 1 0.2 1E-6 tp,PULSEWIDTH[s] 0.001 0.01 0.1 1 Figure 22. Diodetransientthermalimpedanceasa functionofpulsewidth(seepage43)) (D=tp/T) 80 0.20 Tj = 25°C, IF = 2.5A Tj = 175°C, IF = 2.5A 0.18 Qrr,REVERSERECOVERYCHARGE[µC] 70 trr,REVERSERECOVERYTIME[ns] 1E-4 tp,PULSEWIDTH[s] Figure 21. IGBTtransientthermalimpedanceasa functionofpulsewidth(seepage42)) (D=tp/T) 60 50 40 30 20 10 0 400 1E-5 0.16 0.14 Tj = 25°C, IF = 2.5A Tj = 175°C, IF = 2.5A 0.12 0.10 0.08 0.06 0.04 0.02 500 600 700 800 900 1000 diF/dt,DIODECURRENTSLOPE[A/µs] 0.00 400 500 600 700 800 900 1000 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 23. Typicalreverserecoverytimeasafunction ofdiodecurrentslope (VR=400V) 12 Figure 24. Typicalreverserecoverychargeasa functionofdiodecurrentslope (VR=400V) Rev.2.1,2014-12-15 IKD03N60RFA TRENCHSTOPTMRC-DrivesFastSeries 10 0 Tj = 25°C, IF = 2.5A Tj = 175°C, IF = 2.5A Tj = 25°C, IF = 2.5A Tj = 175°C, IF = 2.5A -100 dIrr/dt,diodepeakrateoffallofIrr[A/µs] Irr,REVERSERECOVERYCURRENT[A] 9 8 7 6 5 4 -200 -300 -400 -500 3 2 400 500 600 700 800 900 -600 400 1000 diF/dt,DIODECURRENTSLOPE[A/µs] 500 600 700 800 900 1000 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 25. Typicalreverserecoverycurrentasa functionofdiodecurrentslope (VR=400V) Figure 26. Typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope (VR=400V) 9 2.8 Tj = 25°C, VGE = 0V Tj = 175°C, VGE = 0V 8 2.6 2.4 VF,FORWARDVOLTAGE[V] IF,FORWARDCURRENT[A] 7 6 5 4 3 2.2 2.0 1.8 1.6 2 1.4 1 1.2 0 0 1 2 3 1.0 4 VF,FORWARDVOLTAGE[V] IF = 0.6A IF = 1A IF = 2.5A IF = 5A 0 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 27. Typicaldiodeforwardcurrentasafunction offorwardvoltage 13 Figure 28. Typicaldiodeforwardvoltageasafunction ofjunctiontemperature Rev.2.1,2014-12-15 IKD03N60RFA TRENCHSTOPTMRC-DrivesFastSeries PG - TO252 - 3 14 Rev.2.1,2014-12-15 IKD03N60RFA TRENCHSTOPTMRC-DrivesFastSeries VGE(t) I,V 90% VGE t rr = t a + t b Q rr = Q a + Q b dIF/dt a 10% VGE b t Qa IC(t) Qb dI 90% IC 90% IC 10% IC 10% IC Figure C. Definition of diode switching characteristics t VCE(t) t td(off) tf td(on) t tr Figure A. VGE(t) 90% VGE Figure D. 10% VGE t IC(t) CC 2% IC t Figure E. Dynamic test circuit Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor Cr, (only for ZVT switching) VCE(t) t2 E off = t4 VCE x IC x dt E t1 t1 on = VCE x IC x d t 2% VCE t3 t2 t3 t4 t Figure B. 15 Rev.2.1,2014-12-15 IKD03N60RFA TRENCHSTOPTM RC-Drives Fast Series Revision History IKD03N60RFA Revision: 2014-12-15, Rev. 2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2014-12-15 Final data sheet We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Published by Infineon Technologies AG 81726 Munich, Germany 81726 München, Germany © 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 16 Rev. 2.1, 2014-12-15