IKD03N60RFATMA1

IGBT IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage IKD03N60RF TRENCHSTOPTMRC-Seriesforhardswitchingapplicationsupto30kHz Datasheet IndustrialPowerControl IKD03N60RF TRENCHSTOPTMRC-DrivesFastSeries IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage  Features: C TRENCHSTOPTMReverseConducting(RC)technologyfor600V applicationsoffering •OptimizedEon,EoffandQrrforlowswitchinglosses •Operatingrangeof4to30kHz •SmoothswitchingperformanceleadingtolowEMIlevels •Verytightparameterdistribution •Maximumjunctiontemperature175°C •Shortcircuitcapabilityof5µs •Bestinclasscurrentversuspackagesizeperformance •QualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant(soldertemperature 260°C,MSL1) G E C CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ G Applications: E Domesticandindustrialdrives: •Compressors •Pumps •Fans KeyPerformanceandPackageParameters Type IKD03N60RF Datasheet www.infineon.com VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package 600V 2.5A 2.2V 175°C K03R60F PG-TO252-3 PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2.6 2016-05-10 IKD03N60RF TRENCHSTOPTMRC-DrivesFastSeries TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 Datasheet 3 V2.6 2016-05-10 IKD03N60RF TRENCHSTOPTMRC-DrivesFastSeries MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Collector-emittervoltage,Tvj≥25°C VCE 600 V DCcollectorcurrent,limitedbyTvjmax Tc=25°Cvaluelimitedbybondwire Tc=100°C IC 6.5 6.0 A Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 7.5 A Turn off safe operating area VCE≤600V,Tvj≤175°C,tp=1µs - 7.5 A Diodeforwardcurrent,limitedbyTvjmax Tc=25°C Tc=100°C IF 6.3 3.9 A Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 7.5 A Gate-emitter voltage VGE ±20 V Short circuit withstand time VGE=15.0V,VCC≤400V Allowed number of short circuits < 1000 Time between short circuits: ≥ 1.0s Tvj=150°C tSC PowerdissipationTc=25°C Ptot 53.6 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C µs 5 Soldering temperature, reflow soldering (MSL1 according to JEDEC J-STA-020) °C 260 ThermalResistance Parameter Symbol Conditions Value min. typ. max. Unit RthCharacteristics IGBT thermal resistance,1) junction - case Rth(j-c) - - 2.80 K/W Diode thermal resistance,2) junction - case Rth(j-c) - - 6.80 K/W Thermal resistance, min. footprint junction - ambient Rth(j-a) - - 75 K/W Thermal resistance, 6cm² Cu on PCB junction - ambient Rth(j-a) - - 50 K/W 1) 2) Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the IGBT, is not possible using a thermocouple. Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the Diode, is not possible using a thermocouple. Datasheet 4 V2.6 2016-05-10 IKD03N60RF TRENCHSTOPTMRC-DrivesFastSeries ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. 600 - - V VGE=15.0V,IC=2.5A Tvj=25°C Tvj=175°C - 2.20 2.30 2.50 - V - 2.10 2.00 2.40 - V 4.3 5.0 5.7 V VCE=600V,VGE=0V Tvj=25°C Tvj=175°C - - 40 1000 µA StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA Collector-emitter saturation voltage VCEsat Diode forward voltage VF VGE=0V,IF=2.5A Tvj=25°C Tvj=175°C Gate-emitter threshold voltage VGE(th) IC=0.05mA,VCE=VGE Zero gate voltage collector current1) ICES Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=2.5A - 1.3 - S Integrated gate resistor rG Ω none ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. - 200 - - 13 - - 7 - - 17.1 - nC - 7.0 - nH - A DynamicCharacteristic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG Internal emitter inductance measured 5mm (0.197 in.) from case LE Short circuit collector current Max. 1000 short circuits IC(SC) Time between short circuits: ≥ 1.0s VCE=25V,VGE=0V,f=1MHz VCC=480V,IC=2.5A, VGE=15V VGE=15.0V,VCC≤400V, tSC≤5µs Tvj=25°C - 23 pF SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 10 - ns - 8 - ns - 128 - ns - 93 - ns - 0.05 - mJ IGBTCharacteristic,atTvj=25°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff - 0.04 - mJ Total switching energy Ets - 0.09 - mJ 1) Tvj=25°C, VCC=400V,IC=2.5A, VGE=0.0/15.0V, RG(on)=68.0Ω,RG(off)=68.0Ω, Lσ=60nH,Cσ=40pF Lσ,CσfromFig.E Not subject to production test - verified by design/characterization Datasheet 5 V2.6 2016-05-10 IKD03N60RF TRENCHSTOPTMRC-DrivesFastSeries DiodeCharacteristic,atTvj=25°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Tvj=25°C, VR=400V, IF=2.5A, diF/dt=470A/µs dirr/dt - 31 - ns - 0.06 - µC - 3.8 - A - -196 - A/µs SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 9 - ns - 9 - ns - 142 - ns - 123 - ns - 0.08 - mJ IGBTCharacteristic,atTvj=175°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff - 0.06 - mJ Total switching energy Ets - 0.14 - mJ - 66 - ns - 0.19 - µC - 6.2 - A - -125 - A/µs Tvj=175°C, VCC=400V,IC=2.5A, VGE=0.0/15.0V, RG(on)=68.0Ω,RG(off)=68.0Ω, Lσ=60nH,Cσ=40pF Lσ,CσfromFig.E DiodeCharacteristic,atTvj=175°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Datasheet Tvj=175°C, VR=400V, IF=2.5A, diF/dt=470A/µs dirr/dt 6 V2.6 2016-05-10 IKD03N60RF TRENCHSTOPTMRC-DrivesFastSeries 2.5 10 IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 2.0 1.5 Ta=55°C 1.0 not for linear use 1 0.5 0.0 0.1 1 10 0.1 100 1 f,SWITCHINGFREQUENCY[kHz] 10 100 1000 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 1. Collectorcurrentasafunctionofswitching frequency (Tvj≤175°C,Ta=55°C,D=0.5,VCE=400V, VGE=0/15V,RG=68Ω,PCBmounting,6cm2 Cu, Ptot=2,4W) Figure 2. Forwardbiassafeoperatingarea (D=0,TC=25°C,Tvj≤175°C;VGE=15V) 60 7 6 50 IC,COLLECTORCURRENT[A] Ptot,POWERDISSIPATION[W] limited by bond wire 40 30 20 5 4 3 2 10 0 1 25 50 75 100 125 150 0 175 TC,CASETEMPERATURE[°C] Figure 3. Powerdissipationasafunctionofcase temperature (Tvj≤175°C) Datasheet 0 25 50 75 100 125 150 175 TC,CASETEMPERATURE[°C] Figure 4. Collectorcurrentasafunctionofcase temperature (VGE≥15V,Tvj≤175°C) 7 V2.6 2016-05-10 IKD03N60RF TRENCHSTOPTMRC-DrivesFastSeries 9 9 VGE = 20V 8 17V 15V 13V 6 11V 9V 5 7V 4 3 6 4 3 1 2 3 9V 7V 1 1 11V 5 2 0 15V 13V 2 0 17V 7 IC,COLLECTORCURRENT[A] 7 IC,COLLECTORCURRENT[A] VGE = 20V 8 0 4 0 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 5. Typicaloutputcharacteristic (Tvj=25°C) 3 4 4.0 Tvj = 25°C Tvj = 175°C 7 6 5 4 3 2 1 4 6 8 10 12 3.0 2.5 2.0 1.5 1.0 0.5 0.0 14 VGE,GATE-EMITTERVOLTAGE[V] Figure 7. Typicaltransfercharacteristic (VCE=10V) Datasheet IC = 0.6A IC = 1A IC = 2.5A IC = 5A 3.5 VCEsat,COLLECTOR-EMITTERSATURATION[V] 8 IC,COLLECTORCURRENT[A] 2 Figure 6. Typicaloutputcharacteristic (Tvj=175°C) 9 0 1 VCE,COLLECTOR-EMITTERVOLTAGE[V] 0 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 8. Typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature (VGE=15V) 8 V2.6 2016-05-10 IKD03N60RF TRENCHSTOPTMRC-DrivesFastSeries td(off) tf td(on) tr 100 t,SWITCHINGTIMES[ns] t,SWITCHINGTIMES[ns] 100 td(off) tf td(on) tr 10 1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 10 1 4.0 10 20 30 IC,COLLECTORCURRENT[A] 40 50 60 70 80 90 100 110 120 RG,GATERESISTANCE[Ω] Figure 9. Typicalswitchingtimesasafunctionof collectorcurrent (inductiveload,Tvj=175°C,VCE=400V, VGE=0/15V,RGon=68Ω,RGoff=68Ω,dynamic test circuit in Figure E) Figure 10. Typicalswitchingtimesasafunctionofgate resistance (inductiveload,Tvj=175°C,VCE=400V, VGE=0/15V,IC=2,5A,dynamictestcircuitin Figure E) 7 t,SWITCHINGTIMES[ns] 100 10 1 25 50 typ. min. max. VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V] td(off) tf td(on) tr 75 100 125 150 6 5 4 3 2 1 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 11. Typicalswitchingtimesasafunctionof junctiontemperature (inductiveload,VCE=400V,VGE=0/15V, IC=2,5A,RGon=68Ω,RGoff=68Ω,dynamictest circuit in Figure E) Datasheet 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 12. Gate-emitterthresholdvoltageasafunction ofjunctiontemperature (IC=0,05mA) 9 V2.6 2016-05-10 IKD03N60RF TRENCHSTOPTMRC-DrivesFastSeries 0.25 0.20 Eoff Eon Ets 0.18 0.20 E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] Eoff Eon Ets 0.15 0.10 0.05 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0.00 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.00 4.0 10 20 30 IC,COLLECTORCURRENT[A] Figure 13. Typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload,Tvj=175°C,VCE=400V, VGE=0/15V,RGon=68Ω,RGoff=68Ω,dynamic test circuit in Figure E) 60 70 80 90 100 110 120 0.18 Eoff Eon Ets 0.16 E,SWITCHINGENERGYLOSSES[mJ] 0.14 E,SWITCHINGENERGYLOSSES[mJ] 50 Figure 14. Typicalswitchingenergylossesasa functionofgateresistance (inductiveload,Tvj=175°C,VCE=400V, VGE=0/15V,IC=2,5A,dynamictestcircuitin Figure E) 0.16 0.12 0.10 0.08 0.06 0.04 0.02 0.00 40 RG,GATERESISTANCE[Ω] Eoff Eon Ets 0.14 0.12 0.10 0.08 0.06 0.04 0.02 25 50 75 100 125 150 175 0.00 200 Tvj,JUNCTIONTEMPERATURE[°C] Figure 15. Typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload,VCE=400V,VGE=0/15V, IC=2,5A,RGon=68Ω,RGoff=68Ω,dynamictest circuit in Figure E) Datasheet 250 300 350 400 450 500 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 16. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload,Tvj=175°C,VGE=0/15V, IC=2,5A,RGon=68Ω,RGoff=68Ω,dynamictest circuit in Figure E) 10 V2.6 2016-05-10 IKD03N60RF TRENCHSTOPTMRC-DrivesFastSeries 18 1000 VCC=120V VCC=480V 14 12 C,CAPACITANCE[pF] VGE,GATE-EMITTERVOLTAGE[V] 16 Cies Coes Cres 10 8 6 100 10 4 2 0 0 2 4 6 8 10 12 14 16 1 18 0 QGE,GATECHARGE[nC] Figure 17. Typicalgatecharge (IC=2,5A) 10 15 20 25 30 Figure 18. Typicalcapacitanceasafunctionof collector-emittervoltage (VGE=0V,f=1MHz) 50 12 45 tSC,SHORTCIRCUITWITHSTANDTIME[µs] IC(SC),SHORTCIRCUITCOLLECTORCURRENT[A] 5 VCE,COLLECTOR-EMITTERVOLTAGE[V] 40 35 30 25 20 15 10 10 8 6 4 2 5 0 12 13 14 15 16 17 18 19 0 20 VGE,GATE-EMITTERVOLTAGE[V] Figure 19. Typicalshortcircuitcollectorcurrentasa functionofgate-emittervoltage (VCE≤400V,startatTvj=25°C) Datasheet 10 11 12 13 14 15 16 17 18 19 VGE,GATE-EMITTERVOLTAGE[V] Figure 20. Shortcircuitwithstandtimeasafunctionof gate-emittervoltage (VCE≤400V,startatTvj=150°C) 11 V2.6 2016-05-10 IKD03N60RF Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W] Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W] TRENCHSTOPTMRC-DrivesFastSeries 1 D = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse 0.1 D = 0.5 1 0.1 0.05 0.02 0.01 single pulse 0.1 i: 1 2 3 4 5 6 7 ri[K/W]: 0.015751 1.14785 1.341315 0.237182 0.041914 6.2E-3 2.2E-3 τi[s]: 1.2E-5 2.3E-4 1.1E-3 6.0E-3 0.047561 0.288161 1.246755 0.01 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 0.2 i: 1 2 3 4 5 6 7 ri[K/W]: 0.600659 4.018125 1.846211 0.289559 0.043754 6.0E-3 2.1E-3 τi[s]: 4.2E-5 1.9E-4 1.1E-3 6.1E-3 0.048469 0.301349 1.300555 0.01 1E-7 1 1E-6 tp,PULSEWIDTH[s] 0.01 0.1 1 0.20 Tvj = 25°C, IF = 2.5A Tvj = 175°C, IF = 2.5A 0.18 Qrr,REVERSERECOVERYCHARGE[µC] 70 trr,REVERSERECOVERYTIME[ns] 0.001 Figure 22. Diodetransientthermalimpedanceasa functionofpulsewidth2)(seepage4) (D=tp/T) 80 60 50 40 30 20 10 0.16 0.14 Tvj = 25°C, IF = 2.5A Tvj = 175°C, IF = 2.5A 0.12 0.10 0.08 0.06 0.04 0.02 500 600 700 800 900 1000 0.00 400 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 23. Typicalreverserecoverytimeasafunction ofdiodecurrentslope (VR=400V) Datasheet 1E-4 tp,PULSEWIDTH[s] Figure 21. IGBTtransientthermalimpedanceasa functionofpulsewidth1)(seepage4) (D=tp/T) 0 400 1E-5 500 600 700 800 900 1000 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 24. Typicalreverserecoverychargeasa functionofdiodecurrentslope (VR=400V) 12 V2.6 2016-05-10 IKD03N60RF TRENCHSTOPTMRC-DrivesFastSeries 10 0 Tvj = 25°C, IF = 2.5A Tvj = 175°C, IF = 2.5A Tvj = 25°C, IF = 2.5A Tvj = 175°C, IF = 2.5A dIrr/dt,DIODEPEAKRATEOFFALLOFIrr[A/µs] Irr,REVERSERECOVERYCURRENT[A] 9 8 7 6 5 4 3 2 400 500 600 700 800 900 -100 -200 -300 -400 -500 -600 400 1000 diF/dt,DIODECURRENTSLOPE[A/µs] 500 600 700 800 900 1000 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 25. Typicalreverserecoverycurrentasa functionofdiodecurrentslope (VR=400V) Figure 26. Typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope (VR=400V) 9 2.8 Tvj = 25°C, VGE = 0V Tvj = 175°C, VGE = 0V 8 2.6 2.4 VF,FORWARDVOLTAGE[V] IF,FORWARDCURRENT[A] 7 6 5 4 3 2.2 2.0 1.8 1.6 2 1.4 1 1.2 0 0 1 2 3 1.0 4 VF,FORWARDVOLTAGE[V] Figure 27. Typicaldiodeforwardcurrentasafunction offorwardvoltage Datasheet IF = 0.6A IF = 1A IF = 2.5A IF = 5A 0 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 28. Typicaldiodeforwardvoltageasafunction ofjunctiontemperature 13 V2.6 2016-05-10 IKD03N60RF TRENCHSTOPTMRC-DrivesFastSeries Package Drawing PG-TO252-3 A A1 b b2 b3 c c2 D D1 E E1 e e1 N H L L3 L4 Datasheet DOCUMENT NO. Z8B00003328 MILLIMETERS DIM MIN 2.16 0.00 0.64 0.65 4,95 0.46 0.40 5.97 5.02 6.35 4.32 MAX 2.41 0.15 0.89 1.15 5.50 0.61 0.98 6.22 5.84 6.73 5.21 2.29 (BSC) 4.57 (BSC) SCALE 2.5 0 2.5 5mm EUROPEAN PROJECTION 3 9.40 1.18 0.89 0.51 0 ISSUE DATE 05-02-2016 10.48 1.78 1.27 1.02 REVISION 06 14 V2.6 2016-05-10 IKD03N60RF TRENCHSTOPTMRC-DrivesFastSeries Testing Conditions VGE(t) I,V 90% VGE t rr = t a + t b Q rr = Q a + Q b dIF/dt a 10% VGE b t Qa IC(t) Qb dI 90% IC 90% IC 10% IC 10% IC Figure C. Definition of diode switching characteristics t VCE(t) t td(off) tf td(on) t tr Figure A. VGE(t) 90% VGE Figure D. 10% VGE t IC(t) CC 2% IC t Figure E. Dynamic test circuit Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor Cr, (only for ZVT switching) VCE(t) t2 E off = t4 VCE x IC x dt E t1 t1 on = VCE x IC x d t 2% VCE t3 t2 t3 t4 t Figure B. Datasheet 15 V2.6 2016-05-10 IKD03N60RF TRENCHSTOPTMRC-DrivesFastSeries RevisionHistory IKD03N60RF Revision:2016-05-10,Rev.2.6 Previous Revision Revision Date Subjects (major changes since last revision) 1.1 2011-06-07 Preliminary Data sheet 2.2 2012-02-23 Final data sheet 2.3 2013-12-10 New value ICES max limit at 175°C 2.4 2014-02-26 Without PB free logo 2.5 2014-03-12 Storage temperature -55...+150°C 2.6 2016-05-10 New maximum values Ic(Tc), IF(Tc) and Figure 4 Datasheet 16 V2.6 2016-05-10 Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.     Publishedby InfineonTechnologiesAG 81726München,Germany ©InfineonTechnologiesAG2018. AllRightsReserved. ImportantNotice Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”).Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/orany informationregardingtheapplicationoftheproduct,InfineonTechnologiesherebydisclaimsanyandallwarrantiesand liabilitiesofanykind,includingwithoutlimitationwarrantiesofnon-infringementofintellectualpropertyrightsofanythird party. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseof theproductofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityof customer’stechnicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthe completenessoftheproductinformationgiveninthisdocumentwithrespecttosuchapplication. Forfurtherinformationontheproduct,technology,deliverytermsandconditionsandpricespleasecontactyournearest InfineonTechnologiesoffice(www.infineon.com). PleasenotethatthisproductisnotqualifiedaccordingtotheAECQ100orAECQ101documentsoftheAutomotive ElectronicsCouncil. Warnings Duetotechnicalrequirementsproductsmaycontaindangeroussubstances.Forinformationonthetypesinquestion pleasecontactyournearestInfineonTechnologiesoffice. ExceptasotherwiseexplicitlyapprovedbyInfineonTechnologiesinawrittendocumentsignedbyauthorized representativesofInfineonTechnologies,InfineonTechnologies’productsmaynotbeusedinanyapplicationswherea failureoftheproductoranyconsequencesoftheusethereofcanreasonablybeexpectedtoresultinpersonalinjury.