IKD04N60R

IGBT IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage IKD04N60R 600VTRENCHSTOPTMRC-Seriesforhardswitchingapplications Datasheet IndustrialPowerControl IKD04N60R TRENCHSTOPTMRC-Seriesforhardswitchingapplications IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage  Features: C TRENCHSTOPTMReverseConducting(RC)technologyfor600V applicationsoffering •OptimisedVCEsatandVFforlowconductionlosses •SmoothswitchingperformanceleadingtolowEMIlevels •Verytightparameterdistribution •Operatingrangeof1to20kHz •Maximumjunctiontemperature175°C •Shortcircuitcapabilityof5µs •Bestinclasscurrentversuspackagesizeperformance •QualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant(forPG-TO252:solder temperature260°C,MSL1) •CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ G E C Applications: G •Consumermotordrives E KeyPerformanceandPackageParameters Type IKD04N60R Datasheet www.infineon.com VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package 600V 4A 1.65V 175°C K04R60 PG-TO252-3 PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2.5 2014-03-12 IKD04N60R TRENCHSTOPTMRC-Seriesforhardswitchingapplications TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 Datasheet 3 V2.5 2014-03-12 IKD04N60R TRENCHSTOPTMRC-Seriesforhardswitchingapplications MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Collector-emittervoltage,Tvj≥25°C VCE 600 V DCcollectorcurrent,limitedbyTvjmax Tc=25°C Tc=100°C IC 8.0 4.0 A Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 12.0 A Turn off safe operating area VCE≤600V,Tvj≤175°C,tp=1µs - 12.0 A Diodeforwardcurrent,limitedbyTvjmax Tc=25°C Tc=100°C IF 8.0 4.0 A Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 12.0 A Gate-emitter voltage VGE ±20 V Short circuit withstand time VGE=15.0V,VCC≤400V Allowed number of short circuits < 1000 Time between short circuits: ≥ 1.0s Tvj=150°C tSC PowerdissipationTc=25°C Ptot 75.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C µs 5 Soldering temperature, reflow soldering (MSL1 according to JEDEC J-STA-020) °C 260 ThermalResistance Parameter Symbol Conditions Value min. typ. max. Unit RthCharacteristics IGBT thermal resistance,1) junction - case Rth(j-c) - - 2.00 K/W Diode thermal resistance,2) junction - case Rth(j-c) - - 4.50 K/W Thermal resistance, min. footprint junction - ambient Rth(j-a) - - 75 K/W Thermal resistance, 6cm² Cu on PCB junction - ambient Rth(j-a) - - 50 K/W 1) 2) Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the IGBT, is not possible using a thermocouple. Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the Diode, is not possible using a thermocouple. Datasheet 4 V2.5 2014-03-12 IKD04N60R TRENCHSTOPTMRC-Seriesforhardswitchingapplications ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. 600 - - V VGE=15.0V,IC=4.0A Tvj=25°C Tvj=175°C - 1.65 1.85 2.10 - V - 1.70 1.70 2.10 - V 4.3 5.0 5.7 V VCE=600V,VGE=0V Tvj=25°C Tvj=175°C - - 40 1000 µA StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA Collector-emitter saturation voltage VCEsat Diode forward voltage VF VGE=0V,IF=4.0A Tvj=25°C Tvj=175°C Gate-emitter threshold voltage VGE(th) IC=0.07mA,VCE=VGE Zero gate voltage collector current1) ICES Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=4.0A - 2.2 - S Integrated gate resistor rG Ω none ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. - 305 - - 18 - - 9 - VCC=480V,IC=4.0A, VGE=15V - 27.0 - nC VGE=15.0V,VCC≤400V, tSC≤5µs Tvj=25°C - - A DynamicCharacteristic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG Short circuit collector current Max. 1000 short circuits IC(SC) Time between short circuits: ≥ 1.0s VCE=25V,VGE=0V,f=1MHz 31 pF SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 14 - ns - 8 - ns - 146 - ns - 171 - ns - 0.09 - mJ IGBTCharacteristic,atTvj=25°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff - 0.15 - mJ Total switching energy Ets - 0.24 - mJ 1) Tvj=25°C, VCC=400V,IC=4.0A, VGE=0.0/15.0V, RG(on)=43.0Ω,RG(off)=43.0Ω, Lσ=60nH,Cσ=40pF Lσ,CσfromFig.E Not subject to production test - verified by design/characterization Datasheet 5 V2.5 2014-03-12 IKD04N60R TRENCHSTOPTMRC-Seriesforhardswitchingapplications DiodeCharacteristic,atTvj=25°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Tvj=25°C, VR=400V, IF=4.0A, diF/dt=600A/µs dirr/dt - 43 - ns - 0.22 - µC - 7.6 - A - -330 - A/µs SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 12 - ns - 8 - ns - 177 - ns - 165 - ns - 0.16 - mJ IGBTCharacteristic,atTvj=175°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff - 0.24 - mJ Total switching energy Ets - 0.40 - mJ - 98 - ns - 0.52 - µC - 11.0 - A - -200 - A/µs Tvj=175°C, VCC=400V,IC=4.0A, VGE=0.0/15.0V, RG(on)=43.0Ω,RG(off)=43.0Ω, Lσ=60nH,Cσ=40pF Lσ,CσfromFig.E DiodeCharacteristic,atTvj=175°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Datasheet Tvj=175°C, VR=400V, IF=4.0A, diF/dt=600A/µs dirr/dt 6 V2.5 2014-03-12 IKD04N60R TRENCHSTOPTMRC-Seriesforhardswitchingapplications 3.5 10 IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 3.0 2.5 2.0 1.5 1.0 tp=1µs 10µs 20µs 1 50µs 100µs 500µs DC 0.5 0.0 0.1 1 10 0.1 100 1 f,SWITCHINGFREQUENCY[kHz] 10 100 1000 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 1. Collectorcurrentasafunctionofswitching frequency (Tvj≤175°C,Ta=55°C,D=0.5,VCE=400V, VGE=15/0V,rG=43Ω,PCBmounting,6cm2 Cu, Ptot=2,4W) Figure 2. Forwardbiassafeoperatingarea (D=0,TC=25°C,Tvj≤175°C;VGE=15V) 80 8 7 60 IC,COLLECTORCURRENT[A] Ptot,POWERDISSIPATION[W] 70 50 40 30 20 6 5 4 3 2 10 0 1 25 50 75 100 125 150 0 175 TC,CASETEMPERATURE[°C] Figure 3. Powerdissipationasafunctionofcase temperature (Tvj≤175°C) Datasheet 0 25 50 75 100 125 150 175 TC,CASETEMPERATURE[°C] Figure 4. Collectorcurrentasafunctionofcase temperature (VGE≥15V,Tvj≤175°C) 7 V2.5 2014-03-12 IKD04N60R TRENCHSTOPTMRC-Seriesforhardswitchingapplications 12 12 VGE=20V VGE=20V 17V 10 17V 10 15V IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 15V 13V 8 11V 9V 7V 6 4 13V 8 9V 7V 6 4 2 0 11V 2 0 1 2 3 0 4 0 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 5. Typicaloutputcharacteristic (Tvj=25°C) 3 4 3.5 VCEsat,COLLECTOR-EMITTERSATURATION[V] Tj=25°C Tj=175°C 10 IC,COLLECTORCURRENT[A] 2 Figure 6. Typicaloutputcharacteristic (Tvj=175°C) 12 8 6 4 2 0 1 VCE,COLLECTOR-EMITTERVOLTAGE[V] 4 6 8 10 12 3.0 2.5 2.0 1.5 1.0 0.5 0.0 14 VGE,GATE-EMITTERVOLTAGE[V] Figure 7. Typicaltransfercharacteristic (VCE=10V) Datasheet IC=2A IC=4A IC=8A 0 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 8. Typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature (VGE=15V) 8 V2.5 2014-03-12 IKD04N60R TRENCHSTOPTMRC-Seriesforhardswitchingapplications 1000 1000 t,SWITCHINGTIMES[ns] t,SWITCHINGTIMES[ns] td(off) tf td(on) tr td(off) tf td(on) tr 100 10 1 1 2 3 4 5 6 7 100 10 1 8 0 25 IC,COLLECTORCURRENT[A] Figure 9. Typicalswitchingtimesasafunctionof collectorcurrent (inductiveload,Tvj=175°C,VCE=400V, VGE=15/0V,rG=43Ω,Dynamictestcircuitin Figure E) 100 125 150 7 100 10 25 50 typ. min. max. VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V] td(off) tf td(on) tr t,SWITCHINGTIMES[ns] 75 Figure 10. Typicalswitchingtimesasafunctionofgate resistor (inductiveload,Tvj=175°C,VCE=400V, VGE=15/0V,IC=4A,Dynamictestcircuitin Figure E) 1000 1 50 rG,GATERESISTOR[Ω] 75 100 125 150 6 5 4 3 2 1 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 11. Typicalswitchingtimesasafunctionof junctiontemperature (inductiveload,VCE=400V,VGE=15/0V, IC=4A,rG=43Ω,Dynamictestcircuitin Figure E) Datasheet 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 12. Gate-emitterthresholdvoltageasafunction ofjunctiontemperature (IC=0,07mA) 9 V2.5 2014-03-12 IKD04N60R TRENCHSTOPTMRC-Seriesforhardswitchingapplications 0.7 0.6 Eoff Eon Ets 0.5 E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] 0.6 Eoff Eon Ets 0.5 0.4 0.3 0.2 0.3 0.2 0.1 0.1 0.0 0.4 0 2 4 6 0.0 8 0 25 IC,COLLECTORCURRENT[A] Figure 13. Typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload,Tvj=175°C,VCE=400V, VGE=15/0V,rG=43Ω,Dynamictestcircuitin Figure E) 100 125 150 0.5 Eoff Eon Ets Eoff Eon Ets 0.4 E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] 75 Figure 14. Typicalswitchingenergylossesasa functionofgateresistor (inductiveload,Tvj=175°C,VCE=400V, VGE=15/0V,IC=4A,Dynamictestcircuitin Figure E) 0.5 0.3 0.2 0.1 0.0 50 rG,GATERESISTOR[Ω] 25 50 75 100 125 150 Datasheet 0.3 0.2 0.1 0.0 300 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 15. Typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload,VCE=400V,VGE=15/0V, IC=4A,rG=43Ω,Dynamictestcircuitin Figure E) 0.4 350 400 450 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 16. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload,Tvj=175°C,VGE=15/0V, IC=4A,rG=43Ω,Dynamictestcircuitin Figure E) 10 V2.5 2014-03-12 IKD04N60R TRENCHSTOPTMRC-Seriesforhardswitchingapplications 18 1000 120V 480V 14 Cies Coes Cres 12 C,CAPACITANCE[pF] VGE,GATE-EMITTERVOLTAGE[V] 16 10 8 6 100 10 4 2 0 0 5 10 15 20 25 1 30 0 QGE,GATECHARGE[nC] Figure 17. Typicalgatecharge (IC=4A) 15 20 25 30 14 tSC,SHORTCIRCUITWITHSTANDTIME[µs] IC(SC),SHORTCIRCUITCOLLECTORCURRENT[A] 10 Figure 18. Typicalcapacitanceasafunctionof collector-emittervoltage (VGE=0V,f=1MHz) 60 50 40 30 20 10 0 5 VCE,COLLECTOR-EMITTERVOLTAGE[V] 12 14 16 18 VGE,GATE-EMITTERVOLTAGE[V] Datasheet 10 8 6 4 2 0 20 Figure 19. Typicalshortcircuitcollectorcurrentasa functionofgate-emittervoltage (VCE≤400V,startatTvj=25°C) 12 10 11 12 13 14 15 VGE,GATE-EMITTERVOLTAGE[V] Figure 20. Shortcircuitwithstandtimeasafunctionof gate-emittervoltage (VCE≤400V,startatTvj=150°C) 11 V2.5 2014-03-12 IKD04N60R Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W] Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W] TRENCHSTOPTMRC-Seriesforhardswitchingapplications 1 D=0.5 0.2 0.1 0.05 0.02 0.01 single pulse 0.1 1 D=0.5 0.2 0.1 0.05 0.02 0.01 single pulse 0.1 i: 1 2 3 4 ri[K/W]: 0.492 0.884 0.589 0.074 τi[s]: 2.0E-4 5.4E-4 2.1E-3 0.0316579 0.01 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 i: 1 2 3 4 ri[K/W]: 1.252 1.75 1.261 0.252 τi[s]: 1.4E-4 1.5E-4 9.4E-4 7.1E-3 0.01 1E-7 1 tp,PULSEWIDTH[s] 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 tp,PULSEWIDTH[s] Figure 21. IGBTtransientthermalimpedanceasa functionofpulsewidth1)(seepage4) (D=tp/T) Figure 22. Diodetransientthermalimpedanceasa functionofpulsewidth2)(seepage4) (D=tp/T) 120 0.60 Tj=25°C, IF = 4A Tj=175°C, IF = 4A Qrr,REVERSERECOVERYCHARGE[µC] trr,REVERSERECOVERYTIME[ns] 100 80 60 40 20 0 600 800 1000 1200 1400 0.50 0.40 0.30 0.20 0.10 0.00 600 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 23. Typicalreverserecoverytimeasafunction ofdiodecurrentslope (VR=400V) Datasheet Tj=25°C, IF = 4A Tj=175°C, IF = 4A 800 1000 1200 1400 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 24. Typicalreverserecoverychargeasa functionofdiodecurrentslope (VR=400V) 12 V2.5 2014-03-12 IKD04N60R TRENCHSTOPTMRC-Seriesforhardswitchingapplications 20 0 Tj=25°C, IF = 4A Tj=175°C, IF = 4A Tj=25°C, IF = 4A Tj=175°C, IF = 4A -100 dIrr/dt,diodepeakrateoffallofIrr[A/µs] Irr,REVERSERECOVERYCURRENT[A] 18 16 14 12 10 8 6 -200 -300 -400 -500 -600 -700 4 600 800 1000 1200 -800 600 1400 diF/dt,DIODECURRENTSLOPE[A/µs] 800 1000 1200 1400 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 25. Typicalreverserecoverycurrentasa functionofdiodecurrentslope (VR=400V) Figure 26. Typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope (VR=400V) 12 2.5 Tj=25°C, UG=0V IF=2A IF=4A IF=8A Tj=175°C, UG=0V VF,FORWARDVOLTAGE[V] IF,FORWARDCURRENT[A] 10 8 6 4 2.0 1.5 2 0 0 1 2 1.0 3 VF,FORWARDVOLTAGE[V] Figure 27. Typicaldiodeforwardcurrentasafunction offorwardvoltage Datasheet 0 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 28. Typicaldiodeforwardvoltageasafunction ofjunctiontemperature 13 V2.5 2014-03-12 IKD04N60R TRENCHSTOPTMRC-Seriesforhardswitchingapplications Package Drawing PG-TO252-3 A A1 b b2 b3 c c2 D D1 E E1 e e1 N H L L3 L4 Datasheet DOCUMENT NO. Z8B00003328 MILLIMETERS DIM MIN 2.16 0.00 0.64 0.65 4,95 0.46 0.40 5.97 5.02 6.35 4.32 MAX 2.41 0.15 0.89 1.15 5.50 0.61 0.98 6.22 5.84 6.73 5.21 2.29 (BSC) 4.57 (BSC) SCALE 2.5 0 2.5 5mm EUROPEAN PROJECTION 3 9.40 1.18 0.89 0.51 0 ISSUE DATE 05-02-2016 10.48 1.78 1.27 1.02 REVISION 06 14 V2.5 2014-03-12 IKD04N60R TRENCHSTOPTMRC-Seriesforhardswitchingapplications Testing Conditions VGE(t) I,V 90% VGE t rr = t a + t b Q rr = Q a + Q b dIF/dt a 10% VGE b t Qa IC(t) Qb dI 90% IC 90% IC 10% IC 10% IC Figure C. Definition of diode switching characteristics t VCE(t) t td(off) tf td(on) t tr Figure A. VGE(t) 90% VGE Figure D. 10% VGE t IC(t) CC 2% IC t Figure E. Dynamic test circuit Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor Cr, (only for ZVT switching) VCE(t) t2 E off = t4 VCE x IC x dt E t1 t1 on = VCE x IC x d t 2% VCE t3 t2 t3 t4 t Figure B. Datasheet 15 V2.5 2014-03-12 IKD04N60R TRENCHSTOPTMRC-Seriesforhardswitchingapplications RevisionHistory IKD04N60R Revision:2014-03-12,Rev.2.5 Previous Revision Revision Date Subjects (major changes since last revision) 1.2 2010-01-12 - 2.1 2011-01-17 Release of final datasheet 2.2 2013-02-19 Change package 2.3 2013-12-10 New value ICES max limit at 175°C 2.4 2014-02-26 Without PB free logo 2.5 2014-03-12 Storage temp -55...+150°C Datasheet 16 V2.5 2014-03-12 Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.     Publishedby InfineonTechnologiesAG 81726München,Germany ©InfineonTechnologiesAG2018. AllRightsReserved. ImportantNotice Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”).Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/orany informationregardingtheapplicationoftheproduct,InfineonTechnologiesherebydisclaimsanyandallwarrantiesand liabilitiesofanykind,includingwithoutlimitationwarrantiesofnon-infringementofintellectualpropertyrightsofanythird party. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseof theproductofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityof customer’stechnicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthe completenessoftheproductinformationgiveninthisdocumentwithrespecttosuchapplication. Forfurtherinformationontheproduct,technology,deliverytermsandconditionsandpricespleasecontactyournearest InfineonTechnologiesoffice(www.infineon.com). PleasenotethatthisproductisnotqualifiedaccordingtotheAECQ100orAECQ101documentsoftheAutomotive ElectronicsCouncil. Warnings Duetotechnicalrequirementsproductsmaycontaindangeroussubstances.Forinformationonthetypesinquestion pleasecontactyournearestInfineonTechnologiesoffice. ExceptasotherwiseexplicitlyapprovedbyInfineonTechnologiesinawrittendocumentsignedbyauthorized representativesofInfineonTechnologies,InfineonTechnologies’productsmaynotbeusedinanyapplicationswherea failureoftheproductoranyconsequencesoftheusethereofcanreasonablybeexpectedtoresultinpersonalinjury.