IKD04N60RAATMA1

IGBT IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage IKD04N60RA 600VTRENCHSTOPTMRC-Seriesforhardswitchingapplications Datasheet IndustrialPowerControl IKD04N60RA TRENCHSTOPTMRC-Seriesforhardswitchingapplications IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage  Features: C TRENCHSTOPTMReverseConducting(RC)technologyfor600V applicationsoffering •OptimisedVCEsatandVFforlowconductionlosses •SmoothswitchingperformanceleadingtolowEMIlevels •Verytightparameterdistribution •Operatingrangeof1to20kHz •Maximumjunctiontemperature175°C •Shortcircuitcapabilityof5µs •Bestinclasscurrentversuspackagesizeperformance •QualifiedaccordingtoAECQ101 •Pb-freeleadplating;RoHScompliant(forPG-TO252:solder temperature260°C,MSL1) CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ G E C G E Applications: •HIDlighting •Piezoinjection KeyPerformanceandPackageParameters Type IKD04N60RA VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package 600V 4A 1.65V 175°C K04R60A PG-TO252-3 2 Rev.2.1,2013-02-15 IKD04N60RA TRENCHSTOPTMRC-Seriesforhardswitchingapplications TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 3 Rev.2.1,2013-02-15 IKD04N60RA TRENCHSTOPTMRC-Seriesforhardswitchingapplications Maximumratings Parameter Symbol Value Unit Collector-emitter voltage VCE 600 V DCcollectorcurrent,limitedbyTvjmax TC=25°C TC=100°C IC 8.0 4.0 A Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 12.0 A TurnoffsafeoperatingareaVCE≤600V,Tvj≤175°C - 12.0 A Diodeforwardcurrent,limitedbyTvjmax TC=25°C TC=100°C IF 8.0 4.0 A Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 12.0 A Gate-emitter voltage VGE ±20 V Short circuit withstand time VGE=15.0V,VCC≤400V Allowed number of short circuits < 1000 Time between short circuits: ≥ 1.0s Tvj=150°C tSC PowerdissipationTC=25°C Ptot 75.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+175 °C µs 5 Soldering temperature, reflow soldering (MSL1 according to JEDEC J-STA-020) °C 260 ThermalResistance Parameter Characteristic Symbol Conditions Max.Value Unit IGBT thermal resistance, junction - case Rth(j-c) 2.00 K/W Diode thermal resistance, junction - case Rth(j-c) 4.50 K/W Thermal resistance, min. footprint junction - ambient Rth(j-a) 75 K/W Thermal resistance, 6cm² Cu on PCB junction - ambient Rth(j-a) 50 K/W 4 Rev.2.1,2013-02-15 IKD04N60RA TRENCHSTOPTMRC-Seriesforhardswitchingapplications ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. 600 - - V VGE=15.0V,IC=4.0A Tvj=25°C Tvj=175°C - 1.65 1.85 2.10 - V - 1.70 1.70 2.10 - V 4.3 5.0 5.7 V StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA Collector-emitter saturation voltage VCEsat Diode forward voltage VF VGE=0V,IF=4.0A Tvj=25°C Tvj=175°C Gate-emitter threshold voltage VGE(th) IC=0.07mA,VCE=VGE Zero gate voltage collector current ICES VCE=600V,VGE=0V Tvj=25°C Tvj=175°C - - Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=4.0A - 2.2 - S Integrated gate resistor rG 40.0 µA 1000.0 Ω none ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. - 305 - - 18 - - 9 - VCC=480V,IC=4.0A, VGE=15V - 27.0 - nC VGE=15.0V,VCC≤400V, tSC≤5µs Tvj=25°C - - A DynamicCharacteristic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG Short circuit collector current Max. 1000 short circuits IC(SC) Time between short circuits: ≥ 1.0s VCE=25V,VGE=0V,f=1MHz pF 31 SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 14 - ns - 8 - ns - 146 - ns - 171 - ns - 0.09 - mJ IGBTCharacteristic,atTvj=25°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff - 0.15 - mJ Total switching energy Ets - 0.24 - mJ Tvj=25°C, VCC=400V,IC=4.0A, VGE=0.0/15.0V, rG=43.0Ω,Lσ=60nH, Cσ=40pF Lσ,CσfromFig.E 5 Rev.2.1,2013-02-15 IKD04N60RA TRENCHSTOPTMRC-Seriesforhardswitchingapplications DiodeCharacteristic,atTvj=25°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Tvj=25°C, VR=400V, IF=4.0A, diF/dt=600A/µs dirr/dt - 43 - ns - 0.22 - µC - 7.6 - A - -330 - A/µs SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 12 - ns - 8 - ns - 177 - ns - 165 - ns - 0.16 - mJ IGBTCharacteristic,atTvj=175°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff - 0.24 - mJ Total switching energy Ets - 0.40 - mJ - 98 - ns - 0.52 - µC - 11.0 - A - -200 - A/µs Tvj=175°C, VCC=400V,IC=4.0A, VGE=0.0/15.0V, rG=43.0Ω,Lσ=60nH, Cσ=40pF Lσ,CσfromFig.E DiodeCharacteristic,atTvj=175°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Tvj=175°C, VR=400V, IF=4.0A, diF/dt=600A/µs dirr/dt 6 Rev.2.1,2013-02-15 IKD04N60RA TRENCHSTOPTMRC-Seriesforhardswitchingapplications 4 3 IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 10 Ta=55°C 2 Ta=55°C 1 tp=1µs 10µs 20µs 1 50µs 100µs 500µs DC 0 0.1 1 10 0.1 100 1 f,SWITCHINGFREQUENCY[kHz] 100 1000 Figure 2. Forwardbiassafeoperatingarea (D=0,TC=25°C,Tvj≤175°C;VGE=15V) 80 8 70 7 60 6 IC,COLLECTORCURRENT[A] Ptot,POWERDISSIPATION[W] Figure 1. Collectorcurrentasafunctionofswitching frequency (Tvj≤175°C,D=0,5,VCE=400V,VGE=15/0V, rG=43Ω,PCBMounting,6cm2Cu,Ptot=2,4W, for further information see Appnote: www.infineon.com/igbt) 50 40 30 20 10 0 10 VCE,COLLECTOR-EMITTERVOLTAGE[V] 5 4 3 2 1 25 50 75 100 125 150 0 175 TC,CASETEMPERATURE[°C] 25 50 75 100 125 150 175 TC,CASETEMPERATURE[°C] Figure 3. Powerdissipationasafunctionofcase temperature (Tvj≤175°C) Figure 4. Collectorcurrentasafunctionofcase temperature (VGE≥15V,Tvj≤175°C) 7 Rev.2.1,2013-02-15 IKD04N60RA TRENCHSTOPTMRC-Seriesforhardswitchingapplications 12 12 VGE=20V VGE=20V 17V 10 17V 10 15V IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 15V 13V 8 11V 9V 6 7V 4 2 0 13V 8 11V 9V 6 7V 4 2 0 1 2 3 0 4 0 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 5. Typicaloutputcharacteristic (Tvj=25°C) 3 4 3.5 VCEsat,COLLECTOR-EMITTERSATURATION[V] Tj=25°C Tj=175°C 10 IC,COLLECTORCURRENT[A] 2 Figure 6. Typicaloutputcharacteristic (Tvj=175°C) 12 8 6 4 2 0 1 VCE,COLLECTOR-EMITTERVOLTAGE[V] 4 6 8 10 12 3.0 2.5 2.0 1.5 1.0 0.5 0.0 14 VGE,GATE-EMITTERVOLTAGE[V] IC=2A IC=4A IC=8A 0 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 7. Typicaltransfercharacteristic (VCE=10V) Figure 8. Typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature (VGE=15V) 8 Rev.2.1,2013-02-15 IKD04N60RA TRENCHSTOPTMRC-Seriesforhardswitchingapplications 1000 1000 100 t,SWITCHINGTIMES[ns] t,SWITCHINGTIMES[ns] td(off) tf td(on) tr td(off) tf td(on) tr 10 1 1 2 3 4 5 6 7 100 10 1 8 0 25 IC,COLLECTORCURRENT[A] Figure 9. Typicalswitchingtimesasafunctionof collectorcurrent (inductiveload,Tvj=175°C,VCE=400V, VGE=15/0V,rG=43Ω,Dynamictestcircuitin Figure E) 100 125 150 7 VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V] td(off) tf td(on) tr t,SWITCHINGTIMES[ns] 75 Figure 10. Typicalswitchingtimesasafunctionofgate resistor (inductiveload,Tvj=175°C,VCE=400V, VGE=15/0V,IC=4A,Dynamictestcircuitin Figure E) 1000 100 10 1 50 rG,GATERESISTOR[Ω] 25 50 75 100 125 150 6 5 4 3 2 1 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 11. Typicalswitchingtimesasafunctionof junctiontemperature (inductiveload,VCE=400V,VGE=15/0V, IC=4A,rG=43Ω,Dynamictestcircuitin Figure E) typ. min. max. 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 12. Gate-emitterthresholdvoltageasafunction ofjunctiontemperature (IC=0,07mA) 9 Rev.2.1,2013-02-15 IKD04N60RA TRENCHSTOPTMRC-Seriesforhardswitchingapplications 0.7 0.6 Eoff Eon Ets E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] 0.6 Eoff Eon Ets 0.5 0.4 0.3 0.2 0.1 0.0 0 2 4 6 0.5 0.4 0.3 0.2 0.1 0.0 8 0 25 IC,COLLECTORCURRENT[A] Figure 13. Typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload,Tvj=175°C,VCE=400V, VGE=15/0V,rG=43Ω,Dynamictestcircuitin Figure E) 100 125 150 0.5 Eoff Eon Ets E,SWITCHINGENERGYLOSSES[mJ] Eoff Eon Ets E,SWITCHINGENERGYLOSSES[mJ] 75 Figure 14. Typicalswitchingenergylossesasa functionofgateresistor (inductiveload,Tvj=175°C,VCE=400V, VGE=15/0V,IC=4A,Dynamictestcircuitin Figure E) 0.5 0.4 0.3 0.2 0.1 0.0 50 rG,GATERESISTOR[Ω] 25 50 75 100 125 150 0.3 0.2 0.1 0.0 300 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 15. Typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload,VCE=400V,VGE=15/0V, IC=4A,rG=43Ω,Dynamictestcircuitin Figure E) 0.4 350 400 450 VCE,COLLECTOR-EMITTERVOLTAGE[V] 10 Figure 16. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload,Tvj=175°C,VGE=15/0V, IC=4A,rG=43Ω,Dynamictestcircuitin Figure E) Rev.2.1,2013-02-15 IKD04N60RA TRENCHSTOPTMRC-Seriesforhardswitchingapplications 18 1000 120V 480V 14 C,CAPACITANCE[pF] VGE,GATE-EMITTERVOLTAGE[V] 16 12 10 8 6 Ciss Coss Crss 100 10 4 2 0 0 5 10 15 20 25 1 30 0 QGE,GATECHARGE[nC] Figure 17. Typicalgatecharge (IC=4A) 15 20 25 30 14 tSC,SHORTCIRCUITWITHSTANDTIME[µs] IC(SC),SHORTCIRCUITCOLLECTORCURRENT[A] 10 Figure 18. Typicalcapacitanceasafunctionof collector-emittervoltage (VGE=0V,f=1MHz) 60 50 40 30 20 10 0 5 VCE,COLLECTOR-EMITTERVOLTAGE[V] 12 14 16 18 12 10 8 6 4 2 0 20 VGE,GATE-EMITTERVOLTAGE[V] 10 11 12 13 14 15 VGE,GATE-EMITTERVOLTAGE[V] Figure 19. Typicalshortcircuitcollectorcurrentasa functionofgate-emittervoltage (VCE≤400V,startatTvj=25°C) Figure 20. Shortcircuitwithstandtimeasafunctionof gate-emittervoltage (VCE≤400V,startatTvj=150°C) 11 Rev.2.1,2013-02-15 IKD04N60RA Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W] Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W] TRENCHSTOPTMRC-Seriesforhardswitchingapplications 1 D=0.5 0.2 0.1 0.05 0.02 0.01 0.1 single pulse 1 D=0.5 0.2 0.1 0.05 0.02 0.01 single pulse 0.1 i: 1 2 3 4 ri[K/W]: 0.492 0.884 0.589 0.074 τi[s]: 2.0E-4 5.4E-4 2.1E-3 0.0316579 0.01 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 i: 1 2 3 4 ri[K/W]: 1.252 1.75 1.261 0.252 τi[s]: 1.4E-4 1.5E-4 9.4E-4 7.1E-3 0.01 1E-7 1 tp,PULSEWIDTH[s] 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 tp,PULSEWIDTH[s] Figure 21. IGBTtransientthermalimpedance1) (D=tp/T) Figure 22. Diodetransientthermalimpedanceasa functionofpulsewidth1) (D=tp/T) 120 0.60 Tj=25°C, IF = 4A Tj=175°C, IF = 4A Qrr,REVERSERECOVERYCHARGE[µC] trr,REVERSERECOVERYTIME[ns] 100 80 60 40 20 0 600 800 1000 1200 1400 diF/dt,DIODECURRENTSLOPE[A/µs] 0.50 0.40 Tj=25°C, IF = 4A Tj=175°C, IF = 4A 0.30 0.20 0.10 0.00 600 800 1000 1200 1400 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 23. Typicalreverserecoverytimeasafunction ofdiodecurrentslope (VR=400V) 12 Figure 24. Typicalreverserecoverychargeasa functionofdiodecurrentslope (VR=400V) Rev.2.1,2013-02-15 IKD04N60RA TRENCHSTOPTMRC-Seriesforhardswitchingapplications 20 0 Tj=25°C, IF = 4A Tj=175°C, IF = 4A Tj=25°C, IF = 4A Tj=175°C, IF = 4A -100 dIrr/dt,diodepeakrateoffallofIrr[A/µs] Irr,REVERSERECOVERYCURRENT[A] 18 16 14 12 10 8 6 -200 -300 -400 -500 -600 -700 4 600 800 1000 1200 -800 600 1400 diF/dt,DIODECURRENTSLOPE[A/µs] 800 1000 1200 1400 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 25. Typicalreverserecoverycurrentasa functionofdiodecurrentslope (VR=400V) Figure 26. Typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope (VR=400V) 12 2.5 Tj=25°C, UG=0V IF=2A IF=4A IF=8A Tj=175°C, UG=0V VF,FORWARDVOLTAGE[V] IF,FORWARDCURRENT[A] 10 8 6 4 2.0 1.5 2 0 0 1 2 1.0 3 VF,FORWARDVOLTAGE[V] 0 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 27. Typicaldiodeforwardcurrentasafunction offorwardvoltage 13 Figure 28. Typicaldiodeforwardvoltageasafunction ofjunctiontemperature Rev.2.1,2013-02-15 IKD04N60RA TRENCHSTOPTMRC-Seriesforhardswitchingapplications PG - TO252 - 3 14 Rev.2.1,2013-02-15 IKD04N60RA TRENCHSTOPTMRC-Seriesforhardswitchingapplications t 15 Rev.2.1,2013-02-15 IKD04N60RA TRENCHSTOPTMRC-Seriesforhardswitchingapplications RevisionHistory IKD04N60RA Revision:2013-02-15,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2013-02-15 Final data sheet WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall? Yourfeedbackwillhelpustocontinuouslyimprovethequalityofthisdocument. Pleasesendyourproposal(includingareferencetothisdocument)to:erratum@infineon.com Publishedby InfineonTechnologiesAG 81726Munich,Germany 81726München,Germany ©2013InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics. Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingthe applicationofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind, includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandprices,pleasecontactthenearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesin question,pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystems and/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineon Technologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support, automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Life supportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustain and/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybe endangered. 16 Rev.2.1,2013-02-15