IKD06N60R

IGBT IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage IKD06N60R 600VTRENCHSTOPTMRC-Seriesforhardswitchingapplications Datasheet IndustrialPowerControl IKD06N60R TRENCHSTOPTMRC-Seriesforhardswitchingapplications IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage  Features: C TRENCHSTOPTMReverseConducting(RC)technologyfor600V applicationsoffering •OptimisedVCEsatandVFforlowconductionlosses •SmoothswitchingperformanceleadingtolowEMIlevels •Verytightparameterdistribution •Operatingrangeof1to20kHz •Maximumjunctiontemperature175°C •Shortcircuitcapabilityof5µs •Bestinclasscurrentversuspackagesizeperformance •QualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant(forPG-TO252:solder temperature260°C,MSL1) •CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ G E C G Applications: E •Consumermotordrives KeyPerformanceandPackageParameters Type IKD06N60R VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package 600V 6A 1.65V 175°C K06R60 PG-TO252-3 2 Rev.2.5,2014-03-12 IKD06N60R TRENCHSTOPTMRC-Seriesforhardswitchingapplications TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 3 Rev.2.5,2014-03-12 IKD06N60R TRENCHSTOPTMRC-Seriesforhardswitchingapplications Maximumratings Parameter Symbol Value Unit Collector-emittervoltage,Tvj≥25°C VCE 600 V DCcollectorcurrent,limitedbyTvjmax TC=25°C TC=100°C IC 12.0 6.0 A Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 18.0 A Turn off safe operating area VCE≤600V,Tvj≤175°C,tp=1µs - 18.0 A Diodeforwardcurrent,limitedbyTvjmax TC=25°C TC=100°C IF 12.0 6.0 A Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 18.0 A Gate-emitter voltage VGE ±20 V Short circuit withstand time VGE=15.0V,VCC≤400V Allowed number of short circuits < 1000 Time between short circuits: ≥ 1.0s Tvj=150°C tSC PowerdissipationTC=25°C Ptot 100.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C µs 5 Soldering temperature, reflow soldering (MSL1 according to JEDEC J-STA-020) °C 260 ThermalResistance Parameter Characteristic Symbol Conditions Max.Value Unit IGBT thermal resistance,1) junction - case Rth(j-c) 1.50 K/W Diode thermal resistance,2) junction - case Rth(j-c) 3.60 K/W Thermal resistance, min. footprint junction - ambient Rth(j-a) 75 K/W Thermal resistance, 6cm² Cu on PCB junction - ambient Rth(j-a) 50 K/W 1) 2) Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the IGBT, is not possible using a thermocouple. Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the Diode, is not possible using a thermocouple. 4 Rev.2.5,2014-03-12 IKD06N60R TRENCHSTOPTMRC-Seriesforhardswitchingapplications ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. 600 - - V VGE=15.0V,IC=6.0A Tvj=25°C Tvj=175°C - 1.65 1.85 2.10 - V - 1.70 1.70 2.10 - V 4.3 5.0 5.7 V VCE=600V,VGE=0V Tvj=25°C Tvj=175°C - - StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA Collector-emitter saturation voltage VCEsat Diode forward voltage VF VGE=0V,IF=6.0A Tvj=25°C Tvj=175°C Gate-emitter threshold voltage VGE(th) IC=0.11mA,VCE=VGE Zero gate voltage collector current1) ICES 40.0 µA 1000.0 Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=6.0A - 3.4 - S Integrated gate resistor rG Ω none ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. - 470 - - 24 - - 14 - VCC=480V,IC=6.0A, VGE=15V - 48.0 - nC VGE=15.0V,VCC≤400V, tSC≤5µs Tvj=25°C - - A DynamicCharacteristic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG Short circuit collector current Max. 1000 short circuits IC(SC) Time between short circuits: ≥ 1.0s VCE=25V,VGE=0V,f=1MHz pF 46 SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 12 - ns - 7 - ns - 127 - ns - 152 - ns - 0.11 - mJ IGBTCharacteristic,atTvj=25°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff - 0.22 - mJ Total switching energy Ets - 0.33 - mJ 1) Tvj=25°C, VCC=400V,IC=6.0A, VGE=0.0/15.0V, rG=23.0Ω,Lσ=60nH, Cσ=40pF Lσ,CσfromFig.E Not subject to production test - verified by design/characterization 5 Rev.2.5,2014-03-12 IKD06N60R TRENCHSTOPTMRC-Seriesforhardswitchingapplications DiodeCharacteristic,atTvj=25°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Tvj=25°C, VR=400V, IF=6.0A, diF/dt=800A/µs dirr/dt - 68 - ns - 0.37 - µC - 12.0 - A - -211 - A/µs SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 12 - ns - 10 - ns - 164 - ns - 171 - ns - 0.20 - mJ IGBTCharacteristic,atTvj=175°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff - 0.36 - mJ Total switching energy Ets - 0.56 - mJ - 74 - ns - 0.80 - µC - 17.0 - A - -237 - A/µs Tvj=175°C, VCC=400V,IC=6.0A, VGE=0.0/15.0V, rG=23.0Ω,Lσ=60nH, Cσ=40pF Lσ,CσfromFig.E DiodeCharacteristic,atTvj=175°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Tvj=175°C, VR=400V, IF=6.0A, diF/dt=800A/µs dirr/dt 6 Rev.2.5,2014-03-12 IKD06N60R TRENCHSTOPTMRC-Seriesforhardswitchingapplications 4 3 IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 10 2 1 tp=1µs 50µs 20µs 10µs 1 200µs 500µs DC 0 0.1 1 10 0.1 100 1 f,SWITCHINGFREQUENCY[kHz] 10 100 1000 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 1. Collectorcurrentasafunctionofswitching frequency (Tvj≤175°C,Ta=55°C,D=0.5,VCE=400V, VGE=15/0V,rG=23Ω,PCBmounting,6cm2 Cu, Ptot=2,4W) Figure 2. Forwardbiassafeoperatingarea (D=0,TC=25°C,Tvj≤175°C;VGE=15V) 110 100 12 IC,COLLECTORCURRENT[A] Ptot,POWERDISSIPATION[W] 90 80 70 60 50 40 30 10 8 6 4 20 2 10 0 25 50 75 100 125 150 0 175 TC,CASETEMPERATURE[°C] 0 25 50 75 100 125 150 175 TC,CASETEMPERATURE[°C] Figure 3. Powerdissipationasafunctionofcase temperature (Tvj≤175°C) Figure 4. Collectorcurrentasafunctionofcase temperature (VGE≥15V,Tvj≤175°C) 7 Rev.2.5,2014-03-12 IKD06N60R TRENCHSTOPTMRC-Seriesforhardswitchingapplications 18 18 VGE=20V 16 VGE=20V 16 17V 17V 15V 15V 14 13V IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 14 11V 12 9V 10 7V 8 6 13V 9V 10 6 4 2 2 0 1 2 3 0 4 7V 8 4 0 11V 12 0 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 5. Typicaloutputcharacteristic (Tvj=25°C) 3 4 3.5 VCEsat,COLLECTOR-EMITTERSATURATION[V] Tj=25°C Tj=175°C 15 IC,COLLECTORCURRENT[A] 2 Figure 6. Typicaloutputcharacteristic (Tvj=175°C) 18 12 9 6 3 0 1 VCE,COLLECTOR-EMITTERVOLTAGE[V] 4 6 8 10 12 3.0 2.5 2.0 1.5 1.0 0.5 0.0 14 VGE,GATE-EMITTERVOLTAGE[V] IC=3A IC=6A IC=12A 0 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 7. Typicaltransfercharacteristic (VCE=10V) Figure 8. Typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature (VGE=15V) 8 Rev.2.5,2014-03-12 IKD06N60R TRENCHSTOPTMRC-Seriesforhardswitchingapplications 1000 1000 100 t,SWITCHINGTIMES[ns] t,SWITCHINGTIMES[ns] td(off) tf td(on) tr td(off) tf td(on) tr 10 1 2 4 6 8 10 100 10 1 12 10 20 IC,COLLECTORCURRENT[A] Figure 9. Typicalswitchingtimesasafunctionof collectorcurrent (inductiveload,Tvj=175°C,VCE=400V, VGE=15/0V,rG=23Ω,Dynamictestcircuitin Figure E) 50 60 70 80 7 100 VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V] t,SWITCHINGTIMES[ns] 40 Figure 10. Typicalswitchingtimesasafunctionofgate resistor (inductiveload,Tvj=175°C,VCE=400V, VGE=15/0V,IC=6A,Dynamictestcircuitin Figure E) 1000 td(off) tf td(on) tr 10 1 30 rG,GATERESISTOR[Ω] 25 50 75 100 125 150 6 5 4 3 2 1 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 11. Typicalswitchingtimesasafunctionof junctiontemperature (inductiveload,VCE=400V,VGE=15/0V, IC=6A,rG=23Ω,Dynamictestcircuitin Figure E) typ. min. max. 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 12. Gate-emitterthresholdvoltageasafunction ofjunctiontemperature (IC=0.11mA) 9 Rev.2.5,2014-03-12 IKD06N60R TRENCHSTOPTMRC-Seriesforhardswitchingapplications 1.0 0.8 Eoff Eon Ets E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] Eoff Eon Ets 0.8 0.6 0.4 0.2 0.0 0 2 4 6 8 10 0.6 0.4 0.2 0.0 12 10 20 IC,COLLECTORCURRENT[A] Figure 13. Typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload,Tvj=175°C,VCE=400V, VGE=15/0V,rG=23Ω,Dynamictestcircuitin Figure E) 40 50 60 70 80 Figure 14. Typicalswitchingenergylossesasa functionofgateresistor (inductiveload,Tvj=175°C,VCE=400V, VGE=15/0V,IC=6A,Dynamictestcircuitin Figure E) 0.5 0.7 Eoff Eon Ets 0.6 E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] 30 rG,GATERESISTOR[Ω] 0.4 0.3 0.2 0.1 Eoff Eon Ets 0.5 0.4 0.3 0.2 0.1 0.0 25 50 75 100 125 150 0.0 300 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 15. Typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload,VCE=400V,VGE=15/0V, IC=6A,rG=23Ω,Dynamictestcircuitin Figure E) 350 400 450 VCE,COLLECTOR-EMITTERVOLTAGE[V] 10 Figure 16. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload,Tvj=175°C,VGE=15/0V, IC=6A,rG=23Ω,Dynamictestcircuitin Figure E) Rev.2.5,2014-03-12 IKD06N60R TRENCHSTOPTMRC-Seriesforhardswitchingapplications 16 1000 120V 480V Cies Coes Cres 12 C,CAPACITANCE[pF] VGE,GATE-EMITTERVOLTAGE[V] 14 10 8 6 100 4 2 0 0 10 20 30 40 10 50 0 QGE,GATECHARGE[nC] Figure 17. Typicalgatecharge (IC=6A) 15 20 25 30 14 80 tSC,SHORTCIRCUITWITHSTANDTIME[µs] IC(SC),SHORTCIRCUITCOLLECTORCURRENT[A] 10 Figure 18. Typicalcapacitanceasafunctionof collector-emittervoltage (VGE=0V,f=1MHz) 90 70 60 50 40 30 20 10 0 5 VCE,COLLECTOR-EMITTERVOLTAGE[V] 12 14 16 18 12 10 8 6 4 2 0 20 VGE,GATE-EMITTERVOLTAGE[V] 10 11 12 13 14 15 VGE,GATE-EMITTERVOLTAGE[V] Figure 19. Typicalshortcircuitcollectorcurrentasa functionofgate-emittervoltage (VCE≤400V,startatTvj=25°C) Figure 20. Shortcircuitwithstandtimeasafunctionof gate-emittervoltage (VCE≤400V,startatTvj≤150°C) 11 Rev.2.5,2014-03-12 IKD06N60R Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W] Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W] TRENCHSTOPTMRC-Seriesforhardswitchingapplications 1 D=0.5 0.2 0.1 0.05 0.02 0.01 0.1 single pulse 1 D=0.5 0.2 0.1 0.05 0.02 0.01 single pulse 0.1 i: 1 2 3 4 ri[K/W]: 0.1032 0.7299 0.5682 0.0638 τi[s]: 7.9E-5 4.0E-4 1.8E-3 0.0307 0.01 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 i: 1 2 3 4 ri[K/W]: 1.0958 1.6643 0.7461 0.0827 τi[s]: 7.9E-5 2.8E-4 1.7E-3 0.02494 0.01 1E-7 1 tp,PULSEWIDTH[s] 1E-4 0.001 0.01 0.1 1 Figure 22. Diodetransientthermalimpedanceasa functionofpulsewidth2)(seepage4) (D=tp/T) 200 1.0 Tj=175°C, IF = 6A Tj=25°C, IF = 6A Qrr,REVERSERECOVERYCHARGE[µC] Tj=175°C, IF = 6A Tj=25°C, IF = 6A trr,REVERSERECOVERYTIME[ns] 1E-5 tp,PULSEWIDTH[s] Figure 21. IGBTtransientthermalimpedanceasa functionofpulsewidth1)(seepage4) (D=tp/T) 150 100 50 0 500 1E-6 600 700 800 0.8 0.6 0.4 0.2 0.0 500 900 diF/dt,DIODECURRENTSLOPE[A/µs] 600 700 800 900 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 23. Typicalreverserecoverytimeasafunction ofdiodecurrentslope (VR=400V) 12 Figure 24. Typicalreverserecoverychargeasa functionofdiodecurrentslope (VR=400V) Rev.2.5,2014-03-12 IKD06N60R TRENCHSTOPTMRC-Seriesforhardswitchingapplications 20 0 Tj=175°C, IF = 6A Tj=25°C, IF = 6A 18 dIrr/dt,diodepeakrateoffallofIrr[A/µs] Irr,REVERSERECOVERYCURRENT[A] Tj=175°C, IF = 6A Tj=25°C, IF = 6A 16 14 12 10 8 500 600 700 800 -100 -200 -300 -400 500 900 diF/dt,DIODECURRENTSLOPE[A/µs] 600 700 800 900 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 25. Typicalreverserecoverycurrentasa functionofdiodecurrentslope (VR=400V) Figure 26. Typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope (VR=400V) 18 2.5 16 IF=3A IF=6A IF=12A Tj=25°C, UG=0V Tj=175°C, UG=0V VF,FORWARDVOLTAGE[V] IF,FORWARDCURRENT[A] 14 12 10 8 6 2.0 1.5 4 2 0 0 1 2 1.0 3 VF,FORWARDVOLTAGE[V] 0 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 27. Typicaldiodeforwardcurrentasafunction offorwardvoltage 13 Figure 28. Typicaldiodeforwardvoltageasafunction ofjunctiontemperature Rev.2.5,2014-03-12 IKD06N60R TRENCHSTOPTMRC-Seriesforhardswitchingapplications PG - TO252 - 3 14 Rev.2.5,2014-03-12 IKD06N60R TRENCHSTOPTMRC-Seriesforhardswitchingapplications vGE(t) 90% VGE a a b b t iC(t) 90% IC 90% IC 10% IC 10% IC t vCE(t) t td(off) tf td(on) t tr vGE(t) 90% VGE 10% VGE t iC(t) 2% IC t vCE(t) 2% VCE t1 t2 t3 t4 t 15 Rev.2.5,2014-03-12 IKD06N60R TRENCHSTOPTMRC-Seriesforhardswitchingapplications RevisionHistory IKD06N60R Revision:2014-03-12,Rev.2.5 Previous Revision Revision Date Subjects (major changes since last revision) 1.2 2010-01-12 - 2.1 2011-01-17 Release of final datasheet 2.2 2013-02-19 Change package 2.3 2013-12-10 Neu value ICES max limit at 175°C 2.4 2014-02-26 Without PB free logo 2.5 2014-03-12 Storage temp -55...+150°C WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall? Yourfeedbackwillhelpustocontinuouslyimprovethequalityofthisdocument. Pleasesendyourproposal(includingareferencetothisdocument)to:erratum@infineon.com Publishedby InfineonTechnologiesAG 81726Munich,Germany 81726München,Germany ©2014InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics. Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingthe applicationofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind, includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandprices,pleasecontactthenearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesin question,pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystems and/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineon Technologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support, automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Life supportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustain and/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybe endangered. 16 Rev.2.5,2014-03-12