Infineon EiceDRIVER™ gate driver ICs
Selection guide 2022
Every switch needs a driver
www.infineon.com/gatedriver
www.infineon.com/gdbrochure
2
Contents
Infineon gate driver IC technologies
4
New product highlights
56
Non-isolated gate driver ICs
Overview
4
Infineon non-isolated (N-ISO) technology
6
Infineon junction-isolation (JI) technology
7
- 1ED4417x & 2ED24427: 1-ch low-side driver with OCP &
2-ch low-side driver with 10 A output current
Infineon silicon-on-insulator (SOI) technology
8
- 2EDN: 2-ch low side driver with 5 A output current
Infineon coreless transformer (CT) technology
10
- 1EDN71x6: 1-ch TDI gate driver for CoolGaNTM HEMTs
Level-shift gate driver ICs
56
59
Choosing a gate driver IC
12
- 2EDL8xxx: 120 V, 6 A, high and low-side driver family
Infineon power switch technologies
14
- 6EDL7141: 60 V, 3-ph programmable motor control driver
MOSFETs
14
IGBTs (discrete and module)
16
- 2ED27xx & 6ED2742: 160 V, half-bridge & 3-ph motor
control driver family
SiC MOSFETs (discrete and module)
18
- 2ED21xx: 650 V half-bridge SOI driver family
GaN HEMTs
21
- 2ED132x & 6ED2231: 1200 V, half-bridge & 3-ph SOI
driver family
Gate driver typical applications
22
Automotive electric drive train
23
Automotive low voltage drives
24
CAV
25
EV charging
26
Industrial drives
28
Light electric vehicles (LEV)
30
Lighting
31
Low voltage drives & Battery powered applications
32
Major and small home appliances
34
Solar
36
Telecom, server and industrial SMPS
38
Uninterruptible power supply (UPS)
40
Product portfolio overview
43
Non-isolated gate driver ICs
44
- Low side gate driver ICs
44
- TDI gate driver ICs
45
Level-shift gate driver ICs:
46
- Half-bridge & high and low side gate driver ICs
46
- Three-phase gate driver ICs
48
- Full bridge gate driver ICs
49
- High-side gate driver ICs
49
Galvanic isolated gate driver ICs
50
Automotive gate driver ICs
52
- Automotive gate driver ICs
52
- Automotive MOTIX™ motor gate driver ICs
53
Gate driver features and packages
54
Galvanic isolated gate driver ICs
64
- 2EDi: 2-ch isolated gate driver
- 1ED31xx & 1ED32xx: 1-ch isolated driver with Miller
clamp & slew rate control
- 1ED332x & 1ED34xx: 1-ch isolated driver with Miller
clamp and DESAT
- 1ED38xx: 1-ch isolated driver with I2C configurability
Automotive gate driver ICs
68
- TLE956x: MOTIX™ (BL)DC motor system ICs
- TLE9210x: MOTIX™ multi MOSFET driver ICs
- TLE9180: MOTIX™ automotive motor gate driver ICs
- 2ED4820-EM: 48 V smart high-side driver with SPI
- 1EDI30xx: 1-ch isolated driver with DESAT and ADC
Infineon controller technologies
74
AURIX™
74
iMOTIONTM
75
PSoC™
76
MOTIX™
77
Traveo™
78
XMC™
79
Gate driver support materials
80
Gate driver evaluation boards and reference designs 80
Gate driver community and simulation models
87
Gate driver brochures and sample boxes
88
Gate driver online selection and cross-reference tools
89
Infineon gate driver naming conventions
91
3
Infineon gate driver IC
technologies
EiceDRIVER™ and MOTIX™ gate driver IC
Gate driver ICs serve as the interface between control signals (digital or analog controllers) and power switches
(IGBTs, MOSFETs, SiC MOSFETs, and GaN HEMTs). The integrated gate driver solutions reduce your design complexity,
development time, bill of materials (BOM), and board space while improving reliability over discretely-implemented
gate-drive solutions.
Every switch needs a driver, the right driver makes a difference. Infineon offers a comprehensive portfolio of EiceDRIVER™
gate driver ICs with a variety of configurations, voltage classes, isolation levels, protection features, and package options.
EiceDRIVER™ gate driver ICs are complementary to Infineon IGBT discretes and modules, silicon (CoolMOS™, OptiMOS™
and StrongIRFETTM) and silicon carbide MOSFETs (CoolSiC™), gallium nitride HEMTs (CoolGaN™), or as part of integrated
power modules (CIPOS™ IPM and iMOTION™ smart IPM).
In addition, MOTIX™ gate driver is part of the MOTIX™ scalable product portfolio for low-voltage motor control solutions
including MOTIX™ Driver, MOTIX™ Bridge, MOTIX™ SBC, and MOTIX™ MCU.
Voltage class1
2300 V
Coreless transformer (CT)
Galvanically Isolation-Functional, Basic, Reinforced
EiceDRIVER™
+ booster
or
Driver boards
UL 1577 VISO = 5.7 kV(rms) for 1 min
VDE 0884-11 VIDRM = 1767 V
1200 V
600 V
Level-Shift
Silicon On Insulator (SOI)
Junction Isolation (JI)
Voffset = 100 V, 200 V, 500 V,
600 V, 650 V, 1200 V
200 V
TDI (N-ISO)
25 V
Low side (N-ISO)
2.5 kW
5 kW
7.5 kW
30 kW
Gate driver configuration
75 kW
25 V
25 - 105 V
Power
level
200 kW
200 V
500 V
600 V
650 V
1200 V
2300 V
Isolated
1-Channel
High-side
Low-side
Isolated
Gate drivers
High-side
2-Channel
Low-side
High-side + Low side
Half-bridge
4-Channel
Full-bridge
6-Channel
Three-phase
Non-isolated (N-ISO)
Junction isolation (JI)
Silicon on insulator (SOI)
Coreless transformer (CT)
Note 1 Voltage class on the top row is defined base on different driver configurations for the maximum Voltage class.
1. For single high-side, high-side and low-side, half bridge and three phase gate drivers, voltage class is defined as switch break down voltage in applications.
2. For low side drivers (N-ISO), voltage class is defined as maximum operating range supply voltage.
3. For special cases as 1EDNx550 (1EDN-TDI, N-ISO), voltage class is defined as maximum bus voltage (highest floating voltage it can manage).
4
Infineon gate driver IC
technologies
Infineon gate driver IC applications
Leveraging the application expertise and advanced
technologies of Infineon and International rectifier,
EiceDRIVER™ gate driver ICs are well-suited for many
applications such as industrial motor drives, home
appliances, solar inverters, automotive applications,
EV-charging, UPS, switch-mode power supplies (SMPS),
high-voltage lighting, battery-powered applications, etc.
Level-shifting technology (SOI&JI)
Coreless transformer
(CT) technology
Industrial
robotics
Non-Isolated
(N-ISO) technology
Infineon gate driver IC technologies
Non-isolated GD
Non-isolated (N-ISO)
› Monolithic construction of
ground-reference gate drivers
for 20 to 35 V supply voltage
applications
› Comprehensive families of
single- and dual-low-side drivers
with flexible options for output
current, logic configurations and
UVLOs (plus non-isolated TDI)
› Uses rugged and highperformance technologies of
HVIC process or state-of-the-art
130-nm process
Level-shift GD
Junction isolation (JI)
› Monolithic construction of
1 to 6 gate drive channels up to
1200 V rating
› Industrial pioneering highvoltage IC (HVIC) technology
used in all high-voltage gate
drive applications
› Gen 2 technology (IR prefix):
Industrial pioneering HVIC
process
› Gen 5 technology (IRS prefix):
Cost-effective pin-to-pin versions
of Gen 2
Isolated GD
Silicon on insulator (SOI)
› Monolithic construction of
2 to 6 gate drive channels up to
1200 V rating
› Built-in PN-based bootstrap
diode (36 Ω typ.) for simplified
bootstrap operation & reduced
PCB area
› Negative transient immunity to
prevent latch-up: -100 V for 300 ns
› >50% lower level-shift losses
for higher efficiency, higher
frequency operation, smaller heat
sinks, and higher reliability
Coreless transformer (CT)
› Two separate chips solution with
magnetic coupling providing
galvanically isolated single- and
dual channel gate drivers
› VDE 0884-11 isolation technology
providing isolation up to 8 kVpk
VIOTM and up to ±2300 V
functional isolation
› CMTI of more than 300 V/ns
› Strongest gate-drive output
currents (up to ±18 A) reducing
need for external booster
5
Infineon gate driver IC
technologies
Infineon non-isolated (N-ISO) technology
Non-isolated (N-ISO) technology refers to the gate driver ICs utilizing
low-voltage circuitry with the robust technology of high-voltage gate drivers,
and the state-of-the-art 0.13-µm process. Infineon’s world-class fabrication
techniques enable high-current gate drivers for high-power-density
applications.
Low side gate driver
Infineon offers comprehensive families of single-low-side and dual-low-side gate driver ICs with flexible options for
output current, logic configurations, packages, and protection features such as under-voltage lockout (UVLO), integrated
overcurrent protection (OCP) in industry-standard DSO-8 and small form-factor SOT23 and WSON packages.
The new 1ED4417x low side driver family provides the best-in-class fault reporting accuracy with OCP threshold tolerance
of ± 5%. In addition, Infineon’s IC technology enables a tiny PG-SOT23 package by combining the fault output and enable
functions into a single pin.
Truly differential inputs (TDI) gate driver
The input signal levels of conventional low-side gate driver ICs are referenced to the ground potential of the gate driver
IC. If in the application the ground potential of the gate driver IC shifts excessively, false triggering of the gate driver IC can
occur. The 1EDN-TDI gate driver ICs have truly differential inputs. Their control signal inputs are largely independent from
the ground potential. Only the voltage difference between its input contacts is relevant. This prevents false triggering of
power MOSFETs.
www.infineon.com/GDlowside
www.infineon.com/tdi
6
Infineon gate driver IC
technologies
Infineon junction-isolation (JI) technology
Infineon p-n junction-isolation (JI) technology is a mature, proven industry-standard MOS/CMOS
fabrication technique. Infineon’s proprietary HVIC and latch-immune CMOS technologies enable rugged
monolithic construction. The advanced process allows monolithic high-voltage and low-voltage circuitry
construction with the best price per performance for specific motor-control and switch-mode power
supply applications.
Main benefits of Infineon JI technology:
E
n
n
B C
p
› High current capability (4 A)
› Precision analog circuitry (tight timing / propagation delay)
› Most comprehensive portfolio with industry-standard gate driver ICs
› Voltage classes: 100 V, 200 V, 500 V, 600 V, and 1200 V
› Configurations: single channel, half-bridge / high- and low-side, three-phase, and more
› Gate driver ICs tailored towards the best price-performance ratio
Pioneered by International Rectifier (IR) since 1984 with the introduction of the first monolithic
product, the high-voltage integrated circuit (HVIC) technology uses patented and proprietary
monolithic structures integrating bipolar, CMOS, and lateral DMOS devices with breakdown voltages
above 700 V and 1400 V for operating offset voltages of 600 V and 1200 V respectively.
Using this mixed-signal HVIC technology, both high-voltage level-shifting circuits and low-voltage
analog and digital circuits can be implemented. This is done with the ability to place high-voltage
circuitry (in a ‘well’ formed by polysilicon rings).
These HVIC gate drivers with floating switches are well-suited for topologies requiring high-side, half-bridge,
and three-phase configurations.
HVIC
LDMOS LEVEL SHIFT
HV
n+
P++
High-side
circuitry
p-
HV
n+
n+
p-
p-
p+
p+
n+
n+
HV
n+
p-well
n-epi
n+
P++
pP++
p-sub
Polysilicon
rings
GROUNDED CMOS
LV
n+
Figure 1: Top down view of JI gate driver IC
p-
HV-FLOATING CMOS
P++
Low-side
circuitry
p-
n-epi
p-sub
P++
p+
p+
n+
n-epi
p-well
LV
n+
n+
P++
p-sub
Figure 2: Device cross section of the high-voltage integrated circuit
www.infineon.com/ji
7
Infineon gate driver IC
technologies
Infineon silicon-on-insulator (SOI) technology
Infineon silicon-on-insulator (SOI) technology is a high-voltage, level-shift technology for Infineon
EiceDRIVER™ level-shift gate driver ICs with integrated bootstrap-diode (BSD) and industry-best-inclass robustness to protect against negative transient voltage spikes. Each transistor is isolated by
buried silicon dioxide eliminating parasitic bipolar transistors that can cause latch-up. This technology
can also lower the level-shift power losses to minimize device-switching power dissipation. The
advanced process allows monolithic high-voltage and low-voltage circuitry construction with
technology-enhanced benefits.
SiO2
Active area
Substrate
Main benefits of Infineon SOI technology:
› Best-in-class immunity to negative transient voltage prevents erratic
operation and latch-up while improving reliability
› Low ohmic integrated bootstrap diodes (BSD) have the lowest reverse
recovery and forward losses resulting in increased efficiency, faster
switching, lower temperature, and increased reliability
› Minimum level-shift losses improve driver efficiency and allow
flexible housing designs
› Integrated input filters enhance noise immunity
› 160 V, 200 V, 600 V, 650 V and 1200 V withstand voltages for each
voltage design class providing operating margin
Operation robustness of negative transient voltage on the VS pin (-VS)
Today’s high-power switching inverters and drives carry a large load current. The voltage swing on VS
pin does not stop at the level of the negative DC bus. It swings below the level of the negative DC bus
due to the parasitic inductances in the power circuit and from the die bonding to the PCB tracks. This
undershoot voltage is called “negative transient voltage”.
EiceDRIVER™ SOI level-shift gate drivers have the best-in-the-industry operational robustness. In
Figure 4, the safe operating line of 6ED2230S12T is shown at VBS = 15 V for pulse widths up to 1000 ns.
In the green area, the products do not show unwanted functional anomalies or permanent damage to the IC.
PW (ns)
VBUS
LC1
D1
Q1
VS-COM
Typ. IC-failure
mechanisms:
- HO flip
- Latch up/Iqcc shift
LC2
-VS
D2
Q2
LE2
DC- BUS
Figure 3:
Parasitic elements of a half-bridge configuration
t
0
200
400
600
800
1000
-20
-40
LE1
VS1
0
VS UNDERSHOOT
Vs (V)
DC+ BUS
-60
Safe operating area (SOA)
-80
-100
-120
Figure 4:
Negative VS transient SOA characterization @ VBS=15 V of 6ED2230S12T
www.infineon.com/soi
8
Infineon gate driver IC
technologies
Infineon silicon-on-insulator (SOI) technology
Integrated bootstrap diode (BSD)
The bootstrap power supply is the most common technique
for supplying power to the high-side driver circuitry due
to its simplicity and low cost. As shown in Figure 5, the
bootstrap power supply consists of a bootstrap diode and
capacitor. The floating channel of level-shift gate drivers
is typically designed for bootstrap operation. Infineon SOI
gate drivers integrate the ultra-fast bootstrap diodes. The
low diode resistance of RBS ≤ 40 Ω enables a wide operating
range.
Integrated
bootstrap diode
VCC
DC+
VB
VBS
Bootstrap
capacitor
VGE
ILOAD
VCC
VS
VCEon
VFP
VSS
The Infineon SOI gate drivers with BSD can drive larger
IGBTs without the risk of self-heating, minimize BOM count,
and reduce system cost.
DC-
Figure 5:
Typical connection diagram with integrated bootstrap diode (BSD)
Low level-shift losses
Level-shift losses become a significant part as the operating
frequency increases. A level-shift circuit is used to transmit
the switching information from the low-side to the highside. The necessary charge of the transmission determines
the level-shift losses.
EiceDRIVER™ SOI level-shift gate drivers require a very low
charge to transmit the information. Minimizing level-shifting
power consumption allows design flexibility of higher
frequency operations, as well as longer lifetime, improved
system efficiency and application reliability.
In Figure 6, the thermal diagrams on the same PCB board
show a temperature difference of 55.6°C lower in the
power dissipation of the EiceDRIVER™ SOI gate driver
(2ED2106S06F).
Infineon SOI
HS+LS driver
Max. temperature
66.6°
120.3°
Standard
HS+LS driver
Max. temperature
122.2°
20.4°
Figure 6:
DC Bus voltage = 300 V; With CoolMOS™ P7 in D-Pak; 300 kHz switching
frequency
www.infineon.com/soi
9
Infineon gate driver IC
technologies
Infineon galvanically isolated coreless
transformer (CT) technology
Infineon coreless transformer (CT) technology is a magnetically coupled, galvanically isolated technology
which uses semiconductor manufacturing processes to integrate an on-chip transformer consisting of metal
spirals and silicon oxide insulation. The on-chip coreless transformers are used for transmitting switching
information and other signals between the input chip and output chip. The CT technology enables short
propagation delay, best-in-class delay matching, and strong robustness for driving SiC MOSFETs, GaN HEMTs,
state-of-the-art IGBTs, and MOSFETs.
Main benefits of Infineon CT technology:
› Galvanic isolation
(functional, basic, reinforced)
› Allows large voltage swings
of ±2300 V or larger
› Immunity against negative and
positive transients
› Low power losses
› Flexible configurations and features such as
- High output current (up to 18 A)
- Precise DESAT protection
- Active Miller clamp
- I2C configurability
- Isolation rating and certification
(UL 1577 and VDE 0884-11)
- 4 mm and 8 mm creepage
Robustness
› Extremely robust signal transfer independent of common mode noise
› Common mode transit immunity (CMTI) up to 300 V/ns
› Tight propagation-delay matching: tolerance improves application robustness without variations
due to aging, current, and temperature
Design flexibility
› Wide range of gate voltages up to 40 V, including negative gate voltage
› CT technology is ready for use with wide bandgap such as SiC MOSFETs and GaN HEMTs
› Closed-loop gate current control option
Precise timing control
Integrated ramp-based filter
› Precise, integrated filters reduce propagation-delay
variation over a wide range of operating conditions
› Integrated filters reduce the need of external filters
› Tight propagation delay allows minimum deadtime
improving system efficiency and decreasing
harmonic distortion
Input pad
structure
IN
GND
www.infineon.com/GDisolated
10
Infineon gate driver IC
technologies
Protection
› Reliable short-circuit detection via accurate desaturation
(DESAT) detection circuits (current source and comparator) protects the power switches from damage during
short-circuit condition
› Two-level turn-off (TLTO) for short-circuit current protection to lower collector-emitter voltage overshoot
› Active Miller clamping option protects against parasitic
turn-on due to high dV/dt
› Built in short-circuit clamping limits the gate voltage
during short circuit
DESAT protection
VCC2
VD
ID
DESAT
+15 V
RDESAT
DDESAT
9V
Logic
OUT
CDESAT
VCE
GND2
Safety certifications
› Safety certifications available for VDE 0884-11 and
UL 1577
For SiC MOSFET switching
› Ideal for ultra-fast switching of 650 V - 2000 V silicon
carbide power transistors such as CoolSiC™ SiC MOSFETs
› The EiceDRIVER™ isolated gate drivers incorporate the
most important key features and parameters for SiC
MOSFET driving:
– Accurate DESAT for short circuit protection
– Active Miller clamp for parasitic turn-on
– Tight propagation delay matching
– Precise input filters
– Wide output side supply range
– Negative gate voltage capability
– Extended common mode transient
immunity (CMTI) capability
Definitions of the various isolation types
Supplementary isolation
Basic isolation
Isolation of hazardous-live-parts
which provides basic protection
Functional isolation
Isolation between conductive parts
which is necessary only for the
proper functioning of the
equipment
Independent isolation applied in
addition to basic isolation for
fault protection
Galvanic
isolation
Sources: IEC 60664-1:2020,
VDE 0884-11, UL 1577
Double isolation
Isolation consisting of both
basic isolation and supplementary
isolation
Reinforced isolation
Isolation of hazardous-live-parts which
provides a degree of protection against
electric shock equivalent to
double isolation
11
Infineon gate driver IC
technologies
Choosing a gate driver IC
Gate driver
Isolation requirement
Galvanic Isolation
Non-isolated
Functional level shift
Basic (UL 1577 +
VDE)
Functional (UL 1577)
Reinforced (UL 1577 + VDE)
# of channels & configuration
2-Ch
1-Ch
2-Ch
4-Ch, 6-Ch,
8-Ch, 16-Ch
1-Ch
28 V
55 V
90 V
100 V
200 V
500 V
600 V
4-Ch
6-Ch
2-Ch
2-Ch
1-Ch
Half-bridge
High-side &
Low-side
Full-bridge
3-Phase
120 V
200 V
600 V
650 V
1200 V
200 V
500 V
600 V
650 V
1200 V
600 V
200 V
600 V
1200 V
650 V
1200 V
2300 V
200 V (SOI)
› 6EDL04N02
600 V (SOI)
› 6EDL04I06
› 6EDL04N06
600 V (JI)
› IR2136S
› IRS2334M
1200 V (JI)
› IR2233S
› IR2235S
1200 V (SOI)
› 6ED2230S12
650 V (GaN)
› 1EDF5673x
650 V (MOSFET)
› 1EDBx275F
1200 V (Compact)
› 1EDIxxx12MF
› 1EDIxxx12AF
1200 V (Enhanced)
› 1ED020I12-F2
1200 V (Auto)
› 1ED020I12FA2
› 1EDI2010AS
2300 V (Compact)
› 1ED31xxMU12F
› 1ED31xxMU12H
2300 V (Enhanced)
› 1ED34xxMU12M
› 1ED38xxMU12M
Isolation on
high-side only
Isolation on highside and low-side
650 V
1200 V
650 V
1200 V
650 V (Enhanced)
› 2ED020I06-FI
1200 V (Enhanced)
› 2ED020I12-FI
650 V (MOSFET)
› 2EDF72x5K
› 2EDFxx75F
› 2EDBx259x*
650 V (IGBT, SiC)
› 2EDF9275F
› 2EDB9259Y*
1200 V (Enhanced)
› 2ED020I12-F2
1-Ch
1-Ch
1200 V
650 V
1200 V
2300 V
Isolation on highside and low-side
Voltage class
22 V
25 V
40 V
65 V
200 V
22 V
24 V
25 V
75 V
105 V
650 V
Product family
22 V
› 1EDN75xx
› 1EDN85xx
25 V
› 1ED4417x
› IRS44273
65 V (Auto)
› AUIR324x
200 V (TDI)
› 1EDNx550
› 1EDN71x6U
22 V
› 2EDN743x
› 2EDN753x
› 2EDN853x
24 V
› 2ED24427
25 V
› IR(S)442x
75 V (Auto)
› 2ED2410-EM
105 V (Auto)
› 2ED4820-EM
Multi halfbridges
› TLE956x
› TLE9210x
› TLE9180x
› TLE7189F
100 V (JI)
› IRS10752L
200 V (JI)
› IRS20752L
500 V (JI)
› IR2125
600 V (JI)
› IR(S)21271S
› IRS25752L
600 V (Auto)
› AUIRS2118
120 V
› 2EDL8x2xG3C
200 V (JI)
› IRS200xS
600 V (JI)
› IR(S)2304
› IR(S)2153x
600 V (SOI)
› 2EDL05N06
› 2EDL23I06
600 V (Auto)
› AUIRS2181
650 V (SOI)
› 2ED2304
› 2ED2103
› 2ED2182
1200 V (JI)
› IR2214SS
200 V (JI)
› IR2010
› IRS2011S
500 V (JI)
› IR(S)2110S
600 V (JI)
› IR(S)2106
› IRS2113
› IRS2181
› IRS21867
650 V (SOI)
› 2ED2101S06
› 2ED2106S06
› 2ED2181S06
› 2ED2110S06
1200 V (JI)
› IR2213
600 V (JI)
› IRS24531
› IRS2453
1200 V (IGBT)
› 1EDI302xAS
1200 V (SiCFET)
› 1EDI303xAS
1200 V (Enhanced)
› 1ED020I12-B2
650 V (GaN)
› 1EDS5663H
1200 V (1ED-SRC)
› 1EDS20I12SV
2300 V (Compact)
› 1ED31xxMC12H
› 1ED32xxMC12H
2300 V (Enhanced)
› 1ED332xMC12N
› 1ED34xxMC12M
› 1ED38xxMC12M
650 V
› 2EDSxx65H
› 2EDRx25xx*
*Coming soon
12
13
Infineon power switch
technologies
Infineon power switch technologies
OptiMOS™ and StrongIRFET™ power MOSFET
20-300 V N-channel power MOSFETs
Infineon’s semiconductors are designed to bring more efficiency, power density and cost effectiveness. The full range of
OptiMOS™ and StrongIRFET™ power MOSFETs enables innovation and performance in applications such as switch mode
power supplies (SMPS), motor control and drives, inverters and computing.
Infineon’s highly innovative OptiMOS™ and StrongIRFET™ families consistently meet the highest quality and
performance demands in key specifications for power system design such as on-state resistance (RDS(on)) and figure
of merit characteristics.
OptiMOS™ power MOSFETs provide excellent best-in-class performance. Features include ultra-low RDS(on), as well as
low charge for high switching-frequency applications. StrongIRFET™ power MOSFETs are designed for rugged applications,
and are ideal for designs with a low switching frequency as well as those that require a high current-carrying capability.
Automotive qualified OptiMOS™ is also available.
Please refer to the application section and www.infineon.com/automotivemosfet
Technology development and product family positioning
OptiMOSTM
for broad switching frequency
StrongIRFETTM and IR MOSFETTM
for switching frequency
