IKD10N60RFAATMA1

IGBT IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage IKD10N60RFA TRENCHSTOPTMRC-Seriesforhardswitchingapplicationsupto30kHz Datasheet IndustrialPowerControl IKD10N60RFA TRENCHSTOPTMRC-DrivesFastSeries IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage  Features: C TRENCHSTOPTMReverseConducting(RC)technologyfor600V applicationsoffering •OptimizedEon,EoffandQrrforlowswitchinglosses •Operatingrangeof4to30kHz •SmoothswitchingperformanceleadingtolowEMIlevels •Verytightparameterdistribution •Maximumjunctiontemperature175°C •Shortcircuitcapabilityof5µs •Bestinclasscurrentversuspackagesizeperformance •QualifiedaccordingtoAEC-Q101 •Pb-freeleadplating;RoHScompliant(soldertemperature 260°C,MSL1) G E C CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ G E Applications: •Smalldrives •Piezoinjection •Automotivelighting/HID KeyPerformanceandPackageParameters Type IKD10N60RFA VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package 600V 10A 2.2V 175°C K10DRFA PG-TO252-3 2 Rev.2.1,2014-12-15 IKD10N60RFA TRENCHSTOPTMRC-DrivesFastSeries TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 3 Rev.2.1,2014-12-15 IKD10N60RFA TRENCHSTOPTMRC-DrivesFastSeries MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Collector-emittervoltage,Tvj≥25°C VCE 600 V DCcollectorcurrent,limitedbyTvjmax TC=25°C TC=100°C IC 20.0 10.0 A Pulsedcollectorcurrent,tplimitedbyTvjmax1) ICpuls 30.0 A Turn off safe operating area VCE≤600V,Tvj≤175°C,tp=1µs1) - 30.0 A Diodeforwardcurrent,limitedbyTvjmax TC=25°C TC=100°C IF 20.0 10.0 A Diodepulsedcurrent,tplimitedbyTvjmax1) IFpuls 30.0 A Gate-emitter voltage VGE ±20 V Short circuit withstand time VGE=15.0V,VCC≤400V Allowed number of short circuits < 1000 Time between short circuits: ≥ 1.0s Tvj=150°C tSC PowerdissipationTC=25°C Ptot 150.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C µs 5 Soldering temperature, reflow soldering (MSL1 according to JEDEC J-STA-020) °C 260 ThermalResistance Parameter Characteristic Symbol Conditions Max.Value Unit IGBT thermal resistance,2) junction - case Rth(j-c) 1.00 K/W Diode thermal resistance,3) junction - case Rth(j-c) 2.60 K/W Thermal resistance, min. footprint junction - ambient Rth(j-a) 75 K/W Thermal resistance, 6cm² Cu on PCB junction - ambient Rth(j-a) 50 K/W 1) 2) 3) Defined by design. Not subject to production test. Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the IGBT, is not possible using a thermocouple. Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the Diode, is not possible using a thermocouple. 4 Rev.2.1,2014-12-15 IKD10N60RFA TRENCHSTOPTMRC-DrivesFastSeries ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. 600 - - V VGE=15.0V,IC=10.0A Tvj=25°C Tvj=175°C - 2.20 2.30 2.50 - V - 2.10 2.00 2.40 - V 4.3 5.0 5.7 V StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA Collector-emitter saturation voltage VCEsat Diode forward voltage VF VGE=0V,IF=10.0A Tvj=25°C Tvj=175°C Gate-emitter threshold voltage VGE(th) IC=0.17mA,VCE=VGE Zero gate voltage collector current ICES VCE=600V,VGE=0V Tvj=25°C Tvj=175°C - 440.0 40.0 - µA Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=10V,IC=10.0A - 4.6 - S Integrated gate resistor rG 1) Ω none ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. - 655 - - 37 - - 22 - - 64.0 - nC - 7.0 - nH - A DynamicCharacteristic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG Internal emitter inductance measured 5mm (0.197 in.) from case LE Short circuit collector current Max. 1000 short circuits IC(SC) Time between short circuits: ≥ 1.0s 1) VCE=25V,VGE=0V,f=1MHz VCC=480V,IC=10.0A, VGE=15V VGE=15.0V,VCC≤400V, tSC≤5µs Tvj=25°C - 74 pF TypicalvalueoftransconductancedeterminedatTvj=175°C. 5 Rev.2.1,2014-12-15 IKD10N60RFA TRENCHSTOPTMRC-DrivesFastSeries SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 12 - ns - 15 - ns - 168 - ns - 18 - ns - 0.19 - mJ IGBTCharacteristic,atTvj=25°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff - 0.16 - mJ Total switching energy Ets - 0.35 - mJ - 72 - ns - 0.27 - µC - 9.1 - A - -146 - A/µs Tvj=25°C, VCC=400V,IC=10.0A, VGE=0.0/15.0V, RG(on)=26.0Ω,RG(off)=26.0Ω, Lσ=50nH,Cσ=30pF Lσ,CσfromFig.E DiodeCharacteristic,atTvj=25°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Tvj=25°C, VR=400V, IF=10.0A, diF/dt=750A/µs dirr/dt SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 12 - ns - 15 - ns - 178 - ns - 20 - ns - 0.31 - mJ IGBTCharacteristic,atTvj=175°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff - 0.21 - mJ Total switching energy Ets - 0.52 - mJ - 112 - ns - 0.62 - µC - 12.9 - A - -136 - A/µs Tvj=175°C, VCC=400V,IC=10.0A, VGE=0.0/15.0V, RG(on)=26.0Ω,RG(off)=26.0Ω, Lσ=50nH,Cσ=30pF Lσ,CσfromFig.E DiodeCharacteristic,atTvj=175°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Tvj=175°C, VR=400V, IF=10.0A, diF/dt=720A/µs dirr/dt 6 Rev.2.1,2014-12-15 IKD10N60RFA TRENCHSTOPTMRC-DrivesFastSeries 10 9 IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 8 7 6 5 4 3 10 not for linear use 1 2 1 0 0.1 1 10 0.1 100 1 f,SWITCHINGFREQUENCY[kHz] 10 100 1000 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 1. Collectorcurrentasafunctionofswitching frequency (Tvj≤175°C,Ta=55°C,D=0.5,VCE=400V, VGE=15/0V,rG=26Ω,PCBmountingwith thermal vias and heatsink, see Appnote: www.infineon.com/igbt) Figure 2. Forwardbiassafeoperatingarea (D=0,TC=25°C,Tvj≤175°C,VGE=15V,tp=1µs) 160 20 140 120 IC,COLLECTORCURRENT[A] Ptot,POWERDISSIPATION[W] 18 100 80 60 40 16 14 12 10 8 6 4 20 0 2 25 50 75 100 125 150 0 175 TC,CASETEMPERATURE[°C] 0 25 50 75 100 125 150 175 TC,CASETEMPERATURE[°C] Figure 3. Powerdissipationasafunctionofcase temperature (Tvj≤175°C) Figure 4. Collectorcurrentasafunctionofcase temperature (VGE≥15V,Tvj≤175°C) 7 Rev.2.1,2014-12-15 IKD10N60RFA TRENCHSTOPTMRC-DrivesFastSeries 30 30 VGE = 20V VGE = 20V 17V 25 17V 25 15V IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 15V 13V 20 11V 9V 15 7V 10 5 0 13V 20 11V 9V 15 7V 10 5 0 1 2 3 0 4 0 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 5. Typicaloutputcharacteristic (Tvj=25°C) 3 4 4.0 VCEsat,COLLECTOR-EMITTERSATURATION[V] Tj = 25°C Tj = 175°C 25 IC,COLLECTORCURRENT[A] 2 Figure 6. Typicaloutputcharacteristic (Tvj=175°C) 30 20 15 10 5 0 1 VCE,COLLECTOR-EMITTERVOLTAGE[V] 4 6 8 10 12 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 14 VGE,GATE-EMITTERVOLTAGE[V] IC = 1A IC = 5A IC = 10A IC = 20A 0 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 7. Typicaltransfercharacteristic (VCE=10V) Figure 8. Typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature (VGE=15V) 8 Rev.2.1,2014-12-15 IKD10N60RFA TRENCHSTOPTMRC-DrivesFastSeries 1000 td(off) tf td(on) tr td(off) tf td(on) tr t,SWITCHINGTIMES[ns] t,SWITCHINGTIMES[ns] 100 10 1 5.0 7.5 10.0 12.5 15.0 17.5 100 10 1 20.0 0 10 20 IC,COLLECTORCURRENT[A] 30 40 50 60 70 80 90 100 110 rG,GATERESISTOR[Ω] Figure 9. Typicalswitchingtimesasafunctionof collectorcurrent (inductiveload,Tvj=175°C,VCE=400V, VGE=15/0V,rG=26Ω,Dynamictestcircuitin Figure E) Figure 10. Typicalswitchingtimesasafunctionofgate resistor (inductiveload,Tvj=175°C,VCE=400V, VGE=15/0V,IC=10A,Dynamictestcircuitin Figure E) 7 VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V] t,SWITCHINGTIMES[ns] td(off) tf td(on) tr 100 10 25 50 75 100 125 150 6 5 4 3 2 1 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 11. Typicalswitchingtimesasafunctionof junctiontemperature (inductiveload,VCE=400V,VGE=15/0V, IC=10A,rG=26Ω,Dynamictestcircuitin Figure E) typ. min. max. 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 12. Gate-emitterthresholdvoltageasafunction ofjunctiontemperature (IC=0,17mA) 9 Rev.2.1,2014-12-15 IKD10N60RFA TRENCHSTOPTMRC-DrivesFastSeries 1.0 1.0 Eoff Eon Ets E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] Eoff Eon Ets 0.8 0.6 0.4 0.2 0.0 5.0 7.5 10.0 12.5 15.0 17.5 0.8 0.6 0.4 0.2 0.0 20.0 10 20 IC,COLLECTORCURRENT[A] Figure 13. Typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload,Tvj=175°C,VCE=400V, VGE=15/0V,rG=26Ω,Dynamictestcircuitin Figure E) 40 50 60 70 80 Figure 14. Typicalswitchingenergylossesasa functionofgateresistor (inductiveload,Tvj=175°C,VCE=400V, VGE=15/0V,IC=10A,Dynamictestcircuitin Figure E) 0.6 0.8 Eoff Eon Ets 0.7 0.5 E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] 30 rG,GATERESISTOR[Ω] 0.4 0.3 0.2 0.1 Eoff Eon Ets 0.6 0.5 0.4 0.3 0.2 0.1 0.0 25 50 75 100 125 150 0.0 300 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 15. Typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload,VCE=400V,VGE=15/0V, IC=10A,rG=26Ω,Dynamictestcircuitin Figure E) 325 350 375 400 425 450 VCE,COLLECTOR-EMITTERVOLTAGE[V] 10 Figure 16. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload,Tvj=175°C,VGE=15/0V, IC=10A,rG=26Ω,Dynamictestcircuitin Figure E) Rev.2.1,2014-12-15 IKD10N60RFA TRENCHSTOPTMRC-DrivesFastSeries 16 1000 VCC=120V VCC=480V Cies Coes Cres 12 C,CAPACITANCE[pF] VGE,GATE-EMITTERVOLTAGE[V] 14 10 8 6 100 4 2 0 0 10 20 30 40 50 60 10 70 0 QGE,GATECHARGE[nC] Figure 17. Typicalgatecharge (IC=10A) 15 20 25 30 12 140 tSC,SHORTCIRCUITWITHSTANDTIME[µs] IC(SC),SHORTCIRCUITCOLLECTORCURRENT[A] 10 Figure 18. Typicalcapacitanceasafunctionof collector-emittervoltage (VGE=0V,f=1MHz) 160 120 100 80 60 40 20 0 5 VCE,COLLECTOR-EMITTERVOLTAGE[V] 12 14 16 18 10 8 6 4 2 0 20 VGE,GATE-EMITTERVOLTAGE[V] 10 11 12 13 14 15 16 17 18 19 VGE,GATE-EMITTERVOLTAGE[V] Figure 19. Typicalshortcircuitcollectorcurrentasa functionofgate-emittervoltage (VCE≤400V,startatTvj=25°C) Figure 20. Shortcircuitwithstandtimeasafunctionof gate-emittervoltage (VCE≤400V,startatTvj=150°C) 11 Rev.2.1,2014-12-15 IKD10N60RFA TRENCHSTOPTMRC-DrivesFastSeries Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W] Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W] 1 D = 0.5 0.2 0.1 0.05 0.02 0.1 0.01 single pulse i: 1 2 3 4 ri[K/W]: 0.0972 0.4393 0.3919 0.0443 τi[s]: 1.1E-4 4.5E-4 2.0E-3 0.03487 0.01 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.1 i: 1 2 3 4 ri[K/W]: 0.3192 1.604 0.6161 0.0732 τi[s]: 6.4E-5 2.6E-4 1.6E-3 0.021807 0.01 1E-7 1 single pulse 1E-6 tp,PULSEWIDTH[s] 1E-5 1E-4 0.001 0.01 0.1 1 tp,PULSEWIDTH[s] Figure 21. IGBTtransientthermalimpedanceasa functionofpulsewidth(seepage42)) (D=tp/T) Figure 22. Diodetransientthermalimpedanceasa functionofpulsewidth(seepage43)) (D=tp/T) 150 0.8 Tj = 25°C, IF = 10A Tj = 175°C, IF = 10A Tj = 25°C, IF = 10A Tj = 175°C, IF = 10A 0.7 Qrr,REVERSERECOVERYCHARGE[µC] trr,REVERSERECOVERYTIME[ns] 125 100 75 50 25 0.6 0.5 0.4 0.3 0.2 0.1 0 700 900 1100 1300 1500 1700 0.0 700 1900 diF/dt,DIODECURRENTSLOPE[A/µs] 900 1100 1300 1500 1700 1900 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 23. Typicalreverserecoverytimeasafunction ofdiodecurrentslope (VR=400V) 12 Figure 24. Typicalreverserecoverychargeasa functionofdiodecurrentslope (VR=400V) Rev.2.1,2014-12-15 IKD10N60RFA TRENCHSTOPTMRC-DrivesFastSeries 30 0 Tj = 25°C, IF = 10A Tj = 175°C, IF = 10A 25 -200 dIrr/dt,diodepeakrateoffallofIrr[A/µs] Irr,REVERSERECOVERYCURRENT[A] Tj = 25°C, IF = 10A Tj = 175°C, IF = 10A 20 15 10 5 -400 -600 -800 -1000 0 700 900 1100 1300 1500 1700 -1200 700 1900 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 25. Typicalreverserecoverycurrentasa functionofdiodecurrentslope (VR=400V) 1300 1500 1700 1900 3.0 25 IF = 1A IF = 5A IF = 10A IF = 20A 2.5 VF,FORWARDVOLTAGE[V] IF,FORWARDCURRENT[A] 1100 Figure 26. Typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope (VR=400V) 30 20 Tj = 175°C, VGE = 0V Tj = 25°C, VGE = 0V 15 10 2.0 1.5 1.0 5 0 900 diF/dt,DIODECURRENTSLOPE[A/µs] 0 1 2 3 0.5 4 VF,FORWARDVOLTAGE[V] 0 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 27. Typicaldiodeforwardcurrentasafunction offorwardvoltage 13 Figure 28. Typicaldiodeforwardvoltageasafunction ofjunctiontemperature Rev.2.1,2014-12-15 IKD10N60RFA TRENCHSTOPTMRC-DrivesFastSeries PG - TO252 - 3 14 Rev.2.1,2014-12-15 IKD10N60RFA TRENCHSTOPTMRC-DrivesFastSeries VGE(t) I,V 90% VGE t rr = t a + t b Q rr = Q a + Q b dIF/dt a 10% VGE b t Qa IC(t) Qb dI 90% IC 90% IC 10% IC 10% IC Figure C. Definition of diode switching characteristics t VCE(t) t td(off) tf td(on) t tr Figure A. VGE(t) 90% VGE Figure D. 10% VGE t IC(t) CC 2% IC t Figure E. Dynamic test circuit Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor Cr, (only for ZVT switching) VCE(t) t2 E off = t4 VCE x IC x dt E t1 t1 on = VCE x IC x d t 2% VCE t3 t2 t3 t4 t Figure B. 15 Rev.2.1,2014-12-15 IKD10N60RFA TRENCHSTOPTM RC-Drives Fast Series Revision History IKD10N60RFA Revision: 2014-12-15, Rev. 2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2014-12-15 Final data sheet We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Published by Infineon Technologies AG 81726 Munich, Germany 81726 München, Germany © 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 16 Rev. 2.1, 2014-12-15