IKD10N60RFATMA1

IKD10N60RF TRENCHSTOPTMRC-DrivesFastSeries IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage  Features: C TRENCHSTOPTMReverseConducting(RC)technologyfor600V applicationsoffering •OptimizedEon,EoffandQrrforlowswitchinglosses •Operatingrangeof4to30kHz •SmoothswitchingperformanceleadingtolowEMIlevels •Verytightparameterdistribution •Maximumjunctiontemperature175°C •Shortcircuitcapabilityof5µs •Bestinclasscurrentversuspackagesizeperformance •QualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant(soldertemperature 260°C,MSL1) G E C CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ G Applications: E Domesticandindustrialdrives: •Compressors •Pumps •Fans KeyPerformanceandPackageParameters Type IKD10N60RF Datasheet www.infineon.com VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package 600V 10A 2.2V 175°C K10R60F PG-TO252-3 PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2.5 2017-09-26 IKD10N60RF TRENCHSTOPTMRC-DrivesFastSeries TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Datasheet 2 V2.5 2017-09-26 IKD10N60RF TRENCHSTOPTMRC-DrivesFastSeries MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Collector-emittervoltage,Tvj≥25°C VCE 600 V DCcollectorcurrent,limitedbyTvjmax Tc=25°C Tc=100°C IC 20.0 10.0 A Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 30.0 A Turn off safe operating area VCE≤600V,Tvj≤175°C,tp=1µs - 30.0 A Diodeforwardcurrent,limitedbyTvjmax Tc=25°C Tc=100°C IF 20.0 10.0 A Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 30.0 A Gate-emitter voltage VGE ±20 V Short circuit withstand time VGE=15.0V,VCC≤400V Allowed number of short circuits < 1000 Time between short circuits: ≥ 1.0s Tvj=150°C tSC PowerdissipationTc=25°C Ptot 150.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C µs 5 Soldering temperature, reflow soldering (MSL1 according to JEDEC J-STA-020) °C 260 ThermalResistance Parameter Symbol Conditions Value min. typ. max. Unit RthCharacteristics IGBT thermal resistance,1) junction - case Rth(j-c) - - 1.00 K/W Diode thermal resistance,2) junction - case Rth(j-c) - - 2.60 K/W Thermal resistance, min. footprint junction - ambient Rth(j-a) - - 75 K/W Thermal resistance, 6cm² Cu on PCB junction - ambient Rth(j-a) - - 50 K/W 1) 2) Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the IGBT, is not possible using a thermocouple. Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the Diode, is not possible using a thermocouple. Datasheet 3 V2.5 2017-09-26 IKD10N60RF TRENCHSTOPTMRC-DrivesFastSeries ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. 600 - - V VGE=15.0V,IC=10.0A Tvj=25°C Tvj=175°C - 2.20 2.30 2.50 - V - 2.10 2.00 2.40 - V 4.3 5.0 5.7 V VCE=600V,VGE=0V Tvj=25°C Tvj=175°C - - 40 1000 µA StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA Collector-emitter saturation voltage VCEsat Diode forward voltage VF VGE=0V,IF=10.0A Tvj=25°C Tvj=175°C Gate-emitter threshold voltage VGE(th) IC=0.17mA,VCE=VGE Zero gate voltage collector current1) ICES Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=10.0A - 4.6 - S Integrated gate resistor rG Ω none ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. - 655 - - 37 - - 22 - - 64.0 - nC - 7.0 - nH - A DynamicCharacteristic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG Internal emitter inductance measured 5mm (0.197 in.) from case LE Short circuit collector current Max. 1000 short circuits IC(SC) Time between short circuits: ≥ 1.0s VCE=25V,VGE=0V,f=1MHz VCC=480V,IC=10.0A, VGE=15V VGE=15.0V,VCC≤400V, tSC≤5µs Tvj=25°C - 74 pF SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 12 - ns - 15 - ns - 168 - ns - 18 - ns - 0.19 - mJ IGBTCharacteristic,atTvj=25°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff - 0.16 - mJ Total switching energy Ets - 0.35 - mJ 1) Tvj=25°C, VCC=400V,IC=10.0A, VGE=0.0/15.0V, RG(on)=26.0Ω,RG(off)=26.0Ω, Lσ=50nH,Cσ=30pF Lσ,CσfromFig.E Not subject to production test - verified by design/characterization Datasheet 4 V2.5 2017-09-26 IKD10N60RF TRENCHSTOPTMRC-DrivesFastSeries DiodeCharacteristic,atTvj=25°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Tvj=25°C, VR=400V, IF=10.0A, diF/dt=750A/µs dirr/dt - 72 - ns - 0.27 - µC - 9.1 - A - -146 - A/µs SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 12 - ns - 15 - ns - 178 - ns - 20 - ns - 0.31 - mJ IGBTCharacteristic,atTvj=175°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff - 0.21 - mJ Total switching energy Ets - 0.52 - mJ - 112 - ns - 0.62 - µC - 12.9 - A - -136 - A/µs Tvj=175°C, VCC=400V,IC=10.0A, VGE=0.0/15.0V, RG(on)=26.0Ω,RG(off)=26.0Ω, Lσ=50nH,Cσ=30pF Lσ,CσfromFig.E DiodeCharacteristic,atTvj=175°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Datasheet Tvj=175°C, VR=400V, IF=10.0A, diF/dt=720A/µs dirr/dt 5 V2.5 2017-09-26 IKD10N60RF TRENCHSTOPTMRC-DrivesFastSeries 10 9 10 IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 8 7 6 5 4 3 not for linear use 1 2 1 0 0.1 1 10 0.1 100 1 f,SWITCHINGFREQUENCY[kHz] 10 100 1000 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 1. Collectorcurrentasafunctionofswitching frequency (Tvj≤175°C,Ta=55°C,D=0.5,VCE=400V, VGE=15/0V,rG=26Ω,PCBmountingwith thermal vias and heatsink, see Appnote: www.infineon.com/igbt) Figure 2. Forwardbiassafeoperatingarea (D=0,TC=25°C,Tvj≤175°C;VGE=15V) 160 20 140 120 16 IC,COLLECTORCURRENT[A] Ptot,POWERDISSIPATION[W] 18 100 80 60 40 14 12 10 8 6 4 20 0 2 25 50 75 100 125 150 0 175 TC,CASETEMPERATURE[°C] Figure 3. Powerdissipationasafunctionofcase temperature (Tvj≤175°C) Datasheet 0 25 50 75 100 125 150 175 TC,CASETEMPERATURE[°C] Figure 4. Collectorcurrentasafunctionofcase temperature (VGE≥15V,Tvj≤175°C) 6 V2.5 2017-09-26 IKD10N60RF TRENCHSTOPTMRC-DrivesFastSeries 30 30 VGE = 20V VGE = 20V 17V 25 17V 25 15V IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 15V 13V 20 11V 9V 7V 15 10 13V 20 9V 7V 15 10 5 0 11V 5 0 1 2 3 0 4 0 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 5. Typicaloutputcharacteristic (Tvj=25°C) 3 4 4.0 Tj = 25°C Tj = 175°C 20 15 10 5 4 6 8 10 12 3.0 2.5 2.0 1.5 1.0 0.5 0.0 14 VGE,GATE-EMITTERVOLTAGE[V] Figure 7. Typicaltransfercharacteristic (VCE=10V) Datasheet IC = 1A IC = 5A IC = 10A IC = 20A 3.5 VCEsat,COLLECTOR-EMITTERSATURATION[V] 25 IC,COLLECTORCURRENT[A] 2 Figure 6. Typicaloutputcharacteristic (Tvj=175°C) 30 0 1 VCE,COLLECTOR-EMITTERVOLTAGE[V] 0 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 8. Typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature (VGE=15V) 7 V2.5 2017-09-26 IKD10N60RF TRENCHSTOPTMRC-DrivesFastSeries 1000 td(off) tf td(on) tr td(off) tf td(on) tr t,SWITCHINGTIMES[ns] t,SWITCHINGTIMES[ns] 100 10 1 5.0 7.5 10.0 12.5 15.0 17.5 100 10 1 20.0 0 10 20 IC,COLLECTORCURRENT[A] 30 40 50 60 70 80 90 100 110 rG,GATERESISTOR[Ω] Figure 9. Typicalswitchingtimesasafunctionof collectorcurrent (inductiveload,Tvj=175°C,VCE=400V, VGE=15/0V,rG=26Ω,Dynamictestcircuitin Figure E) Figure 10. Typicalswitchingtimesasafunctionofgate resistor (inductiveload,Tvj=175°C,VCE=400V, VGE=15/0V,IC=10A,Dynamictestcircuitin Figure E) 7 100 10 25 50 typ. min. max. VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V] t,SWITCHINGTIMES[ns] td(off) tf td(on) tr 75 100 125 150 6 5 4 3 2 1 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 11. Typicalswitchingtimesasafunctionof junctiontemperature (inductiveload,VCE=400V,VGE=15/0V, IC=10A,rG=26Ω,Dynamictestcircuitin Figure E) Datasheet 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 12. Gate-emitterthresholdvoltageasafunction ofjunctiontemperature (IC=0,17mA) 8 V2.5 2017-09-26 IKD10N60RF TRENCHSTOPTMRC-DrivesFastSeries 1.2 1.0 Eoff Eon Ets Eoff Eon Ets 0.8 E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] 1.0 0.8 0.6 0.4 0.6 0.4 0.2 0.2 0.0 5.0 7.5 10.0 12.5 15.0 17.5 0.0 20.0 10 20 IC,COLLECTORCURRENT[A] 30 40 50 60 70 80 rG,GATERESISTOR[Ω] Figure 13. Typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload,Tvj=175°C,VCE=400V, VGE=15/0V,rG=26Ω,Dynamictestcircuitin Figure E) Figure 14. Typicalswitchingenergylossesasa functionofgateresistor (inductiveload,Tvj=175°C,VCE=400V, VGE=15/0V,IC=10A,Dynamictestcircuitin Figure E) 0.6 0.8 Eoff Eon Ets 0.7 Eoff Eon Ets E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] 0.5 0.4 0.3 0.2 0.6 0.5 0.4 0.3 0.2 0.1 0.1 0.0 25 50 75 100 125 150 0.0 300 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 15. Typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload,VCE=400V,VGE=15/0V, IC=10A,rG=26Ω,Dynamictestcircuitin Figure E) Datasheet 325 350 375 400 425 450 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 16. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload,Tvj=175°C,VGE=15/0V, IC=10A,rG=26Ω,Dynamictestcircuitin Figure E) 9 V2.5 2017-09-26 IKD10N60RF TRENCHSTOPTMRC-DrivesFastSeries 16 1000 VCC=120V VCC=480V Cies Coes Cres 12 C,CAPACITANCE[pF] VGE,GATE-EMITTERVOLTAGE[V] 14 10 8 6 100 4 2 0 0 10 20 30 40 50 60 10 70 0 QGE,GATECHARGE[nC] Figure 17. Typicalgatecharge (IC=10A) 10 15 20 25 30 Figure 18. Typicalcapacitanceasafunctionof collector-emittervoltage (VGE=0V,f=1MHz) 160 12 140 tSC,SHORTCIRCUITWITHSTANDTIME[µs] IC(SC),SHORTCIRCUITCOLLECTORCURRENT[A] 5 VCE,COLLECTOR-EMITTERVOLTAGE[V] 120 100 80 60 40 10 8 6 4 2 20 0 12 14 16 18 0 20 VGE,GATE-EMITTERVOLTAGE[V] Figure 19. Typicalshortcircuitcollectorcurrentasa functionofgate-emittervoltage (VCE≤400V,startatTvj=25°C) Datasheet 10 11 12 13 14 15 16 17 18 19 VGE,GATE-EMITTERVOLTAGE[V] Figure 20. Shortcircuitwithstandtimeasafunctionof gate-emittervoltage (VCE≤400V,startatTvj=150°C) 10 V2.5 2017-09-26 IKD10N60RF TRENCHSTOPTMRC-DrivesFastSeries Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W] Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W] 1 D = 0.5 0.2 0.1 0.05 0.02 0.1 0.01 single pulse 1 D = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse 0.1 i: 1 2 3 4 ri[K/W]: 0.0972 0.4393 0.3919 0.0443 τi[s]: 1.1E-4 4.5E-4 2.0E-3 0.03487 0.01 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 i: 1 2 3 4 ri[K/W]: 0.3192 1.604 0.6161 0.0732 τi[s]: 6.4E-5 2.6E-4 1.6E-3 0.021807 0.01 1E-7 1 1E-6 tp,PULSEWIDTH[s] 1E-5 1E-4 0.001 0.01 0.1 1 tp,PULSEWIDTH[s] Figure 21. IGBTtransientthermalimpedanceasa functionofpulsewidth1)(seepage4) (D=tp/T) Figure 22. Diodetransientthermalimpedanceasa functionofpulsewidth2)(seepage4) (D=tp/T) 150 0.8 Tj = 25°C, IF = 10A Tj = 175°C, IF = 10A Tj = 25°C, IF = 10A Tj = 175°C, IF = 10A 0.7 Qrr,REVERSERECOVERYCHARGE[µC] trr,REVERSERECOVERYTIME[ns] 125 100 75 50 25 0.6 0.5 0.4 0.3 0.2 0.1 0 700 900 1100 1300 1500 1700 0.0 700 1900 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 23. Typicalreverserecoverytimeasafunction ofdiodecurrentslope (VR=400V) Datasheet 900 1100 1300 1500 1700 1900 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 24. Typicalreverserecoverychargeasa functionofdiodecurrentslope (VR=400V) 11 V2.5 2017-09-26 IKD10N60RF TRENCHSTOPTMRC-DrivesFastSeries 30 0 Tj = 25°C, IF = 10A Tj = 175°C, IF = 10A 25 -200 dIrr/dt,diodepeakrateoffallofIrr[A/µs] Irr,REVERSERECOVERYCURRENT[A] Tj = 25°C, IF = 10A Tj = 175°C, IF = 10A 20 15 10 5 -400 -600 -800 -1000 0 700 900 1100 1300 1500 1700 -1200 700 1900 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 25. Typicalreverserecoverycurrentasa functionofdiodecurrentslope (VR=400V) 1300 1500 1700 1900 3.0 25 IF = 1A IF = 5A IF = 10A IF = 20A 2.5 VF,FORWARDVOLTAGE[V] IF,FORWARDCURRENT[A] 1100 Figure 26. Typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope (VR=400V) 30 20 Tj = 175°C, VGE = 0V Tj = 25°C, VGE = 0V 15 10 2.0 1.5 1.0 5 0 900 diF/dt,DIODECURRENTSLOPE[A/µs] 0 1 2 3 0.5 4 VF,FORWARDVOLTAGE[V] Figure 27. Typicaldiodeforwardcurrentasafunction offorwardvoltage Datasheet 0 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 28. Typicaldiodeforwardvoltageasafunction ofjunctiontemperature 12 V2.5 2017-09-26 IKD10N60RF TRENCHSTOPTMRC-DrivesFastSeries Package Drawing PG-TO252-3 A A1 b b2 b3 c c2 D D1 E E1 e e1 N H L L3 L4 Datasheet DOCUMENT NO. Z8B00003328 MILLIMETERS DIM MIN 2.16 0.00 0.64 0.65 4,95 0.46 0.40 5.97 5.02 6.35 4.32 MAX 2.41 0.15 0.89 1.15 5.50 0.61 0.98 6.22 5.84 6.73 5.21 2.29 (BSC) 4.57 (BSC) SCALE 2.5 0 2.5 5mm EUROPEAN PROJECTION 3 9.40 1.18 0.89 0.51 0 ISSUE DATE 05-02-2016 10.48 1.78 1.27 1.02 REVISION 06 13 V2.5 2017-09-26 IKD10N60RF TRENCHSTOPTMRC-DrivesFastSeries Testing Conditions VGE(t) I,V 90% VGE t rr = t a + t b Q rr = Q a + Q b dIF/dt a 10% VGE b t Qa IC(t) Qb dI 90% IC 90% IC 10% IC 10% IC Figure C. Definition of diode switching characteristics t VCE(t) t td(off) tf td(on) t tr Figure A. VGE(t) 90% VGE Figure D. 10% VGE t IC(t) CC 2% IC t Figure E. Dynamic test circuit Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor Cr, (only for ZVT switching) VCE(t) t2 E off = t4 VCE x IC x dt E t1 t1 on = VCE x IC x d t 2% VCE t3 t2 t3 t4 t Figure B. Datasheet 14 V2.5 2017-09-26 IKD10N60RF TRENCHSTOPTMRC-DrivesFastSeries RevisionHistory IKD10N60RF Revision:2017-09-26,Rev.2.5 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2012-02-24 Final data sheet 2.2 2013-12-10 New value ICES max limit at 175°C 2.3 2014-02-26 Without PB free logo 2.4 2014-03-12 Storage temp -55...+150°C 2.5 2017-09-26 Update Fig. 13 E(Ic) Datasheet 15 V2.5 2017-09-26 Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.     Publishedby InfineonTechnologiesAG 81726München,Germany ©InfineonTechnologiesAG2018. AllRightsReserved. ImportantNotice Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”).Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/orany informationregardingtheapplicationoftheproduct,InfineonTechnologiesherebydisclaimsanyandallwarrantiesand liabilitiesofanykind,includingwithoutlimitationwarrantiesofnon-infringementofintellectualpropertyrightsofanythird party. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseof theproductofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityof customer’stechnicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthe completenessoftheproductinformationgiveninthisdocumentwithrespecttosuchapplication. Forfurtherinformationontheproduct,technology,deliverytermsandconditionsandpricespleasecontactyournearest InfineonTechnologiesoffice(www.infineon.com). PleasenotethatthisproductisnotqualifiedaccordingtotheAECQ100orAECQ101documentsoftheAutomotive ElectronicsCouncil. Warnings Duetotechnicalrequirementsproductsmaycontaindangeroussubstances.Forinformationonthetypesinquestion pleasecontactyournearestInfineonTechnologiesoffice. ExceptasotherwiseexplicitlyapprovedbyInfineonTechnologiesinawrittendocumentsignedbyauthorized representativesofInfineonTechnologies,InfineonTechnologies’productsmaynotbeusedinanyapplicationswherea failureoftheproductoranyconsequencesoftheusethereofcanreasonablybeexpectedtoresultinpersonalinjury.