IKD15N60R

IGBT IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage IKD15N60R 600VTRENCHSTOPTMRC-Seriesforhardswitchingapplications Datasheet IndustrialPowerControl IKD15N60R TRENCHSTOPTMRC-Seriesforhardswitchingapplications IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage  Features: C TRENCHSTOPTMReverseConducting(RC)technologyfor600V applicationsoffering •OptimisedVCEsatandVFforlowconductionlosses •SmoothswitchingperformanceleadingtolowEMIlevels •Verytightparameterdistribution •Operatingrangeof1to20kHz •Maximumjunctiontemperature175°C •Shortcircuitcapabilityof5µs •Bestinclasscurrentversuspackagesizeperformance •QualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant(forPG-TO252:solder temperature260°C,MSL1) •CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ G E C Applications: G •Consumermotordrives E KeyPerformanceandPackageParameters Type IKD15N60R Datasheet www.infineon.com VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package 600V 15A 1.65V 175°C K15R60 PG-TO252-3 PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2.4 2014-03-12 IKD15N60R TRENCHSTOPTMRC-Seriesforhardswitchingapplications TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 Datasheet 3 V2.4 2014-03-12 IKD15N60R TRENCHSTOPTMRC-Seriesforhardswitchingapplications MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Collector-emittervoltage,Tvj≥25°C VCE 600 V DCcollectorcurrent,limitedbyTvjmax Tc=25°C Tc=100°C IC 30.0 15.0 A Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 45.0 A Turn off safe operating area VCE≤600V,Tvj≤175°C,tp=1µs - 45.0 A Diodeforwardcurrent,limitedbyTvjmax Tc=25°C Tc=100°C IF 30.0 15.0 A Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 45.0 A Gate-emitter voltage VGE ±20 V Short circuit withstand time VGE=15.0V,VCC≤400V Allowed number of short circuits < 1000 Time between short circuits: ≥ 1.0s Tvj=150°C tSC PowerdissipationTc=25°C Ptot 250.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C µs 5 Soldering temperature, reflow soldering (MSL1 according to JEDEC J-STA-020) °C 260 ThermalResistance Parameter Symbol Conditions Value min. typ. max. Unit RthCharacteristics IGBT thermal resistance,1) junction - case Rth(j-c) - - 0.60 K/W Diode thermal resistance,2) junction - case Rth(j-c) - - 2.00 K/W Thermal resistance, min. footprint junction - ambient Rth(j-a) - - 75 K/W Thermal resistance, 6cm² Cu on PCB junction - ambient Rth(j-a) - - 50 K/W 1) 2) Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the IGBT, is not possible using a thermocouple. Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the Diode, is not possible using a thermocouple. Datasheet 4 V2.4 2014-03-12 IKD15N60R TRENCHSTOPTMRC-Seriesforhardswitchingapplications ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. 600 - - V VGE=15.0V,IC=15.0A Tvj=25°C Tvj=175°C - 1.65 1.85 2.10 - V - 1.70 1.70 2.10 - V 4.3 5.0 5.7 V VCE=600V,VGE=0V Tvj=25°C Tvj=175°C - - 40 1000 µA StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA Collector-emitter saturation voltage VCEsat Diode forward voltage VF VGE=0V,IF=15.0A Tvj=25°C Tvj=175°C Gate-emitter threshold voltage VGE(th) IC=0.25mA,VCE=VGE Zero gate voltage collector current1) ICES Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=15.0A - 9.4 - S Integrated gate resistor rG Ω none ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. - 961 - - 53 - - 33 - VCC=480V,IC=15.0A, VGE=15V - 90.0 - nC VGE=15.0V,VCC≤400V, tSC≤5µs Tvj=25°C - - A DynamicCharacteristic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG Short circuit collector current Max. 1000 short circuits IC(SC) Time between short circuits: ≥ 1.0s VCE=25V,VGE=0V,f=1MHz 112 pF SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 16 - ns - 10 - ns - 183 - ns - 136 - ns - 0.37 - mJ IGBTCharacteristic,atTvj=25°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff - 0.53 - mJ Total switching energy Ets - 0.90 - mJ 1) Tvj=25°C, VCC=400V,IC=15.0A, VGE=0.0/15.0V, RG(on)=15.0Ω,RG(off)=15.0Ω, Lσ=60nH,Cσ=40pF Lσ,CσfromFig.E Not subject to production test - verified by design/characterization Datasheet 5 V2.4 2014-03-12 IKD15N60R TRENCHSTOPTMRC-Seriesforhardswitchingapplications DiodeCharacteristic,atTvj=25°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Tvj=25°C, VR=400V, IF=15.0A, diF/dt=1300A/µs dirr/dt - 110 - ns - 0.76 - µC - 20.5 - A - -1640 - A/µs SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 15 - ns - 11 - ns - 212 - ns - 218 - ns - 0.41 - mJ IGBTCharacteristic,atTvj=175°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff - 0.84 - mJ Total switching energy Ets - 1.25 - mJ - 190 - ns - 1.70 - µC - 27.0 - A - -280 - A/µs Tvj=175°C, VCC=400V,IC=15.0A, VGE=0.0/15.0V, RG(on)=15.0Ω,RG(off)=15.0Ω, Lσ=60nH,Cσ=40pF Lσ,CσfromFig.E DiodeCharacteristic,atTvj=175°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Datasheet Tvj=175°C, VR=400V, IF=15.0A, diF/dt=1300A/µs dirr/dt 6 V2.4 2014-03-12 IKD15N60R TRENCHSTOPTMRC-Seriesforhardswitchingapplications 12 11 9 IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 10 8 7 6 5 4 3 10 tp=1µs 10µs 20µs 50µs 1 200µs 500µs DC 2 1 0 Ptot=8,6W, Rthja=8K/W 0.1 1 10 0.1 100 1 f,SWITCHINGFREQUENCY[kHz] 10 100 1000 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 1. Collectorcurrentasafunctionofswitching frequency (Tvj≤175°C, Ta=55°C, D=0.5, VCE=400V, VGE=15/0V, rG=15Ω, PCB mounting with thermal vias and heatsink, see Appnote: www.infineon.com/igbt) Figure 2. Forwardbiassafeoperatingarea (D=0,TC=25°C,Tvj≤175°C;VGE=15V) 250 35 30 IC,COLLECTORCURRENT[A] Ptot,POWERDISSIPATION[W] 200 150 100 25 20 15 10 50 5 0 25 50 75 100 125 150 0 175 TC,CASETEMPERATURE[°C] Figure 3. Powerdissipationasafunctionofcase temperature (Tvj≤175°C) Datasheet 0 25 50 75 100 125 150 175 TC,CASETEMPERATURE[°C] Figure 4. Collectorcurrentasafunctionofcase temperature (VGE≥15V,Tvj≤175°C) 7 V2.4 2014-03-12 IKD15N60R TRENCHSTOPTMRC-Seriesforhardswitchingapplications 45 45 40 40 35 VGE=20V IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 35 17V 30 15V 13V 25 11V 20 9V 7V 15 17V 30 20 5 2 3 9V 7V 15 5 1 13V 11V 10 0 15V 25 10 0 VGE=20V 0 4 0 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 5. Typicaloutputcharacteristic (Tvj=25°C) 3 4 3.5 Tj=25°C Tj=175°C VCEsat,COLLECTOR-EMITTERSATURATION[V] 40 35 IC,COLLECTORCURRENT[A] 2 Figure 6. Typicaloutputcharacteristic (Tvj=175°C) 45 30 25 20 15 10 5 0 1 VCE,COLLECTOR-EMITTERVOLTAGE[V] 4 6 8 10 12 3.0 2.5 2.0 1.5 1.0 0.5 0.0 14 VGE,GATE-EMITTERVOLTAGE[V] Figure 7. Typicaltransfercharacteristic (VCE=10V) Datasheet IC=7.5A IC=15A IC=30A 0 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 8. Typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature (VGE=15V) 8 V2.4 2014-03-12 IKD15N60R TRENCHSTOPTMRC-Seriesforhardswitchingapplications 1000 1000 t,SWITCHINGTIMES[ns] t,SWITCHINGTIMES[ns] td(off) tf td(on) tr td(off) tf td(on) tr 100 10 1 0 5 10 15 20 25 100 10 1 30 0 10 IC,COLLECTORCURRENT[A] Figure 9. Typicalswitchingtimesasafunctionof collectorcurrent (inductiveload,Tvj=175°C,VCE=400V, VGE=15/0V,rG=15Ω,Dynamictestcircuitin Figure E) 40 50 7 100 10 25 50 typ. min. max. VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V] td(off) tf td(on) tr t,SWITCHINGTIMES[ns] 30 Figure 10. Typicalswitchingtimesasafunctionofgate resistor (inductiveload,Tvj=175°C,VCE=400V, VGE=15/0V,IC=15A,Dynamictestcircuitin Figure E) 1000 1 20 rG,GATERESISTOR[Ω] 75 100 125 150 6 5 4 3 2 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 11. Typicalswitchingtimesasafunctionof junctiontemperature (inductiveload,VCE=400V,VGE=15/0V, IC=15A,rG=15Ω,Dynamictestcircuitin Figure E) Datasheet 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 12. Gate-emitterthresholdvoltageasafunction ofjunctiontemperature (IC=0.25mA) 9 V2.4 2014-03-12 IKD15N60R TRENCHSTOPTMRC-Seriesforhardswitchingapplications 2.5 1.8 Eoff Eon Ets 1.5 2.0 E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] Eoff Eon Ets 1.5 1.0 0.5 0.0 1.2 0.9 0.6 0.3 0 5 10 15 20 25 0.0 30 0 10 IC,COLLECTORCURRENT[A] Figure 13. Typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload,Tvj=175°C,VCE=400V, VGE=15/0V,rG=15Ω,Dynamictestcircuitin Figure E) 40 50 1.5 Eoff Eon Ets E,SWITCHINGENERGYLOSSES[mJ] Eoff Eon Ets E,SWITCHINGENERGYLOSSES[mJ] 30 Figure 14. Typicalswitchingenergylossesasa functionofgateresistor (inductiveload,Tvj=175°C,VCE=400V, VGE=15/0V,IC=15A,Dynamictestcircuitin Figure E) 1.5 1.0 0.5 0.0 20 rG,GATERESISTOR[Ω] 25 50 75 100 125 150 Datasheet 0.5 0.0 300 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 15. Typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload,VCE=400V,VGE=15/0V, IC=15A,rG=15Ω,Dynamictestcircuitin Figure E) 1.0 350 400 450 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 16. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload,Tvj=175°C,VGE=15/0V, IC=15A,rG=15Ω,Dynamictestcircuitin Figure E) 10 V2.4 2014-03-12 IKD15N60R TRENCHSTOPTMRC-Seriesforhardswitchingapplications 16 120V 480V 1000 Cies Coes Cres 12 C,CAPACITANCE[pF] VGE,GATE-EMITTERVOLTAGE[V] 14 10 8 6 100 4 2 0 0 20 40 60 80 10 100 0 QGE,GATECHARGE[nC] Figure 17. Typicalgatecharge (IC=15A) 15 20 25 30 14 tSC,SHORTCIRCUITWITHSTANDTIME[µs] IC(SC),SHORTCIRCUITCOLLECTORCURRENT[A] 10 Figure 18. Typicalcapacitanceasafunctionof collector-emittervoltage (VGE=0V,f=1MHz) 175 150 125 100 75 50 5 VCE,COLLECTOR-EMITTERVOLTAGE[V] 12 14 16 18 VGE,GATE-EMITTERVOLTAGE[V] Datasheet 10 8 6 4 2 0 20 Figure 19. Typicalshortcircuitcollectorcurrentasa functionofgate-emittervoltage (VCE≤400V,startatTvj=25°C) 12 10 11 12 13 14 15 VGE,GATE-EMITTERVOLTAGE[V] Figure 20. Shortcircuitwithstandtimeasafunctionof gate-emittervoltage (VCE≤400V,startatTvj≤150°C) 11 V2.4 2014-03-12 IKD15N60R TRENCHSTOPTMRC-Seriesforhardswitchingapplications Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W] Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W] 1 D=0.5 0.2 0.1 0.1 0.05 0.02 0.01 single pulse 0.01 1 D=0.5 0.2 0.1 0.05 0.02 0.01 single pulse 0.1 i: 1 2 3 4 ri[K/W]: 0.0478 0.3033 0.2438 0.0281 τi[s]: 9.7E-5 4.4E-4 2.0E-3 0.03723 0.001 1E-7 1E-6 1E-5 1E-4 0.001 0.01 i: 1 2 3 4 ri[K/W]: 0.393 1.0808 0.4767 0.0568 τi[s]: 1.2E-4 3.4E-4 1.9E-3 0.02678 0.1 0.01 1E-7 1 1E-6 1E-5 tp,PULSEWIDTH[s] Figure 21. IGBTtransientthermalimpedanceasa functionofpulsewidth1)(seepage4) (D=tp/T) 0.1 1 Tj=175°C, IF = 15A Tj=25°C, IF = 15A Qrr,REVERSERECOVERYCHARGE[µC] 200 trr,REVERSERECOVERYTIME[ns] 0.01 2.00 Tj=175°C, IF = 15A Tj=25°C, IF = 15A 175 150 125 100 1100 1200 1300 1400 1500 1.75 1.50 1.25 1.00 0.75 0.50 1000 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 23. Typicalreverserecoverytimeasafunction ofdiodecurrentslope (VR=400V) Datasheet 0.001 Figure 22. Diodetransientthermalimpedanceasa functionofpulsewidth2)(seepage4) (D=tp/T) 225 75 1000 1E-4 tp,PULSEWIDTH[s] 1100 1200 1300 1400 1500 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 24. Typicalreverserecoverychargeasa functionofdiodecurrentslope (VR=400V) 12 V2.4 2014-03-12 IKD15N60R TRENCHSTOPTMRC-Seriesforhardswitchingapplications 30.0 0 Tj=175°C, IF = 15A Tj=25°C, IF = 15A 27.5 dIrr/dt,diodepeakrateoffallofIrr[A/µs] Irr,REVERSERECOVERYCURRENT[A] Tj=175°C, IF = 15A Tj=25°C, IF = 15A 25.0 22.5 -400 -800 -1200 20.0 -1600 17.5 15.0 1000 1100 1200 1300 1400 1500 -2000 1000 diF/dt,DIODECURRENTSLOPE[A/µs] 1100 1200 1300 1400 1500 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 25. Typicalreverserecoverycurrentasa functionofdiodecurrentslope (VR=400V) Figure 26. Typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope (VR=400V) 45 2.5 Tj=25°C, UG=0V IF=7.5A IF=15A IF=30A Tj=175°C, UG=0V 40 VF,FORWARDVOLTAGE[V] IF,FORWARDCURRENT[A] 35 30 25 20 15 2.0 1.5 10 5 0 0 1 2 1.0 3 VF,FORWARDVOLTAGE[V] Figure 27. Typicaldiodeforwardcurrentasafunction offorwardvoltage Datasheet 0 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 28. Typicaldiodeforwardvoltageasafunction ofjunctiontemperature 13 V2.4 2014-03-12 IKD15N60R TRENCHSTOPTMRC-Seriesforhardswitchingapplications Package Drawing PG-TO252-3 A A1 b b2 b3 c c2 D D1 E E1 e e1 N H L L3 L4 Datasheet DOCUMENT NO. Z8B00003328 MILLIMETERS DIM MIN 2.16 0.00 0.64 0.65 4,95 0.46 0.40 5.97 5.02 6.35 4.32 MAX 2.41 0.15 0.89 1.15 5.50 0.61 0.98 6.22 5.84 6.73 5.21 2.29 (BSC) 4.57 (BSC) SCALE 2.5 0 2.5 5mm EUROPEAN PROJECTION 3 9.40 1.18 0.89 0.51 0 ISSUE DATE 05-02-2016 10.48 1.78 1.27 1.02 REVISION 06 14 V2.4 2014-03-12 IKD15N60R TRENCHSTOPTMRC-Seriesforhardswitchingapplications Testing Conditions VGE(t) I,V 90% VGE t rr = t a + t b Q rr = Q a + Q b dIF/dt a 10% VGE b t Qa IC(t) Qb dI 90% IC 90% IC 10% IC 10% IC Figure C. Definition of diode switching characteristics t VCE(t) t td(off) tf td(on) t tr Figure A. VGE(t) 90% VGE Figure D. 10% VGE t IC(t) CC 2% IC t Figure E. Dynamic test circuit Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor Cr, (only for ZVT switching) VCE(t) t2 E off = t4 VCE x IC x dt E t1 t1 on = VCE x IC x d t 2% VCE t3 t2 t3 t4 t Figure B. Datasheet 15 V2.4 2014-03-12 IKD15N60R TRENCHSTOPTMRC-Seriesforhardswitchingapplications RevisionHistory IKD15N60R Revision:2014-03-12,Rev.2.4 Previous Revision Revision Date Subjects (major changes since last revision) 0.1 2010-02-01 - 2.1 2011-01-17 Release of final datasheet 2.2 2013-02-19 Change package 2.3 2014-02-26 Without PB free logo 2.4 2014-03-12 Storage temp -55...+150°C Datasheet 16 V2.4 2014-03-12 Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.     Publishedby InfineonTechnologiesAG 81726München,Germany ©InfineonTechnologiesAG2018. AllRightsReserved. ImportantNotice Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”).Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/orany informationregardingtheapplicationoftheproduct,InfineonTechnologiesherebydisclaimsanyandallwarrantiesand liabilitiesofanykind,includingwithoutlimitationwarrantiesofnon-infringementofintellectualpropertyrightsofanythird party. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseof theproductofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityof customer’stechnicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthe completenessoftheproductinformationgiveninthisdocumentwithrespecttosuchapplication. 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