IKD15N60RF

IGBT IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage IKD15N60RF TRENCHSTOPTMRC-Seriesforhardswitchingapplicationsupto30kHz Datasheet IndustrialPowerControl IKD15N60RF TRENCHSTOPTMRC-DrivesFastSeries IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage  Features: C TRENCHSTOPTMReverseConducting(RC)technologyfor600V applicationsoffering •OptimizedEon,EoffandQrrforlowswitchinglosses •Operatingrangeof4to30kHz •SmoothswitchingperformanceleadingtolowEMIlevels •Verytightparameterdistribution •Maximumjunctiontemperature175°C •Shortcircuitcapabilityof5µs •Bestinclasscurrentversuspackagesizeperformance •QualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant(soldertemperature 260°C,MSL1) G E C CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ G Applications: E Domesticandindustrialdrives: •Compressors •Pumps •Fans KeyPerformanceandPackageParameters Type IKD15N60RF Datasheet www.infineon.com VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package 600V 15A 2.2V 175°C K15R60F PG-TO252-3 PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2.3 2014-03-12 IKD15N60RF TRENCHSTOPTMRC-DrivesFastSeries TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 Datasheet 3 V2.3 2014-03-12 IKD15N60RF TRENCHSTOPTMRC-DrivesFastSeries MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Collector-emittervoltage,Tvj≥25°C VCE 600 V DCcollectorcurrent,limitedbyTvjmax Tc=25°C Tc=100°C IC 30.0 15.0 A Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 45.0 A Turn off safe operating area VCE≤600V,Tvj≤175°C,tp=1µs - 35.0 A Diodeforwardcurrent,limitedbyTvjmax Tc=25°C Tc=100°C IF 30.0 15.0 A Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 45.0 A Gate-emitter voltage VGE ±20 V Short circuit withstand time VGE=15.0V,VCC≤400V Allowed number of short circuits < 1000 Time between short circuits: ≥ 1.0s Tvj=150°C tSC PowerdissipationTc=25°C Ptot 250.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C µs 5 Soldering temperature, reflow soldering (MSL1 according to JEDEC J-STA-020) °C 260 ThermalResistance Parameter Symbol Conditions Value min. typ. max. Unit RthCharacteristics IGBT thermal resistance,1) junction - case Rth(j-c) - - 0.60 K/W Diode thermal resistance,2) junction - case Rth(j-c) - - 2.00 K/W Thermal resistance, min. footprint junction - ambient Rth(j-a) - - 75 K/W Thermal resistance, 6cm² Cu on PCB junction - ambient Rth(j-a) - - 50 K/W 1) 2) Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the IGBT, is not possible using a thermocouple. Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the Diode, is not possible using a thermocouple. Datasheet 4 V2.3 2014-03-12 IKD15N60RF TRENCHSTOPTMRC-DrivesFastSeries ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. 600 - - V VGE=15.0V,IC=15.0A Tvj=25°C Tvj=175°C - 2.20 2.30 2.50 - V - 2.10 2.00 2.40 - V 4.3 5.0 5.7 V VCE=600V,VGE=0V Tvj=25°C Tvj=175°C - - 40 1000 µA StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA Collector-emitter saturation voltage VCEsat Diode forward voltage VF VGE=0V,IF=15.0A Tvj=25°C Tvj=175°C Gate-emitter threshold voltage VGE(th) IC=0.25mA,VCE=VGE Zero gate voltage collector current1) ICES Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=15.0A - 6.6 - S Integrated gate resistor rG Ω none ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. - 961 - - 53 - - 33 - - 90.0 - nC - 7.0 - nH - A DynamicCharacteristic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG Internal emitter inductance measured 5mm (0.197 in.) from case LE Short circuit collector current Max. 1000 short circuits IC(SC) Time between short circuits: ≥ 1.0s VCE=25V,VGE=0V,f=1MHz VCC=480V,IC=15.0A, VGE=15V VGE=15.0V,VCC≤400V, tSC≤5µs Tvj=25°C - 112 pF SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 13 - ns - 15 - ns - 160 - ns - 17 - ns - 0.27 - mJ IGBTCharacteristic,atTvj=25°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff - 0.25 - mJ Total switching energy Ets - 0.52 - mJ 1) Tvj=25°C, VCC=400V,IC=15.0A, VGE=0.0/15.0V, RG(on)=15.0Ω,RG(off)=15.0Ω, Lσ=50nH,Cσ=34pF Lσ,CσfromFig.E Not subject to production test - verified by design/characterization Datasheet 5 V2.3 2014-03-12 IKD15N60RF TRENCHSTOPTMRC-DrivesFastSeries DiodeCharacteristic,atTvj=25°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Tvj=25°C, VR=400V, IF=15.0A, diF/dt=1030A/µs dirr/dt - 74 - ns - 0.42 - µC - 13.2 - A - -211 - A/µs SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 13 - ns - 17 - ns - 173 - ns - 20 - ns - 0.45 - mJ IGBTCharacteristic,atTvj=175°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff - 0.33 - mJ Total switching energy Ets - 0.78 - mJ - 142 - ns - 1.00 - µC - 16.6 - A - -133 - A/µs Tvj=175°C, VCC=400V,IC=15.0A, VGE=0.0/15.0V, RG(on)=15.0Ω,RG(off)=15.0Ω, Lσ=50nH,Cσ=34pF Lσ,CσfromFig.E DiodeCharacteristic,atTvj=175°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Datasheet Tvj=175°C, VR=400V, IF=15.0A, diF/dt=880A/µs dirr/dt 6 V2.3 2014-03-12 IKD15N60RF TRENCHSTOPTMRC-DrivesFastSeries 10 9 10 IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 8 7 6 5 4 3 tp=10µs 20µs 50µs 100µs 1 200µs 500µs DC 2 1 0 0.1 1 10 0.1 100 1 f,SWITCHINGFREQUENCY[kHz] 10 100 1000 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 1. Collectorcurrentasafunctionofswitching frequency (Tvj≤175°C,Ta=55°C,D=0.5,VCE=400V, VGE=15/0V,rG=15Ω,PCBmountingwith thermal vias and heatsink, see Appnote: www.infineon.com/igbt) Figure 2. Forwardbiassafeoperatingarea (D=0,TC=25°C,Tvj≤175°C;VGE=15V) 250 30 225 25 IC,COLLECTORCURRENT[A] Ptot,POWERDISSIPATION[W] 200 175 150 125 100 75 20 15 10 50 5 25 0 25 50 75 100 125 150 0 175 TC,CASETEMPERATURE[°C] Figure 3. Powerdissipationasafunctionofcase temperature (Tvj≤175°C) Datasheet 0 25 50 75 100 125 150 175 TC,CASETEMPERATURE[°C] Figure 4. Collectorcurrentasafunctionofcase temperature (VGE≥15V,Tvj≤175°C) 7 V2.3 2014-03-12 IKD15N60RF TRENCHSTOPTMRC-DrivesFastSeries 45 45 VGE=20V 40 15V 35 IC,COLLECTORCURRENT[A] 35 IC,COLLECTORCURRENT[A] 40 17V 13V 30 11V 9V 25 7V 20 15 17V 30 20 5 2 3 9V 7V 15 5 1 13V 11V 10 0 15V 25 10 0 VGE=20V 0 4 0 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 5. Typicaloutputcharacteristic (Tvj=25°C) 3 4 4.0 Tj=25°C Tj=175°C 35 30 25 20 15 10 5 4 6 8 10 12 3.0 2.5 2.0 1.5 1.0 0.5 0.0 14 VGE,GATE-EMITTERVOLTAGE[V] Figure 7. Typicaltransfercharacteristic (VCE=10V) Datasheet IC=1A IC=5A IC=15A IC=30A 3.5 VCEsat,COLLECTOR-EMITTERSATURATION[V] 40 IC,COLLECTORCURRENT[A] 2 Figure 6. Typicaloutputcharacteristic (Tvj=175°C) 45 0 1 VCE,COLLECTOR-EMITTERVOLTAGE[V] 0 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 8. Typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature (VGE=15V) 8 V2.3 2014-03-12 IKD15N60RF TRENCHSTOPTMRC-DrivesFastSeries 1000 td(off) tf td(on) tr td(off) tf td(on) tr t,SWITCHINGTIMES[ns] t,SWITCHINGTIMES[ns] 100 10 1 100 10 1 7.5 10.0 12.5 15.0 17.5 20.0 22.5 25.0 27.5 30.0 5 10 15 IC,COLLECTORCURRENT[A] 20 25 30 35 40 45 50 rG,GATERESISTOR[Ω] Figure 9. Typicalswitchingtimesasafunctionof collectorcurrent (inductiveload,Tvj=175°C,VCE=400V, VGE=15/0V,rG=15Ω,Dynamictestcircuitin Figure E) Figure 10. Typicalswitchingtimesasafunctionofgate resistor (inductiveload,Tvj=175°C,VCE=400V, VGE=15/0V,IC=15A,Dynamictestcircuitin Figure E) 7 100 10 25 50 typ. min. max. VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V] t,SWITCHINGTIMES[ns] td(off) tf td(on) tr 75 100 125 150 6 5 4 3 2 1 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 11. Typicalswitchingtimesasafunctionof junctiontemperature (inductiveload,VCE=400V,VGE=15/0V, IC=15A,rG=15Ω,Dynamictestcircuitin Figure E) Datasheet 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 12. Gate-emitterthresholdvoltageasafunction ofjunctiontemperature (IC=0,25mA) 9 V2.3 2014-03-12 IKD15N60RF TRENCHSTOPTMRC-DrivesFastSeries 2.0 1.4 Eoff Eon Ets 1.2 E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] Eoff Eon Ets 1.5 1.0 0.5 1.0 0.8 0.6 0.4 0.2 0.0 0.0 7.5 10.0 12.5 15.0 17.5 20.0 22.5 25.0 27.5 30.0 5 10 15 IC,COLLECTORCURRENT[A] Figure 13. Typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload,Tvj=175°C,VCE=400V, VGE=15/0V,rG=15Ω,Dynamictestcircuitin Figure E) 25 30 35 40 45 50 Figure 14. Typicalswitchingenergylossesasa functionofgateresistor (inductiveload,Tvj=175°C,VCE=400V, VGE=15/0V,IC=15A,Dynamictestcircuitin Figure E) 0.9 1.0 Eoff Eon Ets Eoff Eon Ets E,SWITCHINGENERGYLOSSES[mJ] 0.8 E,SWITCHINGENERGYLOSSES[mJ] 20 rG,GATERESISTOR[Ω] 0.7 0.6 0.5 0.4 0.3 0.8 0.6 0.4 0.2 0.2 0.1 25 50 75 100 125 150 0.0 200 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 15. Typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload,VCE=400V,VGE=15/0V, IC=15A,rG=15Ω,Dynamictestcircuitin Figure E) Datasheet 250 300 350 400 450 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 16. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload,Tvj=175°C,VGE=15/0V, IC=15A,rG=15Ω,Dynamictestcircuitin Figure E) 10 V2.3 2014-03-12 IKD15N60RF TRENCHSTOPTMRC-DrivesFastSeries 16 120V 480V 1000 Cies Coes Cres 12 C,CAPACITANCE[pF] VGE,GATE-EMITTERVOLTAGE[V] 14 10 8 6 100 4 2 0 0 20 40 60 80 10 100 0 QGE,GATECHARGE[nC] Figure 17. Typicalgatecharge (IC=15A) 10 15 20 25 30 Figure 18. Typicalcapacitanceasafunctionof collector-emittervoltage (VGE=0V,f=1MHz) 200 12 180 tSC,SHORTCIRCUITWITHSTANDTIME[µs] IC(SC),SHORTCIRCUITCOLLECTORCURRENT[A] 5 VCE,COLLECTOR-EMITTERVOLTAGE[V] 160 140 120 100 80 60 40 10 8 6 4 2 20 0 12 13 14 15 16 17 18 19 0 20 VGE,GATE-EMITTERVOLTAGE[V] Figure 19. Typicalshortcircuitcollectorcurrentasa functionofgate-emittervoltage (VCE≤400V,startatTvj=25°C) Datasheet 10 11 12 13 14 15 16 17 18 19 VGE,GATE-EMITTERVOLTAGE[V] Figure 20. Shortcircuitwithstandtimeasafunctionof gate-emittervoltage (VCE≤400V,startatTvj=150°C) 11 V2.3 2014-03-12 IKD15N60RF TRENCHSTOPTMRC-DrivesFastSeries Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W] Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W] 1 D=0.5 0.2 0.1 0.1 0.05 0.02 0.01 single pulse 0.01 1 D=0.5 0.2 0.1 0.05 0.02 0.01 single pulse 0.1 i: 1 2 3 4 ri[K/W]: 0.0478 0.3033 0.2438 0.0281 τi[s]: 9.8E-5 4.4E-4 2.0E-3 0.03723 0.001 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 i: 1 2 3 4 ri[K/W]: 0.393 1.0808 0.4767 0.0568 τi[s]: 1.2E-4 3.4E-4 1.9E-3 0.02678 0.01 1E-7 1 1E-6 tp,PULSEWIDTH[s] Figure 21. IGBTtransientthermalimpedanceasa functionofpulsewidth1)(seepage4) (D=tp/T) 1E-4 0.001 0.01 0.1 1 tp,PULSEWIDTH[s] Figure 22. Diodetransientthermalimpedanceasa functionofpulsewidth2)(seepage4) (D=tp/T) 200 1.2 Tj=25°C, IF = 15A Tj=175°C, IF = 15A Tj=25°C, IF = 15A Tj=175°C, IF = 15A Qrr,REVERSERECOVERYCHARGE[µC] 180 trr,REVERSERECOVERYTIME[ns] 1E-5 160 140 120 100 80 60 40 1.0 0.8 0.6 0.4 0.2 20 0 700 800 900 0.0 700 1000 1100 1200 1300 1400 1500 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 23. Typicalreverserecoverytimeasafunction ofdiodecurrentslope (VR=400V) Datasheet 800 900 1000 1100 1200 1300 1400 1500 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 24. Typicalreverserecoverychargeasa functionofdiodecurrentslope (VR=400V) 12 V2.3 2014-03-12 IKD15N60RF TRENCHSTOPTMRC-DrivesFastSeries 25.0 0 Tj=25°C, IF = 15A Tj=175°C, IF = 15A Tj=25°C, IF = 15A Tj=175°C, IF = 15A -50 20.0 dIrr/dt,diodepeakrateoffallofIrr[A/µs] Irr,REVERSERECOVERYCURRENT[A] 22.5 17.5 15.0 12.5 10.0 7.5 5.0 -100 -150 -200 -250 -300 -350 2.5 0.0 700 800 900 -400 700 1000 1100 1200 1300 1400 1500 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 25. Typicalreverserecoverycurrentasa functionofdiodecurrentslope (VR=400V) 900 1000 1100 1200 1300 1400 1500 Figure 26. Typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope (VR=400V) 45 3.0 Tj=25°C, VGE=0V IF=1A IF=5A IF=15A IF=30A Tj=175°C, VGE=0V 40 2.5 VF,FORWARDVOLTAGE[V] 35 IF,FORWARDCURRENT[A] 800 diF/dt,DIODECURRENTSLOPE[A/µs] 30 25 20 15 10 2.0 1.5 1.0 5 0 0 1 2 3 0.5 4 VF,FORWARDVOLTAGE[V] Figure 27. Typicaldiodeforwardcurrentasafunction offorwardvoltage Datasheet 0 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 28. Typicaldiodeforwardvoltageasafunction ofjunctiontemperature 13 V2.3 2014-03-12 IKD15N60RF TRENCHSTOPTMRC-DrivesFastSeries Package Drawing PG-TO252-3 A A1 b b2 b3 c c2 D D1 E E1 e e1 N H L L3 L4 Datasheet DOCUMENT NO. Z8B00003328 MILLIMETERS DIM MIN 2.16 0.00 0.64 0.65 4,95 0.46 0.40 5.97 5.02 6.35 4.32 MAX 2.41 0.15 0.89 1.15 5.50 0.61 0.98 6.22 5.84 6.73 5.21 2.29 (BSC) 4.57 (BSC) SCALE 2.5 0 2.5 5mm EUROPEAN PROJECTION 3 9.40 1.18 0.89 0.51 0 ISSUE DATE 05-02-2016 10.48 1.78 1.27 1.02 REVISION 06 14 V2.3 2014-03-12 IKD15N60RF TRENCHSTOPTMRC-DrivesFastSeries Testing Conditions VGE(t) I,V 90% VGE t rr = t a + t b Q rr = Q a + Q b dIF/dt a 10% VGE b t Qa IC(t) Qb dI 90% IC 90% IC 10% IC 10% IC Figure C. Definition of diode switching characteristics t VCE(t) t td(off) tf td(on) t tr Figure A. VGE(t) 90% VGE Figure D. 10% VGE t IC(t) CC 2% IC t Figure E. Dynamic test circuit Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor Cr, (only for ZVT switching) VCE(t) t2 E off = t4 VCE x IC x dt E t1 t1 on = VCE x IC x d t 2% VCE t3 t2 t3 t4 t Figure B. Datasheet 15 V2.3 2014-03-12 IKD15N60RF TRENCHSTOPTMRC-DrivesFastSeries RevisionHistory IKD15N60RF Revision:2014-03-12,Rev.2.3 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2012-02-24 Final data sheet 2.2 2014-02-26 Without PB free logo 2.3 2014-03-12 Storage temp -55...+150°C Datasheet 16 V2.3 2014-03-12 Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.     Publishedby InfineonTechnologiesAG 81726München,Germany ©InfineonTechnologiesAG2018. AllRightsReserved. ImportantNotice Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”).Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/orany informationregardingtheapplicationoftheproduct,InfineonTechnologiesherebydisclaimsanyandallwarrantiesand liabilitiesofanykind,includingwithoutlimitationwarrantiesofnon-infringementofintellectualpropertyrightsofanythird party. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseof theproductofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityof customer’stechnicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthe completenessoftheproductinformationgiveninthisdocumentwithrespecttosuchapplication. Forfurtherinformationontheproduct,technology,deliverytermsandconditionsandpricespleasecontactyournearest InfineonTechnologiesoffice(www.infineon.com). PleasenotethatthisproductisnotqualifiedaccordingtotheAECQ100orAECQ101documentsoftheAutomotive ElectronicsCouncil. Warnings Duetotechnicalrequirementsproductsmaycontaindangeroussubstances.Forinformationonthetypesinquestion pleasecontactyournearestInfineonTechnologiesoffice. 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