IKD15N60RFAATMA1

IGBT IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage IKD15N60RFA TRENCHSTOPTMRC-Seriesforhardswitchingapplicationsupto30kHz Datasheet IndustrialPowerControl IKD15N60RFA TRENCHSTOPTMRC-DrivesFastSeries IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage  Features: C TRENCHSTOPTMReverseConducting(RC)technologyfor600V applicationsoffering •OptimizedEon,EoffandQrrforlowswitchinglosses •Operatingrangeof4to30kHz •SmoothswitchingperformanceleadingtolowEMIlevels •Verytightparameterdistribution •Maximumjunctiontemperature175°C •Shortcircuitcapabilityof5µs •Bestinclasscurrentversuspackagesizeperformance •QualifiedaccordingtoAEC-Q101 •Pb-freeleadplating;RoHScompliant(soldertemperature 260°C,MSL1) G E C CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ G E Applications: •Smalldrives •Piezoinjection •Automotivelighting/HID KeyPerformanceandPackageParameters Type IKD15N60RFA VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package 600V 15A 2.2V 175°C K15DRFA PG-TO252-3 2 Rev.2.1,2014-12-15 IKD15N60RFA TRENCHSTOPTMRC-DrivesFastSeries TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 3 Rev.2.1,2014-12-15 IKD15N60RFA TRENCHSTOPTMRC-DrivesFastSeries MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Collector-emittervoltage,Tvj≥25°C VCE 600 V DCcollectorcurrent,limitedbyTvjmax TC=25°C TC=100°C IC 30.0 15.0 A Pulsedcollectorcurrent,tplimitedbyTvjmax1) ICpuls 45.0 A Turn off safe operating area VCE≤600V,Tvj≤175°C,tp=1µs2) - 45.0 A Diodeforwardcurrent,limitedbyTvjmax TC=25°C TC=100°C IF 30.0 15.0 A Diodepulsedcurrent,tplimitedbyTvjmax1) IFpuls 45.0 A Gate-emitter voltage VGE ±20 V Short circuit withstand time VGE=15.0V,VCC≤400V Allowed number of short circuits < 1000 Time between short circuits: ≥ 1.0s Tvj=150°C tSC PowerdissipationTC=25°C Ptot 240.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C µs 5 Soldering temperature, reflow soldering (MSL1 according to JEDEC J-STA-020) °C 260 ThermalResistance Parameter Characteristic Symbol Conditions Max.Value Unit IGBT thermal resistance,3) junction - case Rth(j-c) 0.62 K/W Diode thermal resistance,4) junction - case Rth(j-c) 2.00 K/W Thermal resistance, min. footprint junction - ambient Rth(j-a) 75 K/W Thermal resistance, 6cm² Cu on PCB junction - ambient Rth(j-a) 50 K/W 1) Definedbydesign.Notsubjecttoproductiontest.ICpulsmaxlimitedbybondwirefortpmax=20ms. Defined by design. Not subject to production test. Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the IGBT, is not possible using a thermocouple. 4) Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the Diode, is not possible using a thermocouple. 2) 3) 4 Rev.2.1,2014-12-15 IKD15N60RFA TRENCHSTOPTMRC-DrivesFastSeries ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. 600 - - V VGE=15.0V,IC=15.0A Tvj=25°C Tvj=175°C - 2.20 2.30 2.50 - V - 2.10 2.00 2.40 - V 4.3 5.0 5.7 V StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA Collector-emitter saturation voltage VCEsat Diode forward voltage VF VGE=0V,IF=15.0A Tvj=25°C Tvj=175°C Gate-emitter threshold voltage VGE(th) IC=0.25mA,VCE=VGE Zero gate voltage collector current ICES VCE=600V,VGE=0V Tvj=25°C Tvj=175°C - 650.0 40.0 - µA Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=10V,IC=15.0A - 6.6 - S Integrated gate resistor rG 1) Ω none ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. - 961 - - 53 - - 33 - - 90.0 - nC - 7.0 - nH - A DynamicCharacteristic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG Internal emitter inductance measured 5mm (0.197 in.) from case LE Short circuit collector current Max. 1000 short circuits IC(SC) Time between short circuits: ≥ 1.0s 1) VCE=25V,VGE=0V,f=1MHz VCC=480V,IC=15.0A, VGE=15V VGE=15.0V,VCC≤400V, tSC≤5µs Tvj=25°C - 112 pF TypicalvalueoftransconductancedeterminedatTvj=175°C. 5 Rev.2.1,2014-12-15 IKD15N60RFA TRENCHSTOPTMRC-DrivesFastSeries SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 13 - ns - 15 - ns - 160 - ns - 17 - ns - 0.27 - mJ IGBTCharacteristic,atTvj=25°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff - 0.25 - mJ Total switching energy Ets - 0.52 - mJ - 74 - ns - 0.42 - µC - 13.2 - A - -211 - A/µs Tvj=25°C, VCC=400V,IC=15.0A, VGE=0.0/15.0V, RG(on)=15.0Ω,RG(off)=15.0Ω, Lσ=50nH,Cσ=34pF Lσ,CσfromFig.E DiodeCharacteristic,atTvj=25°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Tvj=25°C, VR=400V, IF=15.0A, diF/dt=1030A/µs dirr/dt SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 13 - ns - 17 - ns - 173 - ns - 20 - ns - 0.45 - mJ IGBTCharacteristic,atTvj=175°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff - 0.33 - mJ Total switching energy Ets - 0.78 - mJ - 142 - ns - 1.00 - µC - 16.6 - A - -133 - A/µs Tvj=175°C, VCC=400V,IC=15.0A, VGE=0.0/15.0V, RG(on)=15.0Ω,RG(off)=15.0Ω, Lσ=50nH,Cσ=34pF Lσ,CσfromFig.E DiodeCharacteristic,atTvj=175°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Tvj=175°C, VR=400V, IF=15.0A, diF/dt=880A/µs dirr/dt 6 Rev.2.1,2014-12-15 IKD15N60RFA TRENCHSTOPTMRC-DrivesFastSeries 10 9 IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 8 7 6 5 4 3 10 not for linear use 1 2 1 0 0.1 1 10 0.1 100 1 f,SWITCHINGFREQUENCY[kHz] 10 100 1000 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 1. Collectorcurrentasafunctionofswitching frequency (Tvj≤175°C,Ta=55°C,D=0.5,VCE=400V, VGE=0/15V,rG=15Ω,PCBmountingwith thermal vias and heatsink, see Appnote: www.infineon.com/igbt) Figure 2. Forwardbiassafeoperatingarea (D=0,TC=25°C,Tvj≤175°C,VGE=15V,tp=1µs) 250 30 225 IC,COLLECTORCURRENT[A] Ptot,POWERDISSIPATION[W] 200 175 150 125 100 75 25 20 15 10 50 5 25 0 25 50 75 100 125 150 0 175 TC,CASETEMPERATURE[°C] 0 25 50 75 100 125 150 175 TC,CASETEMPERATURE[°C] Figure 3. Powerdissipationasafunctionofcase temperature (Tvj≤175°C) Figure 4. Collectorcurrentasafunctionofcase temperature (VGE≥15V,Tvj≤175°C) 7 Rev.2.1,2014-12-15 IKD15N60RFA TRENCHSTOPTMRC-DrivesFastSeries 45 45 VGE = 20V 40 15V 35 IC,COLLECTORCURRENT[A] 35 IC,COLLECTORCURRENT[A] 40 17V 13V 30 11V 9V 25 7V 20 15 17V 30 11V 5 2 3 0 4 9V 7V 15 5 1 13V 20 10 0 15V 25 10 0 VGE = 20V 0 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 5. Typicaloutputcharacteristic (Tvj=25°C) 3 4 4.0 Tj = 25°C Tj = 175°C VCEsat,COLLECTOR-EMITTERSATURATION[V] 40 35 IC,COLLECTORCURRENT[A] 2 Figure 6. Typicaloutputcharacteristic (Tvj=175°C) 45 30 25 20 15 10 5 0 1 VCE,COLLECTOR-EMITTERVOLTAGE[V] 4 6 8 10 12 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 14 VGE,GATE-EMITTERVOLTAGE[V] IC = 1A IC = 5A IC = 15A IC = 30A 0 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 7. Typicaltransfercharacteristic (VCE=10V) Figure 8. Typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature (VGE=15V) 8 Rev.2.1,2014-12-15 IKD15N60RFA TRENCHSTOPTMRC-DrivesFastSeries 1000 td(off) tf td(on) tr td(off) tf td(on) tr t,SWITCHINGTIMES[ns] t,SWITCHINGTIMES[ns] 100 10 1 100 10 1 7.5 10.0 12.5 15.0 17.5 20.0 22.5 25.0 27.5 30.0 5 10 15 IC,COLLECTORCURRENT[A] 20 25 30 35 40 45 50 rG,GATERESISTOR[Ω] Figure 9. Typicalswitchingtimesasafunctionof collectorcurrent (inductiveload,Tvj=175°C,VCE=400V, VGE=15/0V,rG=15Ω,Dynamictestcircuitin Figure E) Figure 10. Typicalswitchingtimesasafunctionofgate resistor (inductiveload,Tvj=175°C,VCE=400V, VGE=15/0V,IC=15A,Dynamictestcircuitin Figure E) 7 VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V] t,SWITCHINGTIMES[ns] td(off) tf td(on) tr 100 10 25 50 75 100 125 150 6 5 4 3 2 1 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 11. Typicalswitchingtimesasafunctionof junctiontemperature (inductiveload,VCE=400V,VGE=15/0V, IC=15A,rG=15Ω,Dynamictestcircuitin Figure E) typ. min. max. 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 12. Gate-emitterthresholdvoltageasafunction ofjunctiontemperature (IC=0,25mA) 9 Rev.2.1,2014-12-15 IKD15N60RFA TRENCHSTOPTMRC-DrivesFastSeries 2.0 1.4 Eoff Eon Ets 1.2 E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] Eoff Eon Ets 1.5 1.0 0.5 1.0 0.8 0.6 0.4 0.2 0.0 0.0 7.5 10.0 12.5 15.0 17.5 20.0 22.5 25.0 27.5 30.0 5 10 15 IC,COLLECTORCURRENT[A] Figure 13. Typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload,Tvj=175°C,VCE=400V, VGE=15/0V,rG=15Ω,Dynamictestcircuitin Figure E) 25 30 35 40 45 50 Figure 14. Typicalswitchingenergylossesasa functionofgateresistor (inductiveload,Tvj=175°C,VCE=400V, VGE=15/0V,IC=15A,Dynamictestcircuitin Figure E) 0.9 1.0 Eoff Eon Ets Eoff Eon Ets E,SWITCHINGENERGYLOSSES[mJ] 0.8 E,SWITCHINGENERGYLOSSES[mJ] 20 rG,GATERESISTOR[Ω] 0.7 0.6 0.5 0.4 0.3 0.8 0.6 0.4 0.2 0.2 0.1 25 50 75 100 125 150 0.0 200 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 15. Typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload,VCE=400V,VGE=15/0V, IC=15A,rG=15Ω,Dynamictestcircuitin Figure E) 250 300 350 400 450 VCE,COLLECTOR-EMITTERVOLTAGE[V] 10 Figure 16. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload,Tvj=175°C,VGE=15/0V, IC=15A,rG=15Ω,Dynamictestcircuitin Figure E) Rev.2.1,2014-12-15 IKD15N60RFA TRENCHSTOPTMRC-DrivesFastSeries 16 VCC=120V VCC=480V 1000 Cies Coes Cres 12 C,CAPACITANCE[pF] VGE,GATE-EMITTERVOLTAGE[V] 14 10 8 6 100 4 2 0 0 20 40 60 80 10 100 0 QGE,GATECHARGE[nC] Figure 17. Typicalgatecharge (IC=15A) 10 15 20 25 30 Figure 18. Typicalcapacitanceasafunctionof collector-emittervoltage (VGE=0V,f=1MHz) 200 12 180 tSC,SHORTCIRCUITWITHSTANDTIME[µs] IC(SC),SHORTCIRCUITCOLLECTORCURRENT[A] 5 VCE,COLLECTOR-EMITTERVOLTAGE[V] 160 140 120 100 80 60 40 10 8 6 4 2 20 0 12 13 14 15 16 17 18 19 0 20 VGE,GATE-EMITTERVOLTAGE[V] 10 11 12 13 14 15 16 17 18 19 VGE,GATE-EMITTERVOLTAGE[V] Figure 19. Typicalshortcircuitcollectorcurrentasa functionofgate-emittervoltage (VCE≤400V,startatTvj=25°C) Figure 20. Shortcircuitwithstandtimeasafunctionof gate-emittervoltage (VCE≤400V,startatTvj=150°C) 11 Rev.2.1,2014-12-15 IKD15N60RFA TRENCHSTOPTMRC-DrivesFastSeries Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W] Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W] 1 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 single pulse 0.01 i: 1 2 3 4 ri[K/W]: 0.0478 0.3033 0.2438 0.0281 τi[s]: 9.7E-5 4.4E-4 2.0E-3 0.03723 0.001 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.1 i: 1 2 3 4 ri[K/W]: 0.393 1.0808 0.4767 0.0568 τi[s]: 1.2E-4 3.4E-4 1.9E-3 0.02678 0.01 1E-7 1 single pulse 1E-6 tp,PULSEWIDTH[s] 1E-4 0.001 0.01 0.1 1 tp,PULSEWIDTH[s] Figure 21. IGBTtransientthermalimpedanceasa functionofpulsewidth(seepage43)) (D=tp/T) Figure 22. Diodetransientthermalimpedanceasa functionofpulsewidth(seepage44)) (D=tp/T) 200 1.2 Tj = 25°C, IF = 15A Tj = 175°C, IF = 15A Tj = 25°C, IF = 15A Tj = 175°C, IF = 15A Qrr,REVERSERECOVERYCHARGE[µC] 180 trr,REVERSERECOVERYTIME[ns] 1E-5 160 140 120 100 80 60 40 1.0 0.8 0.6 0.4 0.2 20 0 700 800 900 1000 1100 1200 1300 1400 1500 diF/dt,DIODECURRENTSLOPE[A/µs] 0.0 700 800 900 1000 1100 1200 1300 1400 1500 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 23. Typicalreverserecoverytimeasafunction ofdiodecurrentslope (VR=400V) 12 Figure 24. Typicalreverserecoverychargeasa functionofdiodecurrentslope (VR=400V) Rev.2.1,2014-12-15 IKD15N60RFA TRENCHSTOPTMRC-DrivesFastSeries 25.0 0 Tj = 25°C, IF = 15A Tj = 175°C, IF = 15A Tj = 25°C, IF = 15A Tj = 175°C, IF = 15A -50 20.0 dIrr/dt,diodepeakrateoffallofIrr[A/µs] Irr,REVERSERECOVERYCURRENT[A] 22.5 17.5 15.0 12.5 10.0 7.5 5.0 -100 -150 -200 -250 -300 -350 2.5 0.0 700 800 900 -400 700 1000 1100 1200 1300 1400 1500 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 25. Typicalreverserecoverycurrentasa functionofdiodecurrentslope (VR=400V) 900 1000 1100 1200 1300 1400 1500 Figure 26. Typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope (VR=400V) 45 3.0 Tj = 25°C, VGE = 0V IF = 1A IF = 5A IF = 15A IF = 30A Tj = 175°C, VGE = 0V 40 2.5 VF,FORWARDVOLTAGE[V] 35 IF,FORWARDCURRENT[A] 800 diF/dt,DIODECURRENTSLOPE[A/µs] 30 25 20 15 10 2.0 1.5 1.0 5 0 0 1 2 3 0.5 4 VF,FORWARDVOLTAGE[V] 0 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 27. Typicaldiodeforwardcurrentasafunction offorwardvoltage 13 Figure 28. Typicaldiodeforwardvoltageasafunction ofjunctiontemperature Rev.2.1,2014-12-15 IKD15N60RFA TRENCHSTOPTMRC-DrivesFastSeries PG - TO252 - 3 14 Rev.2.1,2014-12-15 IKD15N60RFA TRENCHSTOPTMRC-DrivesFastSeries VGE(t) I,V 90% VGE t rr = t a + t b Q rr = Q a + Q b dIF/dt a 10% VGE b t Qa IC(t) Qb dI 90% IC 90% IC 10% IC 10% IC Figure C. Definition of diode switching characteristics t VCE(t) t td(off) tf td(on) t tr Figure A. VGE(t) 90% VGE Figure D. 10% VGE t IC(t) CC 2% IC t Figure E. Dynamic test circuit Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor Cr, (only for ZVT switching) VCE(t) t2 E off = t4 VCE x IC x dt E t1 t1 on = VCE x IC x d t 2% VCE t3 t2 t3 t4 t Figure B. 15 Rev.2.1,2014-12-15 IKD15N60RFA TRENCHSTOPTM RC-Drives Fast Series Revision History IKD15N60RFA Revision: 2014-12-15, Rev. 2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2014-12-15 Final data sheet We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Published by Infineon Technologies AG 81726 Munich, Germany 81726 München, Germany © 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 16 Rev. 2.1, 2014-12-15