IKN01N60RC2ATMA1

IKN01N60RC2 600 V Reverse Conducting Drive 2 600 V Reverse Conducting Drive 2 offering cost effective IGBT with monolithically integrated diode Features • • • • • • • • • VCE = 600 V IC = 1 A Very tight parameter distribution Operating range of 1 to 20 kHz Maximum junction temperature 150°C Short circuit capability of 3 µs Humidity robust design Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models: http://www.infineon.com/rc-d2 2021-10-27 restricted Copyright © Infineon Technologies AG 202 Potential applications • • • • • • • Ceiling fan Countertop appliances - mixing Kitchen hood Refrigerators Residential aircon indoor unit Washing machines General purpose drives (GPD) Product validation • Qualified for industrial applications according to the relevant tests of JEDEC47/20/22 Description C G E Type Package Marking IKN01N60RC2 PG-SOT223-3 K1DRC2 Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.10 2022-09-21 IKN01N60RC2 600 V Reverse Conducting Drive 2 Table of contents Table of contents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 IGBT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 3 Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 4 Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 6 Testing conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Datasheet 2 Revision 1.10 2022-09-21 IKN01N60RC2 600 V Reverse Conducting Drive 2 1 Package 1 Package Table 1 Characteristic values Parameter Symbol Note or test condition Values Min. Storage temperature Tstg Soldering temperature Tsold Thermal resistance, min.footprint junctionambient Typ. Max. 150 °C 260 °C Rth(j-a) 160 K/W Thermal resistance, 6 cm2 Cu on PCB junction to ambient Rth(j-a) 75 K/W IGBT thermal resistance, junction-case1) Rth(j-c) 24.4 K/W Diode thermal resistance, junction-case1) Rth(j-c) 43.5 K/W 1) -55 Unit wave soldering / reflow soldering (MSL1 according to JEDEC J-STA-020) Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the diode, is not possible using a thermocouple. 2 IGBT Table 2 Maximum rated values Parameter Collector-emitter voltage DC collector current, limited by Tvjmax 1) Pulsed collector current, tp limited by Tvjmax Symbol Note or test condition VCE Values Unit 600 V Tc = 25 °C 2.2 A Tc = 100 °C 1.3 Tvj ≥ 25 °C IC ICpulse Turn-off safe operating area 3 A 3 A ±20 V ±30 V 3 µs Tc = 25 °C 5.1 W Tc = 100 °C 2 VCE ≤ 600 V, tp = 1 µs, Tvj ≤ 150 °C Gate-emitter voltage VGE Transient gate-emitter voltage VGE tp ≤ 10 µs, D < 0.01 Short-circuit withstand time tSC VCC ≤ 400 V, VGE = 15 V, Allowed number of short circuits < 1000, Time between short circuits ≥ 1.0 s, Tvj = 150 °C Power dissipation Ptot 1) DPAK equivalent Datasheet 3 Revision 1.10 2022-09-21 IKN01N60RC2 600 V Reverse Conducting Drive 2 2 IGBT Table 3 Characteristic values Parameter Symbol Note or test condition Values Min. Typ. Max. Tvj = 25 °C 2 2.3 V Tvj = 150 °C 2.3 5.7 V Tvj = 25 °C 25 µA Tvj = 150 °C 2500 Collector-emitter saturation voltage VCEsat Gate-emitter threshold voltage VGEth IC = 10 µA, VCE = VGE Zero gate-voltage collector current ICES VCE = 600 V, VGE=0 V Gate-emitter leakage current IGES VCE = 0 V, VGE = 20 V Transconductance gfs IC = 1 A, VCE = 20 V 0.5 S Input capacitance Cies VCE = 25 V, VGE=0 V, f = 1000 kHz 55 pF Output capacitance Coes VCE = 25 V, VGE=0 V, f = 1000 kHz 4 pF Reverse transfer capacitance Cres VCE = 25 V, VGE=0 V, f = 1000 kHz 2.5 pF Gate charge QG IC = 1 A, VCC = 480 V, VGE = 15 V 9 nC VCC = 400 V, VGE = 0/15 V, Tvj = 25 °C, IC = 1 A RGon = 49 Ω, RGoff = 49 Ω, Tvj = 150 °C, Lσ = 30 nH, Cσ = 32 pF IC = 1 A 5.6 ns VCC = 400 V, VGE = 0/15 V, Tvj = 25 °C, IC = 1 A RGon = 49 Ω, RGoff = 49 Ω, Tvj = 150 °C, Lσ = 30 nH, Cσ = 32 pF IC = 1 A 4 VCC = 400 V, VGE = 0/15 V, Tvj = 25 °C, IC = 1 A RGon = 49 Ω, RGoff = 49 Ω, Tvj = 150 °C, Lσ = 30 nH, Cσ = 32 pF IC = 1 A 80 Turn-on delay time Rise time (inductive load) Turn-off delay time Fall time (inductive load) Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets IC = 1 A, VGE = 15 V Unit 4.3 5 100 nA 6 ns 4 ns 100 VCC = 400 V, VGE = 0/15 V, Tvj = 25 °C, IC = 1 A RGon = 49 Ω, RGoff = 49 Ω, Tvj = 150 °C, Lσ = 30 nH, Cσ = 32 pF IC = 1 A 10 VCC = 400 V, VGE = 0/15 V, Tvj = 25 °C, IC = 1 A RGon = 49 Ω, RGoff = 49 Ω, Tvj = 150 °C, Lσ = 30 nH, Cσ = 32 pF IC = 1 A 25.1 VCC = 400 V, VGE = 0/15 V, Tvj = 25 °C, IC = 1 A RGon = 49 Ω, RGoff = 49 Ω, Tvj = 150 °C, Lσ = 30 nH, Cσ = 32 pF IC = 1 A 13.5 VCC = 400 V, VGE = 0/15 V, Tvj = 25 °C, IC = 1 A RGon = 49 Ω, RGoff = 49 Ω, Tvj = 150 °C, Lσ = 30 nH, Cσ = 32 pF IC = 1 A 38.7 ns 10 µJ 34.3 µJ 22.7 µJ 57 (table continues...) Datasheet 4 Revision 1.10 2022-09-21 IKN01N60RC2 600 V Reverse Conducting Drive 2 3 Diode Table 3 (continued) Characteristic values Parameter Symbol Note or test condition Values Min. Operating junction temperature Note: Tvj -40 Max. 150 °C Electrical Characteristic, at Tvj = 25°C, unless otherwise specified 3 Diode Table 4 Maximum rated values Parameter Symbol Note or test condition Repetitive peak reverse voltage VRRM Diode forward current, limited by Tvjmax 1) IF Diode pulsed current, tp limited by Tvjmax IFpulse 1) Typ. Unit Values Unit 600 V Tc = 25 °C 2 A Tc = 100 °C 1 Tvj ≥ 25 °C 3 A Values Unit DPAK equivalent Table 5 Characteristic values Parameter Symbol Note or test condition Min. Diode forward voltage Diode reverse recovery time Diode reverse recovery charge Diode peak reverse recovery current VF trr Qrr Irrm IF = 1 A VR = 400 V VR = 400 V VR = 400 V Typ. Max. Tvj = 25 °C 1.85 2.2 Tvj = 150 °C 1.9 Tvj = 25 °C, IF = 1 A, -diF/dt = 272 A/µs 59.5 Tvj = 150 °C, IF = 1 A, -diF/dt = 236 A/µs 89.3 Tvj = 25 °C, IF = 1 A, -diF/dt = 272 A/µs 0.06 Tvj = 150 °C, IF = 1 A, -diF/dt = 236 A/µs 0.11 Tvj = 25 °C, IF = 1 A, -diF/dt = 272 A/µs 1.9 Tvj = 150 °C, IF = 1 A, -diF/dt = 236 A/µs 2.4 V ns µC A (table continues...) Datasheet 5 Revision 1.10 2022-09-21 IKN01N60RC2 600 V Reverse Conducting Drive 2 3 Diode Table 5 (continued) Characteristic values Parameter Symbol Note or test condition Values Min. Diode peak rate of fall of reverse recovery current Operating junction temperature Note: Datasheet dirr/dt VR = 400 V Tvj Typ. Tvj = 25 °C, IF = 1 A, -diF/dt = 272 A/µs 38.7 Tvj = 150 °C, IF = 1 A, -diF/dt = 236 A/µs 30.9 -40 Unit Max. A/µs 150 °C For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of the maximum ratings stated in this datasheet. 6 Revision 1.10 2022-09-21 IKN01N60RC2 600 V Reverse Conducting Drive 2 4 Characteristics diagrams 4 Characteristics diagrams Power dissipation as a function of heatsink temperature Ptot = f(Tc) Tvj ≤ 150 °C Collector current as a function of heatsink temperature IC = f(Tc) Tvj ≤ 150 °C, VGE ≥ 15 V 6 2.5 5 2.0 4 1.5 3 1.0 2 0.5 1 0 0.0 25 50 75 100 125 150 25 Typical output characteristic IC = f(VCE) Tvj = 25 °C 75 100 125 150 3 4 5 Typical output characteristic IC = f(VCE) Tvj = 150 °C 3.0 3.0 2.5 2.5 2.0 2.0 1.5 1.5 1.0 1.0 0.5 0.5 0.0 0.0 0 Datasheet 50 1 2 3 4 5 0 7 1 2 Revision 1.10 2022-09-21 IKN01N60RC2 600 V Reverse Conducting Drive 2 4 Characteristics diagrams Typical transfer characteristic IC = f(VGE) VCE = 20 V Typical collector-emitter saturation voltage as a function of junction temperature VCEsat = f(Tvj) VGE = 15 V 4.0 3.0 3.5 2.5 3.0 2.0 2.5 2.0 1.5 1.5 1.0 1.0 0.5 0.5 0.0 0.0 2 4 6 8 10 12 25 14 Gate-emitter threshold voltage as a function of junction temperature VGEth = f(Tvj) IC = 10 µA 50 75 100 125 150 Typical switching times as a function of collector current t = f(IC) VCC = 400 V, Tvj = 150 °C, VGE = 0/15 V, RG = 49 Ω 1000 7 6 5 100 4 3 10 2 1 0 25 Datasheet 50 75 100 125 1 0.25 150 8 0.50 0.75 1.00 1.25 1.50 1.75 2.00 Revision 1.10 2022-09-21 IKN01N60RC2 600 V Reverse Conducting Drive 2 4 Characteristics diagrams Typical switching times as a function of gate resistor t = f(RG) IC = 1 A, VCC = 400 V, Tvj = 150 °C, VGE = 0/15 V Typical switching times as a function of junction temperature t = f(Tvj) IC = 1 A, VCC = 400 V, VGE = 0/15 V, RG = 49 Ω 1000 1000 100 100 10 10 1 1 0 200 400 600 800 25 1000 Typical switching energy losses as a function of collector current E = f(IC) VCC = 400 V, Tvj = 150 °C, VGE = 0/15 V, RG = 49 Ω 50 75 100 125 150 Typical switching energy losses as a function of gate resistor E = f(RG) IC = 1 A, VCC = 400 V, Tvj = 150 °C, VGE = 0/15 V 120 250 100 200 80 150 60 100 40 50 20 0 0.25 Datasheet 0 0.50 0.75 1.00 1.25 1.50 1.75 2.00 0 9 200 400 600 800 1000 Revision 1.10 2022-09-21 IKN01N60RC2 600 V Reverse Conducting Drive 2 4 Characteristics diagrams Typical switching energy losses as a function of junction temperature E = f(Tvj) IC = 1 A, VCC = 400 V, VGE = 0/15 V, RG = 49 Ω Typical switching energy losses as a function of collector emitter voltage E = f(VCE) IC = 1 A, Tvj = 150 °C, VGE = 0/15 V, RG = 49 Ω 60 60 50 50 40 40 30 30 20 20 10 10 0 25 50 75 100 125 0 150 200 Typical gate charge VGE = f(QG) IC = 1 A 250 300 350 400 450 500 Typical capacitance as a function of collector-emitter voltage C = f(VCE) f = 1000 kHz, VGE = 0 V 1000 15 12 100 9 6 10 3 0 1 0 Datasheet 2 4 6 8 10 0 10 5 10 15 20 25 30 Revision 1.10 2022-09-21 IKN01N60RC2 600 V Reverse Conducting Drive 2 4 Characteristics diagrams Typical short circuit collector current as a function of gate-emitter voltage IC(SC) = f(VGE) Tvj ≤ 150 °C, VCC ≤ 400 V IGBT transient thermal impedance as a function of pulse width Zth(j-c) = f(tp) D = tp/T 100 9 8 7 10 6 5 1 4 3 0.1 2 1 0.01 1E-6 0 12 13 14 15 16 17 18 Diode transient thermal impedance as a function of pulse width Zth(j-c) = f(tp) D = tp/T 1E-5 0.0001 0.001 0.01 0.1 1 10 Typical diode forward current as a function of forward voltage IF = f(VF) 3.0 100 2.5 10 2.0 1 1.5 0.1 1.0 0.01 0.001 1E-7 1E-6 1E-5 0.0001 0.001 0.01 Datasheet 0.5 0.1 1 0.0 10 0.0 11 0.5 1.0 1.5 2.0 2.5 3.0 Revision 1.10 2022-09-21 IKN01N60RC2 600 V Reverse Conducting Drive 2 4 Characteristics diagrams Typical diode forward voltage as a function of junction temperature VF = f(Tvj) Typical reverse recovery time as a function of diode current slope trr = f(diF/dt) VR = 400 V, IF = 1 A 3.0 320 280 2.5 240 2.0 200 1.5 160 120 1.0 80 0.5 40 0.0 25 50 75 100 125 0 150 0 Typical reverse recovery charge as a function of diode current slope Qrr = f(diF/dt) VR = 400 V, IF = 1 A 0.200 50 100 150 200 250 300 Typical reverse recovery current as a function of diode current slope Irr = f(diF/dt) VR = 400 V, IF = 1 A 2.5 2.0 0.150 1.5 0.100 1.0 0.050 0.5 0.000 0.0 0.0 Datasheet 50.0 100.0 150.0 200.0 250.0 300.0 0 12 50 100 150 200 250 300 Revision 1.10 2022-09-21 IKN01N60RC2 600 V Reverse Conducting Drive 2 4 Characteristics diagrams Typical diode peak rate of fall of reverse recovery current as a function of diode current slope dirr/dt = f(diF/dt) VR = 400 V, IF = 1 A 0 -10 -20 -30 -40 0 Datasheet 50 100 150 200 250 300 13 Revision 1.10 2022-09-21 IKN01N60RC2 600 V Reverse Conducting Drive 2 5 Package outlines 5 Package outlines PG-SOT223-3 DOCUMENT NO. Z8B00180553 SCALE DIM A A1 A2 b b2 c D E E1 e e1 L N O MILLIMETERS MAX MIN 1.80 1.52 0.10 1,50 1.70 0.80 0.60 3.10 2.95 0.32 0.24 6.30 6.70 7.30 6.70 3.70 3.30 2.3 BASIC 4.6 BASIC 0.75 1.10 3 0 INCHES MIN 0.060 0.059 0.024 0.116 0.009 0.248 0.264 0.130 MAX 0.071 0.004 0.067 0.031 0.122 0.013 0.264 0.287 0.146 0.091 BASIC 0.181 BASIC 0.030 0.043 3 2.5 0 2.5 5mm EUROPEAN PROJECTION ISSUE DATE 24-02-2016 REVISION 01 Figure 1 Datasheet 14 Revision 1.10 2022-09-21 IKN01N60RC2 600 V Reverse Conducting Drive 2 6 Testing conditions 6 Testing Conditions Testing conditions VGE(t) I,V 90% VGE t rr = t a + t b Q rr = Q a + Q b dIF/dt a 10% VGE b t Qa IC(t) Qb dI 90% IC 90% IC 10% IC 10% IC Figure C. Definition of diode switching characteristics t VCE(t) t td(off) tf t tr td(on) Figure A. VGE(t) 90% VGE Figure D. 10% VGE t IC(t) CC 2% IC t Figure E. Dynamic test circuit Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor Cr, (only for ZVT switching) VCE(t) t2 E off = t4 VCE x IC x dt E t1 t1 on = VCE x IC x d t 2% VCC t3 t2 t3 t4 t Figure B. Figure 2 Datasheet 15 Revision 1.10 2022-09-21 IKN01N60RC2 600 V Reverse Conducting Drive 2 Revision history Revision history Document revision Date of release Description of changes 1.00 2021-09-27 Final datasheet 1.01 2021-10-15 Change of Potential Applications 1.10 2022-09-21 Add of wave soldering conditions Datasheet 16 Revision 1.10 2022-09-21 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2022-09-21 Published by Infineon Technologies AG 81726 Munich, Germany © 2022 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-ABB683-003 Important notice The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. Warnings Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.