TRENCHSTOP™ Series
IKP10N60T
p
Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft,
fast recovery anti-parallel Emitter Controlled HE diode
Features:
Very low VCE(sat) 1.5V (typ.)
Maximum Junction Temperature 175°C
Short circuit withstand time 5s
Designed for :
- Variable Speed Drive for washing machines, air conditioners and induction
cooking
- Uninterrupted Power Supply
TRENCHSTOP™ and Fieldstop technology for 600V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge
Very soft, fast recovery anti-parallel Emitter Controlled HE diode
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
IKP10N60T
C
G
E
PG-TO220-3
VCE
IC
VCE(sat),Tj=25°C
Tj,max
Marking Code
Package
600V
10A
1.5V
175C
K10T60
PG-TO-220-3
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage, Tj ≥ 25C
VCE
600
DC collector current, limited by Tjmax
TC = 25C
TC = 100C
IC
24
18
Pulsed collector current, tp limited by Tjmax
ICpuls
30
Turn off safe operating area, VCE = 600V, Tj = 175C, tp = 1µs
-
30
Diode forward current, limited by Tjmax
TC = 25C
TC = 100C
IF
24
18
Diode pulsed current, tp limited by Tjmax
IFpuls
30
Gate-emitter voltage
VGE
20
V
tSC
5
s
Power dissipation TC = 25C
Ptot
110
W
Operating junction temperature
Tj
-40...+175
Storage temperature
Tstg
-55...+150
Short circuit withstand time
Soldering temperature,
wavesoldering, 1.6 mm (0.063 in.) from case for 10s
2)
Unit
V
A
2)
VGE = 15V, VCC 400V, Tj 150C
1
Value
C
260
J-STD-020 and JESD-022
Allowed number of short circuits: 1s.
IFAG IPC TD VLS
1
Rev. 2.6 11.05.2015
TRENCHSTOP™ Series
IKP10N60T
p
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
RthJC
1.35
K/W
RthJCD
1.9
RthJA
62
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Electrical Characteristic, at Tj = 25 C, unless otherwise specified
Parameter
Symbol
Conditions
Value
min.
typ.
max.
600
-
-
T j =2 5 C
-
1.5
2.05
T j =1 7 5 C
-
1.8
-
T j =2 5 C
-
1.6
2.0
T j =1 7 5 C
-
1.6
-
4.1
4.6
5.7
Unit
Static Characteristic
Collector-emitter breakdown voltage
V ( B R ) C E S V G E = 0V , I C = 0 .2m A
Collector-emitter saturation voltage
VCE(sat)
VF
Diode forward voltage
V
V G E = 15 V , I C = 10 A
V G E = 0V , I F = 1 0 A
Gate-emitter threshold voltage
VG E(th)
I C = 0. 3m A, V C E = V G E
Zero gate voltage collector current
ICES
V C E = 60 0 V ,
V G E = 0V
µA
T j =2 5 C
-
-
40
T j =1 7 5 C
-
-
1000
Gate-emitter leakage current
IGES
V C E = 0V , V G E =2 0 V
-
-
100
nA
Transconductance
gfs
V C E = 20 V , I C = 10 A
-
6
-
S
Integrated gate resistor
RGint
Ω
none
Dynamic Characteristic
Input capacitance
Ciss
V C E = 25 V ,
-
551
-
Output capacitance
Coss
V G E = 0V ,
-
40
-
Reverse transfer capacitance
Crss
f= 1 MH z
-
17
-
Gate charge
QGate
V C C = 48 0 V, I C =1 0 A
-
62
-
nC
-
7
-
nH
-
100
-
A
pF
V G E = 15 V
LE
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
1)
1)
IC(SC)
V G E = 15 V ,t S C 5 s
V C C = 4 0 0 V,
T j = 2 5 C
Allowed number of short circuits: 1s.
IFAG IPC TD VLS
2
Rev. 2.6 11.05.2015
TRENCHSTOP™ Series
IKP10N60T
p
Switching Characteristic, Inductive Load, at Tj=25 C
Parameter
Symbol
Conditions
Value
min.
typ.
max.
-
12
-
-
8
-
-
215
-
-
38
-
-
0.16
-
-
0.27
-
-
0.43
-
Unit
IGBT Characteristic
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
T j=25 C,
VCC=400V,IC=10A,
VGE=0/15V,rG=23,
L =60nH, C=40pF
L , C f rom Fig. E
Energy losses include
“tail” and diode reverse
recovery.
ns
mJ
Anti-Parallel Diode Characteristic
Diode reverse recovery time
trr
T j =2 5 C ,
-
115
-
ns
Diode reverse recovery charge
Qrr
V R = 4 00 V , I F = 1 0 A,
-
0.38
-
µC
Diode peak reverse recovery current
Irrm
d i F / d t =8 8 0 A/ s
-
10
-
A
Diode peak rate of fall of reverse
recovery current during t b
d i r r /d t
-
680
-
A/s
Switching Characteristic, Inductive Load, at Tj=175 C
Parameter
Symbol
Conditions
Value
min.
typ.
max.
-
10
-
-
11
-
-
233
-
-
63
-
-
0.26
-
-
0.35
-
-
0.61
-
Unit
IGBT Characteristic
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
T j=175 C,
VCC=400V,IC=10A,
VGE=0/15V,rG=23,
L =60nH, C=40pF
L , C f rom Fig. E
Energy losses include
“tail” and diode reverse
recovery.
ns
mJ
Anti-Parallel Diode Characteristic
Diode reverse recovery time
trr
T j =1 7 5 C
-
200
-
ns
Diode reverse recovery charge
Qrr
V R = 4 00 V , I F = 1 0 A,
-
0.92
-
µC
Diode peak reverse recovery current
Irrm
d i F / d t =8 8 0 A/ s
-
13
-
A
Diode peak rate of fall of reverse
recovery current during t b
d i r r /d t
-
390
-
A/s
IFAG IPC TD VLS
3
Rev. 2.6 11.05.2015
TRENCHSTOP™ Series
IKP10N60T
p
t p =1µs
T C =80°C
20A
15A
T C =110°C
10A
Ic
5A
0A
10Hz
5µs
10A
25A
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
30A
20µs
100µs
1A
500µs
10ms
Ic
DC
100Hz
1kHz
10kHz
0,1A
1V
100kHz
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(Tj 175C, D = 0.5, VCE = 400V,
VGE = 0/15V, rG = 23)
10V
100V
1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, TC = 25C, Tj 175C;
VGE=0/15V)
120W
20A
IC, COLLECTOR CURRENT
Ptot, POWER DISSIPATION
100W
80W
60W
40W
15A
10A
5A
20W
0W
25°C
0A
50°C
75°C
100°C 125°C 150°C
25°C
TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function of
case temperature
(Tj 175C)
IFAG IPC TD VLS
4
50°C
75°C
100°C
125°C
150°C
TC, CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(VGE 15V, Tj 175C)
Rev. 2.6 11.05.2015
TRENCHSTOP™ Series
30A
30A
25A
V G E =20V
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
25A
15V
20A
12V
10V
15A
8V
6V
10A
5A
V G E =20V
15V
20A
12V
10V
15A
8V
6V
10A
5A
0A
0A
0V
1V
2V
3V
4V
0V
25A
20A
15A
10A
T J =175°C
5A
25°C
0A
0V
2V
4V
6V
8V
10V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(VCE=20V)
IFAG IPC TD VLS
1V
2V
3V
4V
5V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristic
(Tj = 175°C)
VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
IC, COLLECTOR CURRENT
IKP10N60T
p
3,0V
IC =20A
2,5V
IC =10A
2,0V
1,5V
I C =5A
1,0V
0,5V
0,0V
-50°C
0°C
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of
junction temperature
(VGE = 15V)
5
Rev. 2.6 11.05.2015
TRENCHSTOP™ Series
IKP10N60T
p
t d(off)
t d(off)
100ns
t, SWITCHING TIMES
t, SWITCHING TIMES
100ns
tf
t d(on)
10ns
tf
t d(on)
10ns
tr
tr
1ns
1ns
0A
5A
10A
15A
20A
IC, COLLECTOR CURRENT
Figure 9. Typical switching times as a
function of collector current
(inductive load, TJ=175°C,
VCE = 400V, VGE = 0/15V, rG = 23Ω,
Dynamic test circuit in Figure E)
RG, GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, TJ = 175°C,
VCE= 400V, VGE = 0/15V, IC = 10A,
Dynamic test circuit in Figure E)
t d(off)
t, SWITCHING TIMES
100ns
tf
t d(on)
10ns
tr
VGE(th), GATE-EMITT TRSHOLD VOLTAGE
7V
6V
4V
m ax.
typ.
5V
m in.
3V
2V
1V
1ns
25°C
50°C
75°C
0V
-50°C
100°C 125°C 150°C
TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE = 400V,
VGE = 0/15V, IC = 10A, rG=23Ω,
Dynamic test circuit in Figure E)
IFAG IPC TD VLS
0°C
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(IC = 0.3mA)
6
Rev. 2.6 11.05.2015
IKP10N60T
p
TRENCHSTOP™ Series
*) E on and E ts include losses
1,0m J
0,8m J
E off
0,6m J
0,4m J
E on *
0,2m J
0,8 m J
0,6 m J
E off
0,4 m J
E on *
0,2 m J
0,0 m J
0,0m J
0A
5A
10A
E ts *
due to diode recovery
E ts *
due to diode recovery
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
*) E on and E ts include losses
15A
IC, COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, rG = 23Ω,
Dynamic test circuit in Figure E)
RG, GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, IC = 10A,
Dynamic test circuit in Figure E)
*) E on and E ts include losses
*) E on and E ts include losses
due to diode recovery
0,6m J
0,5m J
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
due to diode recovery
E ts *
0,4m J
0,3m J E off
0,2m J
0,1m J
E on *
0,8m J
0,6m J
E ts *
0,4m J
E off
0,2m J
E on *
0,0m J
50°C
100°C
0,0m J
300V
150°C
TJ, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load, VCE = 400V,
VGE = 0/15V, IC = 10A, rG = 23Ω,
Dynamic test circuit in Figure E)
IFAG IPC TD VLS
350V
400V
450V
500V
550V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load, TJ = 175°C,
VGE = 0/15V, IC = 10A, rG = 23Ω,
Dynamic test circuit in Figure E)
7
Rev. 2.6 11.05.2015
TRENCHSTOP™ Series
IKP10N60T
p
1nF
VGE, GATE-EMITTER VOLTAGE
C iss
c, CAPACITANCE
15V
120V
480V
10V
100pF
C oss
5V
C rss
0V
0nC
10pF
20nC
40nC
60nC
QGE, GATE CHARGE
Figure 17. Typical gate charge
(IC=10 A)
0V
10V
20V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 18. Typical capacitance as a function
of collector-emitter voltage
(VGE=0V, f = 1 MHz)
150A
tSC, SHORT CIRCUIT WITHSTAND TIME
IC(sc), short circuit COLLECTOR CURRENT
12µs
125A
100A
75A
50A
25A
0A
12V
14V
16V
8µs
6µs
4µs
2µs
0µs
10V
18V
VGE, GATE-EMITTETR VOLTAGE
Figure 19. Typical short circuit collector
current as a function of gateemitter voltage
(VCE 400V, Tj 150C)
IFAG IPC TD VLS
10µs
11V
12V
13V
14V
VGE, GATE-EMITETR VOLTAGE
Figure 20. Short circuit withstand time as a
function of gate-emitter voltage
(VCE=400V, start at TJ=25°C,
TJmax