IKP20N60T
TRENCHSTOP™ Series
Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft,
fast recovery anti-parallel Emitter Controlled HE diode
C
Features:
Very low VCE(sat) 1.5V (typ.)
Maximum Junction Temperature 175°C
Short circuit withstand time 5s
Designed for :
- Frequency Converters
- Uninterrupted Power Supply
TRENCHSTOP™ and Fieldstop technology for 600V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
- low VCE(sat)
Positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge
Very soft, fast recovery anti-parallel Emitter Controlled HE diode
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
IKP20N60T
G
E
PG-TO220-3
VCE
IC
VCE(sat),Tj=25°C
Tj,max
Marking
Package
600V
20A
1.5V
175C
K20T60
PG-TO220-3
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage, Tj ≥ 25C
VCE
DC collector current, limited by Tjmax
TC = 25C
TC = 100C
IC
Value
600
28
ICpul s
60
Turn off safe operating area, VCE = 600V, Tj = 175C, tp = 1µs
-
60
TC = 25C
TC = 100C
IF
V
41
Pulsed collector current, tp limited by Tjmax
Diode forward current, limited by Tjmax
Unit
A
41
28
Diode pulsed current, tp limited by Tjmax
IFpul s
60
Gate-emitter voltage
VGE
20
V
tSC
5
s
Power dissipation TC = 25C
Ptot
166
W
Operating junction temperature
Tj
-40...+175
Storage temperature
Tstg
-55...+150
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
-
Short circuit withstand time
2)
VGE = 15V, VCC 400V, Tj 150C
1
2)
C
260
J-STD-020 and JESD-022
Allowed number of short circuits: 1s.
IFAG IPC TD VLS
1
Rev. 2.8 18.05.2015
IKP20N60T
TRENCHSTOP™ Series
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
RthJC
0.9
RthJCD
1.5
RthJA
62
K/W
Electrical Characteristic, at Tj = 25 C, unless otherwise specified
Parameter
Symbol
Conditions
Value
min.
Typ.
max.
600
-
-
T j =2 5 C
-
1.5
2.05
T j =1 7 5 C
-
1.9
-
Unit
Static Characteristic
Collector-emitter breakdown voltage
V ( B R ) C E S V G E = 0V , I C = 0 .2m A
V G E = 15 V , I C = 20 A
Collector-emitter saturation voltage
VCE(sat)
V
V G E = 0V , I F = 2 0 A
Diode forward voltage
VF
Gate-emitter threshold voltage
VGE(th)
T j =2 5 C
-
1.65
2.05
T j =1 7 5 C
-
1.6
-
4.1
4.9
5.7
T j =2 5 C
-
-
40
T j =1 7 5 C
-
-
1500
I C = 29 0µ A , V C E = V G E
V C E = 60 0 V ,
V G E = 0V
Zero gate voltage collector current
ICES
µA
Gate-emitter leakage current
IGES
V C E = 0V , V G E =2 0 V
-
-
100
nA
Transconductance
gfs
V C E = 20 V , I C = 20 A
-
11
-
S
Integrated gate resistor
RGint
Ω
-
Dynamic Characteristic
Input capacitance
Ciss
V C E = 25 V ,
-
1100
-
Output capacitance
Coss
V G E = 0V ,
-
71
-
Reverse transfer capacitance
Crss
f= 1 MH z
-
32
-
-
120
-
nC
Gate charge
QGate
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
1)
V C C = 48 0 V, I C =2 0 A
V G E = 15 V
pF
LE
PG - T O 2 2 0- 3
-
7
-
nH
IC(SC)
V G E = 15 V ,t S C 5 s
V C C = 4 0 0 V,
T j 150C
-
183.3
-
A
1)
Allowed number of short circuits: 1s.
IFAG IPC TD VLS
2
Rev. 2.8 18.05.2015
IKP20N60T
TRENCHSTOP™ Series
Switching Characteristic, Inductive Load, at Tj=25 C
Parameter
Symbol
Conditions
Value
min.
Typ.
max.
-
18
-
-
14
-
-
199
-
-
42
-
-
0.31
-
-
0.46
-
-
0.77
-
Unit
IGBT Characteristic
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
T j=25 C,
VCC=400V,IC=20A,
VGE=0/15V,rG=12,
L =131nH,C =31pF
L , C f rom Fig. E
Energy losses include
“tail” and diode reverse
recovery.
ns
mJ
Anti-Parallel Diode Characteristic
Diode reverse recovery time
trr
T j =2 5 C ,
-
41
-
ns
Diode reverse recovery charge
Qrr
V R = 4 00 V , I F = 2 0 A,
-
0.31
-
µC
Diode peak reverse recovery current
Irrm
d i F / d t =8 8 0 A/ s
-
13.3
-
A
Diode peak rate of fall of reverse
recovery current during t b
d i r r /d t
-
711
-
A/s
Switching Characteristic, Inductive Load, at Tj=175 C
Parameter
Symbol
Conditions
Value
min.
Typ.
max.
-
18
-
-
18
-
-
223
-
-
76
-
-
0.51
-
-
0.64
-
-
1.15
-
Unit
IGBT Characteristic
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
T j=175 C,
VCC=400V,IC=20A,
VGE=0/15V,rG=12,
L =131nH,C =31pF
L , C f rom Fig. E
Energy losses include
“tail” and diode reverse
recovery.
ns
mJ
Anti-Parallel Diode Characteristic
Diode reverse recovery time
trr
T j =1 7 5 C
-
176
-
ns
Diode reverse recovery charge
Qrr
V R = 4 00 V , I F = 2 0 A,
-
1.46
-
µC
Diode peak reverse recovery current
Irrm
d i F / d t =8 8 0 A/ s
-
18.9
-
A
Diode peak rate of fall of reverse
recovery current during t b
d i r r /d t
-
467
-
A/s
IFAG IPC TD VLS
3
Rev. 2.8 18.05.2015
IKP20N60T
TRENCHSTOP™ Series
t p =2µs
10µs
50A
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
60A
T C =80°C
40A
T C =110°C
30A
20A
Ic
10A
0A
10Hz
10A
50µs
1A
1ms
DC
10ms
Ic
100Hz
1kHz
10kHz
0.1A
1V
100kHz
f, SWITCHING FREQUENCY
10V
100V
1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function of
switching frequency
(Tj 175C, D = 0.5, VCE = 400V,
VGE = 0/15V, rG = 12)
Figure 2. Safe operating area
(D = 0, TC = 25C, Tj 175C;
VGE=0/15V)
160W
40A
IC, COLLECTOR CURRENT
Ptot, POWER DISSIPATION
140W
120W
100W
80W
60W
40W
30A
20A
10A
20W
0W
25°C
50°C
75°C
0A
25°C
100°C 125°C 150°C
TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature
(Tj 175C)
IFAG IPC TD VLS
50°C
75°C
100°C 125°C 150°C
TC, CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(VGE 15V, Tj 175C)
4
Rev. 2.8 18.05.2015
IKP20N60T
TRENCHSTOP™ Series
50A
V G E =20V
V G E =20V
40A
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
50A
15V
13V
30A
11V
9V
20A
7V
10A
40A
15V
13V
30A
11V
20A
7V
9V
10A
0A
0A
0V
1V
2V
3V
0V
VCE, COLLECTOR-EMITTER VOLTAGE
VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE
IC, COLLECTOR CURRENT
30A
25A
20A
15A
T J =175°C
25°C
0A
0V
2V
4V
6V
8V
2.5V
4V
IC =40A
2.0V
1.5V
I C =20A
1.0V
IC =10A
0.5V
0.0V
0°C
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(VCE=10V)
IFAG IPC TD VLS
3V
Figure 6. Typical output characteristic
(Tj = 175°C)
35A
5A
2V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
10A
1V
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function
of junction temperature
(VGE = 15V)
5
Rev. 2.8 18.05.2015
IKP20N60T
TRENCHSTOP™ Series
t d(off)
t d(off)
t, SWITCHING TIMES
t, SWITCHING TIMES
100ns
tf
t d(on)
10ns
tf
100ns
t d(on)
tr
tr
10ns
1ns
0A
5A
10A
15A
20A
25A
30A
35A
IC, COLLECTOR CURRENT
RG, GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current
(inductive load, TJ=175°C,
VCE = 400V, VGE = 0/15V, rG = 12Ω,
Dynamic test circuit in Figure E)
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, TJ = 175°C,
VCE= 400V, VGE = 0/15V, IC = 20A,
Dynamic test circuit in Figure E)
t d(off)
t, SWITCHING TIMES
100ns
tf
t d(on)
tr
10ns
25°C
50°C
75°C
6V
m ax.
typ.
5V
4V
m in.
3V
2V
1V
0V
-50°C
100°C 125°C 150°C
TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE = 400V,
VGE = 0/15V, IC = 20A, rG=12Ω,
Dynamic test circuit in Figure E)
IFAG IPC TD VLS
VGE(th), GATE-EMITT TRSHOLD VOLTAGE
7V
0°C
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage as
a function of junction
temperature
(IC = 0.29mA)
6
Rev. 2.8 18.05.2015
IKP20N60T
TRENCHSTOP™ Series
*) Eon and Ets include losses
due to diode recovery
2.4m J
Ets*
2.0mJ
1.6mJ
1.2mJ
Eoff
0.8mJ
*) E on and E ts include losses
due to diode recovery
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
2.4mJ
0.4mJ
E ts *
2.0m J
1.6m J
E off
1.2m J
0.8m J
0.4m J
E on *
Eon*
0.0m J
0.0mJ
0A
5A
10A
15A
20A
25A
30A
35A
IC, COLLECTOR CURRENT
RG, GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, rG = 12Ω,
Dynamic test circuit in Figure E)
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, IC = 20A,
Dynamic test circuit in Figure E)
2.0m J
*) Eon and Ets include losses
due to diode recovery
due to diode recovery
1.6m J
0.8mJ
0.6mJ
Eoff
0.4mJ
0.2mJ
*) E on and E ts include losses
Ets*
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
1.0mJ
1.8m J
Eon*
0.0mJ
25°C
50°C
75°C
1.2m J
1.0m J E ts *
E off
0.8m J
0.6m J
0.4m J
E on *
0.2m J
0.0m J
300V
100°C 125°C 150°C
TJ, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load, VCE = 400V,
VGE = 0/15V, IC = 20A, rG = 12Ω,
Dynamic test circuit in Figure E)
IFAG IPC TD VLS
1.4m J
350V
400V
450V
500V
550V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load, TJ = 175°C,
VGE = 0/15V, IC = 20A, rG = 12Ω,
Dynamic test circuit in Figure E)
7
Rev. 2.8 18.05.2015
IKP20N60T
TRENCHSTOP™ Series
1nF
120V
c, CAPACITANCE
VGE, GATE-EMITTER VOLTAGE
C iss
15V
480V
10V
100pF
C oss
5V
C rss
0V
0nC
30nC
60nC
90nC
120nC
10pF
QGE, GATE CHARGE
0V
10V
20V
30V
40V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 17. Typical gate charge
(IC=20 A)
Figure 18. Typical capacitance as a function
of collector-emitter voltage
(VGE=0V, f = 1 MHz)
300A
tSC, SHORT CIRCUIT WITHSTAND TIME
IC(sc), short circuit COLLECTOR CURRENT
12µs
250A
200A
150A
100A
50A
0A
12V
14V
16V
8µs
6µs
4µs
2µs
0µs
10V
18V
VGE, GATE-EMITTETR VOLTAGE
Figure 19. Typical short circuit collector
current as a function of gateemitter voltage
(VCE 400V, Tj 150C)
IFAG IPC TD VLS
10µs
11V
12V
13V
14V
VGE, GATE-EMITETR VOLTAGE
Figure 20. Short circuit withstand time as a
function of gate-emitter voltage
(VCE=400V, start at TJ=25°C,
TJmax