IKP20N60TXKSA1

IKP20N60T TRENCHSTOP™ Series Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C Features:  Very low VCE(sat) 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s  Designed for : - Frequency Converters - Uninterrupted Power Supply  TRENCHSTOP™ and Fieldstop technology for 600V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed - low VCE(sat)  Positive temperature coefficient in VCE(sat)  Low EMI  Low Gate Charge  Very soft, fast recovery anti-parallel Emitter Controlled HE diode  Qualified according to JEDEC1 for target applications  Pb-free lead plating; RoHS compliant  Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type IKP20N60T G E PG-TO220-3 VCE IC VCE(sat),Tj=25°C Tj,max Marking Package 600V 20A 1.5V 175C K20T60 PG-TO220-3 Maximum Ratings Parameter Symbol Collector-emitter voltage, Tj ≥ 25C VCE DC collector current, limited by Tjmax TC = 25C TC = 100C IC Value 600 28 ICpul s 60 Turn off safe operating area, VCE = 600V, Tj = 175C, tp = 1µs - 60 TC = 25C TC = 100C IF V 41 Pulsed collector current, tp limited by Tjmax Diode forward current, limited by Tjmax Unit A 41 28 Diode pulsed current, tp limited by Tjmax IFpul s 60 Gate-emitter voltage VGE 20 V tSC 5 s Power dissipation TC = 25C Ptot 166 W Operating junction temperature Tj -40...+175 Storage temperature Tstg -55...+150 Soldering temperature, 1.6mm (0.063 in.) from case for 10s - Short circuit withstand time 2) VGE = 15V, VCC  400V, Tj  150C 1 2) C 260 J-STD-020 and JESD-022 Allowed number of short circuits: 1s. IFAG IPC TD VLS 1 Rev. 2.8 18.05.2015 IKP20N60T TRENCHSTOP™ Series Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Thermal resistance, junction – ambient RthJC 0.9 RthJCD 1.5 RthJA 62 K/W Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions Value min. Typ. max. 600 - - T j =2 5 C - 1.5 2.05 T j =1 7 5 C - 1.9 - Unit Static Characteristic Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0V , I C = 0 .2m A V G E = 15 V , I C = 20 A Collector-emitter saturation voltage VCE(sat) V V G E = 0V , I F = 2 0 A Diode forward voltage VF Gate-emitter threshold voltage VGE(th) T j =2 5 C - 1.65 2.05 T j =1 7 5 C - 1.6 - 4.1 4.9 5.7 T j =2 5 C - - 40 T j =1 7 5 C - - 1500 I C = 29 0µ A , V C E = V G E V C E = 60 0 V , V G E = 0V Zero gate voltage collector current ICES µA Gate-emitter leakage current IGES V C E = 0V , V G E =2 0 V - - 100 nA Transconductance gfs V C E = 20 V , I C = 20 A - 11 - S Integrated gate resistor RGint Ω - Dynamic Characteristic Input capacitance Ciss V C E = 25 V , - 1100 - Output capacitance Coss V G E = 0V , - 71 - Reverse transfer capacitance Crss f= 1 MH z - 32 - - 120 - nC Gate charge QGate Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current 1) V C C = 48 0 V, I C =2 0 A V G E = 15 V pF LE PG - T O 2 2 0- 3 - 7 - nH IC(SC) V G E = 15 V ,t S C  5 s V C C = 4 0 0 V, T j  150C - 183.3 - A 1) Allowed number of short circuits: 1s. IFAG IPC TD VLS 2 Rev. 2.8 18.05.2015 IKP20N60T TRENCHSTOP™ Series Switching Characteristic, Inductive Load, at Tj=25 C Parameter Symbol Conditions Value min. Typ. max. - 18 - - 14 - - 199 - - 42 - - 0.31 - - 0.46 - - 0.77 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets T j=25 C, VCC=400V,IC=20A, VGE=0/15V,rG=12, L =131nH,C =31pF L , C f rom Fig. E Energy losses include “tail” and diode reverse recovery. ns mJ Anti-Parallel Diode Characteristic Diode reverse recovery time trr T j =2 5 C , - 41 - ns Diode reverse recovery charge Qrr V R = 4 00 V , I F = 2 0 A, - 0.31 - µC Diode peak reverse recovery current Irrm d i F / d t =8 8 0 A/ s - 13.3 - A Diode peak rate of fall of reverse recovery current during t b d i r r /d t - 711 - A/s Switching Characteristic, Inductive Load, at Tj=175 C Parameter Symbol Conditions Value min. Typ. max. - 18 - - 18 - - 223 - - 76 - - 0.51 - - 0.64 - - 1.15 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets T j=175 C, VCC=400V,IC=20A, VGE=0/15V,rG=12, L =131nH,C =31pF L , C f rom Fig. E Energy losses include “tail” and diode reverse recovery. ns mJ Anti-Parallel Diode Characteristic Diode reverse recovery time trr T j =1 7 5 C - 176 - ns Diode reverse recovery charge Qrr V R = 4 00 V , I F = 2 0 A, - 1.46 - µC Diode peak reverse recovery current Irrm d i F / d t =8 8 0 A/ s - 18.9 - A Diode peak rate of fall of reverse recovery current during t b d i r r /d t - 467 - A/s IFAG IPC TD VLS 3 Rev. 2.8 18.05.2015 IKP20N60T TRENCHSTOP™ Series t p =2µs 10µs 50A IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 60A T C =80°C 40A T C =110°C 30A 20A Ic 10A 0A 10Hz 10A 50µs 1A 1ms DC 10ms Ic 100Hz 1kHz 10kHz 0.1A 1V 100kHz f, SWITCHING FREQUENCY 10V 100V 1000V VCE, COLLECTOR-EMITTER VOLTAGE Figure 1. Collector current as a function of switching frequency (Tj  175C, D = 0.5, VCE = 400V, VGE = 0/15V, rG = 12) Figure 2. Safe operating area (D = 0, TC = 25C, Tj 175C; VGE=0/15V) 160W 40A IC, COLLECTOR CURRENT Ptot, POWER DISSIPATION 140W 120W 100W 80W 60W 40W 30A 20A 10A 20W 0W 25°C 50°C 75°C 0A 25°C 100°C 125°C 150°C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj  175C) IFAG IPC TD VLS 50°C 75°C 100°C 125°C 150°C TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE  15V, Tj  175C) 4 Rev. 2.8 18.05.2015 IKP20N60T TRENCHSTOP™ Series 50A V G E =20V V G E =20V 40A IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 50A 15V 13V 30A 11V 9V 20A 7V 10A 40A 15V 13V 30A 11V 20A 7V 9V 10A 0A 0A 0V 1V 2V 3V 0V VCE, COLLECTOR-EMITTER VOLTAGE VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE IC, COLLECTOR CURRENT 30A 25A 20A 15A T J =175°C 25°C 0A 0V 2V 4V 6V 8V 2.5V 4V IC =40A 2.0V 1.5V I C =20A 1.0V IC =10A 0.5V 0.0V 0°C VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=10V) IFAG IPC TD VLS 3V Figure 6. Typical output characteristic (Tj = 175°C) 35A 5A 2V VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25°C) 10A 1V 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) 5 Rev. 2.8 18.05.2015 IKP20N60T TRENCHSTOP™ Series t d(off) t d(off) t, SWITCHING TIMES t, SWITCHING TIMES 100ns tf t d(on) 10ns tf 100ns t d(on) tr tr 10ns 1ns 0A 5A 10A 15A 20A 25A 30A 35A  IC, COLLECTOR CURRENT       RG, GATE RESISTOR Figure 9. Typical switching times as a function of collector current (inductive load, TJ=175°C, VCE = 400V, VGE = 0/15V, rG = 12Ω, Dynamic test circuit in Figure E) Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ = 175°C, VCE= 400V, VGE = 0/15V, IC = 20A, Dynamic test circuit in Figure E) t d(off) t, SWITCHING TIMES 100ns tf t d(on) tr 10ns 25°C 50°C 75°C 6V m ax. typ. 5V 4V m in. 3V 2V 1V 0V -50°C 100°C 125°C 150°C TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 20A, rG=12Ω, Dynamic test circuit in Figure E) IFAG IPC TD VLS VGE(th), GATE-EMITT TRSHOLD VOLTAGE 7V 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.29mA) 6 Rev. 2.8 18.05.2015 IKP20N60T TRENCHSTOP™ Series *) Eon and Ets include losses due to diode recovery 2.4m J Ets* 2.0mJ 1.6mJ 1.2mJ Eoff 0.8mJ *) E on and E ts include losses due to diode recovery E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES 2.4mJ 0.4mJ E ts * 2.0m J 1.6m J E off 1.2m J 0.8m J 0.4m J E on * Eon* 0.0m J 0.0mJ 0A 5A 10A 15A 20A 25A 30A  35A  IC, COLLECTOR CURRENT    RG, GATE RESISTOR Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ = 175°C, VCE = 400V, VGE = 0/15V, rG = 12Ω, Dynamic test circuit in Figure E) Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ = 175°C, VCE = 400V, VGE = 0/15V, IC = 20A, Dynamic test circuit in Figure E) 2.0m J *) Eon and Ets include losses due to diode recovery due to diode recovery 1.6m J 0.8mJ 0.6mJ Eoff 0.4mJ 0.2mJ *) E on and E ts include losses Ets* E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES 1.0mJ 1.8m J Eon* 0.0mJ 25°C 50°C 75°C 1.2m J 1.0m J E ts * E off 0.8m J 0.6m J 0.4m J E on * 0.2m J 0.0m J 300V 100°C 125°C 150°C TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 20A, rG = 12Ω, Dynamic test circuit in Figure E) IFAG IPC TD VLS 1.4m J 350V 400V 450V 500V 550V VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ = 175°C, VGE = 0/15V, IC = 20A, rG = 12Ω, Dynamic test circuit in Figure E) 7 Rev. 2.8 18.05.2015 IKP20N60T TRENCHSTOP™ Series 1nF 120V c, CAPACITANCE VGE, GATE-EMITTER VOLTAGE C iss 15V 480V 10V 100pF C oss 5V C rss 0V 0nC 30nC 60nC 90nC 120nC 10pF QGE, GATE CHARGE 0V 10V 20V 30V 40V VCE, COLLECTOR-EMITTER VOLTAGE Figure 17. Typical gate charge (IC=20 A) Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz) 300A tSC, SHORT CIRCUIT WITHSTAND TIME IC(sc), short circuit COLLECTOR CURRENT 12µs 250A 200A 150A 100A 50A 0A 12V 14V 16V 8µs 6µs 4µs 2µs 0µs 10V 18V VGE, GATE-EMITTETR VOLTAGE Figure 19. Typical short circuit collector current as a function of gateemitter voltage (VCE  400V, Tj  150C) IFAG IPC TD VLS 10µs 11V 12V 13V 14V VGE, GATE-EMITETR VOLTAGE Figure 20. Short circuit withstand time as a function of gate-emitter voltage (VCE=400V, start at TJ=25°C, TJmax