IKQ100N60TAXKSA1

IGBT LowLossDuoPack:IGBTinTRENCHSTOPTMandFieldstoptechnology withsoft,fastrecoveryantiparallelEmitterControlleddiode IKQ100N60TA 600Vlowlossswitchingseriesthirdgeneration Datasheet IndustrialPowerControl IKQ100N60TA TRENCHSTOPTMseries LowLossDuoPack:IGBTinTRENCHSTOPTMandFieldstoptechnology withsoft,fastrecoveryantiparallelEmitterControlleddiode  Features: C •AutomotiveAEC-Q101qualified •DesignedforDC/ACconvertersforAutomotiveApplication •VerylowVCE(sat)1.5V(typ.) •Maximumjunctiontemperature175°C •Shortcircuitwithstandtime5µs •100%shortcircuittested •100%ofthepartsaredynamicallytested •TRENCHSTOPTMandFieldstoptechnologyfor600V applicationsoffers: -verytightparameterdistribution -highruggedness,temperaturestablebehavior -veryhighswitchingspeed •PositivetemperaturecoefficientinVCE(sat) •LowEMI •LowgatechargeQG •Greenpackage •Verysoft,fastrecoveryantiparallelEmitterControlledHEdiode G E Applications: •Maininverter •Air-Concompressor •PTCheater •Motordrives KeyPerformanceandPackageParameters Type IKQ100N60TA VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package 600V 100A 1.5V 175°C K100T60A PG-TO247-3 2 Rev.2.2,2014-11-21 IKQ100N60TA TRENCHSTOPTMseries TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 3 Rev.2.2,2014-11-21 IKQ100N60TA TRENCHSTOPTMseries MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Collector-emittervoltage,Tvj≥25°C VCE 600 V DCcollectorcurrent,limitedbyTvjmax TC=25°Cvaluelimitedbybondwire TC=130°C IC 160.0 100.0 A Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 400.0 A Turn off safe operating area VCE≤600V,Tvj≤175°C,tp=1µs - 400.0 A Diodeforwardcurrent,limitedbyTvjmax TC=25°Cvaluelimitedbybondwire TC=117°C IF 160.0 100.0 A Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 400.0 A Gate-emitter voltage VGE ±20 V Short circuit withstand time VGE=15.0V,VCC≤400V Allowed number of short circuits < 1000 Time between short circuits: ≥ 1.0s Tvj=150°C tSC PowerdissipationTC=25°C Ptot 714.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C µs 5 1) Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s °C 260 Mounting torque, M3 screw Maximum of mounting processes: 3 M 0.6 Nm ThermalResistance Parameter Characteristic Symbol Conditions Max.Value Unit IGBT thermal resistance,2) junction - case Rth(j-c) 0.21 K/W Diode thermal resistance,2) junction - case Rth(j-c) 0.35 K/W Thermal resistance junction - ambient Rth(j-a) 40 K/W 1) 2) Package not recommended for surface mount application Thermal resistance of thermal grease Rth(c-s) (case to heat sink) of more than 0.1K/W not included. 4 Rev.2.2,2014-11-21 IKQ100N60TA TRENCHSTOPTMseries ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. 600 - - V VGE=15.0V,IC=100.0A Tvj=25°C Tvj=175°C - 1.50 1.90 2.00 - V - 1.65 1.60 2.05 - V 4.1 4.9 5.7 V 40.0 2500.0 - µA StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA Collector-emitter saturation voltage VCEsat Diode forward voltage VF VGE=0V,IF=100.0A Tvj=25°C Tvj=175°C Gate-emitter threshold voltage VGE(th) IC=1.60mA,VCE=VGE Zero gate voltage collector current ICES VCE=600V,VGE=0V Tvj=25°C Tvj=175°C - Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=100.0A - 63.0 - S Integrated gate resistor rG Ω none ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. - 6230 - - 360 - - 175 - - 610.0 - nC - 13.0 - nH - A DynamicCharacteristic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG Internal emitter inductance measured 5mm (0.197 in.) from case LE Short circuit collector current Max. 1000 short circuits IC(SC) Time between short circuits: ≥ 1.0s VCE=25V,VGE=0V,f=1MHz VCC=480V,IC=100.0A, VGE=15V VGE=15.0V,VCC≤400V, tSC≤5µs Tvj=150°C 5 - 802 pF Rev.2.2,2014-11-21 IKQ100N60TA TRENCHSTOPTMseries SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 30 - ns - 38 - ns - 290 - ns - 31 - ns - 3.10 - mJ - 2.50 - mJ - 5.60 - mJ - 225 - ns - 2.80 - µC - 23.0 - A - -393 - A/µs IGBTCharacteristic,atTvj=25°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Tvj=25°C, VCC=400V,IC=100.0A, VGE=0.0/15.0V, RG(on)=3.6Ω,RG(off)=3.6Ω, Lσ=63nH,Cσ=31pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. DiodeCharacteristic,atTvj=25°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Tvj=25°C, VR=400V, IF=100.0A, diF/dt=1100A/µs dirr/dt SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 31 - ns - 52 - ns - 351 - ns - 42 - ns - 6.00 - mJ - 3.70 - mJ - 9.70 - mJ - 300 - ns - 8.70 - µC - 50.0 - A - -847 - A/µs IGBTCharacteristic,atTvj=175°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Tvj=175°C, VCC=400V,IC=100.0A, VGE=0.0/15.0V, RG(on)=3.6Ω,RG(off)=3.6Ω, Lσ=63nH,Cσ=31pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. DiodeCharacteristic,atTvj=175°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Tvj=175°C, VR=400V, IF=100.0A, diF/dt=1050A/µs dirr/dt 6 Rev.2.2,2014-11-21 IKQ100N60TA TRENCHSTOPTMseries 800 700 Ptot,POWERDISSIPATION[W] IC,COLLECTORCURRENT[A] 100 10 not for linear use 1 600 500 400 300 200 100 0.1 1 10 100 0 1000 25 50 VCE,COLLECTOR-EMITTERVOLTAGE[V] 75 100 125 150 175 TC,CASETEMPERATURE[°C] Figure 1. Safeoperatingarea (D=0,TC=25°C,Tj≤175°C,VGE=0/15V, tp=1µs.Provenbyproductiontest.) Figure 2. Powerdissipationasafunctionofcase temperature (Tj≤175°C) 180 300 VGE=20V 160 IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 140 120 100 80 60 40 15V 240 13V 11V 210 9V 180 8V 7V 150 6V 120 90 60 20 0 270 30 25 50 75 100 125 150 0 175 TC,CASETEMPERATURE[°C] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 3. Collectorcurrentasafunctionofcase temperature (VGE≥15V,Tj≤175°C) Figure 4. Typicaloutputcharacteristic (Tj=25°C) 7 Rev.2.2,2014-11-21 IKQ100N60TA TRENCHSTOPTMseries 300 300 270 15V 270 240 13V 240 11V 210 IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] VGE=20V 9V 180 8V 7V 150 6V 120 90 210 180 150 120 90 60 60 30 30 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 4.0 Tj=25°C Tj=175°C 0 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 5. Typicaloutputcharacteristic (Tj=175°C) 4 6 8 10 12 14 Figure 6. Typicaltransfercharacteristic (VCE=20V) 3.0 1000 IC=38A IC=75A IC=100A IC=150A 2.7 td(off) tf td(on) tr 2.4 2.1 t,SWITCHINGTIMES[ns] VCE(sat),COLLECTOR-EMITTERSATURATION[V] 2 VGE,GATE-EMITTERVOLTAGE[V] 1.8 1.5 1.2 0.9 100 0.6 0.3 0.0 0 25 50 75 100 125 150 10 175 Tj,JUNCTIONTEMPERATURE[°C] 0 25 50 75 100 125 150 175 200 IC,COLLECTORCURRENT[A] Figure 7. Typicalcollector-emittersaturationvoltageas Figure 8. Typicalswitchingtimesasafunctionof afunctionofjunctiontemperature collectorcurrent (VGE=15V) (inductiveload,Tj=175°C,VCE=400V, VGE=15/0V,rG=3,6Ω,Dynamictestcircuitin Figure E) 8 Rev.2.2,2014-11-21 IKQ100N60TA TRENCHSTOPTMseries 1E+4 1000 td(off) tf td(on) tr t,SWITCHINGTIMES[ns] t,SWITCHINGTIMES[ns] td(off) tf td(on) tr 1000 100 10 0 10 20 30 40 50 60 70 100 10 80 25 rG,GATERESISTOR[Ω] Figure 9. Typicalswitchingtimesasafunctionofgate resistor (inductiveload,Tj=175°C,VCE=400V, VGE=15/0V,IC=100A,Dynamictestcircuitin Figure E) 100 125 150 175 30 typ. min. max. 6 Eoff Eon Ets E,SWITCHINGENERGYLOSSES[mJ] VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V] 75 Figure 10. Typicalswitchingtimesasafunctionof junctiontemperature (inductiveload,VCE=400V,VGE=15/0V, IC=100A,rG=3,6Ω,Dynamictestcircuitin Figure E) 7 5 4 3 2 1 0 50 Tj,JUNCTIONTEMPERATURE[°C] 0 25 50 75 100 125 25 20 15 10 5 0 150 Tj,JUNCTIONTEMPERATURE[°C] 0 25 50 75 100 125 150 175 200 IC,COLLECTORCURRENT[A] Figure 11. Gate-emitterthresholdvoltageasafunction ofjunctiontemperature (IC=1.6mA) 9 Figure 12. Typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload,Tj=175°C,VCE=400V, VGE=15/0V,rG=3,6Ω,Dynamictestcircuitin Figure E) Rev.2.2,2014-11-21 IKQ100N60TA TRENCHSTOPTMseries 70 10 Eoff Eon Ets E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] 60 Eoff Eon Ets 9 50 40 30 20 8 7 6 5 4 3 2 10 1 0 0 10 20 30 40 50 60 70 0 80 25 rG,GATERESISTOR[Ω] Figure 13. Typicalswitchingenergylossesasa functionofgateresistor (inductiveload,Tj=175°C,VCE=400V, VGE=15/0V,IC=100A,Dynamictestcircuitin Figure E) 125 150 175 120V 480V 14 VGE,GATE-EMITTERVOLTAGE[V] E,SWITCHINGENERGYLOSSES[mJ] 100 16 Eoff Eon Ets 12.0 10.0 8.0 6.0 4.0 2.0 0.0 200 75 Figure 14. Typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload,VCE=400V,VGE=15/0V, IC=100A,rG=3,6Ω,Dynamictestcircuitin Figure E) 16.0 14.0 50 Tj,JUNCTIONTEMPERATURE[°C] 12 10 8 6 4 2 300 400 0 500 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 15. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload,Tj=175°C,VGE=15/0V, IC=100A,RG=3,6Ω,Dynamictestcircuitin Figure E) 0 100 200 300 400 500 600 700 QGE,GATECHARGE[nC] Figure 16. Typicalgatecharge (IC=100A) 10 Rev.2.2,2014-11-21 IKQ100N60TA TRENCHSTOPTMseries 1600 IC(SC),SHORTCIRCUITCOLLECTORCURRENT[A] Cies Coes Cres C,CAPACITANCE[pF] 1E+4 1000 100 10 0 5 10 15 20 25 1400 1200 1000 800 600 400 200 0 30 12 VCE,COLLECTOR-EMITTERVOLTAGE[V] 13 14 15 16 17 18 19 20 VGE,GATE-EMITTERVOLTAGE[V] Figure 17. Typicalcapacitanceasafunctionof collector-emittervoltage (VGE=0V,f=1MHz) Figure 18. Typicalshortcircuitcollectorcurrentasa functionofgate-emittervoltage (VCE≤400V,startatTj≤150°C) ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W] tSC,SHORTCIRCUITWITHSTANDTIME[µs] 14 12 10 8 6 4 2 0.1 D=0.5 0.2 0.1 0.05 0.02 0.01 single pulse 0.01 i: 1 2 3 4 5 6 ri[K/W]: 7.9E-3 0.02027372 0.02064642 0.03120728 0.09632085 0.03448753 τi[s]: 2.0E-5 2.2E-4 1.3E-3 0.01240146 0.1069267 0.527093 0 10 11 12 13 14 0.001 1E-6 15 VGE,GATE-EMITTERVOLTAGE[V] 1E-5 1E-4 0.001 0.01 0.1 1 tp,PULSEWIDTH[s] Figure 19. Shortcircuitwithstandtimeasafunctionof gate-emittervoltage (VCE=400V,startatTj=25°C,Tjmax≤150°C) 11 Figure 20. IGBTtransientthermalimpedanceasa functionofpulsewidthfordifferentduty cyclesD (D=tp/T) Rev.2.2,2014-11-21 IKQ100N60TA TRENCHSTOPTMseries 800 700 trr,REVERSERECOVERYTIME[ns] ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W] Tj=25°C, IF = 100A Tj=175°C, IF = 100A 0.1 D=0.5 0.2 0.1 0.05 0.02 0.01 single pulse 0.01 600 500 400 300 200 100 i: 1 2 3 4 5 6 ri[K/W]: 1.0E-7 0.03261068 0.05586954 0.07418826 0.1318895 0.05550196 τi[s]: 1.0E-7 6.5E-5 5.0E-4 5.0E-3 0.0704059 0.2736117 0.001 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 0 500 1 tp,PULSEWIDTH[s] Figure 21. Diodetransientthermalimpedanceasa functionofpulsewidthfordifferentduty cyclesD (D=tp/T) 800 900 1000 1100 1200 60 Tj=25°C, IF = 100A Tj=175°C, IF = 100A Tj=25°C, IF = 100A Tj=175°C, IF = 100A Irr,REVERSERECOVERYCURRENT[A] Qrr,REVERSERECOVERYCHARGE[µC] 700 Figure 22. Typicalreverserecoverytimeasafunction ofdiodecurrentslope (VR=400V,DynamictestcircuitinFigureE) 10 9 600 diF/dt,DIODECURRENTSLOPE[A/µs] 8 7 6 5 4 3 2 50 40 30 20 10 1 0 500 600 700 800 900 1000 1100 1200 diF/dt,DIODECURRENTSLOPE[A/µs] 0 500 600 700 800 900 1000 1100 1200 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 23. Typicalreverserecoverychargeasa functionofdiodecurrentslope (VR=400V,DynamictestcircuitinFigureE) Figure 24. Typicalreverserecoverycurrentasa functionofdiodecurrentslope (VR=400V,DynamictestcircuitinFigureE) 12 Rev.2.2,2014-11-21 IKQ100N60TA TRENCHSTOPTMseries 0 300 Tj=25°C, IF = 100A Tj=175°C, IF = 100A Tj=25°C Tj=175°C 250 IF,FORWARDCURRENT[A] dIrr/dt,diodepeakrateoffallofIrr[A/µs] -200 -400 -600 -800 -1000 200 150 100 50 -1200 500 600 700 800 900 1000 1100 1200 diF/dt,DIODECURRENTSLOPE[A/µs] 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VF,FORWARDVOLTAGE[V] Figure 25. Typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope (VR=400V,DynamictestcircuitinFigureE) Figure 26. Typicaldiodeforwardcurrentasafunction offorwardvoltage 2.50 IF=38A IF=75A IF=100A IF=150A VF,FORWARDVOLTAGE[V] 2.25 2.00 1.75 1.50 1.25 1.00 0.75 0.50 0 25 50 75 100 125 150 175 Tj,JUNCTIONTEMPERATURE[°C] Figure 27. Typicaldiodeforwardvoltageasafunction ofjunctiontemperature 13 Rev.2.2,2014-11-21 IKQ100N60TA TRENCHSTOPTMseries PG-TO247-3-46 Mold Flash or Protrusions not included MILLIMETERS DIM MIN MAX A 4.90 5.10 A1 2.31 2.51 1.90 2.10 A2 b 1.16 1.26 b1 1.96 2.25 b2 1.96 2.06 b3 2.96 3.25 b4 2.96 3.06 c 0.59 0.66 20.90 21.10 D D1 16.25 16.85 1.05 1.35 D2 D3 0.58 0.78 E 15.70 15.90 13.10 13.50 E1 E3 1.35 1.55 5.44 (BSC) e N L L1 R INCHES MIN 0.193 0.091 0.075 0.046 0.077 0.077 0.117 0.117 0.023 0.823 0.640 0.041 0.023 0.618 0.516 0.053 0.214 (BSC) 3 19.80 1.90 MAX 0.201 0.099 0.083 0.050 0.089 0.081 0.128 0.120 0.026 0.831 0.663 0.053 0.031 0.626 0.531 0.061 0.780 0.075 14 SCALE 0 0 5 5 7.5mm EUROPEAN PROJECTION ISSUE DATE 13-08-2014 3 20.10 4.30 2.10 DOCUMENT NO. Z8B00174295 0.791 0.169 0.083 REVISION 01 Rev.2.2,2014-11-21 IKQ100N60TA TRENCHSTOPTMseries vGE(t) 90% VGE a a 10% VGE b b t iC(t) 90% IC 90% IC 10% IC 10% IC t vCE(t) t td(off) tf td(on) t tr vGE(t) 90% VGE 10% VGE t iC(t) CC 2% IC t vCE(t) t2 E off = t4 VCE x IC x dt E t1 t1 parasitic relief on = VCE x IC x dt 2% VCE t3 t2 t3 t4 t 15 Rev.2.2,2014-11-21 IKQ100N60TA TRENCHSTOPTM series Revision History IKQ100N60TA Revision: 2014-11-21, Rev. 2.2 Previous Revision Revision Date Subjects (major changes since last revision) 1.1 2014-07-31 Preliminary data sheet 2.1 2014-10-17 Final data sheet 2.2 2014-11-21 Update of Transconduction gfs We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all ? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Published by Infineon Technologies AG 81726 Munich, Germany 81726 München, Germany © 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 16 Rev. 2.2, 2014-11-21