IKQ100N60TXKSA1

IKQ100N60T TRENCHSTOPTMseries LowLossDuoPack:IGBTinTRENCHSTOPTMandFieldstoptechnology withsoft,fastrecoveryanti-parallelEmitterControlleddiode  Features: C •VerylowVCE(sat)1.5V(typ.) •Maximumjunctiontemperature175°C •Shortcircuitwithstandtime5µs •TRENCHSTOPTMandFieldstoptechnologyfor600V applicationsoffers: -verytightparameterdistribution -highruggedness,temperaturestablebehavior -highswitchingspeed •PositivetemperaturecoefficientinVCE(sat) •LowEMI •LowgatechargeQG •Increasedcurrentcapability •Greenpackage •Verysoft,fastrecoveryanti-parallelEmitterControlledHE diode G E Applications: •Generalpurposeinverters •Uninterruptiblepowersupplies •Motordrives •Mediumtolowswitchingfrequencypowerconverters KeyPerformanceandPackageParameters Type IKQ100N60T Datasheet www.infineon.com VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package 600V 100A 1.5V 175°C K100T60 PG-TO247-3-46 PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2.3 2017-11-15 IKQ100N60T TRENCHSTOPTMseries TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Datasheet 2 V2.3 2017-11-15 IKQ100N60T TRENCHSTOPTMseries MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Collector-emittervoltage,Tvj≥25°C VCE 600 V DCcollectorcurrent,limitedbyTvjmax Tc=25°Cvaluelimitedbybondwire Tc=130°C IC 160.0 100.0 A Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 400.0 A Turn off safe operating area VCE≤600V,Tvj≤175°C,tp=1µs - 400.0 A Diodeforwardcurrent,limitedbyTvjmax Tc=25°Cvaluelimitedbybondwire Tc=117°C IF 160.0 100.0 A Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 400.0 A Gate-emitter voltage VGE ±20 V Short circuit withstand time VGE=15.0V,VCC≤400V Allowed number of short circuits < 1000 Time between short circuits: ≥ 1.0s Tvj=150°C tSC PowerdissipationTc=25°C Ptot 714.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C µs 5 1) Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s °C 260 ThermalResistance Parameter Symbol Conditions Value min. typ. max. Unit RthCharacteristics IGBT thermal resistance,2) junction - case Rth(j-c) - - 0.21 K/W Diode thermal resistance,2) junction - case Rth(j-c) - - 0.35 K/W Thermal resistance junction - ambient Rth(j-a) - - 40 K/W 1) 2) Package not recommended for surface mount application Thermal resistance of thermal grease Rth(c-s) (case to heat sink) of more than 0.1K/W not included. Datasheet 3 V2.3 2017-11-15 IKQ100N60T TRENCHSTOPTMseries ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. 600 - - V VGE=15.0V,IC=100.0A Tvj=25°C Tvj=175°C - 1.50 1.90 2.00 - V - 1.65 1.60 2.05 - V 4.1 4.9 5.7 V StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA Collector-emitter saturation voltage VCEsat Diode forward voltage VF VGE=0V,IF=100.0A Tvj=25°C Tvj=175°C Gate-emitter threshold voltage VGE(th) IC=1.20mA,VCE=VGE Zero gate voltage collector current ICES VCE=600V,VGE=0V Tvj=25°C Tvj=175°C - 2500 40 - µA Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=100.0A - 63.0 - S Integrated gate resistor rG Ω none ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. - 6230 - - 360 - - 175 - - 610.0 - nC - 13.0 - nH - A DynamicCharacteristic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG Internal emitter inductance measured 5mm (0.197 in.) from case LE Short circuit collector current Max. 1000 short circuits IC(SC) Time between short circuits: ≥ 1.0s VCE=25V,VGE=0V,f=1MHz VCC=480V,IC=100.0A, VGE=15V VGE=15.0V,VCC≤400V, tSC≤5µs Tvj=150°C - 802 pF SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 30 - ns - 38 - ns - 290 - ns - 31 - ns - 3.10 - mJ - 2.50 - mJ - 5.60 - mJ IGBTCharacteristic,atTvj=25°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Datasheet Tvj=25°C, VCC=400V,IC=100.0A, VGE=0.0/15.0V, RG(on)=3.6Ω,RG(off)=3.6Ω, Lσ=63nH,Cσ=31pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. 4 V2.3 2017-11-15 IKQ100N60T TRENCHSTOPTMseries DiodeCharacteristic,atTvj=25°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Tvj=25°C, VR=400V, IF=100.0A, diF/dt=1000A/µs dirr/dt - 230 - ns - 2.80 - µC - 23.0 - A - -450 - A/µs SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 31 - ns - 52 - ns - 351 - ns - 42 - ns - 6.00 - mJ - 3.70 - mJ - 9.70 - mJ - 328 - ns - 8.70 - µC - 48.0 - A - -847 - A/µs IGBTCharacteristic,atTvj=175°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Tvj=175°C, VCC=400V,IC=100.0A, VGE=0.0/15.0V, RG(on)=3.6Ω,RG(off)=3.6Ω, Lσ=63nH,Cσ=31pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. DiodeCharacteristic,atTvj=175°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Datasheet Tvj=175°C, VR=400V, IF=100.0A, diF/dt=1000A/µs dirr/dt 5 V2.3 2017-11-15 IKQ100N60T TRENCHSTOPTMseries 800 700 600 Ptot,POWERDISSIPATION[W] IC,COLLECTORCURRENT[A] 100 10 not for linear use 1 500 400 300 200 100 0.1 1 10 100 0 1000 25 50 VCE,COLLECTOR-EMITTERVOLTAGE[V] 75 100 125 150 175 TC,CASETEMPERATURE[°C] Figure 1. Safeoperatingarea (D=0,TC=25°C,Tj≤175°C,VGE=0/15V, tp=1µs) Figure 2. Powerdissipationasafunctionofcase temperature (Tj≤175°C) 180 300 VGE=20V 270 160 11V IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 13V 240 140 120 100 80 60 210 9V 8V 180 7V 150 6V 120 90 40 60 20 0 15V 30 25 50 75 100 125 150 0 175 TC,CASETEMPERATURE[°C] Figure 3. Collectorcurrentasafunctionofcase temperature (VGE≥15V,Tj≤175°C) Datasheet 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 4. Typicaloutputcharacteristic (Tj=25°C) 6 V2.3 2017-11-15 IKQ100N60T TRENCHSTOPTMseries 300 300 VGE=20V 270 15V 13V 240 11V 210 IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 240 9V 8V 180 7V 150 6V 120 90 210 180 150 120 90 60 60 30 30 0 0.0 0.5 Tj=25°C Tj=175°C 270 1.0 1.5 2.0 2.5 3.0 3.5 0 4.0 0 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 5. Typicaloutputcharacteristic (Tj=175°C) 4 6 8 10 12 14 Figure 6. Typicaltransfercharacteristic (VCE=20V) 3.0 1000 IC=38A IC=75A IC=100A IC=150A 2.7 td(off) tf td(on) tr 2.4 2.1 t,SWITCHINGTIMES[ns] VCE(sat),COLLECTOR-EMITTERSATURATION[V] 2 VGE,GATE-EMITTERVOLTAGE[V] 1.8 1.5 1.2 0.9 100 0.6 0.3 0.0 0 25 50 75 100 125 150 10 175 Tj,JUNCTIONTEMPERATURE[°C] 0 25 50 75 100 125 150 175 Figure 7. Typicalcollector-emittersaturationvoltageas Figure 8. Typicalswitchingtimesasafunctionof afunctionofjunctiontemperature collectorcurrent (VGE=15V) (inductiveload,Tj=175°C,VCE=400V, VGE=15/0V,rG=3,6Ω,Dynamictestcircuitin Figure E) Datasheet 200 IC,COLLECTORCURRENT[A] 7 V2.3 2017-11-15 IKQ100N60T TRENCHSTOPTMseries 1E+4 1000 td(off) tf td(on) tr t,SWITCHINGTIMES[ns] t,SWITCHINGTIMES[ns] td(off) tf td(on) tr 1000 100 10 0 10 20 30 40 50 60 70 100 10 80 25 rG,GATERESISTOR[Ω] Figure 9. Typicalswitchingtimesasafunctionofgate resistor (inductiveload,Tj=175°C,VCE=400V, VGE=15/0V,IC=100A,Dynamictestcircuitin Figure E) 100 125 150 175 30 typ. min. max. 6 Eoff Eon Ets 25 E,SWITCHINGENERGYLOSSES[mJ] VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V] 75 Figure 10. Typicalswitchingtimesasafunctionof junctiontemperature (inductiveload,VCE=400V,VGE=15/0V, IC=100A,rG=3,6Ω,Dynamictestcircuitin Figure E) 7 5 4 3 2 20 15 10 5 1 0 50 Tj,JUNCTIONTEMPERATURE[°C] 0 25 50 75 100 125 0 150 Tj,JUNCTIONTEMPERATURE[°C] Figure 11. Gate-emitterthresholdvoltageasafunction ofjunctiontemperature (IC=1.2mA) Datasheet 0 25 50 75 100 125 150 175 200 IC,COLLECTORCURRENT[A] Figure 12. Typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload,Tj=175°C,VCE=400V, VGE=15/0V,rG=3,6Ω,Dynamictestcircuitin Figure E) 8 V2.3 2017-11-15 IKQ100N60T TRENCHSTOPTMseries 70 10 Eoff Eon Ets 8 E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] 60 Eoff Eon Ets 9 50 40 30 20 7 6 5 4 3 2 10 1 0 0 10 20 30 40 50 60 70 0 80 25 rG,GATERESISTOR[Ω] Figure 13. Typicalswitchingenergylossesasa functionofgateresistor (inductiveload,Tj=175°C,VCE=400V, VGE=15/0V,IC=100A,Dynamictestcircuitin Figure E) 150 175 14 VGE,GATE-EMITTERVOLTAGE[V] E,SWITCHINGENERGYLOSSES[mJ] 125 120V 480V 10.0 8.0 6.0 4.0 12 10 8 6 4 2.0 2 300 400 0 500 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 15. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload,Tj=175°C,VGE=15/0V, IC=100A,RG=3,6Ω,Dynamictestcircuitin Figure E) Datasheet 100 16 Eoff Eon Ets 12.0 0.0 200 75 Figure 14. Typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload,VCE=400V,VGE=15/0V, IC=100A,rG=3,6Ω,Dynamictestcircuitin Figure E) 16.0 14.0 50 Tj,JUNCTIONTEMPERATURE[°C] 0 100 200 300 400 500 600 700 QGE,GATECHARGE[nC] Figure 16. Typicalgatecharge (IC=100A) 9 V2.3 2017-11-15 IKQ100N60T TRENCHSTOPTMseries 1600 IC(SC),SHORTCIRCUITCOLLECTORCURRENT[A] Cies Coes Cres C,CAPACITANCE[pF] 1E+4 1000 100 10 0 5 10 15 20 25 1400 1200 1000 800 600 400 200 0 30 12 VCE,COLLECTOR-EMITTERVOLTAGE[V] 13 14 15 16 17 18 19 20 VGE,GATE-EMITTERVOLTAGE[V] Figure 17. Typicalcapacitanceasafunctionof collector-emittervoltage (VGE=0V,f=1MHz) Figure 18. Typicalshortcircuitcollectorcurrentasa functionofgate-emittervoltage (VCE≤400V,Tj≤150°C) ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W] tSC,SHORTCIRCUITWITHSTANDTIME[µs] 14 12 10 8 6 4 2 0.1 D=0.5 0.2 0.1 0.05 0.02 0.01 single pulse 0.01 i: 1 2 3 4 ri[K/W]: 0.03045787 0.04949446 0.1280814 3.4E-3 τi[s]: 2.0E-4 2.1E-3 0.01548802 0.2130233 0 10 11 12 13 14 15 0.001 1E-6 VGE,GATE-EMITTERVOLTAGE[V] Figure 19. Shortcircuitwithstandtimeasafunctionof gate-emittervoltage (VCE=400V,startatTj=25°C,Tjmax≤150°C) Datasheet 1E-5 1E-4 0.001 0.01 0.1 1 tp,PULSEWIDTH[s] Figure 20. IGBTtransientthermalimpedanceasa functionofpulsewidthfordifferentduty cyclesD (D=tp/T) 10 V2.3 2017-11-15 IKQ100N60T TRENCHSTOPTMseries 800 700 0.1 trr,REVERSERECOVERYTIME[ns] ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W] Tj=25°C, IF = 100A Tj=175°C, IF = 100A D=0.5 0.2 0.1 0.05 0.02 0.01 single pulse 0.01 600 500 400 300 200 100 i: 1 2 3 4 ri[K/W]: 0.05376081 0.11574 0.1831625 4.6E-3 τi[s]: 2.0E-4 2.2E-3 0.01444578 0.2132621 0.001 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 0 500 1 tp,PULSEWIDTH[s] Figure 21. Diodetransientthermalimpedanceasa functionofpulsewidthfordifferentduty cyclesD (D=tp/T) 800 900 1000 1100 1200 60 Tj=25°C, IF = 100A Tj=175°C, IF = 100A Tj=25°C, IF = 100A Tj=175°C, IF = 100A Irr,REVERSERECOVERYCURRENT[A] Qrr,REVERSERECOVERYCHARGE[µC] 700 Figure 22. Typicalreverserecoverytimeasafunction ofdiodecurrentslope (VR=400V,DynamictestcircuitinFigureE) 10 9 600 diF/dt,DIODECURRENTSLOPE[A/µs] 8 7 6 5 4 3 2 50 40 30 20 10 1 0 500 600 700 800 900 1000 1100 0 500 1200 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 23. Typicalreverserecoverychargeasa functionofdiodecurrentslope (VR=400V,DynamictestcircuitinFigureE) Datasheet 600 700 800 900 1000 1100 1200 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 24. Typicalreverserecoverycurrentasa functionofdiodecurrentslope (VR=400V,DynamictestcircuitinFigureE) 11 V2.3 2017-11-15 IKQ100N60T TRENCHSTOPTMseries 0 300 Tj=25°C, IF = 100A Tj=175°C, IF = 100A Tj=25°C Tj=175°C 250 IF,FORWARDCURRENT[A] dIrr/dt,diodepeakrateoffallofIrr[A/µs] -200 -400 -600 -800 200 150 100 -1000 50 -1200 500 600 700 800 900 1000 1100 0 1200 diF/dt,DIODECURRENTSLOPE[A/µs] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VF,FORWARDVOLTAGE[V] Figure 25. Typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope (VR=400V,DynamictestcircuitinFigureE) Figure 26. Typicaldiodeforwardcurrentasafunction offorwardvoltage 2.50 IF=38A IF=75A IF=100A IF=150A 2.25 VF,FORWARDVOLTAGE[V] 2.00 1.75 1.50 1.25 1.00 0.75 0.50 0 25 50 75 100 125 150 175 Tj,JUNCTIONTEMPERATURE[°C] Figure 27. Typicaldiodeforwardvoltageasafunction ofjunctiontemperature Datasheet 12 V2.3 2017-11-15 IKQ100N60T TRENCHSTOPTMseries Package Drawing PG-TO247-3-46 DIM A A1 A2 b b1 b2 MIN 4.90 2.31 1.90 1.16 1.96 1.96 MILLIMETERS MAX 5.10 2.51 2.10 1.26 2.25 2.06 INCHES MIN 0.193 0.091 0.075 0.046 0.077 0.077 MAX 0.201 0.099 0.083 0.050 0.089 0.081 DOCUMENT NO. Z8B00174295 SCALE 0 c D D1 D2 D3 E E1 E3 e N L L1 R Datasheet 0.66 21.10 16.85 1.35 0.78 15.90 13.50 1.55 0.59 20.90 16.25 1.05 0.58 15.70 13.10 1.35 0.026 0.831 0.663 0.053 0.031 0.626 0.531 0.061 0.023 0.823 0.640 0.041 0.023 0.618 0.516 0.053 0.214 (BSC) 5.44 (BSC) 19.80 1.90 20.10 4.30 2.10 0.780 0.075 13 5 5 7.5mm EUROPEAN PROJECTION ISSUE DATE 13-08-2014 3 3 0 0.791 0.169 0.083 REVISION 01 V2.3 2017-11-15 IKQ100N60T TRENCHSTOPTMseries Testing Conditions VGE(t) I,V 90% VGE t rr = t a + t b Q rr = Q a + Q b dIF/dt a 10% VGE b t Qa IC(t) Qb dI 90% IC 90% IC 10% IC 10% IC Figure C. Definition of diode switching characteristics t VCE(t) t td(off) tf td(on) t tr Figure A. VGE(t) 90% VGE Figure D. 10% VGE t IC(t) CC 2% IC t Figure E. Dynamic test circuit Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor Cr, (only for ZVT switching) VCE(t) t2 E off = t4 VCE x IC x dt E t1 t1 on = VCE x IC x d t 2% VCE t3 t2 t3 t4 t Figure B. Datasheet 14 V2.3 2017-11-15 IKQ100N60T TRENCHSTOPTMseries RevisionHistory IKQ100N60T Revision:2017-11-15,Rev.2.3 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2014-11-03 Final data sheet 2.2 2014-11-18 Update of Transconductance gfs 2.3 2017-11-15 Minor change Fig. 20 and Fig. 21 Datasheet 15 V2.3 2017-11-15 Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.     Publishedby InfineonTechnologiesAG 81726München,Germany ©InfineonTechnologiesAG2017. AllRightsReserved. ImportantNotice Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”).Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/orany informationregardingtheapplicationoftheproduct,InfineonTechnologiesherebydisclaimsanyandallwarrantiesand liabilitiesofanykind,includingwithoutlimitationwarrantiesofnon-infringementofintellectualpropertyrightsofanythird party. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseof theproductofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityof customer’stechnicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthe completenessoftheproductinformationgiveninthisdocumentwithrespecttosuchapplication. Forfurtherinformationontheproduct,technology,deliverytermsandconditionsandpricespleasecontactyournearest InfineonTechnologiesoffice(www.infineon.com). PleasenotethatthisproductisnotqualifiedaccordingtotheAECQ100orAECQ101documentsoftheAutomotive ElectronicsCouncil. Warnings Duetotechnicalrequirementsproductsmaycontaindangeroussubstances.Forinformationonthetypesinquestion pleasecontactyournearestInfineonTechnologiesoffice. 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