IKQ50N120CH3

IKQ50N120CH3 HighspeedswitchingseriesthirdgenerationIGBT LowswitchinglossesIGBTinHighspeed3technologycopackedwithsoft,fast recoveryfullcurrentratedanti-parallelEmitterControlleddiode  Features: C HighspeedH3technologyoffers: •Highefficiencyinhardswitchingandresonanttopologies •10µsecshortcircuitwithstandtimeatTvj=175°C •Easyparallelingcapabilityduetopositivetemperature coefficientinVCEsat •LowEMI •LowGateChargeQG •Verysoft,fastrecoveryfullcurrentanti-paralleldiode •MaximumjunctiontemperatureTvjmax=175°C •Pb-freeleadplating;RoHScompliant •CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ G E Applications: •IndustrialUPS •Charger •EnergyStorage •Three-levelSolarStringInverter •Welding ProductValidation: Qualifiedforindustrialapplicationsaccordingtotherelevanttests ofJEDEC47/20/22 KeyPerformanceandPackageParameters Type IKQ50N120CH3 Datasheet www.infineon.com VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package 1200V 50A 2V 175°C K50MCH3 PG-TO247-3-46 PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2.4 2019-04-15 IKQ50N120CH3 HighspeedswitchingseriesthirdgenerationIGBT TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Datasheet 2 V2.4 2019-04-15 IKQ50N120CH3 HighspeedswitchingseriesthirdgenerationIGBT MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Collector-emittervoltage,Tvj≥25°C VCE 1200 V DCcollectorcurrent,limitedbyTvjmax Tc=25°C Tc=135°C IC 100.0 50.0 A Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 200.0 A Turn off safe operating area VCE≤1200V,Tvj≤175°C,tp=1µs - 200.0 A Diodeforwardcurrent,limitedbyTvjmax Tc=25°C Tc=100°C IF 100.0 50.0 A Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 200.0 A Gate-emitter voltage TransientGate-emittervoltage(tp≤10µs,D