IKQ50N120CH3
HighspeedswitchingseriesthirdgenerationIGBT
LowswitchinglossesIGBTinHighspeed3technologycopackedwithsoft,fast
recoveryfullcurrentratedanti-parallelEmitterControlleddiode
Features:
C
HighspeedH3technologyoffers:
•Highefficiencyinhardswitchingandresonanttopologies
•10µsecshortcircuitwithstandtimeatTvj=175°C
•Easyparallelingcapabilityduetopositivetemperature
coefficientinVCEsat
•LowEMI
•LowGateChargeQG
•Verysoft,fastrecoveryfullcurrentanti-paralleldiode
•MaximumjunctiontemperatureTvjmax=175°C
•Pb-freeleadplating;RoHScompliant
•CompleteproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/
G
E
Applications:
•IndustrialUPS
•Charger
•EnergyStorage
•Three-levelSolarStringInverter
•Welding
ProductValidation:
Qualifiedforindustrialapplicationsaccordingtotherelevanttests
ofJEDEC47/20/22
KeyPerformanceandPackageParameters
Type
IKQ50N120CH3
Datasheet
www.infineon.com
VCE
IC
VCEsat,Tvj=25°C
Tvjmax
Marking
Package
1200V
50A
2V
175°C
K50MCH3
PG-TO247-3-46
PleasereadtheImportantNoticeandWarningsattheendofthisdocument
V2.4
2019-04-15
IKQ50N120CH3
HighspeedswitchingseriesthirdgenerationIGBT
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Datasheet
2
V2.4
2019-04-15
IKQ50N120CH3
HighspeedswitchingseriesthirdgenerationIGBT
MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter
Symbol
Value
Unit
Collector-emittervoltage,Tvj≥25°C
VCE
1200
V
DCcollectorcurrent,limitedbyTvjmax
Tc=25°C
Tc=135°C
IC
100.0
50.0
A
Pulsedcollectorcurrent,tplimitedbyTvjmax
ICpuls
200.0
A
Turn off safe operating area
VCE≤1200V,Tvj≤175°C,tp=1µs
-
200.0
A
Diodeforwardcurrent,limitedbyTvjmax
Tc=25°C
Tc=100°C
IF
100.0
50.0
A
Diodepulsedcurrent,tplimitedbyTvjmax
IFpuls
200.0
A
Gate-emitter voltage
TransientGate-emittervoltage(tp≤10µs,D
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