IKW15N120CS7
Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology
Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology copacked with soft and fast recovery Emitter
Controlled 7 diode
Features
•
•
•
•
•
•
•
•
VCE=1200 V
IC=15 A
IGBT co-packed with full current, soft and low Qrr diode
Low saturation voltage VCE(sat) = 2.0 V at Tvj=175 °C
Optimized for hard switching topologies (2-L inverter, 3-L NPC T-type, ...)
Short circuit ruggedness 8 µsec
Wide range of dv/dt controllability
Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/
G
Potential applications
• Industrial Drives
• Industrial Power Supplies
• Solar Inverters
C
E
Product validation
• Product Validation: Qualified for industrial applications according to the relevant tests of
JEDEC47/20/22
Description
C
G
E
Type
Package
Marking
IKW15N120CS7
PG-TO247-3
K15MCS7
Datasheet
www.infineon.com
Please read the Important Notice and Warnings at the end of this document
1.00
2021-03-17
IKW15N120CS7
Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology
Table of contents
Table of contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
1
Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
IGBT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
3
Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5
4
Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
5
Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
6
Testing conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Datasheet
2
1.00
2021-03-17
IKW15N120CS7
Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology
1 Package
1
Package
Table 1
Characteristic values
Parameter
Symbol Note or test condition
Values
Min.
Internal emitter inductance
measured 5mm. (0.197in)
from case
LE
Storage temperature
Tstg
Thermal resistance,
junction-ambient
2
13.0
-55
°C
260
°C
M
0.6
Nm
Rth(j-a)
40
K/W
wave soldering 1.6mm (0.063in.) from case
for 10s
Maximum rated values
Parameter
Symbol Note or test condition
Collector-emitter voltage
VCE
DC collector current, limited
by Tvjmax
IC
Pulsed collector current, tp
limited by Tvjmax
ICpuls
Turn-off safe operating area
Values
Unit
1200
V
TC = 25 °C
36
A
TC = 100 °C
25
Tvj ≥ 25 °C
45
A
45
A
±20
V
±25
V
8
µs
TC = 25 °C
176
W
TC = 100 °C
88
VCE ≤ 1200 V, Tvj ≤ 175 °C
Gate-emitter voltage
VGE
Transient gate-emitter
voltage
VGE
tp ≤ 0.5 µs, D < 0.001
Short circuit withstand time
tSC
VCC ≤ 600 V, VGE = 15 V, Allowed number of
short circuits < 1000, Time between short
circuits ≥ 1.0 s, Tvj = 150 °C
Power dissipation
Ptot
Characteristic values
Parameter
Symbol Note or test condition
Values
Min.
Collector-emitter saturation
voltage
Datasheet
nH
IGBT
Table 2
Table 3
Max.
150
Soldering temperature
Mounting torque , M3 screw
Maximum of mounting
process: 3
Typ.
Unit
VCE sat
IC = 15.0 A, VGE = 15 V
3
Unit
Typ.
Max.
Tvj = 25 °C
1.65
2.00
Tvj = 175 °C
2.00
V
1.00
2021-03-17
IKW15N120CS7
Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology
2 IGBT
Table 3
Characteristic values (continued)
Parameter
Symbol Note or test condition
Values
Unit
Min.
Typ.
Max.
5.15
5.70
6.45
V
40
µA
100
nA
Gate-emitter threshold
voltage
VGEth
IC = 0.30 mA, VCE = VGE, Tvj = 25 °C
Zero gate voltage collector
current
ICES
VCE = 1200 V, VGE = 0 V
Gate-emitter leakage current
IGES
VCE = 0 V, VGE = 20 V
Transconductance
gfs
IC = 15.0 A, VCE = 20 V, Tvj = 175 °C
6.5
S
Short circuit collector
current
ISC
VCC ≤ 600 V, VGE = 15 V, tSC ≤ 8 µs, Allowed
number of short circuits < 1000 , Time
between short circuits ≥ 1.0 s, Tvj = 25 °C
95
A
Input capacitance
Cies
VCE = 25 V, VGE = 0 V, f = 100 kHz
2.2
nF
Output capacitance
Coes
VCE = 25 V, VGE = 0 V, f = 100 kHz
55
pF
Reverse transfer capacitance
Cres
VCE = 25 V, VGE = 0 V, f = 100 kHz
10
pF
Gate charge
QG
IC = 15.0 A, VGE = 15 V, VCE = 960 V
95
nC
Turn-on delay time
tdon
VCE = 600 V, VGE = 15 V,
RGon = 10.0 Ω,
RGoff = 10.0 Ω
Tvj = 25 °C,
IC = 15.0 A
23
ns
Tvj = 175 °C,
IC = 15.0 A
20
VCE = 600 V, VGE = 15 V,
RGon = 10.0 Ω,
RGoff = 10.0 Ω
Tvj = 25 °C,
IC = 15.0 A
11
Tvj = 175 °C,
IC = 15.0 A
14
VCE = 600 V, VGE = 15 V,
RGon = 10.0 Ω,
RGoff = 10.0 Ω
Tvj = 25 °C,
IC = 15.0 A
170
Tvj = 175 °C,
IC = 15.0 A
250
VCE = 600 V, VGE = 15 V,
RGon = 10.0 Ω,
RGoff = 10.0 Ω
Tvj = 25 °C,
IC = 15.0 A
100
Tvj = 175 °C,
IC = 15.0 A
270
VCE = 600 V, VGE = 15 V,
RGon = 10.0 Ω,
RGoff = 10.0 Ω
Tvj = 25 °C,
IC = 15.0 A
0.75
Tvj = 175 °C,
IC = 15.0 A
1.15
VCE = 600 V, VGE = 15 V,
RGon = 10.0 Ω,
RGoff = 10.0 Ω
Tvj = 25 °C,
IC = 15.0 A
0.70
Tvj = 175 °C,
IC = 15.0 A
1.60
Rise time (inductive load)
Turn-off delay time
Fall time (inductive load)
Turn-on energy
Turn-off energy
Datasheet
Tvj = 25 °C
Tvj = 175 °C
tr
tdoff
tf
Eon
Eoff
4
1000
ns
ns
ns
mJ
mJ
1.00
2021-03-17
IKW15N120CS7
Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology
3 Diode
Table 3
Characteristic values (continued)
Parameter
Symbol Note or test condition
Values
Min.
Total switching energy
IGBT thermal resistance,
junction-case
Operating junction
temperature
3
Ets
Tvj = 25 °C,
IC = 15.0 A
1.45
Tvj = 175 °C,
IC = 15.0 A
2.75
Rthjc
0.65
Tvj
-40
mJ
0.85
K/W
175
°C
Maximum rated values
Parameter
Symbol Note or test condition
Repetitive peak reverse
voltage
VRRM
Diode forward current,
limited by Tvjmax
IF
Diode pulsed current,
limited by Tvjmax
IFpuls
Power dissipation
Ptot
Values
Unit
1200
V
TC = 25 °C
30
A
TC = 100 °C
20
Tvj ≥ 25 °C
45
A
TC = 25 °C
100
W
TC = 100 °C
50
Characteristic values
Parameter
Symbol Note or test condition
Values
Min.
Diode forward voltage
Reverse leakage current
Diode reverse recovery time
VF
IR
trr
IF = 15.0 A
VR = 1200 V
Diode reverse recovery
charge
Qrr
Max.
Tvj = 25 °C
1.65
2.15
V
Tvj = 175 °C
1.60
40
µA
Tvj = 25 °C
Tvj = 175 °C
1000
VR = 600 V, RGon = 10.0 Ω Tvj = 25 °C,
IF = 15.0 A
135
VR = 600 V, RGon = 10.0 Ω Tvj = 25 °C,
IF = 15.0 A
Tvj = 175 °C,
IF = 15.0 A
5
Unit
Typ.
Tvj = 175 °C,
IF = 15.0 A
Datasheet
Max.
Diode
Table 4
Table 5
VCE = 600 V, VGE = 15 V,
RGon = 10.0 Ω,
RGoff = 10.0 Ω
Typ.
Unit
ns
265
0.87
µC
2.15
1.00
2021-03-17
IKW15N120CS7
Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology
3 Diode
Table 5
Characteristic values (continued)
Parameter
Symbol Note or test condition
Values
Min.
Diode peak reverse recovery
current
Irrm
VR = 600 V, RGon = 10.0 Ω Tvj = 25 °C,
IF = 15.0 A
dIrr/dt
Erec
VR = 600 V, RGon = 10.0 Ω Tvj = 25 °C,
IF = 15.0 A
-140
Operating junction
temperature
VR = 600 V, RGon = 10.0 Ω Tvj = 25 °C,
IF = 15.0 A
0.25
Note:
Datasheet
mJ
0.75
Rthjc
1.10
Tvj
A/µs
-85
Tvj = 175 °C,
IF = 15.0 A
Diode thermal resistance,
junction-case
A
19.7
Tvj = 175 °C,
IF = 15.0 A
Reverse recovery energy
Max.
15.4
Tvj = 175 °C,
IF = 15.0 A
Diode peak rate off fall of
reverse recovery current
Typ.
Unit
-40
1.50
K/W
175
°C
For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of
the maximum ratings stated in this datasheet.
Dynamic test circuit, parasitic inductance Lσ = 30 nH, Cσ = 8 pF
6
1.00
2021-03-17
IKW15N120CS7
Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology
4 Characteristics diagrams
4
Characteristics diagrams
Reverse bias safe operating area, IGBT
IC = f(VCE)
Tvj≤175 °C, VGE = 15 V
Typical output characteristic, IGBT
IC = f(VCE)
Tvj = 25 °C
100
45
40
35
10
30
25
20
1
15
10
5
0.1
0
1
10
100
1000
0.0
Typical output characteristic, IGBT
IC = f(VCE)
Tvj = 150 °C
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Typical transfer characteristic, IGBT
IC = f(VGE)
VCE = 20 V
45
45
40
40
35
35
30
30
25
25
20
20
15
15
10
10
5
5
0
0
0.0
Datasheet
0.5
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
4
7
5
6
7
8
9
10
11
12
1.00
2021-03-17
IKW15N120CS7
Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology
4 Characteristics diagrams
Typical collector-emitter saturation voltage as a
function of junction temperature, IGBT
VCEsat = f(Tvj)
VGE = 15 V
Gate-emitter threshold voltage as a function of
junction temperature, IGBT
VGEth = f(Tvj)
IC = 0.85 mA
4.0
8
3.5
7
3.0
2.5
6
2.0
5
1.5
1.0
4
0.5
0.0
3
-50
-25
0
25
50
75
100
125
150
175
25
Typical switching times as a function of collector
current, IGBT
t = f(IC)
VCE = 600 V, Tvj = 175 °C, VGE = 0/15 V, RG = 10.0 Ω
75
100
125
150
Typical switching times as a function of gate resistor,
IGBT
t = f(RG)
IC = 15.0 A, VCE = 600 V, Tvj = 175 °C, VGE = 0/15 V
1000
1000
100
100
10
10
1
1
0
Datasheet
50
5
10
15
20
25
30
0
8
10
20
30
40
50
60
70
80
1.00
2021-03-17
IKW15N120CS7
Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology
4 Characteristics diagrams
Typical switching times as a function of junction
temperature, IGBT
t = f(Tvj)
IC = 15.0 A, VCE = 600 V, VGE = 0/15 V, RG = 10.0 Ω
Typical switching energy losses as a function of
collector current, IGBT
E = f(IC)
VCE = 600 V, Tvj = 175 °C, VGE = 0/15 V, RG = 10.0 Ω
1000
6
5
100
4
3
10
2
1
1
25
50
75
100
125
150
0
175
0
Typical switching energy losses as a function of gate
resistor, IGBT
E = f(RG)
IC = 15.0 A, VCE = 600 V, Tvj = 175 °C, VGE = 0/15 V
5
5
10
15
20
25
30
Typical switching energy losses as a function of
junction temperature, IGBT
E = f(Tvj)
IC = 15.0 A, VCE = 600 V, VGE = 0/15 V, RG = 10.0 Ω
3.0
2.5
4
2.0
3
1.5
2
1.0
1
0.5
0.0
0
10
Datasheet
20
30
40
50
60
70
25
80
9
50
75
100
125
150
175
1.00
2021-03-17
IKW15N120CS7
Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology
4 Characteristics diagrams
Typical switching energy losses as a function of
collector emitter voltage, IGBT
E = f(VCE)
IC = 15.0 A, Tvj = 175 °C, VGE = 0/15 V, RG = 10.0 Ω
Typical gate charge, IGBT
VGE = f(QGE)
IC = 15.0 A
4.0
16
3.5
14
3.0
12
2.5
10
2.0
8
1.5
6
1.0
4
0.5
2
0.0
400
0
450
500
550
600
650
700
750
800
0
Typical capacitance as a function of collector-emitter
voltage, IGBT
C = f(VCE)
f = 100 kHz, VGE = 0 V
10000
10
20
30
40
50
60
70
80
90
100
Typical short circuit collector current as a function of
gate-emitter voltage, IGBT
IC(SC) = f(VGE)
Tvj = 150 °C, VCC = 600 V
80
70
1000
60
50
100
40
30
10
20
10
1
0
Datasheet
5
10
15
20
25
0
12.0
30
10
12.5
13.0
13.5
14.0
14.5
15.0
1.00
2021-03-17
IKW15N120CS7
Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology
4 Characteristics diagrams
Short circuit withstand time as a function of gateemitter voltage, IGBT
tSC = f(VGE)
Tvj≤150 °C, VCC = 600 V
IGBT transient thermal impedance, IGBT
Zth = f(tp)
D = tp/T
14
1
12
0.1
10
8
0.01
6
4
0.001
2
0
12.0
12.5
13.0
13.5
14.0
14.5
0.0001
1E-7
15.0
Diode transient thermal impedance as a function of
pulse width, Diode
Zth = f(tp)
D = tp/T
10
1E-6
1E-5 0.0001 0.001
0.01
0.1
1
Typical diode forward current as a function of forward
voltage, Diode
IF = f(VF)
45
40
1
35
30
0.1
25
20
0.01
15
10
0.001
5
0.0001
1E-7
Datasheet
1E-6
1E-5 0.0001 0.001
0.01
0.1
0
1
0.0
11
0.5
1.0
1.5
2.0
2.5
3.0
1.00
2021-03-17
IKW15N120CS7
Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology
4 Characteristics diagrams
Typical diode forward voltage as a function of
junction temperature, Diode
VF = f(Tvj)
Typical diode current slope as a function of gate
resistor, Diode
diF/dt = f(RG)
IC = 15.0 A, VCE = 600 V, VGE = 0/15 V
3.00
1200
2.75
2.50
1000
2.25
2.00
800
1.75
1.50
600
1.25
1.00
400
0.75
0.50
-50
-25
0
25
50
75
100
125
150
200
175
10
Typical reverse recovery time as a function of diode
current slope, Diode
trr = f(diF/dt)
VR = 600 V, IF = 15.0 A
450
20
30
40
50
60
70
80
Typical reverse recovery charge as a function of diode
current slope, Diode
Qrr = f(diF/dt)
VR = 600 V, IF = 15.0 A
3.0
400
2.5
350
2.0
300
1.5
250
1.0
200
0.5
150
100
200
Datasheet
300
400
500
600
700
800
0.0
200
900 1000 1100
12
300
400
500
600
700
800
900 1000 1100
1.00
2021-03-17
IKW15N120CS7
Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology
4 Characteristics diagrams
Typical reverse recovery current as a function of diode
current slope, Diode
Irr = f(diF/dt)
VR = 600 V, IF = 15.0 A
20.0
Typical diode peak rate of fall of reverse recovery
current as a function of diode current slope, Diode
dIrr/dt = f(diF/dt)
VR = 600 V, IF = 15.0 A
0
-20
17.5
-40
15.0
-60
12.5
-80
-100
10.0
-120
7.5
-140
5.0
200 300 400 500 600 700 800 900 1000 1100
-160
200 300 400 500 600 700 800 900 1000 1100
Typical reverse energy losses as a function of diode
current slope, Diode
Erec = f(diF/dt)
VR = 600 V, IF = 15.0 A
1.0
0.8
0.6
0.4
0.2
0.0
200
Datasheet
300
400
500
600
700
800
900 1000 1100
13
1.00
2021-03-17
IKW15N120CS7
Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology
5 Package outlines
5
Package outlines
Package Drawing PG-TO247-3
DIMENSIONS
A
A1
A2
b
b1
b2
c
D
D1
D2
E
E1
E2
E3
e
L
L1
P
Q
S
MILLIMETERS
MIN.
MAX.
4.70
5.30
2.20
2.60
1.50
2.50
1.00
1.40
1.60
2.41
2.57
3.43
0.89
0.38
21.50
20.70
17.65
13.08
1.35
0.51
16.30
15.50
14.15
12.38
5.10
3.40
2.60
1.00
5.44
20.40
19.80
4.50
3.85
3.70
3.50
6.25
5.35
6.30
6.04
DOCUMENT NO.
Z8B00003327
REVISION
06
SCALE 3:1
0 1 2 3 4 5mm
EUROPEAN PROJECTION
ISSUE DATE
25.07.2018
Figure 6
Datasheet
14
1.00
2021-03-17
IKW15N120CS7
Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology
6 Testing conditions
6
Testing conditions
VGE(t)
I,V
90% VGE
t rr = t a + t b
Q rr = Q a + Q b
dIF/dt
a
10% VGE
b
t
Qa
IC(t)
Qb
dI
90% IC
90% IC
10% IC
10% IC
Figure C. Definition of diode switching
characteristics
t
VCE(t)
t
td(off)
tf
td(on)
t
tr
Figure A.
VGE(t)
90% VGE
Figure D.
10% VGE
t
IC(t)
CC
2% IC
t
Figure E. Dynamic test circuit
Parasitic inductance Ls,
parasitic capacitor Cs,
relief capacitor Cr,
(only for ZVT switching)
VCE(t)
t2
E
off
=
t4
VCE x IC x dt
E
t1
t1
t2
t3
on
=
VCE x IC x d t
2% VCE
t3
t4
t
Figure B.
Figure 7
Datasheet
15
1.00
2021-03-17
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Edition 2021-03-17
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2021 Infineon Technologies AG
All Rights Reserved.
Do you have a question about any
aspect of this document?
Email: erratum@infineon.com
Document reference
IFX-
IMPORTANT NOTICE
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”).
With respect to any examples, hints or any typical
values stated herein and/or any information regarding
the application of the product, Infineon Technologies
hereby disclaims any and all warranties and liabilities
of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any
third party.
In addition, any information given in this document is
subject to customer’s compliance with its obligations
stated in this document and any applicable legal
requirements, norms and standards concerning
customer’s products and any use of the product of
Infineon Technologies in customer’s applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments to
evaluate the suitability of the product for the intended
application and the completeness of the product
information given in this document with respect to such
application.
Please note that this product is not qualified
according to the AEC Q100 or AEC Q101 documents
of the Automotive Electronics Council.
WARNINGS
Due to technical requirements products may contain
dangerous substances. For information on the types
in question please contact your nearest Infineon
Technologies office.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized representatives of Infineon Technologies,
Infineon Technologies’ products may not be used in
any applications where a failure of the product or
any consequences of the use thereof can reasonably
be expected to result in personal injury.