IKW15N120H3

IGBT HighspeedDuoPack:IGBTinTrenchandFieldstoptechnologywithsoft,fastrecovery anti-paralleldiode IKW15N120H3 1200Vhighspeedswitchingseriesthirdgeneration Datasheet IndustrialPowerControl IKW15N120H3 Highspeedswitchingseriesthirdgeneration HighspeedDuoPack:IGBTinTrenchandFieldstoptechnologywithsoft,fast recoveryanti-paralleldiode  Features: C TRENCHSTOPTMtechnologyoffering •verylowVCEsat •lowEMI •Verysoft,fastrecoveryanti-paralleldiode •maximumjunctiontemperature175°C •qualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •completeproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ G E Applications: •uninterruptiblepowersupplies •weldingconverters •converterswithhighswitchingfrequency G C E KeyPerformanceandPackageParameters Type IKW15N120H3 VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package 1200V 15A 2.05V 175°C K15H1203 PG-TO247-3 2 Rev.2.1,2014-12-01 IKW15N120H3 Highspeedswitchingseriesthirdgeneration TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 3 Rev.2.1,2014-12-01 IKW15N120H3 Highspeedswitchingseriesthirdgeneration MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Collector-emitter voltage VCE 1200 V DCcollectorcurrent,limitedbyTvjmax TC=25°C TC=100°C IC 30.0 15.0 A Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 60.0 A TurnoffsafeoperatingareaVCE≤1200V,Tvj≤175°C - 60.0 A Diodeforwardcurrent,limitedbyTvjmax TC=25°C TC=100°C IF 15.0 7.5 A Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 60.0 A Gate-emitter voltage VGE ±20 V Short circuit withstand time VGE=15.0V,VCC≤600V Allowed number of short circuits < 1000 Time between short circuits: ≥ 1.0s Tvj=175°C tSC PowerdissipationTC=25°C PowerdissipationTC=100°C Ptot 217.0 105.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C µs 10 Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s °C 260 Mounting torque, M3 screw Maximum of mounting processes: 3 M 0.6 Nm ThermalResistance Parameter Characteristic Symbol Conditions Max.Value Unit IGBT thermal resistance, junction - case Rth(j-c) 0.70 K/W Diode thermal resistance, junction - case Rth(j-c) 2.12 K/W Thermal resistance junction - ambient Rth(j-a) 40 K/W 4 Rev.2.1,2014-12-01 IKW15N120H3 Highspeedswitchingseriesthirdgeneration ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. 1200 - - VGE=15.0V,IC=15.0A Tvj=25°C Tvj=125°C Tvj=175°C - 2.05 2.50 2.70 2.40 - VF VGE=0V,IF=7.5A Tvj=25°C Tvj=175°C - 1.80 1.85 2.35 - Diode forward voltage VF VGE=0V,IF=15.0A Tvj=25°C Tvj=125°C Tvj=175°C - 2.40 2.60 2.60 3.05 - Gate-emitter threshold voltage VGE(th) IC=0.50mA,VCE=VGE 5.0 5.8 6.5 Zero gate voltage collector current ICES VCE=1200V,VGE=0V Tvj=25°C Tvj=175°C - - Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 600 nA Transconductance gfs VCE=20V,IC=15.0A - 7.5 - S StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.50mA Collector-emitter saturation voltage VCEsat Diode forward voltage V V V V V 250.0 µA 2500.0 ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. - 875 - - 75 - - 45 - - 75.0 - nC - 13.0 - nH - A DynamicCharacteristic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG Internal emitter inductance measured 5mm (0.197 in.) from case LE Short circuit collector current Max. 1000 short circuits IC(SC) Time between short circuits: ≥ 1.0s VCE=25V,VGE=0V,f=1MHz VCC=960V,IC=15.0A, VGE=15V VGE=15.0V,VCC≤600V, tSC≤10µs Tvj=175°C 5 - 52 pF Rev.2.1,2014-12-01 IKW15N120H3 Highspeedswitchingseriesthirdgeneration SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 21 - ns - 34 - ns - 260 - ns - 14 - ns - 1.10 - mJ - 0.45 - mJ - 1.55 - mJ - 260 - ns - 0.80 - µC - 7.7 - A - -110 - A/µs IGBTCharacteristic,atTvj=25°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Tvj=25°C, VCC=600V,IC=15.0A, VGE=0.0/15.0V, RG(on)=35.0Ω,RG(off)=35.0Ω, Lσ=95nH,Cσ=67pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. DiodeCharacteristic,atTvj=25°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Tvj=25°C, VR=600V, IF=15.0A, diF/dt=500A/µs dirr/dt SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 19 - ns - 30 - ns - 327 - ns - 43 - ns - 1.60 - mJ - 0.90 - mJ - 2.50 - mJ - 470 - ns - 1.70 - µC - 9.8 - A - -80 - A/µs IGBTCharacteristic,atTvj=175°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Tvj=175°C, VCC=600V,IC=15.0A, VGE=0.0/15.0V, RG(on)=35.0Ω,RG(off)=35.0Ω, Lσ=95nH,Cσ=67pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. DiodeCharacteristic,atTvj=175°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Tvj=175°C, VR=600V, IF=15.0A, diF/dt=500A/µs dirr/dt 6 Rev.2.1,2014-12-01 IKW15N120H3 Highspeedswitchingseriesthirdgeneration 70 100 IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 60 50 40 TC=80° TC=110° 30 TC=80° TC=110° 20 tp=1µs 10 10µs 50µs 100µs 200µs 500µs 1 DC 10 0 1 10 100 0.1 1000 1 f,SWITCHINGFREQUENCY[kHz] 10 100 1000 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 1. Collectorcurrentasafunctionofswitching frequency (Tj≤175°C,D=0.5,VCE=600V,VGE=15/0V, rG=35Ω) Figure 2. Forwardbiassafeoperatingarea (D=0,TC=25°C,Tj≤175°C;VGE=15V) 250 30 IC,COLLECTORCURRENT[A] Ptot,POWERDISSIPATION[W] 200 150 100 20 10 50 0 25 50 75 100 125 150 0 175 TC,CASETEMPERATURE[°C] 25 50 75 100 125 150 175 TC,CASETEMPERATURE[°C] Figure 3. Powerdissipationasafunctionofcase temperature (Tj≤175°C) Figure 4. Collectorcurrentasafunctionofcase temperature (VGE≥15V,Tj≤175°C) 7 Rev.2.1,2014-12-01 IKW15N120H3 Highspeedswitchingseriesthirdgeneration 60 45 VGE=20V VGE=20V 17V 17V IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 60 15V 13V 11V 9V 30 7V 5V 15 0 0 2 4 45 13V 11V 9V 30 7V 5V 15 0 6 15V 0 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 5. Typicaloutputcharacteristic (Tj=25°C) 6 8 5.0 VCE(sat),COLLECTOR-EMITTERSATURATION[V] Tj=25°C Tj=175°C IC,COLLECTORCURRENT[A] 4 Figure 6. Typicaloutputcharacteristic (Tj=175°C) 60 45 30 15 0 2 VCE,COLLECTOR-EMITTERVOLTAGE[V] 5 10 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 15 VGE,GATE-EMITTERVOLTAGE[V] IC=7.5A IC=15A IC=30A 0 25 50 75 100 125 150 175 Tj,JUNCTIONTEMPERATURE[°C] Figure 7. Typicaltransfercharacteristic (VCE=20V) Figure 8. Typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature (VGE=15V) 8 Rev.2.1,2014-12-01 IKW15N120H3 Highspeedswitchingseriesthirdgeneration 1000 1000 td(off) tf td(on) tr t,SWITCHINGTIMES[ns] t,SWITCHINGTIMES[ns] td(off) tf td(on) tr 100 10 0 5 10 15 20 25 100 10 30 10 30 IC,COLLECTORCURRENT[A] Figure 9. Typicalswitchingtimesasafunctionof collectorcurrent (ind.load,Tj=175°C,VCE=600V,VGE=15/0V, rG=35Ω,testcircuitinFig.E) 90 110 7 VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V] td(off) tf td(on) tr t,SWITCHINGTIMES[ns] 70 Figure 10. Typicalswitchingtimesasafunctionofgate resistor (ind.load,Tj=175°C,VCE=600V,VGE=15/0V, IC=15A,testcircuitinFig.E) 1000 100 10 50 rG,GATERESISTOR[Ω] 25 50 75 100 125 150 typ. min. max. 6 5 4 3 2 175 Tj,JUNCTIONTEMPERATURE[°C] 0 25 50 75 100 125 150 175 Tj,JUNCTIONTEMPERATURE[°C] Figure 11. Typicalswitchingtimesasafunctionof junctiontemperature (ind.load,VCE=600V,VGE=15/0V,IC=15A, rG=35Ω,testcircuitinFig.E) Figure 12. Gate-emitterthresholdvoltageasafunction ofjunctiontemperature (IC=0.5mA) 9 Rev.2.1,2014-12-01 IKW15N120H3 Highspeedswitchingseriesthirdgeneration 7 5 Eoff Eon Ets E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] 6 Eoff Eon Ets 5 4 3 2 4 3 2 1 1 0 0 5 10 15 20 25 0 30 10 30 IC,COLLECTORCURRENT[A] Figure 13. Typicalswitchingenergylossesasa functionofcollectorcurrent (ind.load,Tj=175°C,VCE=600V,VGE=15/0V, rG=35Ω,testcircuitinFig.E) 70 90 110 Figure 14. Typicalswitchingenergylossesasa functionofgateresistor (ind.load,Tj=175°C,VCE=600V,VGE=15/0V, IC=15A,testcircuitinFig.E) 2.5 3.5 Eoff Eon Ets 3.0 E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] 50 rG,GATERESISTOR[Ω] 2.0 1.5 1.0 0.5 Eoff Eon Ets 2.5 2.0 1.5 1.0 0.5 0.0 25 50 75 100 125 150 0.0 400 175 Tj,JUNCTIONTEMPERATURE[°C] 500 600 700 800 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 15. Typicalswitchingenergylossesasa functionofjunctiontemperature (indload,VCE=600V,VGE=15/0V,IC=15A, rG=35Ω,testcircuitinFig.E) Figure 16. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (ind.load,Tj=175°C,VGE=15/0V,IC=15A, rG=35Ω,testcircuitinFig.E) 10 Rev.2.1,2014-12-01 IKW15N120H3 Highspeedswitchingseriesthirdgeneration 16 240V 960V 14 12 C,CAPACITANCE[pF] VGE,GATE-EMITTERVOLTAGE[V] 1000 10 8 6 Cies Coes Cres 100 4 2 0 0 10 20 30 40 50 60 70 10 80 0 QGE,GATECHARGE[nC] Figure 17. Typicalgatecharge (IC=15A) 30 50 80 tSC,SHORTCIRCUITWITHSTANDTIME[µs] IC(SC),SHORTCIRCUITCOLLECTORCURRENT[A] 20 Figure 18. Typicalcapacitanceasafunctionof collector-emittervoltage (VGE=0V,f=1MHz) 90 70 60 50 40 30 20 10 10 VCE,COLLECTOR-EMITTERVOLTAGE[V] 10 12 14 16 40 30 20 10 0 18 VGE,GATE-EMITTERVOLTAGE[V] 10 12 14 16 18 20 VGE,GATE-EMITTERVOLTAGE[V] Figure 19. Typicalshortcircuitcollectorcurrentasa functionofgate-emittervoltage (VCE≤600V,startatTj=25°C) Figure 20. Shortcircuitwithstandtimeasafunctionof gate-emittervoltage (VCE≤600V,startatTj≤150°C) 11 Rev.2.1,2014-12-01 IKW15N120H3 Highspeedswitchingseriesthirdgeneration ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W] ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W] 1 D=0.5 0.2 0.1 0.1 0.05 0.02 0.01 single pulse 0.01 1 D=0.5 0.2 0.1 0.05 0.1 0.02 0.01 single pulse 0.01 i: 1 2 3 4 5 ri[K/W]: 3.9E-3 0.15885 0.23655 0.2763 0.015225 τi[s]: 1.6E-5 3.0E-4 2.9E-3 0.01490178 0.1582781 0.001 1E-6 1E-5 1E-4 0.001 0.01 0.1 i: 1 2 3 4 5 ri[K/W]: 0.67965 0.8319 0.51885 0.08454 9.7E-3 τi[s]: 2.5E-4 1.5E-3 8.7E-3 0.03938437 0.2738978 0.001 1E-6 1 1E-5 tp,PULSEWIDTH[s] Figure 21. IGBTtransientthermalimpedance (D=tp/T) 0.01 0.1 1 2.5 Tj=25°C, IF = 15A Tj=175°C, IF = 15A Tj=25°C, IF = 15A Tj=175°C, IF = 15A Qrr,REVERSERECOVERYCHARGE[µC] 700 trr,REVERSERECOVERYTIME[ns] 0.001 Figure 22. Diodetransientthermalimpedanceasa functionofpulsewidth (D=tp/T) 800 600 500 400 300 200 100 1E-4 tp,PULSEWIDTH[s] 300 500 700 900 1100 diF/dt,DIODECURRENTSLOPE[A/µs] 2.0 1.5 1.0 0.5 0.0 100 300 500 700 900 1100 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 23. Typicalreverserecoverytimeasafunction ofdiodecurrentslope (VR=600V) 12 Figure 24. Typicalreverserecoverychargeasa functionofdiodecurrentslope (VR=600V) Rev.2.1,2014-12-01 IKW15N120H3 Highspeedswitchingseriesthirdgeneration 15 0 Tj=25°C, IF = 15A Tj=175°C, IF = 15A 12 dIrr/dt,diodepeakrateoffallofIrr[A/µs] Irr,REVERSERECOVERYCURRENT[A] Tj=25°C, IF = 15A Tj=175°C, IF = 15A 9 6 3 0 100 300 500 700 900 -50 -100 -150 -200 100 1100 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 25. Typicalreverserecoverycurrentasa functionofdiodecurrentslope (VR=600V) 700 900 1100 4.0 Tj=25°C Tj=175°C IF=3.75A IF=7.5A IF=15A 3.5 VF,FORWARDVOLTAGE[V] 40 IF,FORWARDCURRENT[A] 500 Figure 26. Typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope (VR=600V) 50 30 20 10 0 300 diF/dt,DIODECURRENTSLOPE[A/µs] 3.0 2.5 2.0 1.5 0 1 2 3 1.0 4 VF,FORWARDVOLTAGE[V] 0 25 50 75 100 125 150 175 Tj,JUNCTIONTEMPERATURE[°C] Figure 27. Typicaldiodeforwardcurrentasafunction offorwardvoltage 13 Figure 28. Typicaldiodeforwardvoltageasafunction ofjunctiontemperature Rev.2.1,2014-12-01 IKW15N120H3 Highspeedswitchingseriesthirdgeneration PG-TO247-3 14 Rev.2.1,2014-12-01 IKW15N120H3 Highspeedswitchingseriesthirdgeneration vGE(t) I,V 90% VGE dIF/dt a a 10% VGE b b t IC(t) dI 90% IC 90% IC 10% IC 10% IC Figure C. Definition of diode switching characteristics t vCE(t) t td(off) tf td(on) t tr Figure A. vGE(t) 90% VGE Figure D. 10% VGE t IC(t) CC 2% IC t vCE(t) t2 E off = t4 VCE x IC x dt E t1 t1 Figure E. Dynamic test circuit Parasitic inductance Ls, parasitic capacitor Ls, relief capacitor Cr, (only for ZVT switching) on = VCE x IC x d t 2% VCE t3 t2 t3 t4 t Figure B. 15 Rev.2.1,2014-12-01 IKW15N120H3 High speed switching series third generation Revision History IKW15N120H3 Revision: 2014-12-01, Rev. 2.1 Previous Revision Revision Date Subjects (major changes since last revision) 1.1 2009-11-27 - 1.2 2010-02-10 - 2.1 2014-12-01 Final data sheet We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Published by Infineon Technologies AG 81726 Munich, Germany 81726 München, Germany © 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 16 Rev. 2.1, 2014-12-01