IKW25N120CS7XKSA1

IKW25N120CS7 Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology copacked with soft and fast recovery Emitter Controlled 7 diode Features • • • • • • • • VCE=1200 V IC=25 A IGBT co-packed with full current, soft and low Qrr diode Low saturation voltage VCE(sat) = 2.0 V at Tvj=175 °C Optimized for hard switching topologies (2-L inverter, 3-L NPC T-type, ...) Short circuit ruggedness 8 µsec Wide range of dv/dt controllability Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/ G Potential applications • Industrial Drives • Industrial Power Supplies • Solar Inverters C E Product validation • Product Validation: Qualified for industrial applications according to the relevant tests of JEDEC47/20/22 Description C G E Type Package Marking IKW25N120CS7 PG-TO247-3 K25MCS7 Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document 1.00 2021-03-17 IKW25N120CS7 Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology Table of contents Table of contents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 IGBT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 3 Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 4 Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 6 Testing conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Datasheet 2 1.00 2021-03-17 IKW25N120CS7 Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology 1 Package 1 Package Table 1 Characteristic values Parameter Symbol Note or test condition Values Min. Internal emitter inductance measured 5mm. (0.197in) from case LE Storage temperature Tstg Thermal resistance, junction-ambient 2 13.0 -55 °C 260 °C M 0.6 Nm Rth(j-a) 40 K/W wave soldering 1.6mm (0.063in.) from case for 10s Maximum rated values Parameter Symbol Note or test condition Collector-emitter voltage VCE DC collector current, limited by Tvjmax IC Pulsed collector current, tp limited by Tvjmax ICpuls Turn-off safe operating area Values Unit 1200 V TC = 25 °C 55 A TC = 100 °C 37 Tvj ≥ 25 °C 75 A 75 A ±20 V ±25 V 8 µs TC = 25 °C 250 W TC = 100 °C 125 VCE ≤ 1200 V, Tvj ≤ 175 °C Gate-emitter voltage VGE Transient gate-emitter voltage VGE tp ≤ 0.5 µs, D < 0.001 Short circuit withstand time tSC VCC ≤ 600 V, VGE = 15 V, Allowed number of short circuits < 1000, Time between short circuits ≥ 1.0 s, Tvj = 150 °C Power dissipation Ptot Characteristic values Parameter Symbol Note or test condition Values Min. Collector-emitter saturation voltage Datasheet nH IGBT Table 2 Table 3 Max. 150 Soldering temperature Mounting torque , M3 screw Maximum of mounting process: 3 Typ. Unit VCE sat IC = 25.0 A, VGE = 15 V 3 Unit Typ. Max. Tvj = 25 °C 1.65 2.00 Tvj = 175 °C 2.00 V 1.00 2021-03-17 IKW25N120CS7 Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology 2 IGBT Table 3 Characteristic values (continued) Parameter Symbol Note or test condition Values Unit Min. Typ. Max. 5.15 5.70 6.45 V 40 µA 100 nA Gate-emitter threshold voltage VGEth IC = 0.49 mA, VCE = VGE, Tvj = 25 °C Zero gate voltage collector current ICES VCE = 1200 V, VGE = 0 V Gate-emitter leakage current IGES VCE = 0 V, VGE = 20 V Transconductance gfs IC = 25.0 A, VCE = 20 V, Tvj = 175 °C 11.0 S Short circuit collector current ISC VCC ≤ 600 V, VGE = 15 V, tSC ≤ 8 µs, Allowed number of short circuits < 1000 , Time between short circuits ≥ 1.0 s, Tvj = 25 °C 160 A Input capacitance Cies VCE = 25 V, VGE = 0 V, f = 100 kHz 3.5 nF Output capacitance Coes VCE = 25 V, VGE = 0 V, f = 100 kHz 80 pF Reverse transfer capacitance Cres VCE = 25 V, VGE = 0 V, f = 100 kHz 17 pF Gate charge QG IC = 25.0 A, VGE = 15 V, VCE = 960 V 150 nC Turn-on delay time tdon VCE = 600 V, VGE = 15 V, Tvj = 25 °C, RGon = 6.0 Ω, RGoff = 6.0 Ω IC = 25.0 A 21 ns Tvj = 25 °C Tvj = 175 °C Tvj = 175 °C, IC = 25.0 A Rise time (inductive load) tr VCE = 600 V, VGE = 15 V, Tvj = 25 °C, RGon = 6.0 Ω, RGoff = 6.0 Ω IC = 25.0 A Tvj = 175 °C, IC = 25.0 A Turn-off delay time tdoff VCE = 600 V, VGE = 15 V, Tvj = 25 °C, RGon = 6.0 Ω, RGoff = 6.0 Ω IC = 25.0 A Tvj = 175 °C, IC = 25.0 A Fall time (inductive load) tf VCE = 600 V, VGE = 15 V, Tvj = 25 °C, RGon = 6.0 Ω, RGoff = 6.0 Ω IC = 25.0 A Tvj = 175 °C, IC = 25.0 A Turn-on energy Eon VCE = 600 V, VGE = 15 V, Tvj = 25 °C, RGon = 6.0 Ω, RGoff = 6.0 Ω IC = 25.0 A Tvj = 175 °C, IC = 25.0 A Turn-off energy Eoff VCE = 600 V, VGE = 15 V, Tvj = 25 °C, RGon = 6.0 Ω, RGoff = 6.0 Ω IC = 25.0 A Tvj = 175 °C, IC = 25.0 A Datasheet 4 2000 21 13 ns 17 160 ns 240 100 ns 250 1.20 mJ 1.85 1.10 mJ 2.35 1.00 2021-03-17 IKW25N120CS7 Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology 3 Diode Table 3 Characteristic values (continued) Parameter Symbol Note or test condition Values Min. Total switching energy Ets VCE = 600 V, VGE = 15 V, Tvj = 25 °C, RGon = 6.0 Ω, RGoff = 6.0 Ω IC = 25.0 A Operating junction temperature 3 0.45 -40 K/W 175 °C Maximum rated values Parameter Symbol Note or test condition Repetitive peak reverse voltage VRRM Diode forward current, limited by Tvjmax IF Diode pulsed current, limited by Tvjmax IFpuls Power dissipation Ptot Values Unit 1200 V TC = 25 °C 41 A TC = 100 °C 27 Tvj ≥ 25 °C 75 A TC = 25 °C 120 W TC = 100 °C 60 Characteristic values Parameter Symbol Note or test condition Values Min. Diode forward voltage Reverse leakage current Diode reverse recovery time Diode reverse recovery charge Datasheet 0.60 Diode Table 4 Table 5 mJ 4.20 Rthjc Tvj Max. 2.30 Tvj = 175 °C, IC = 25.0 A IGBT thermal resistance, junction-case Typ. Unit VF IR trr Qrr IF = 25.0 A VR = 1200 V Typ. Max. Tvj = 25 °C 1.65 2.15 V Tvj = 175 °C 1.60 40 µA Tvj = 25 °C VR = 600 V, RGon = 6.0 Ω VR = 600 V, RGon = 6.0 Ω 5 Unit Tvj = 175 °C 2000 Tvj = 25 °C, IF = 25.0 A 150 Tvj = 175 °C, IF = 25.0 A 270 Tvj = 25 °C, IF = 25.0 A 1.45 Tvj = 175 °C, IF = 25.0 A 3.60 ns µC 1.00 2021-03-17 IKW25N120CS7 Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology 3 Diode Table 5 Characteristic values (continued) Parameter Symbol Note or test condition Values Min. Diode peak reverse recovery current Diode peak rate off fall of reverse recovery current Reverse recovery energy Diode thermal resistance, junction-case Operating junction temperature Note: Datasheet Irrm dIrr/dt Erec VR = 600 V, RGon = 6.0 Ω VR = 600 V, RGon = 6.0 Ω VR = 600 V, RGon = 6.0 Ω Typ. Tvj = 25 °C, IF = 25.0 A 23.9 Tvj = 175 °C, IF = 25.0 A 33.5 Tvj = 25 °C, IF = 25.0 A -220 Tvj = 175 °C, IF = 25.0 A -150 Tvj = 25 °C, IF = 25.0 A 0.45 Tvj = 175 °C, IF = 25.0 A 1.35 Rthjc 0.90 Tvj -40 Unit Max. A A/µs mJ 1.25 K/W 175 °C For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of the maximum ratings stated in this datasheet. Dynamic test circuit, parasitic inductance Lσ = 30 nH, Cσ = 13 pF 6 1.00 2021-03-17 IKW25N120CS7 Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology 4 Characteristics diagrams 4 Characteristics diagrams Reverse bias safe operating area, IGBT IC = f(VCE) Tvj≤175 °C, VGE = 15 V Typical output characteristic, IGBT IC = f(VCE) Tvj = 25 °C 75.0 100 67.5 60.0 52.5 10 45.0 37.5 30.0 1 22.5 15.0 7.5 0.1 0.0 1 10 100 1000 0.0 Typical output characteristic, IGBT IC = f(VCE) Tvj = 175 °C 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Typical transfer characteristic, IGBT IC = f(VGE) VCE = 20 V 75.0 70 67.5 60 60.0 50 52.5 45.0 40 37.5 30 30.0 22.5 20 15.0 10 7.5 0.0 0 0.0 Datasheet 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 4 7 5 6 7 8 9 10 11 12 1.00 2021-03-17 IKW25N120CS7 Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology 4 Characteristics diagrams Typical collector-emitter saturation voltage as a function of junction temperature, IGBT VCEsat = f(Tvj) VGE = 15 V Gate-emitter threshold voltage as a function of junction temperature, IGBT VGEth = f(Tvj) IC = 0.49 mA 4.0 8 3.5 7 3.0 2.5 6 2.0 5 1.5 1.0 4 0.5 0.0 3 -50 -25 0 25 50 75 100 125 150 175 25 Typical switching times as a function of collector current, IGBT t = f(IC) VCE = 600 V, Tvj = 175 °C, VGE = 0/15 V, RG = 6.0 Ω 75 100 125 150 Typical switching times as a function of gate resistor, IGBT t = f(RG) IC = 25.0 A, VCE = 600 V, Tvj = 175 °C, VGE = 0/15 V 1000 1000 100 100 10 10 1 1 0 Datasheet 50 5 10 15 20 25 30 35 40 45 50 0 8 5 10 15 20 25 30 35 40 45 50 1.00 2021-03-17 IKW25N120CS7 Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology 4 Characteristics diagrams Typical switching times as a function of junction temperature, IGBT t = f(Tvj) IC = 25.0 A, VCE = 600 V, VGE = 0/15 V, RG = 6.0 Ω Typical switching energy losses as a function of collector current, IGBT E = f(IC) VCE = 600 V, Tvj = 175 °C, VGE = 0/15 V, RG = 6.0 Ω 1000 10 9 8 7 100 6 5 4 10 3 2 1 1 25 50 75 100 125 150 0 175 0 Typical switching energy losses as a function of gate resistor, IGBT E = f(RG) IC = 25.0 A, VCE = 600 V, Tvj = 175 °C, VGE = 0/15 V 8 5 10 15 20 25 30 35 40 45 50 Typical switching energy losses as a function of junction temperature, IGBT E = f(Tvj) IC = 25.0 A, VCE = 600 V, VGE = 0/15 V, RG = 6.0 Ω 5 7 4 6 5 3 4 2 3 2 1 1 0 0 0 Datasheet 5 10 15 20 25 30 35 40 45 25 50 9 50 75 100 125 150 175 1.00 2021-03-17 IKW25N120CS7 Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology 4 Characteristics diagrams Typical switching energy losses as a function of collector emitter voltage, IGBT E = f(VCE) Tvj = 175 °C, IC = 25.0 A, VGE = 0/15 V, RG = 6.0 Ω Typical gate charge, IGBT VGE = f(QGE) IC = 25.0 A 7 16 6 14 12 5 10 4 8 3 6 2 4 1 2 0 0 400 450 500 550 600 650 700 750 800 0 Typical capacitance as a function of collector-emitter voltage, IGBT C = f(VCE) f = 100 kHz, VGE = 0 V 10000 15 30 45 60 75 90 105 120 135 150 Typical short circuit collector current as a function of gate-emitter voltage, IGBT IC(SC) = f(VGE) Tvj = 150 °C, VCC = 600 V 150 125 1000 100 100 75 50 10 25 1 0 Datasheet 5 10 15 20 25 0 12.0 30 10 12.5 13.0 13.5 14.0 14.5 15.0 1.00 2021-03-17 IKW25N120CS7 Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology 4 Characteristics diagrams Short circuit withstand time as a function of gateemitter voltage, IGBT tSC = f(VGE) Tvj≤150 °C, VCC = 600 V IGBT transient thermal impedance, IGBT Zth = f(tp) D = tp/T 14 1 12 0.1 10 8 0.01 6 4 0.001 2 0 12.0 12.5 13.0 13.5 14.0 14.5 0.0001 1E-7 15.0 Diode transient thermal impedance as a function of pulse width, Diode Zth = f(tp) D = tp/T 10 1E-6 1E-5 0.0001 0.001 0.01 0.1 1 Typical diode forward current as a function of forward voltage, Diode IF = f(VF) 75.0 67.5 1 60.0 52.5 0.1 45.0 37.5 0.01 30.0 22.5 0.001 15.0 7.5 0.0001 1E-6 Datasheet 1E-5 0.0001 0.001 0.01 0.1 0.0 1 0.0 11 0.5 1.0 1.5 2.0 2.5 3.0 1.00 2021-03-17 IKW25N120CS7 Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology 4 Characteristics diagrams Typical diode forward voltage as a function of junction temperature, Diode VF = f(Tvj) Typical diode current slope as a function of gate resistor, Diode diF/dt = f(RG) IC = 25.0 A, VCE = 600 V, VGE = 0/15 V 3.00 1600 2.75 1400 2.50 1200 2.25 1000 2.00 1.75 800 1.50 600 1.25 400 1.00 200 0.75 0.50 -50 -25 0 25 50 75 100 125 150 0 175 0 Typical reverse recovery time as a function of diode current slope, Diode trr = f(diF/dt) VR = 600 V, IF = 25.0 A 5.0 450 4.5 400 4.0 350 3.5 300 3.0 250 2.5 200 2.0 150 1.5 100 1.0 50 0.5 400 Datasheet 600 800 1000 1200 1400 0.0 400 1600 12 10 15 20 25 30 35 40 45 50 Typical reverse recovery charge as a function of diode current slope, Diode Qrr = f(diF/dt) VR = 600 V, IF = 25.0 A 500 0 5 600 800 1000 1200 1400 1600 1.00 2021-03-17 IKW25N120CS7 Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology 4 Characteristics diagrams Typical reverse recovery current as a function of diode current slope, Diode Irr = f(diF/dt) VR = 600 V, IF = 25.0 A 40 Typical diode peak rate of fall of reverse recovery current as a function of diode current slope, Diode dIrr/dt = f(diF/dt) VR = 600 V, IF = 25.0 A 0 35 -50 30 25 -100 20 -150 15 10 -200 5 0 400 600 800 1000 1200 1400 -250 400 1600 600 800 1000 1200 1400 1600 Typical reverse energy losses as a function of diode current slope, Diode Erec = f(diF/dt) VR = 600 V, IF = 25.0 A 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 400 Datasheet 600 800 1000 1200 1400 1600 13 1.00 2021-03-17 IKW25N120CS7 Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology 5 Package outlines 5 Package outlines Package Drawing PG-TO247-3 DIMENSIONS A A1 A2 b b1 b2 c D D1 D2 E E1 E2 E3 e L L1 P Q S MILLIMETERS MIN. MAX. 4.70 5.30 2.20 2.60 1.50 2.50 1.00 1.40 1.60 2.41 2.57 3.43 0.89 0.38 21.50 20.70 17.65 13.08 1.35 0.51 16.30 15.50 14.15 12.38 5.10 3.40 2.60 1.00 5.44 20.40 19.80 4.50 3.85 3.70 3.50 6.25 5.35 6.30 6.04 DOCUMENT NO. Z8B00003327 REVISION 06 SCALE 3:1 0 1 2 3 4 5mm EUROPEAN PROJECTION ISSUE DATE 25.07.2018 Figure 6 Datasheet 14 1.00 2021-03-17 IKW25N120CS7 Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology 6 Testing conditions 6 Testing conditions VGE(t) I,V 90% VGE t rr = t a + t b Q rr = Q a + Q b dIF/dt a 10% VGE b t Qa IC(t) Qb dI 90% IC 90% IC 10% IC 10% IC Figure C. Definition of diode switching characteristics t VCE(t) t td(off) tf td(on) t tr Figure A. VGE(t) 90% VGE Figure D. 10% VGE t IC(t) CC 2% IC t Figure E. Dynamic test circuit Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor Cr, (only for ZVT switching) VCE(t) t2 E off = t4 VCE x IC x dt E t1 t1 t2 t3 on = VCE x IC x d t 2% VCE t3 t4 t Figure B. Figure 7 Datasheet 15 1.00 2021-03-17 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2021-03-17 Published by Infineon Technologies AG 81726 Munich, Germany © 2021 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX- IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.